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BZD27C24P [VISHAY]

Zener Diodes with Surge Current Specification; 齐纳二极管与浪涌电流规格
BZD27C24P
型号： BZD27C24P
厂家： VISHAY    VISHAY
描述：

Zener Diodes with Surge Current Specification
齐纳二极管与浪涌电流规格

二极管 齐纳二极管
文件： 总7页 (文件大小：239K)
中文：  中文翻译
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BZD27C3V6P to BZD27C200P  
Vishay Semiconductors  
Zener Diodes with Surge Current Specification  
Features  
• Sillicon Planar Zener Diodes  
• Low profile surface-mount package  
• Zener and surge current specification  
• Low leakage current  
e3  
17249  
• Excellent stability  
• High temperature soldering:  
260 °C/10 sec. at terminals  
• Lead (Pb)-free component  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
Packaging codes/options:  
GS18 / 10 k per 13 " reel, (8 mm tape), 50 k/box  
GS08 / 3 k per 7 " reel, (8 mm tape), 30 k/box  
Mechanical Data  
Case: JEDEC DO-219AB (SMF ) Plastic case  
Weight: approx. 15 mg  
®
Absolute Maximum Ratings  
Tamb = 25 °C, unless otherwise specified  
Parameter  
Power dissipation  
Test condition  
TL = 80 °C  
A = 25 °C  
Symbol  
Ptot  
Value  
2.3  
Unit  
W
0.81)  
300  
T
Ptot  
W
W
100 µs square pulse2)  
Non-repetitive peak pulse power  
dissipation  
PZSM  
10/1000 µs waveform (BZD27-  
C7V5P to BZD27-C100P)2)  
10/1000 µs waveform (BZD27-  
C110P to BZD27-C200P)2)  
PRSM  
PRSM  
150  
100  
W
W
1) Mounted on epoxy-glass PCB with 3 x 3 mm Cu pads (≥ 40 µm thick)  
2) TJ = 25 °C prior to surge  
Thermal Characteristics  
Tamb = 25 °C, unless otherwise specified  
Parameter  
Test condition  
Symbol  
RthJA  
Value  
180  
Unit  
K/W  
Thermal resistance junction to ambient air1)  
Thermal resistance junction to lead  
RthJL  
Tj  
30  
150  
K/W  
°C  
Maximum junction temperature  
Storage temperature range  
TS  
- 55 to + 150  
°C  
1) Mounted on epoxy-glass PCB with 3 x 3 mm Cu pads (≥ 40 µm thick)  
Electrical Characteristics  
Tamb = 25 °C, unless otherwise specified  
Parameter  
Forward voltage  
Test condition  
IF = 0.2 A  
Symbol  
VF  
Min  
Typ.  
Max  
1.2  
Unit  
V
Document Number 85810  
Rev. 1.8, 13-Apr-05  
www.vishay.com  
1
BZD27C3V6P to BZD27C200P  
Vishay Semiconductors  
Electrical Characteristics  
When used as voltage regulator diodes (TJ = 25 °C unless otherwise noted)  
Working Voltage1)  
Partnumber  
Marking  
Code  
Differential  
Resistance  
Temperature  
Coefficient  
Test  
Current  
Reverse Current at  
Reverse Voltage  
VZ @ IZT  
V
rdif @ IZ  
αZ @ IZ  
IZT  
IR  
VR  
V
Ω
%/°C  
mA  
µA  
max  
100  
50  
25  
10  
5
min  
3.4  
3.7  
4
max  
3.8  
4.1  
4.6  
5
typ  
max  
min  
-0.14  
-0.14  
-0.12  
-0.1  
max  
-0.04  
-0.04  
-0.02  
0
BZD27C3V6P  
BZD27C3V9P  
BZD27C4V3P  
BZD27C4V7P  
