BYT62_10 [VISHAY]
Standard Avalanche Sinterglass Diode; 标准的雪崩二极管Sinterglass
| 型号： | BYT62_10 |
| 厂家： | 
VISHAY |
| 描述： | Standard Avalanche Sinterglass Diode |
| 文件： | 总3页 (文件大小：108K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BYT62
Vishay Semiconductors
Standard Avalanche Sinterglass Diode
FEATURES
• Glass passivated junction
• Hermetically sealed package
• Controlled avalanche characteristics
• Low reverse current
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
949539
• Halogen-free according to IEC 61249-2-21
definition
MECHANICAL DATA
APPLICATIONS
Case: SOD-57
• High voltage rectification diode
Terminals: plated axial leads, solderable per MIL-STD-750,
method 2026
Polarity: color band denotes cathode end
Mounting position: any
Weight: approx. 369 mg
PARTS TABLE
PART
TYPE DIFFERENTIATION
R = 2400 V; IFAV = 350 mA
PACKAGE
BYT62
V
SOD-57
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
Reverse voltage = repetitive peak reverse
voltage
See electrical characteristics
VR = VRRM
2400
V
Peak forward surge current
Average forward current
tp = 10 ms, half sine wave
IFSM
IFAV
ER
10
350
A
RthJA ≤ 60 K/W
mA
mJ
°C
Non repetitive reverse avalanche energy
Junction temperature
I
(BR)R = 1 A, inductive load
60
Tj
175
Storage temperature range
Tstg
- 55 to + 190
°C
MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
K/W
Junction ambient
Lead length l = 10 mm, TL = constant
RthJA
60
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX
3
UNIT
IF = 200 mA
VF
VF
-
-
-
-
-
-
-
-
-
-
V
V
IF = 1 A
-
3.6
2.9
4
Forward voltage
IF = 1 A, Tj = 175 °C
IF = 1 A, Tj = - 40 °C
VF
-
V
VF
-
V
VR = VRRM
IR
-
5
μA
μA
nA
V
Reverse current
VR = VRRM, Tj = 175 °C
VR = VRRM, Tj = - 40 °C
IR = 100 μA
IR
-
250
400
-
IR
-
2500
-
Reverse breakdown voltage
Reverse recovery time
V(BR)R
trr
lF = 0.5 A, lR = 1 A, iR = 0.25 A
5
μs
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For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 86033
Rev. 1.7, 25-Aug-10
BYT62
Vishay Semiconductors
Standard Avalanche Sinterglass
Diode
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
600
500
400
300
200
10
1
Tj = 175 °C
RthJA = 30 K/W
Tj = 25 °C
0.1
RthJA = 60 K/W
0.01
Tj = - 40 °C
100
0
VR = VRRM
0.001
200
0
40
80
120
160
0
1
2
3
4
5
6
7
95 9727
VF - Forward Voltage (V)
Tj - Junction Temperature (°C)
95 9725
Fig. 1 - Max. Reverse Power Dissipation vs. Junction Temperature
Fig. 3 - Max. Forward Current vs. Forward Voltage
1000
VR = VRRM
100
10
1
0.1
200
0
40
80
120
160
Tj - Junction Temperature (°C)
95 9726
Fig. 2 - Max. Reverse Current vs. Junction Temperature
PACKAGE DIMENSIONS in millimeters (inches): SOD-57
26 (1.024) min.
26 (1.024) min.
4 (0.157) max.
20543
Document Number: 86033
Rev. 1.7, 25-Aug-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
157
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Vishay
Disclaimer
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Document Number: 91000
Revision: 11-Mar-11
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