BYX82-TR [VISHAY]

DIODE 2 A, 200 V, SILICON, RECTIFIER DIODE, ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2, Rectifier Diode;
BYX82-TR
型号: BYX82-TR
厂家: VISHAY    VISHAY
描述:

DIODE 2 A, 200 V, SILICON, RECTIFIER DIODE, ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2, Rectifier Diode

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BYX82 / 83 / 84 / 85 / 86  
Vishay Semiconductors  
Standard Avalanche Sinterglass Diode  
Features  
• Glass passivated junction  
• Hermetically sealed package  
• Low reverse current  
e2  
• High surge current loading  
• Lead (Pb)-free component  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
949539  
Applications  
Rectification, general purpose  
Polarity: Color band denotes cathode end  
Mounting Position: Any  
Mechanical Data  
Case: SOD-57 Sintered glass case  
Weight: approx. 369 mg  
Terminals: Plated axial leads, solderable per  
MIL-STD-750, Method 2026  
Parts Table  
Part  
Type differentiation  
VR = 200 V; IFAV = 2 A  
Package  
SOD-57  
BYX82  
BYX83  
BYX84  
BYX85  
BYX86  
V
V
V
V
R = 400 V; IFAV = 2 A  
R = 600 V; IFAV = 2 A  
R = 800 V; IFAV = 2 A  
R = 1000 V; IFAV = 2 A  
SOD-57  
SOD-57  
SOD-57  
SOD-57  
Absolute Maximum Ratings  
Tamb = 25 °C, unless otherwise specified  
Parameter  
Test condition  
Part  
Symbol  
Value  
200  
Unit  
V
Reverse voltage = Repetitive  
peak reverse voltage  
see electrical characteristics  
BYX82  
VR = VRRM  
BYX83  
BYX84  
BYX85  
BYX86  
VR = VRRM  
400  
V
V
V
V
A
A
A
V
V
V
R = VRRM  
R = VRRM  
R = VRRM  
IFSM  
600  
800  
1000  
Peak forward surge current  
Repetitive peak forward current  
Average forward current  
tp = 10 ms, half sinewave  
50  
IFRM  
10  
Tamb 45 °C  
IFAV  
2
i2*t-rating  
i2*t  
A2*s  
°C  
8
Junction and storage  
temperature range  
Tj = Tstg  
- 55 to + 175  
Document Number 86052  
Rev. 1.5, 14-Apr-05  
www.vishay.com  
1
BYX82 / 83 / 84 / 85 / 86  
Vishay Semiconductors  
Maximum Thermal Resistance  
Tamb = 25 °C, unless otherwise specified  
Parameter  
Junction ambient  
Test condition  
Symbol  
RthJA  
Value  
45  
Unit  
K/W  
l = 10 mm, TL = constant  
on PC board with spacing  
25 mm  
RthJA  
100  
K/W  
Electrical Characteristics  
Tamb = 25 °C, unless otherwise specified  
Parameter  
Test condition  
Symbol  
Min  
Typ.  
0.9  
Max  
1.0  
Unit  
V
Forward voltage  
Reverse current  
IF = 1 A  
VF  
IR  
V
V
V
R = VRRM  
0.1  
10  
20  
2
1
µA  
µA  
pF  
µs  
R = VRRM, Tj = 100 °C  
R = 4 V, f = 1 MHz  
IR  
25  
Diode capacitance  
CD  
trr  
Reverse recovery time  
Reverse recovery charge  
IF = 0.5 A, IR = 1 A, iR = 0.25 A  
4
6
IF = IR = 1 A, di/dt = 5 A/µs  
Qrr  
3
µC  
Typical Characteristics (Tamb = 25 °C unless otherwise specified)  
120  
100  
10  
l
l
T = 175°C  
j
80  
60  
40  
1
T = constant  
L
T
j
= 25°C  
0.1  
0.01  
20  
0
Scattering Limits  
30  
3.0  
0
5
10  
15  
20  
25  
0
0.6  
1.2  
1.8  
2.4  
l – Lead Length ( mm )  
V
– Forward Voltage ( V )  
94 9572  
94 9573  
F
Figure 1. Max. Thermal Resistance vs. Lead Length  
Figure 3. Forward Current vs. Forward Voltage  
240  
30  
R
thJA  
35 K/W  
R
thJA  
57 K/W  
200  
160  
120  
80  
R
thJA  
100 K/W  
24  
18  
V
RRM  
V
R
BYX  
82  
BYX  
84  
12  
6
BYX  
83  
BYX  
85  
40  
0
f = 1 MHz  
= 25°C  
BYX  
86  
T
j
0
1600  
100  
0
400  
800  
1200  
0.1  
1
10  
94 9579 Reverse / Repetitive Peak Reverse Voltage ( V )  
V
– Reverse Voltage ( V )  
94 9574  
R
Figure 2. Junction Temperature vs. Reverse/Repetitive Peak  
Reverse Voltage  
Figure 4. Typ. Diode Capacitance vs. Reverse Voltage  
www.vishay.com  
2
Document Number 86052  
Rev. 1.5, 14-Apr-05  
BYX82 / 83 / 84 / 85 / 86  
Vishay Semiconductors  
1000  
100  
10  
V
200 V  
100 K/W  
RRM  
R
thJA  
t /T = 0.5  
p
t /T = 0.2  
p
T
= 25°C  
amb  
t /T = 0.1  
p
T
amb  
=100°C  
T
amb  
= 45 °C  
t /T = 0.05  
p
T
amb  
=125°C  
T
amb  
= 70°C  
0.02  
0.01  
T
amb  
=150°C  
Single Pulse  
1
10  
–3  
–3  
–4  
–2  
–1  
0
1
0
1
2
10  
10  
t
10  
– Pulse Length ( s )  
10  
10  
10  
– Repetitive Peak  
10  
I
FRM  
94 9575  
p
Forward Current ( A )  
Figure 5. Thermal Response  
1000  
100  
10  
V
R
1000 V  
µs  
RRM  
t
10  
T
amb  
= 25°C  
100 K/W  
thJA  
t /T = 0.5  
p
T
amb  
= 45°C  
t /T = 0.2  
p
T
