BZT52C47-V-G08 [VISHAY]
DIODE 47 V, 0.41 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, GREEN PACKAGE-2, Voltage Regulator Diode;
| 型号： | BZT52C47-V-G08 |
| 厂家： | 
VISHAY |
| 描述： | DIODE 47 V, 0.41 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, GREEN PACKAGE-2, Voltage Regulator Diode |
| 文件： | 总8页 (文件大小：113K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BZT52-V-G-Series
Vishay Semiconductors
Small Signal Zener Diodes
Features
• Silicon planar power zener diodes
• These diodes are also available in other
case styles and other configurations
including: the SOT-23 case with type
designation BZX84 series, the dual zener
diode common anode configuration in the
SOT-23 case with type designation AZ23
series and the dual zener diode common
cathode configuration in the SOT-23 case with
type designation DZ23 series.
17431
• The zener voltages are graded according to the
international E 24 standard.
• AEC-Q101 qualified
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Mechanical Data
Case: SOD-123
Weight: approx. 9.3 mg
Packaging codes/options:
18/10 k per 13 " reel (8 mm tape), 10 k/box
08/3 k per 7 " reel (8 mm tape), 15 k/box
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Parameter
Test condition
Symbol
Value
Unit
Zener current see table
" Characteristics "
500 2)
410 1)
Ptot
Ptot
Power dissipation
Power dissipation
mW
mW
1) Diode on ceramic substrate 0.7 mm; 2.5 mm2 pad areas
2) Diode on ceramic substrate 0.7 mm; 5 mm2 pad areas
Thermal Characteristics
T
= 25 °C, unless otherwise specified
amb
Parameter
Test condition
Symbol
RthJA
Value
300 1)
Unit
Thermal resistance junction to
ambient air
°C/W
TJ
Junction temperature
150
°C
°C
TS
Storage temperature range
- 65 to + 150
1) Valid provided that electrodes are kept at ambient temperature
** Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number 83340
Rev. 1.0, 14-Jun-10
www.vishay.com
1
BZT52-V-G-Series
Vishay Semiconductors
Electrical Characteristics
Zener voltage
Test
current
Temp.
coefficient
Reverse Admissible Zener
voltage
Dynamic resistance
range1)
current4)
IZ at IZ at
Tamb Tamb
VR at IR
Marking
VZ at IZT1
rzj at IZT1
rzj at IZT2
IZT1
mA
at IZT1
=
=
=
Part number
code
100 nA
45 °C
25 °C
αVZ
(10-4/°C)
V
Ω
V
mA
min.
2.2
2.5
2.8
3.1
3.4
3.7
4
max.
2.6
2.9
3.2
3.5
3.8
4.1
4.6
5
BZT52C2V4-V-G
BZT52C2V7-V-G
BZT52C3V0-V-G
BZT52C3V3-V-G
BZT52C3V6-V-G
BZT52C3V9-V-G
BZT52C4V3-V-G
BZT52C4V7-V-G
BZT52C5V1-V-G
BZT52C5V6-V-G
BZT52C6V2-V-G
BZT52C6V8-V-G
BZT52C7V5-V-G
BZT52C8V2-V-G
BZT52C9V1-V-G
BZT52C10-V-G
BZT52C11-V-G
BZT52C12-V-G
BZT52C13-V-G
BZT52C15-V-G
BZT52C16-V-G
BZT52C18-V-G
