BYV29-400-HE3/45 [VISHAY]
DIODE 8 A, 400 V, SILICON, RECTIFIER DIODE, TO-220AC, ROHS COMPLIANT, PLASTIC PACKAGE-2, Rectifier Diode;
| 型号： | BYV29-400-HE3/45 |
| 厂家： | 
VISHAY |
| 描述： | DIODE 8 A, 400 V, SILICON, RECTIFIER DIODE, TO-220AC, ROHS COMPLIANT, PLASTIC PACKAGE-2, Rectifier Diode |
| 文件： | 总5页 (文件大小：132K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UG(F,B)8FT & UG(F,B)8GT, BYV29(F,B)-300 & BYV29(F,B)-400
Vishay General Semiconductor
Ultrafast Rectifier
FEATURES
TO-220AC
ITO-220AC
• Glass passivated chip junction
• Ultrafast recovery time
• Low switching losses, high efficiency
• Low forward voltage drop
• High forward surge capability
• Meets MSL level 1, per J-STD-020C, LF max peak
of 245 °C (for TO-263AB package)
2
2
1
BYV29F, UGF8 Series
PIN 1
1
BYV29, UG8 Series
PIN 1
• Solder Dip 260 °C, 40 seconds (for TO-220AC &
ITO-220AC package)
CASE
PIN 2
PIN 2
TO-263AB
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
K
TYPICAL APPLICATIONS
2
For use in high frequency rectifier of switching mode
power supplies, inverters, freewheeling diodes,
dc-to-dc converters, and other power switching
application.
1
BYV29B, UGB8 Series
PIN 1
K
PIN 2
HEATSINK
MECHANICAL DATA
MAJOR RATINGS AND CHARACTERISTICS
Case: TO-220AC, ITO-220AC, TO-263AB
Epoxy meets UL 94V-0 flammability rating
IF(AV)
VRRM
IFSM
trr
8.0 A
300 V, 400 V
110 A
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
35 ns
VF
1.03 V
Polarity: As marked
Tj max.
150 °C
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)
C
BYV29-300
UG8FT
BYV29-400
UG8GT
PARAMETER
SYMBOL
UNIT
Maximum repetitive peak reverse voltage
Maximum working reverse voltage
Maximum RMS voltage
VRRM
VRWM
VRMS
VDC
300
300
210
300
400
400
280
400
V
V
V
V
A
Maximum DC blocking voltage
Maximum average forward rectified current at TC = 100 °C
IF(AV)
8.0
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
TJ, TSTG
VAC
110
A
°C
V
Operating junction and storage temperature range
- 40 to + 150
1500
Isolation voltage (ITO-220AC only)
From terminal to heatsink t = 1 minute
Document Number 88557
27-Jun-06
www.vishay.com
1
UG(F,B)8FT & UG(F,B)8GT, BYV29(F,B)-300 & BYV29(F,B)-400
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted)
C
BYV29-300 BYV29-400
UG8FT UG8GT
PARAMETER
TEST CONDITIONS
SYMBOL
UNIT
IF = 8 A
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
1.25
1.03
1.40
Maximum instantaneous forward voltage (1) IF = 8 A
IF = 20 A
VF
V
TC = 25 °C
10
350
Maximum DC reverse current at VRRM
IR
trr
trr
µA
ns
ns
T
C = 100 °C
Maximum reverse recovery time
Maximum reverse recovery time
at IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A
35
50
at IF = 1.0 A, di/dt = 100 A/µs, VR = 30 V,
I
rr = 0.1 IRM
at IF = 10 A, di/dt = 50 A/µs, VR = 30 V,
Maximum reverse recovery current
Maximum recovered stored charged
IRM
5.5
55
A
TC = 100 °C
at IF = 2 A, di/dt = 20 A/µs, VR = 30 V,
Qrr
nC
I
rr = 0.1 IRM
Note:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS (T = 25 °C unless otherwise noted)
C
BYV29
UG8
BYV29F
UGF8
BYV29B
UGB8
PARAMETER
SYMBOL
UNIT
Typical thermal resistance from junction to case
RθJC
2.5
5.5
2.5
°C/W
ORDERING INFORMATION
PACKAGE
TO-220AC
ITO-220AC
TO-263AB
TO-263AB
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
50/Tube
DELIVERY MODE
Tube
BYV29-400-E3/45
1.80
1.95
1.77
1.77
45
45
45
81
BYV29F-400-E3/45
BYV29B-400-E3/45
BYV29B-400-E3/81
50/Tube
Tube
50/Tube
Tube
800/Reel
Tape Reel
