BYV27-150/4 [VISHAY]

Rectifier Diode, Avalanche, 1 Phase, 1 Element, 2A, 150V V(RRM), Silicon, DO-204AP, ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2;


型号：	BYV27-150/4
厂家：	VISHAY
描述：	Rectifier Diode, Avalanche, 1 Phase, 1 Element, 2A, 150V V(RRM), Silicon, DO-204AP, ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2
文件：	总5页 (文件大小：113K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

BYV27/...

Vishay Semiconductors

Ultra Fast Avalanche Sinterglass Diode

Features

• Controlled avalanche characteristic

• Low forward voltage

• Ultra fast recovery time

• Glass passivated junction

• Hermetically sealed package

• Lead (Pb)-free component

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

949539

Terminals: Plated axial leads, solderable per MIL-

STD-750, Method 2026

Polarity: Color band denotes cathode end

Mounting Position: Any

Applications

Very fast rectification diode e.g. for switch mode

power supply

Weight: approx. 369 mg

Mechanical Data

Case: SOD-57 Sintered glass case

Parts Table

Part

Type differentiation

V_R= 50 V; I_FAV= 2 A

_R= 100 V; I_FAV= 2 A

V_R= 150 V; I_FAV= 2 A

_R= 200 V; I_FAV= 2 A

Package

BYV27-50

BYV27-100

BYV27-150

BYV27-200

SOD-57

Absolute Maximum Ratings

T_amb= 25 °C, unless otherwise specified

Parameter

Test condition

Part

Symbol

Value

Unit

Peak reverse voltage, non

repetitive

see electrical characteristics

BYV27-50

V_RSM

BYV27-100

BYV27-150

BYV27-200

BYV27-50

V_RSM

110

165

220

V_RSM

Reverse voltage = Repetitive

peak reverse voltage

see electrical characteristics

t_p= 10 ms, half sinewave

_R= V_RRM

BYV27-100

BYV27-150

BYV27-200

V_R= V_RRM

_R= V_RRM

V_R= V_RRM

I_FSM

100

150

200

Peak forward surge current

Repetitive peak forward current

I_FRM

Document Number 86042

Rev. 1.6, 21-Jun-05

www.vishay.com

BYV27/...

Vishay Semiconductors

Parameter

Test condition

Part

Symbol

I_FAV

Value

Unit

Average forward current

Pulse energy in avalanche

mode, non repetitive (inductive

load switch off)

_(BR)R= 1 A, T_j= 175 °C

E_R

Junction and storage

temperature range

T_j= T_stg

- 55 to + 175

°C

Maximum Thermal Resistance

T_amb= 25 °C, unless otherwise specified

Parameter

Junction ambient

Test condition

Symbol

Value

Unit

l = 10 mm, T_L= constant

R_thJA

K/W

on PC board with spacing

25 mm

100

Electrical Characteristics

T_amb= 25 °C, unless otherwise specified

Parameter

Test condition

Symbol

Min

Typ.

Max

1.07

Unit

Forward voltage

I_F= 3 A

I_F= 3 A, T_j= 175 °C

_R= V_RRM

V_RSM

_R= V_RRM, T _j= 165 °C

_F= 0.5 A, I_R= 1 A, i_R= 0.25 A

V_F

I_R

0.88

Reverse current

µA

I_R

100

150

I_R

Reverse recovery time

t_rr

Typical Characteristics (Tamb = 25 °C unless otherwise specified)

120

100.000

10.000

1.000

100

T = 175 °C

T = constant

= 25°C

0.100

0.010

0.001

0.0

0.5

1.0

V – Forward Voltage ( V )

1.5

2.0

2.5

l – Lead Length ( mm )

94 9526

16382

Figure 1. Typ. Thermal Resistance vs. Lead Length

Figure 2. Forward Current vs. Forward Voltage

www.vishay.com

Document Number 86042

Rev. 1.6, 21-Jun-05

BYV27/...

Vishay Semiconductors

2.5

2.0

1.5

1.0

0.5

0.0

= V

RRM

V = V

R RRM

half sinewave

thJA

= 45 K/W

l = 10 mm

P –Limit

@100 % V

P –Limit

@80 % V

= 100 K/W

thJA

PCB: d = 25 mm

20 40 60 80 100 120 140 160 180

– Ambient Temperature (°C )

100 125 150 175

16383

16385

T – Junction Temperature (°C )

amb

Figure 3. Max. Average Forward Current vs. Ambient Temperature

Figure 5. Max. Reverse Power Dissipation vs. Junction

Temperature

1000

100

= V

RRM

f = 1 MHz

100

100 125 150 175

0.1

1.0

V – Reverse Voltage ( V )

10.0

100.0

16384

T – Junction Temperature (°C )

16386

Figure 4. Reverse Current vs. Junction Temperature

Figure 6. Diode Capacitance vs. Reverse Voltage

Package Dimensions in mm (Inches)

3.6 (0.140)max.

94 9538

Sintered Glass Case

SOD-57

Cathode Identification

ISO Method E

0.82 (0.032) max.

26(1.014) min.

4.0 (0.156) max.

Document Number 86042

Rev. 1.6, 21-Jun-05

www.vishay.com

BYV27/...

Vishay Semiconductors

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and operating

systems with respect to their impact on the health and safety of our employees and the public, as well as

their impact on the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are

known as ozone depleting substances (ODSs).

The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs

and forbid their use within the next ten years. Various national and international initiatives are pressing for an

earlier ban on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use

of ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments

respectively

2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental

Protection Agency (EPA) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting

substances and do not contain such substances.

We reserve the right to make changes to improve technical design

and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each

customer application by the customer. Should the buyer use Vishay Semiconductors products for any

unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all

claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal

damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

www.vishay.com

Document Number 86042

Rev. 1.6, 21-Jun-05

Legal Disclaimer Notice

Vishay

Notice

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,

or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, by

estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's

terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express

or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness

for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.

Customers using or selling these products for use in such applications do so at their own risk and agree to fully

indemnify Vishay for any damages resulting from such improper use or sale.

Document Number: 91000

Revision: 08-Apr-05

www.vishay.com

相关型号：