BZT52C20-V-G
BZT52C22-V-G
BZT52C24-V-G
BZT52C27-V-G
BZT52C30-V-G
BZT52C33-V-G
BZT52C36-V-G
BZT52C39-V-G
BZT52C43-V-G
BZT52C47-V-G
BZT52C51-V-G
BZT52C56-V-G
Y1
Y2
Y3
Y4
Y5
Y6
Y7
Y8
Y9
YA
YB
YC
YD
YE
YF
YG
YH
YI
85
600
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2.5
- 9 to - 4
- 9 to - 4
-
-
-
113
98
92
85
77
71
64
56
50
45
41
37
34
30
28
25
23
21
19
17
15
14
13
11
10
9
-
134
118
109
100
92
84
76
67
59
54
49
44
40
36
33
30
28
25
23
20
18
17
16
13
12
10
9
75 (< 83)
80 (< 95)
80 (< 95)
80 (< 95)
80 (< 95)
80 (< 95)
70 (< 78)
30 (< 60)
10 (< 40)
4.8 (< 10)
4.5 (< 8)
4 (< 7)
< 500
< 500
< 500
< 500
< 500
< 500
< 500
< 480
< 400
< 200
< 150
< 50
- 9 to - 3
-
- 8 to - 3
-
- 8 to - 3
-
- 7 to - 3
-
- 6 to - 1
-
4.4
4.8
5.2
5.8
6.4
7
- 5 to + 2
-
5.4
6
- 3 to + 4
> 0.8
> 1
> 2
> 3
> 5
> 6
> 7
> 7.5
> 8.5
> 9
> 10
> 11
> 12
> 14
> 15
> 17
> 18
> 20
> 22.5
> 25
> 27
> 29
> 32
> 35
> 38
-
- 2 to + 6
6.6
7.2
7.9
8.7
9.6
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
28.9
32
- 1 to + 7
+ 2 to + 7
+ 3 to + 7
+ 4 to + 7
+ 5 to + 8
+ 5 to + 8
+ 5 to + 9
+ 6 to + 9
+ 7 to + 9
+ 7 to + 9
+ 8 to + 9.5
+ 8 to + 9.5
+ 8 to + 10
+ 8 to + 10
+ 8 to + 10
+ 8 to + 10
+ 8 to + 10
+ 8 to + 10
+ 8 to + 10
+ 10 to + 12
+ 10 to + 12
+ 10 to + 12
+ 10 to + 12
7.7
8.5
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28
4.5 (< 7)
4.8 (< 10)
5.2 (< 15)
6 (< 20)
< 50
< 50
< 70
< 70
7 (< 20)
< 90
YK
YL
YM
YN
YO
YP
YR
YS
YT
YU
YW
YX
YY
YZ
Z1
9 (< 25)
< 110
< 110
< 170
< 170
< 220
< 220
< 220
< 250
< 250
< 250
< 250
< 300
< 700
< 750
< 750
11 (< 30)
13 (< 40)
18 (< 50)
20 (< 50)
25 (< 55)
28 (< 80)
30 (< 80)
35 (< 80)
40 (< 80)
40 (< 90)
50 (< 90)
60 (< 100)
70 (< 100)
70 (< 100)
31
35
8
34
38
8
9
37
41
7
8
40
46
6
7
44
50
5
6
48
54
5
6
< 135 2)
< 150 2)
< 200 2)
< 250 2)
< 1000 3)
< 1000 3)
< 1000 3)
< 1500 3)
typ. + 10 2)
typ. + 10 2)
typ. + 10 2)
typ. + 10 2)
Z2
52
60
-
-
BZT52C62-V-G
BZT52C68-V-G
BZT52C75-V-G
Z3
Z4
Z5
58
64
70
66
72
79
2.5
2.5
2.5
-
-
-
-
-
-
-
-
-
IZT1 = 5 mA, IZT2 = 1 mA
1) Measured with pulses Tp = 5 ms
2) = IZT1 = 2.5 mA
3) = IZT2 = 0.5 mA
4) Valid provided that electrodes are kept at ambient temperature
www.vishay.com
2
Document Number 83340
Rev. 1.0, 14-Jun-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
BZT52-V-G-Series
Vishay Semiconductors
Electrical Characteristics
Zener voltage
Test
current
Temp.
coefficient
Reverse Admissible Zener
voltage
Dynamic resistance
range1)
current 4)
IZ at IZ at
Tamb Tamb
VR at IR
VZ at IZT1
rzj at IZT1
rzj at IZT2
IZT1
mA
at IZT1
=
=
=
Part number
Marking
code
100 nA
45 °C
25 °C
αVZ
(10-4/°C)
V
Ω
V
mA
min.
max.
