BYV26EGP/74 [VISHAY]

Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-204AC, PLASTIC, DO-15, 2 PIN;


型号：	BYV26EGP/74
厂家：	VISHAY
描述：	Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-204AC, PLASTIC, DO-15, 2 PIN
文件：	总4页 (文件大小：346K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

BYV26DGP & BYV26EGP

Vishay General Semiconductor

Glass Passivated Ultrafast Rectifier

Major Ratings and Characteristics

I_F(AV)

V_RRM

I_FSM

t_rr

1.0 A

800 V, 1000 V

30 A

75 ns

V_F

1.3 V

T_jmax.

175 °C

DO-204AC (DO-15)

* Glass Encapsulation

technique is covered by

Patent No. 3,996,602,

brazed-lead assembly

to Patent No. 3,930,306

Features

Mechanical Data

• Cavity-free glass-passivated junction

• Ultrafast reverse recovery time

• Low forward voltage drop

• Low switching losses, high efficiency

• High forward surge capability

Case: DO-204AC, molded epoxy over glass body

Epoxy meets UL-94V-0 Flammability rating

Terminals: Matte tin plated leads, solderable per

J-STD-002B and JESD22-B102D

E3 suffix for commercial grade, HE3 suffix for high

reliability grade (AEC Q101 qualified)

• Meets environmental standard MIL-S-19500

• Solder Dip 260 °C, 40 seconds

Polarity: Color band denotes cathode end

Typical Applications

For use in high frequency rectification and freewheel-

ing application in switching mode converters and

inverters for consumer, computer and Telecommuni-

cation

Maximum Ratings

T_A= 25 °C unless otherwise specified

Parameter

Symbol

V_RRM

BYV26DGP

800

BYV26EGP

1000

Unit

Maximum repetitive peak reverse voltage

Maximum RMS voltage

V_RMS

V_DC

560

800

700

Maximum DC blocking voltage

1000

Maximum average forward rectified current 0.375" (9.5 mm)

lead length (See Fig. 1)

I_F(AV)

1.0

Peak forward surge current 10 ms single half sine-wave

superimposed on rated load

Non repetitive peak reverse energy ⁽¹⁾

I_FSM

E_RSM

°C

Operating junction and storage temperature range

T_J, T_STG

- 65 to + 175

Notes:

(1) Peak reverse energy measured at I_R= 400 mA, T_J= T_Jmax. on inductive load, t = 20 µs

Document Number 88554

10-Aug-05

www.vishay.com

BYV26DGP & BYV26EGP

Vishay General Semiconductor

Electrical Characteristics

T_A= 25 °C unless otherwise specified

Parameter

Test condition

at 100 µA

Symbol

V_BR

BYV26DGP

900

BYV26EGP

1100

Unit

Minimum avalanche

breakdown voltage

Maximum instantaneous

forward voltage

at 1.0 A

T_J= 25 °C

V_F

I_R

2.5

1.3

T_J= 175 °C

Maximum DC reverse current

at rated DC blocking voltage

T_A= 25 °C

5.0

150

µA

T_A= 165 °C

Max. reverse recovery time

at I_F= 0.5 A, I_R= 1.0 A,

I_rr= 0.25 A

t_rr

Typical junction capacitance

at 4.0 V, 1 MHz

C_J

Thermal Characteristics

T_A= 25 °C unless otherwise specified

Parameter

Typical thermal resistance ^(1,2)

Symbol

R_θJA

R_θJL

BYV26DGP

BYV26EGP

Unit

°C/W

Notes:

(1) Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length, mounted on P.C.B. with

0.5 x 0.5" (12 x 12 mm) copper pads

(2) Thermal resistance from junction to lead at 0.375" (9.5 mm) lead length with both leads attached to heatsink

Ratings and Characteristics Curves

(T_A= 25 °C unless otherwise noted)

100

1.2

Resistive or

= Lead

10 ms, Single Half Sine-Wave

Inductive Load

Temperature

Lead Mounted

on Heatsinks

T^J= TJ max.

1.0

0.8

0.6

0.4

Mounted on P.C.B.

0.375” (9.5mm) Lead Length

on 0.5 x 0.5” (12 x 12mm)

Copper Pads

0.2

= Ambient Temperature

25 50 75

Temperature (°C)

100

125

150

175

Number of Cycles at 60 Hz

Figure 1. Maximum Forward Current Derating Curve

Figure 2. Maximum Non-Repetitive Peak Forward Surge Current

www.vishay.com

Document Number 88554

10-Aug-05

BYV26DGP & BYV26EGP

Vishay General Semiconductor

100

TJ = 25 °C

f = 1.0 MHz

Vsig = 50mVp-p

Tj = 175 °C

Tj = 150 °C

Tj = 125 °C

0.1

Tj = 25 °C

0.1

0.01

100

0.2

0.6

1.4

1.8

2.2

2.6

3.4

Reverse Voltage (V)

Instantaneous Forward Voltage (V)

Figure 3. Typical Instantaneous Forward Voltage Characteristics

Figure 5. Typical Junction Capacitance

100

Tj = 175 °C

Tj = 165 °C

Tj = 125 °C

Mounted on P.C.B.

0.1

0.375” (9.5mm) Lead Length

on 0.47 x 0.47” (12 x 12mm)

Copper Pads

Tj = 25 °C

0.01

0.001

0.01

0.1

100

Percent of Peak Reverse Voltage (%)

Figure 4. Typical Reverse Leakage Characteristics

100

t, Pulse Duration (sec.)

Figure 6. Typical Transient Thermal Impedance

Package outline dimensions in inches (millimeters)

DO-204AC (DO-15)

0.034 (0.86)

0.028 (0.71)

Dia.

1.0 (25.4)

min.

0.300 (7.6)

0.230 (5.8)

0.140 (3.6)

0.104 (2.6)

Dia.

1.0 (25.4)

min.

Document Number 88554

10-Aug-05

www.vishay.com

Legal Disclaimer Notice

Vishay

Notice

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,

or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, by

estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's

terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express

or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness

for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.

Customers using or selling these products for use in such applications do so at their own risk and agree to fully

indemnify Vishay for any damages resulting from such improper use or sale.

Document Number: 91000

Revision: 08-Apr-05

www.vishay.com

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