BYV29F-200-E3/45 [VISHAY]

Rectifier Diode,;
BYV29F-200-E3/45
型号: BYV29F-200-E3/45
厂家: VISHAY    VISHAY
描述:

Rectifier Diode,

二极管
文件: 总5页 (文件大小:136K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BYV29-xxx, BYV29F-xxx, BYV29B-xxx, UG8xT, UGF8xT, UGB8xT  
www.vishay.com  
Vishay General Semiconductor  
Ultrafast Rectifier  
FEATURES  
TO-220AC  
ITO-220AC  
• Power pack  
• Glass passivated pellet chip junction  
• Ultrafast recovery time  
• Low switching losses, high efficiency  
• Low forward voltage drop  
2
2
• High forward surge capability  
1
1
BYV29, UG8 Series  
PIN 1  
• Meets MSL level 1, per J-STD-020, LF maximum peak  
of 245 °C (D2PAK (TO-263AB package))  
BYV29F, UGF8 Series  
PIN 1  
CASE  
PIN 2  
• Solder dip 275 °C max. 10 s, per JESD 22-B106  
(for TO-220AC and ITO-220AC package)  
PIN 2  
D2PAK (TO-263AB)  
• AEC-Q101 qualified available  
K
- Automotive ordering code: base P/NHE3  
(for ITO-220AC and D2PAK (TO-263AB package))  
2
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
1
BYV29B, UGB8 Series  
PIN 1  
K
TYPICAL APPLICATIONS  
PIN 2  
HEATSINK  
For use in high frequency rectifier of switching mode  
power supplies, inverters, freewheeling diodes, DC/DC  
converters, and other power switching application.  
DESIGN SUPPORT TOOLS AVAILABLE  
3
D
3
D
3D Models  
MECHANICAL DATA  
Case: TO-220AC, ITO-220AC, D2PAK (TO-263AB)  
Molding compound meets UL 94 V-0 flammability rating  
PRIMARY CHARACTERISTICS  
Base P/N-E3  
-
RoHS-compliant, commerical grade  
IF(AV)  
8.0 A  
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified  
VRRM  
300 V to 400 V  
(“_X” denotes revision code e.g. A, B,....)  
IFSM  
110 A  
Terminals: matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix  
trr  
VF  
35 ns  
1.03 V  
meets JESD 201 class 2 whisker test  
TJ max.  
150 °C  
TO-220AC, ITO-220AC, D2PAK (TO-263AB)  
Single  
Polarity: as marked  
Package  
Mounting Torque: 10 in-lbs max.  
Circuit configurations  
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)  
BYV29-300  
UG8FT  
300  
BYV29-400  
UG8GT  
400  
PARAMETER  
SYMBOL  
UNIT  
Maximum repetitive peak reverse voltage  
Maximum working reverse voltage  
Maximum RMS voltage  
VRRM  
VRWM  
VRMS  
VDC  
V
V
V
V
A
300  
210  
300  
400  
280  
400  
Maximum DC blocking voltage  
Maximum average forward rectified current at TC = 100 °C  
IF(AV)  
8.0  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
110  
A
Operating junction and storage temperature range  
TJ, TSTG  
VAC  
-40 to +150  
1500  
°C  
V
Isolation voltage (ITO-220AC only) from terminal to heatsink t = 1 min  
Revision: 12-Jun-2019  
Document Number: 88557  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
BYV29-xxx, BYV29F-xxx, BYV29B-xxx, UG8xT, UGF8xT, UGB8xT  
www.vishay.com  
Vishay General Semiconductor  
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)  
BYV29-300,  
UG8FT  
BYV29-400,  
UG8GT  
PARAMETER  
TEST CONDITIONS  
SYMBOL  
UNIT  
TJ = 25 °C  
1.25  
1.03  
1.40  
10  
IF = 8 A  
IF = 20 A  
(1)  
Maximum instantaneous forward voltage  
TJ = 150 °C  
TJ = 25 °C  
TC = 25 °C  
TC = 100 °C  
VF  
V
Maximum DC reverse current at VRRM  
IR  
μA  
350  
Maximum reverse recovery time  
Maximum reverse recovery time  
IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A  
trr  
trr  
35  
50  
ns  
ns  
IF = 1.0 A, dI/dt = 100 A/μs,  
VR = 30 V, Irr = 0.1 IRM  
IF = 10 A, dI/dt = 50 A/μs,  
R = 30 V, TC = 100 °C  
Maximum reverse recovery current  
Maximum recovered stored charged  
IRM  
Qrr  
5.5  
55  
A
V
IF = 2 A, dI/dt = 20 A/μs,  
R = 30 V, Irr = 0.1 IRM  
nC  
V
Note  
(1)  
Pulse test: 300 μs pulse width, 1 % duty cycle  
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)  
BYV29  
UG8  
BYV29F  
UGF8  
BYV29B  
UGB8  
PARAMETER  
SYMBOL  
UNIT  
Typical thermal resistance from junction to case  
RJC  
2.5  
5.5  
2.5  
°C/W  
ORDERING INFORMATION (Example)  
PACKAGE  
PREFERRED P/N  
UNIT WEIGHT (g)  
PACKAGE CODE BASE QUANTITY DELIVERY MODE  
TO-220AC  
BYV29-400-E3/45  
1.80  
1.95  
1.77  
1.77  
1.95  
45  
45  
45  
81  
P
50/tube  
50/tube  
50/tube  
800/reel  
50/tube  
Tube  
Tube  
ITO-220AC  
BYV29F-400-E3/45  
BYV29B-400-E3/45  
BYV29B-400-E3/81  
BYV29F-400HE3_A/P (1)  
D2PAK (TO-263AB)  
D2PAK (TO-263AB)  
ITO-220AC  
Tube  
Tape and reel  
Tube  
D2PAK (TO-263AB)  
D2PAK (TO-263AB)  
BYV29B-400HE3_A/P (1)  
BYV29B-400HE3_A/I (1)  
1.77  
1.77  
P
I
50/tube  
800/reel  
Tube  
Tape and reel  
Note  
(1)  
AEC-Q101 qualified, available in ITO-220AC and TO-263AB package  
Revision: 12-Jun-2019  
Document Number: 88557  
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
BYV29-xxx, BYV29F-xxx, BYV29B-xxx, UG8xT, UGF8xT, UGB8xT  
www.vishay.com  
Vishay General Semiconductor  
RATINGS AND CHARACTERISTICS CURVES (TC = 25 °C unless otherwise noted)  
12  
10  
8
1000  
100  
10  
TJ = 125 °C  
TJ = 100 °C  
Resistive or Inductive Load  
6
TJ = 25 °C  