2.45
2.75
3.06
3.37
3.67
3.98
4.39
4.79
5.2
BZT52B2V4-V-G
BZT52B2V7-V-G
BZT52B3V0-V-G
BZT52B3V3-V-G
BZT52B3V6-V-G
BZT52B3V9-V-G
BZT52B4V3-V-G
BZT52B4V7-V-G
BZT52B5V1-V-G
BZT52B5V6-V-G
BZT52B6V2-V-G
BZT52B6V8-V-G
BZT52B7V5-V-G
BZT52B8V2-V-G
BZT52B9V1-V-G
BZT52B10-V-G
BZT52B11-V-G
BZT52B12-V-G
BZT52B13-V-G
BZT52B15-V-G
BZT52B16-V-G
BZT52B18-V-G
BZT52B20-V-G
BZT52B22-V-G
BZT52B24-V-G
BZT52B27-V-G
BZT52B30-V-G
BZT52B33-V-G
BZT52B36-V-G
BZT52B39-V-G
BZT52B43-V-G
BZT52B47-V-G
BZT52B51-V-G
BZT52B56-V-G
V1
V2
V3
V4
V5
V6
V7
V8
V9
VA
VB
VC
VD
VE
VF
VG
VH
VI
2.35
2.65
2.94
3.23
3.53
3.82
4.21
4.61
5
85
600
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2.5
- 9 to - 4
- 9 to - 4
-
-
-
113
98
92
85
77
71
64
56
50
45
41
37
34
30
28
25
23
21
19
17
15
14
13
11
10
9
-
134
118
109
100
92
84
76
67
59
54
49
44
40
36
33
30
28
25
23
20
18
17
16
13
12
10
9
75 (< 83)
80 (< 95)
80 (< 95)
80 (< 95)
80 (< 95)
80 (< 95)
70 (< 78)
30 (< 60)
10 (< 40)
4.8 (< 10)
4.5 (< 8)
4 (< 7)
< 500
< 500
< 500
< 500
< 500
< 500
< 500
< 480
< 400
< 200
< 150
< 50
- 9 to - 3
-
- 8 to - 3
-
- 8 to - 3
-
- 7 to - 3
-
- 6 to - 1
-
- 5 to + 2
-
- 3 to + 4
> 0.8
> 1
> 2
> 3
> 5
> 6
> 7
> 7.5
> 8.5
> 9
> 10
> 11
> 12
> 14
> 15
> 17
> 18
> 20
> 22.5
> 25
> 27
> 29
> 32
> 35
> 38
-
5.49
6.08
6.66
7.35
8.04
8.92
9.8
5.71
6.32
6.94
7.65
8.36
9.28
10.2
11.2
12.2
13.3
15.3
16.3
18.4
20.4
22.4
24.5
27.5
30.6
33.7
36.7
39.8
43.9
47.9
52
- 2 to + 6
- 1 to + 7
+ 2 to + 7
+ 3 to + 7
+ 4 to + 7
+ 5 to + 8
+ 5 to + 8
+ 5 to + 9
+ 6 to + 9
+ 7 to + 9
+ 7 to + 9
+ 8 to + 9.5
+ 8 to + 9.5
+ 8 to + 10
+ 8 to + 10
+ 8 to + 10
+ 8 to + 10
+ 8 to + 10
+ 8 to + 10
+ 8 to + 10
+ 10 to + 12
+ 10 to + 12
+ 10 to + 12
+ 10 to + 12
4.5 (< 7)
4.8 (< 10)
5.2 (< 15)
6 (< 20)
< 50
< 50
< 70
10.8
11.8
12.7
14.7
15.7
17.6
19.6
21.6
23.5
26.5
29.4
32.3
35.3
38.2
42.1
46.1
50
< 70
7 (< 20)
< 90
VK
VL
VM
VN
VO
VP
VR
VS
VT
VU
VW
VX
VY
VZ
U1
U2
9 (< 25)
< 110
< 110
< 170
< 170
< 220
< 220
< 220
< 250
< 250
< 250
< 250
< 300
< 700
< 750
< 750
11 (< 30)
13 (< 40)
18 (< 50)
20 (< 50)
25 (< 55)
28 (< 80)
30 (< 80)
35 (< 80)
40 (< 80)
