BYW52-TR [VISHAY]
DIODE AVALANCHE 200V 2A SOD57;
| 型号： | BYW52-TR |
| 厂家： | 
VISHAY |
| 描述： | DIODE AVALANCHE 200V 2A SOD57 局域网 |
| 文件： | 总4页 (文件大小：135K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BYW52, BYW53, BYW54, BYW55, BYW56
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Vishay Semiconductors
Standard Avalanche Sinterglass Diode
FEATURES
• Controlled avalanche characteristics
• Glass passivated junction
• Hermetically sealed package
• Low reverse current
• High surge current loading
• AEC-Q101 qualified
• Material categorization:
for definitions of compliance please see
949539
click logo to get started
www.vishay.com/doc?99912
DESIGN SUPPORT TOOLS
APPLICATIONS
• Rectification, general purpose
Models
Available
MECHANICAL DATA
Case: SOD-57
Terminals: plated axial leads, solderable per MIL-STD-750,
method 2026
Polarity: color band denotes cathode end
Mounting position: any
Weight: approx. 369 mg
ORDERING INFORMATION (Example)
DEVICE NAME
ORDERING CODE
TAPED UNITS
MINIMUM ORDER QUANTITY
BYW56
BYW56-TR
5000 per 10" tape and reel
5000 per ammopack
25 000
25 000
BYW56
BYW56-TAP
PARTS TABLE
PART
TYPE DIFFERENTIATION
PACKAGE
SOD-57
SOD-57
SOD-57
SOD-57
SOD-57
BYW52
V
V
V
V
R = 200 V; IF(AV) = 2 A
R = 400 V; IF(AV) = 2 A
R = 600 V; IF(AV) = 2 A
R = 800 V; IF(AV) = 2 A
BYW53
BYW54
BYW55
BYW56
VR = 1000 V; IF(AV) = 2 A
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
See electrical characteristics
tp = 10 ms, half sine wave
PART
BYW52
BYW53
BYW54
BYW55
BYW56
SYMBOL
VALUE
UNIT
V
VR = VRRM
VR = VRRM
VR = VRRM
VR = VRRM
VR = VRRM
IFSM
200
400
600
800
1000
50
V
Reverse voltage = repetitive peak reverse
voltage
V
V
V
Peak forward surge current
Repetitive peak forward current
Average forward current
A
IFRM
12
A
= 180 °
IF(AV)
2
A
Pulse avalanche peak power
tp = 20 μs half sine wave, Tj = 175 °C
PR
1000
W
Pulse energy in avalanche mode, non
repetitive (inductive load switch off)
i2t-rating
l(BR)R = 1 A, Tj = 175 °C
ER
i2t
20
mJ
8
A2s
°C
Junction and storage temperature range
Tj = Tstg
-55 to +175
Rev. 1.9, 21-Feb-18
Document Number: 86049
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BYW52, BYW53, BYW54, BYW55, BYW56
www.vishay.com
Vishay Semiconductors
MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
45
UNIT
K/W
K/W
Lead length l = 10 mm, TL = constant
On PC board with spacing 25 mm
RthJA
Junction ambient
RthJA
100
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
1
UNIT
Forward voltage
IF = 1 A
VF
IR
-
-
-
-
-
-
-
-
0.9
0.1
5
V
V
R = VRRM
1
μA
μA
V
Reverse current
VR = VRRM, Tj = 100 °C
IR = 100 μA, tp/T = 0.01, tp = 0.3 ms
VR = 4 V, f = 1 MHz
IR
10
Breakdown voltage
Diode capacitance
V(BR)
CD
trr
-
1600
-
18
-
pF
ns
ns
nC
IF = 0.5 A, IR = 1 A, iR = 0.25 A
IF = 1 A, dI/dt = 5 A/μs, VR = 50 V
lF = 1 A, dI/dt = 5 A/μs
4000
4000
200
Reverse recovery time
trr
-
Reverse recovery charge
Qrr
-
TYPICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified)
120
100
80
60
40
20
0
2.5
2.0
1.5
1.0
0.5
0.0
VR = VRRM
l
l
half sine wave
RthJA = 45 K/W
l = 10 mm
TL = constant
RthJA = 100 K/W
PCB: d = 25 mm
0
20 40 60 80 100 120 140 160 180
Tamb - Ambient Temperature (°C)
0
5
10
15
20
25
30
16351
949101
l - Lead Length (mm)
Fig. 1 - Typ. Thermal Resistance vs. Lead Length
10
Fig. 3 - Max. Average Forward Current vs.
Ambient Temperature
1000
100
10
VR = VRRM
Tj = 175 °C
1
Tj = 25 °C
0.1
0.01
1
0.001
25
50
75
100
125
150
175
0.0
0.4
0.8
1.2
1.6
Tj - Junction Temperature (°C)
16352
VF - Forward Voltage (V)
16350
Fig. 4 - Reverse Current vs. Junction Temperature
Fig. 2 - Forward Current vs. Forward Voltage
Rev. 1.9, 21-Feb-18
Document Number: 86049
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BYW52, BYW53, BYW54, BYW55, BYW56
www.vishay.com
Vishay Semiconductors
400
350
300
250
200
150
100
50
40
VR = VRRM
f = 1 MHz
35
30
25
20
15
10
5
PR - Limit at 100 % VR
PR - Limit at 80 % VR
0
0
0.1
1
10
100
25
50
75
100
125
150
175
16353
VR - Reverse Voltage (V)
16354
Tj - Junction Temperature (°C)
Fig. 5 - Max. Reverse Power Dissipation vs. Junction Temperature
Fig. 6 - Diode Capacitance vs. Reverse Voltage
1000
VRRM = 1000 V, RthJA = 100 K/W
100
tp/T = 0.5
Tamb = 25 °C
Tamb = 45 °C
tp/T = 0.2
tp/T = 0.1
10
tp/T = 0.05
Tamb = 60 °C
tp/T = 0.02
Tamb = 70 °C
Tamb = 100 °C
tp/T = 0.01
1
10-5
10-4
10-3
10-2
10-1
100
101
1
10
100
IFRM - Repetitive Peak
Forward Current (A)
tp - Pulse Length (s)
94 9178
Fig. 7 - Thermal Response
PACKAGE DIMENSIONS in millimeters (inches): SOD-57
26 (1.024) min.
26 (1.024) min.
4 (0.157) max.
20543
Rev. 1.9, 21-Feb-18
Document Number: 86049
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 09-Jul-2021
Document Number: 91000
1
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