BZD27C5V1P  
BZD27C5V6P  
BZD27C6V2P  
BZD27C6V8P  
BZD27C7V5P  
BZD27C8V2P  
BZD27C9V1P  
BZD27C10P  
BZD27C11P  
BZD27C12P  
BZD27C13P  
BZD27C15P  
BZD27C16P  
BZD27C18P  
BZD27C20P  
BZD27C22P  
BZD27C24P  
BZD27C27P  
BZD27C30P  
BZD27C33P  
BZD27C36P  
BZD27C39P  
BZD27C43P  
BZD27C47P  
BZD27C51P  
BZD27C56P  
BZD27C62P  
BZD27C68P  
BZD27C75P  
BZD27C82P  
BZD27C91P  
BZD27C100P  
BZD27C110P  
BZD27C120P  
BZD27C130P  
BZD27C150P  
BZD27C160P  
BZD27C180P  
BZD27C200P  
D0  
D1  
D2  
D3  
D4  
D5  
D6  
D7  
D8  
D9  
E0  
E1  
E2  
E3  
E4  
E5  
E6  
E7  
E8  
E9  
F0  
F1  
F2  
F3  
F4  
F5  
F6  
F7  
F8  
F9  
G0  
G1  
G2  
G3  
G4  
G5  
G6  
G7  
G8  
G9  
H0  
H1  
H2  
4
8
100  
100  
100  
100  
100  
100  
100  
100  
100  
100  
50  
50  
50  
50  
50  
50  
25  
25  
25  
25  
25  
25  
25  
25  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
5
1
1
4
4
8
7
1
4.4  
4.8  
5.2  
5.8  
6.4  
7
3
7
1
5.4  
6
3
6
-0.08  
-0.04  
-0.01  
0
0.02  
0.04  
0.06  
0.07  
0.07  
0.08  
0.08  
0.09  
0.1  
1
2
4
10  
5
2
6.6  
7.2  
7.9  
8.7  
9.6  
10.6  
11.6  
12.7  
14.1  
15.6  
17.1  
19.1  
21.2  
23.3  
25.6  
28.9  
32  
2
3
2
1
3
10  
50  
10  
10  
7
3
1
2
0
3
7.7  
8.5  
9.4  
10.4  
11.4  
12.4  
13.8  
15.3  
16.8  
18.8  
20.8  
22.8  
25.1  
28  
1
2
0.03  
0.03  
0.05  
0.05  
0.05  
0.05  
0.05  
0.06  
0.06  
0.06  
0.06  
0.06  
0.06  
0.06  
0.06  
0.06  
0.06  
0.07  
0.07  
0.07  
0.07  
0.08  
0.08  
0.08  
0.08  
0.08  
0.09  
0.09  
0.09  
0.09  
0.09  
0.09  
0.09  
0.09  
3
2
4
5
2
4
7.5  
8.2  
9.1  
10  
11  
12  
13  
15  
16  
18  
20  
22  
24  
27  
30  
33  
36  
39  
43  
47  
51  
56  
62  
68  
75  
82  
91  
100  
110  
120  
130  
150  
4
7
4
4
7
0.1  
3
5
10  
10  
15  
15  
15  
15  
15  
15  
15  
15  
40  
40  
45  
45  
60  
60  
80  
80  
100  
100  
200  
200  
250  
250  
300  
300  
350  
400  
500  
0.1  
2
5
0.1  
1
6
0.11  
0.11  
0.11  
0.11  
0.11  
0.11  
0.11  
0.11  
0.11  
0.11  
0.12  
0.12  
0.12  
0.12  
0.13  
0.13  
0.13  
0.13  
0.13  
0.13  
0.13  
0.13  
0.13  
0.13  
0.13  
0.13  
0.13  
1
6
1
6
1
6
1
7
1
7
1
8
1
31  
35  
8
1
34  
38  
21  
21  
24  
24  
25  
25  
25  
25  
30  
30  
60  
60  
80  
80  
110  
130  
150  
180  
200  
1
37  
41  
1
40  
46  
1
44  
50  
1
48  
54  
1
52  
60  
1
58  
66  
1
64  
72  
1
70  
79  
1
77  
87  
1
85  
96  
1
94  
106  
116  
127  
141  
156  
171  
191  
212  
5
1
104  
114  
124  
138  
153  
168  
188  
5
1
5
1
5
1
5
1
5
1
5
1
5
1
1) Pulse test: tp ≤ 5 ms.  
www.vishay.com  
2
Document Number 85810  
Rev. 1.8, 13-Apr-05  
BZD27C3V6P to BZD27C200P  
Vishay Semiconductors  
Electrical Characteristics  
When used as protection diodes (TJ = 25 °C unless otherwise noted)  
Partnumber  
Rev.  