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Document Number 88557
27-Jun-06
UG(F,B)8FT & UG(F,B)8GT, BYV29(F,B)-300 & BYV29(F,B)-400
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(T = 25 °C unless otherwise noted)
A
12
1000
100
Resistive or Inductive Load
Tj
= 125 °C
= 100 °C
10
8
Tj
10
1
6
4
Tj = 25 °C
0.1
0.01
2
0
0
25
50
75
100
125
150
175
20
40
60
80
100
Case Temperature (°C)
Percent of Rated Peak Reverse Voltage (%)
Figure 1. Maximum Forward Current Derating Curve
Figure 4. Typical Reverse Leakage Charateristics
160
140
120
100
80
150
TC = 100 °C
8.3 ms Single Half Sine-Wave
trr
Q
rr
di/dt = 150 A/µs
125
100
75
50
25
0
di/dt = 50 A/µs
di/dt = 20 A/µs
di/dt = 100 A/µs
60
40
di/dt = 100 A/µs
di/dt = 150 A/µs
125
100
20
di/dt = 20 A/µs
0
50
75
1
10
100
25
Number of Cycles at 60 Hz
Junction Temperature (°C)
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
Figure 5. Reverse Switching Characteristics Per Leg
100
100
Tj = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
Tj = 125 °C
10
Tj = 100 °C
1
10
Tj = 25 °C
0.1
1
0.1
0.01
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Figure 3. Typical Instantaneous Forward Charateristics
Figure 6. Typical Junction Capacitance
Document Number 88557
27-Jun-06
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UG(F,B)8FT & UG(F,B)8GT, BYV29(F,B)-300 & BYV29(F,B)-400
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
ITO-220AC
See note
TO-220AC
0.190 (4.83)
0.170 (4.32)
See note
0.404 (10.26)
0.384 (9.75)
0.076 Ref.
(1.93) ref.
0.415(10.54)MAX.
0.154(3.91)
0.185(4.70)
0.110 (2.79)
0.100 (2.54)
DIA.
0.370(9.40)
0.360(9.14)
0.148(3.74)
0.175(4.44)
0.055(1.39)
0.045(1.14)
7° Ref.
0.076 Ref.
0.113(2.87)
0.103(2.62)
(1.93) Ref.
0.140 (3.56) DIA.
0.125 (3.17) DIA.
0.135 (3.43) DIA.
0.122 (3.08) DIA.
45° Ref.
0.145(3.68)
0.135(3.43)
0.600 (15.24)
0.580 (14.73)
0.671 (17.04)
0.651 (16.54)
7° Ref.
0.603(15.32)
0.573(14.55)
PIN
0.350 (8.89)
0.330 (8.38)
0.350(8.89)
0.330(8.38)
0.635(16.13)
0.625(15.87)
2
1
Copper exposure
0.010 (0.25) Max.
PIN
7° Ref.
1
2
1.148(29.16)
1.118(28.40)
0.191 (4.85)
0.171 (4.35)
0.160(4.06)
0.140(3.56)
0.110(2.79)
0.100(2.54)
0.110 (2.79)
0.100 (2.54)
0.560 (14.22)
0.530 (13.46)
0.057 (1.45)
0.045 (1.14)
0.057(1.45)
0.560(14.22)
0.530(13.46)
PIN 1
PIN 2
0.045(1.14)
CASE
0.105(2.67)
0.095(2.41)
0.035 (0.89)
0.025 (0.64)
0.037(0.94)
0.027(0.68)
0.025 (0.64)
0.015 (0.38)
0.028 (0.71)
0.020 (0.51)
0.022(0.56)
0.014(0.36)
0.205 (5.21)
0.195 (4.95)
0.205(5.20)
0.195(4.95)
Note: Copper exposure is allowable for 0.005 (0.13) Max. from the body
TO-263AB
0.41 (10.45)
0.380 (9.65)
0.190 (4.83)
0.160 (4.06)
Mounting Pad Layout
0.055 (1.40)
0.045 (1.14)
0.42
MIN.
0.245 (6.22)
MIN
(10.66)
K
0.33
(8.38)
0.055 (1.40)
0.047 (1.19)
MIN.
0.360 (9.14)
0.320 (8.13)
0.624 (15.85)
1
K
0.591(15.00)
2
0.670 (17.02)
0.591 (15.00)
0-0.01 (0-0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.15
(3.81)
0.037 (0.940)
0.027 (0.686)
MIN.
0.08
MIN.
0.140 (3.56)
0.110 (2.79)
0.105 (2.67)
0.095 (2.41)
(2.032)
0.205 (5.20)
0.195 (4.95)
0.105 (2.67)
(0.095) (2.41)
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Document Number 88557
27-Jun-06
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
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相关型号：
BYV29-400HE3/45
DIODE 8 A, 400 V, SILICON, RECTIFIER DIODE, TO-220AC, ROHS COMPLIANT, PLASTIC PACKAGE-2, Rectifier Diode
VISHAY
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