amb  
= 60°C  
t /T = 0.1  
p
T
amb  
= 70°C  
t /T = 0.05  
p
0.02  
0.01  
T
amb  
=100°C  
Single Pulse  
1
10  
–2  
–1  
0
1
–1  
0
1
10  
10  
10  
10  
10  
10  
– Repetitive Peak  
10  
I
FRM  
t
p
– Pulse Length ( s )  
94 9578  
Forward Current ( A )  
Figure 6. Thermal Response  
1000  
100  
10  
V
200 V  
RRM  
R
thJA  
57 K/W  
T
amb  
= 25°C  
t /T = 0.5  
p
t /T = 0.2  
t /T = 0.1  
p
T
amb  
= 70°C  
T
amb  
= 45°C  
p
T
amb  
100°C  
=
t /T = 0.05  
p
T
amb  
=125°C  
T
amb  
=150°C  
t /T = 0.02  
p
t /T = 0.01  
p
Single Pulse  
1
10  
–3  
–2  
–1  
0
0
1
10  
10  
t
10  
– Pulse Length ( s )  
10  
10  
10  
– Repetitive Peak  
I
FRM  
94 9577  
p
Forward Current ( A )  
Figure 7. Thermal Response  
Document Number 86052  
Rev. 1.5, 14-Apr-05  
www.vishay.com  
3
BYX82 / 83 / 84 / 85 / 86  
Vishay Semiconductors  
1000  
V
1000 V  
RRM  
t
10 µs  
R
thJA  
57 K/W  
100  
t /T = 0.5  
p
T
amb  
= 25 °C  
t /T = 0.2  
p
100°C  
T
amb  
= 45 °C  
10  
1
t /T = 0.1  
p
t /T = 0.05  
p
70°C  
t /T = 0.02  
p
Single Pulse  
T
amb  
=125°C  
t /T = 0.01  
p
–4  
–3  
–2  
–1  
0
0
1
10  
10  
10  
10  
10  
10  
10  
– Repetitive Peak  
Forward Current ( A )  
I
FRM  
t
– Pulse Length ( s )  
94 9576  
p
Figure 8. Thermal Response  
Package Dimensions in mm (Inches)  
3.6 (0.140)max.  
94 9538  
Sintered Glass Case  
SOD-57  
Cathode Identification  
ISO Method E  
0.82 (0.032) max.  
26(1.014) min.  
26(1.014) min.  
4.0 (0.156) max.  
www.vishay.com  
Document Number 86052  
Rev. 1.5, 14-Apr-05  
4
BYX82 / 83 / 84 / 85 / 86  
Vishay Semiconductors  
Ozone Depleting Substances Policy Statement  
It is the policy of Vishay Semiconductor GmbH to  
1. Meet all present and future national and international statutory requirements.  
2. Regularly and continuously improve the performance of our products, processes, distribution and operating  
systems with respect to their impact on the health and safety of our employees and the public, as well as  
their impact on the environment.  
It is particular concern to control or eliminate releases of those substances into the atmosphere which are  
known as ozone depleting substances (ODSs).  
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs  
and forbid their use within the next ten years. Various national and international initiatives are pressing for an  
earlier ban on these substances.  
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use  
of ODSs listed in the following documents.  
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments  
respectively  
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental  
Protection Agency (EPA) in the USA  
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.  
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting  
substances and do not contain such substances.  
We reserve the right to make changes to improve technical design  
and may do so without further notice.  
Parameters can vary in different applications. All operating parameters must be validated for each  
customer application by the customer. Should the buyer use Vishay Semiconductors products for any  
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all  
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal  
damage, injury or death associated with such unintended or unauthorized use.  
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany  
Document Number 86052  
Rev. 1.5, 14-Apr-05  
www.vishay.com  
5
Legal Disclaimer Notice  
Vishay  
Notice  
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,  
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.  
Information contained herein is intended to provide a product description only. No license, express or implied, by  
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's  
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express  
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness  
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.  
Customers using or selling these products for use in such applications do so at their own risk and agree to fully  
indemnify Vishay for any damages resulting from such improper use or sale.  
Document Number: 91000  
Revision: 08-Apr-05  
www.vishay.com  
1

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