Breakdown  
Voltage  
Test  
Current  
Temperature Coefficient  
Clamping Voltage  
Reverse Current at  
Stand-Off Voltage  
1)  
V(BR)R at  
Itest  
Itest  
mA  
αZ @ Itest  
VC  
IR  
at VWM  
V
at IRSM  
V
%/°C  
V
A
µA  
max  
1500  
1200  
100  
20  
5
min  
7
min  
0
max  
0.07  
0.08  
0.08  
0.09  
0.1  
max  
11.3  
12.3  
13.3  
14.8  
15.7  
17  
BZD27C7V5P  
BZD27C8V2P  
BZD27C9V1P  
BZD27C10P  
BZD27C11P  
BZD27C12P  
BZD27C13P  
BZD27C15P  
BZD27C16P  
BZD27C18P  
BZD27C20P  
BZD27C22P  
BZD27C24P  
BZD27C27P  
BZD27C30P  
BZD27C33P  
BZD27C36P  
BZD27C39P  
BZD27C43P  
BZD27C47P  
BZD27C51P  
BZD27C56P  
BZD27C62P  
BZD27C68P  
BZD27C75P  
BZD27C82P  
BZD27C91P  
BZD27C100P  
BZD27C110P  
BZD27C120P  
BZD27C130P  
BZD27C150P  
BZD27C160P  
BZD27C180P  
BZD27C200P  
100  
100  
50  
50  
50  
50  
50  
50  
25  
25  
25  
25  
25  
25  
25  
25  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
5
13.3  
12.2  
11.3  
10.1  
9.6  
6.2  
6.8  
7.5  
8.2  
9.1  
10  
7.7  
8.5  
9.4  
10.4  
11.4  
12.4  
13.8  
15.3  
16.8  
18.8  
20.8  
22.8  
25.1  
28  
0.03  
0.03  
0.05  
0.05  
0.05  
0.05  
0.05  
0.06  
0.06  
0.06  
0.06  
0.06  
0.06  
0.06  
0.06  
0.06  
0.06  
0.07  
0.07  
0.07  
0.07  
0.08  
0.08  
0.08  
0.08  
0.09  
0.09  
0.09  
0.09  
0.09  
0.09  
0.09  
0.09  
0.09  
0.1  
8.8  
5
0.1  
18.9  
20.9  
22.9  
25.6  
28.4  
31  
7.9  
5
11  
0.1  
7.2  
5
12  
0.11  
0.11  
0.11  
0.11  
0.11  
0.11  
0.11  
0.11  
0.11  
0.11  
0.12  
0.12  
0.12  
0.12  
0.13  
0.13  
0.13  
0.13  
0.13  
0.13  
0.13  
0.13  
0.13  
0.13  
0.13  
0.13  
0.13  
6.6  
5
13  
5.9  
5
15  
5.3  
5
16  
4.8  
5
18  
33.8  
38.1  
42.2  
46.2  
50.1  
54.1  
60.7  
65.5  
70.8  
78.6  
86.5  
94.4  
103.5  
114  
126  
139  
139  
152  
169  
187  
205  
229  
254  
4.4  
5
20  
3.9  
5
22  
3.6  
5
24  
31  
3.2  
5
27  
34  
3
5
30  
37  
2.8  
5
33  
40  
2.5  
5
36  
44  
2.3  
5
39  
48  
2.1  
5
43  
52  
1.9  
5
47  
58  
1.7  
5
51  
64  
1.6  
5
56  
70  
1.5  
5
62  
77  
1.3  
5
68  
85  
1.2  
5
75  
94  
5
1.1  
5
82  
104  
114  
124  
138  
153  
168  
188  
5
0.72  
0.65  
0.59  
0.53  
0.48  
0.43  
0.39  
5
91  
5
5
100  
110  
120  
130  
150  
160  
5
5
5
5
5
5
5
5
5
5
1) Non-repetitive peak reverse current in accordance with "IEC 60-1, Section 8" (10/1000 µs pulse); see Fig. 5.  