1
4
0.1  
0.01  
2
0
0
25  
50  
75  
100  
125  
150  
175  
20  
40  
60  
80  
100  
Case Temperature (°C)  
Percent of Rated Peak Reverse Voltage (%)  
Fig. 1 - Maximum Forward Current Derating Curve  
Fig. 4 - Typical Reverse Leakage Charateristics  
150  
160  
140  
120  
100  
80  
TC = 100 °C  
8.3 ms Single Half Sine-Wave  
trr  
Qrr  
125  
100  
75  
50  
25  
0
dI/dt = 150 A/μs  
dI/dt = 50 A/μs  
dI/dt = 100 A/μs  
dI/dt = 20 A/μs  
60  
40  
dI/dt = 100 A/μs  
20  
dI/dt = 150 A/μs  
dI/dt = 20 A/μs  
0
50  
75  
125  
1
10  
100  
25  
100  
Number of Cycles at 60 Hz  
Junction Temperature (°C)  
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current  
Fig. 5 - Reverse Switching Characteristics Per Leg  
100  
100  
TJ = 25 °C  
f = 1.0 MHz  
Vsig = 50 mVp-p  
TJ = 125 °C  
10  
TJ = 100 °C  
1
10  
TJ = 25 °C  
0.1  
0.01  
1
0.1  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1
10  
100  
Instantaneous Forward Voltage (V)  
Reverse Voltage (V)  
Fig. 3 - Typical Instantaneous Forward Characteristics  
Fig. 6 - Typical Junction Capacitance  
Revision: 12-Jun-2019  
Document Number: 88557  
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
BYV29-xxx, BYV29F-xxx, BYV29B-xxx, UG8xT, UGF8xT, UGB8xT  
www.vishay.com  
Vishay General Semiconductor  
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)  
ITO-220AC  
TO-220AC  
0.415 (10.54) MAX.  
0.190 (4.83)  
0.170 (4.32)  
0.110 (2.79)  
0.100 (2.54)  
0.154 (3.91) DIA.  
0.148 (3.74) DIA.  
0.185 (4.70)  
0.370 (9.40)  
0.360 (9.14)  
0.404 (10.26)  
0.384 (9.75)  
0.175 (4.44)  
0.055 (1.39)  
0.076 (1.93) REF.  
0.113 (2.87)  
0.103 (2.62)  
0.045 (1.14)  
7° REF.  
0.140 (3.56) DIA.  
0.125 (3.17) DIA.  
0.076 (1.93) REF.  
0.135 (3.43) DIA.  
0.122 (3.08) DIA.  
45° REF.  
0.145 (3.68)  
0.135 (3.43)  
0.600 (15.24)  
0.580 (14.73)  
0.671 (17.04)  
0.651 (16.54)  
7° REF.  
0.350 (8.89)  
0.330 (8.38)  
PIN  
0.603 (15.32)  
0.573 (14.55)  
0.635 (16.13)  
0.625 (15.87)  
1
2
0.350 (8.89)  
0.330 (8.38)  
7° REF.  
0.191 (4.85)  
0.171 (4.35)  
PIN  
1.148 (29.16)  
1.118 (28.40)  
1
2
0.560 (14.22)  
0.530 (13.46)  
0.110 (2.79)  
0.100 (2.54)  
0.057 (1.45)  
0.045 (1.14)  
0.160 (4.06)  
0.140 (3.56)  
0.110 (2.79)  
0.100 (2.54)  
0.035 (0.89)  
0.025 (0.64)  
0.205 (5.21)  
0.057 (1.45)  
0.560 (14.22)  
0.025 (0.64)  
0.015 (0.38)  
PIN 1  
PIN 2  
0.045 (1.14)  
0.530 (13.46)  
0.028 (0.71)  
0.020 (0.51)  
CASE  
0.195 (4.95)  
0.105 (2.67)  
0.095 (2.41)  
0.037 (0.94)  
0.027 (0.68)  
0.205 (5.20)  
0.195 (4.95)  
0.022 (0.56)  
0.014 (0.36)  
D2PAK (TO-263AB)  
Mounting Pad Layout  
0.411 (10.45)  
0.380 (9.65)  
0.190 (4.83)  
0.160 (4.06)  
0.42 (10.66) min.  
0.055 (1.40)  
0.045 (1.14)  
0.245 (6.22)  
MIN.  
K
0.33 (8.38) min.  
0.055 (1.40)  
0.047 (1.19)  
0.360 (9.14)  
0.320 (8.13)  
0.624 (15.85)  
0.670 (17.02)  
0.591 (15.00)  
1
K
2
0.591 (15.00)  
0 to 0.01 (0 to 0.254)  
0.110 (2.79)  
0.090 (2.29)  
0.021 (0.53)  
0.014 (0.36)  
0.15 (3.81) min.  
0.037 (0.940)  
0.027 (0.686)  
0.08 (2.032) MIN.  
0.105 (2.67)  
0.095 (2.41)  
0.140 (3.56)  
0.110 (2.79)  
0.105 (2.67)  
0.095 (2.41)  
0.205 (5.20)  
0.195 (4.95)  
Revision: 12-Jun-2019  
Document Number: 88557  
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
Legal Disclaimer Notice  
www.vishay.com  
Vishay  
Disclaimer  
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE  
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.  
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,  
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other  
disclosure relating to any product.  
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or  
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all  
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,  
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular  
purpose, non-infringement and merchantability.  
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of  
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding  
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a  
particular product with the properties described in the product specification is suitable for use in a particular application.  
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over  
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s  
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,  
including but not limited to the warranty expressed therein.  
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining  
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.  
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.  
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for  
such applications.  
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document  
or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.  
© 2019 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED  
Revision: 01-Jan-2019  
Document Number: 91000  
1

相关型号:

BYV29F-200HE3_A/P

Rectifier Diode,
VISHAY

BYV29F-300

Rectifier diodes ultrafast
NXP

BYV29F-300

Dual Ultrafast Plastic Rectifiers
EIC

BYV29F-300

Ultrafast Rectifier
VISHAY

BYV29F-300-E3/45

DIODE 8 A, 300 V, SILICON, RECTIFIER DIODE, TO-220AC, ROHS COMPLIANT, PLASTIC, ITO-220AC, 2 PIN, Rectifier Diode
VISHAY

BYV29F-300-HE3/45

DIODE 8 A, 300 V, SILICON, RECTIFIER DIODE, TO-220AC, ROHS COMPLIANT, PLASTIC, ITO-220AC, 2 PIN, Rectifier Diode
VISHAY

BYV29F-300HE3/45

DIODE 8 A, 300 V, SILICON, RECTIFIER DIODE, TO-220AC, ROHS COMPLIANT, PLASTIC, ITO-220AC, 2 PIN, Rectifier Diode
VISHAY

BYV29F-400

Rectifier diodes ultrafast
NXP

BYV29F-400

Dual Ultrafast Plastic Rectifiers
EIC

BYV29F-400

Ultrafast Rectifier
VISHAY

BYV29F-400-E3/45

DIODE 8 A, 400 V, SILICON, RECTIFIER DIODE, TO-220AC, ROHS COMPLIANT, PLASTIC, ITO-220AC, 2 PIN, Rectifier Diode
VISHAY

BYV29F-400-HE3/45

DIODE 8 A, 400 V, SILICON, RECTIFIER DIODE, TO-220AC, ROHS COMPLIANT, PLASTIC, ITO-220AC, 2 PIN, Rectifier Diode
VISHAY