Document Number 85810  
Rev. 1.8, 13-Apr-05  
www.vishay.com  
3
BZD27C3V6P to BZD27C200P  
Vishay Semiconductors  
Typical Characteristics (Tamb = 25 °C unless otherwise specified)  
10.00  
1.00  
0.10  
160  
140  
120  
100  
80  
Typ. V  
Max. V  
F
F
60  
40  
20  
0
0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6  
0
25 50 75 100 125 150 175 200  
– Zener Voltage ( V )  
17411  
17414  
V
F
– Forward Voltage ( V )  
V
Znom  
Figure 1. Forward Current vs. Forward Voltage  
Figure 4. Maximum Pulse Power Dissipation vs. Zener Voltage  
10000  
I
RSM  
(%)  
C5V1P  
C6V8P  
C12P  
C18P  
100  
90  
t
t
=
=
10 µs  
1
1000  
100  
10  
1000 µ s  
2
50  
C27P  
1.0  
C51P  
10  
C200P  
0.5  
t
t
1
0.0  
1.5  
2.0  
2.5  
3.0  
t
2
V
R
– Reverse Voltage (V)  
17415  
17412  
Figure 2. Typ. Diode Capacitance vs. Reverse Voltage  
Figure 5. Non-Repetitive Peak Reverse Current Pulse Definition  
3.0  
tie point temperature  
2.5  
2.0  
1.5  
ambient temperature  
1.0  
0.5  
0.0  
0
25  
50  
75  
100 125 150  
17413  
T
amb  
– Ambient Temperature ( qC )  
Figure 3. Power Dissipation vs. Ambient Temperature  
www.vishay.com  
Document Number 85810  
Rev. 1.8, 13-Apr-05  
4
BZD27C3V6P to BZD27C200P  
Vishay Semiconductors  
Package Dimensions in mm (Inches)  
0.85 (0.033)  
0.35 (0.014)  
3.9 (0.152)  
3.5 (0.137)  
5
0.16 (0.006)  
0.99 (0.039)  
0.97 (0.038)  
Z
5
Cathode Band  
Top View  
Detail  
Z
enlarged  
1.9 (0.074)  
1.7 (0.066)  
1.2 (0.047)  
0.8 (0.031)  
0.10 max  
2.9 (0.113)  
2.7 (0.105)  
ISO Method E  
Mounting Pad Layout  
1.6 (0.062)  
1.3 (0.051)  
1.4 (0.055)  
17247  
Document Number 85810  
Rev. 1.8, 13-Apr-05  
www.vishay.com  
5
BZD27C3V6P to BZD27C200P  
Vishay Semiconductors  
Blistertape for SMF  
PS  
18513  
www.vishay.com  
6
Document Number 85810  
Rev. 1.8, 13-Apr-05  
BZD27C3V6P to BZD27C200P  
Vishay Semiconductors  
Ozone Depleting Substances Policy Statement  
It is the policy of Vishay Semiconductor GmbH to  
1. Meet all present and future national and international statutory requirements.  
2. Regularly and continuously improve the performance of our products, processes, distribution and operating  
systems with respect to their impact on the health and safety of our employees and the public, as well as  
their impact on the environment.  
It is particular concern to control or eliminate releases of those substances into the atmosphere which are  
known as ozone depleting substances (ODSs).  
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs  
and forbid their use within the next ten years. Various national and international initiatives are pressing for an  
earlier ban on these substances.  
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use  
of ODSs listed in the following documents.  
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments  
respectively  
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental  
Protection Agency (EPA) in the USA  
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.  
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting  
substances and do not contain such substances.  
We reserve the right to make changes to improve technical design  
and may do so without further notice.  
Parameters can vary in different applications. All operating parameters must be validated for each  
customer application by the customer. Should the buyer use Vishay Semiconductors products for any  
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all  
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal  
damage, injury or death associated with such unintended or unauthorized use.  
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany  
Document Number 85810  
Rev. 1.8, 13-Apr-05  
www.vishay.com  
7

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