40 (< 90)
50 (< 90)
60 (< 100)
70 (< 100)
70 (< 100)
8
8
9
7
8
6
7
5
6
5
6
< 135 2)
< 150 2)
< 200 2)
< 250 2)
< 1000 3)
< 1000 3)
< 1000 3)
< 1500 3)
typ. + 10 2)
typ. + 10 2)
typ. + 10 2)
typ. + 10 2)
54.9
57.1
-
-
BZT52B62-V-G
BZT52B68-V-G
BZT52B75-V-G
U3
U4
U5
60.8
66.6
73.5
63.2
69.4
76.5
2.5
2.5
2.5
-
-
-
-
-
-
-
-
-
IZT1 = 5 mA, IZT2 = 1 mA
1) Measured with pulses Tp = 5 ms
2) = IZT1 = 2.5 mA
3) = IZT2 = 0.5 mA
4) Valid provided that electrodes are kept at ambient temperature
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number 83340
Rev. 1.0, 14-Jun-10
www.vishay.com
3
BZT52-V-G-Series
Vishay Semiconductors
Typical Characteristics (T
= 25 °C unless otherwise specified)
amb
mA
103
1000
TJ = 25 °C
5
4
3
102
2
IF
10
1
rzj
TJ = 100 °C
100
5
4
3
10-1
10-2
TJ = 25 °C
2
100
2.7
3.6
10-3
10-4
10-5
5
4
3
4.7
5.1
2
5.6
1
0
0.2
0.4
0.6
0.8
VF
1V
0.1
18117
2
5
1
2
5
10
2
5 100 mA
18114
IZ
Figure 1. Forward Characteristics
Figure 4. Dynamic Resistance vs. Zener Current
pF
1000
mW
500
400
300
200
100
0
TJ = 25 °C
7
5
4
VR = 1 V
Ctot
3
2
Ptot
VR = 2 V
100
7
VR = 1 V
5
4
VR = 2 V
3
2
10
1
2
3
4
5
10
2
3
4
5
100 V
0
100
Tamb
200 °C
18888
18118
VZ at IZ = 5 mA
Figure 2. Admissible Power Dissipation vs. Ambient Temperature
Figure 5. Capacitance vs. Zener Voltage
°C/W
Ω
100
103
7
TJ = 25 °C
5
4
5
4
3
2
0.5
RthA
3
2
33
rzj
102
0.2
27
22
7
0.1
5
0.05
0.02
4
3
10
18
2
0.01
15
12
10
V = 0
5
4
10
7
tp
3
5
4
3
tp
T
2
PI
6.8/8.2
2
T
6.2
1
1
10-5 10-4 10-3
10-2 10-1
tp
1
10s
0.1
18119
2
5
1
2
5
10
IZ
2
5 100 mA
18116
Figure 3. Pulse Thermal Resistance vs. Pulse Duration
Figure 6. Dynamic Resistance vs. Zener Current
www.vishay.com
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Document Number 83340
Rev. 1.0, 14-Jun-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
BZT52-V-G-Series
Vishay Semiconductors
mV/°C
25
103
7
Ω
Tj = 25 °C
5
4
20
ΔVZ
5 mA
1 mA
Rzj
3
2
47 + 51
43
IZ
=
Δ
Tj
20 mA
39
15
10
36
102
7
5
4
5
0
3
2
- 5
1
18135
10
0.1
2
3
4
5
1
2
3 4 5
10
mA
2
3
4
5
10
2
3
4
5
100 V
VZ at IZ = 5 mA
18120
IZ
≥
V
27 V, I = 2 mA
Figure 7. Dynamic Resistance vs. Zener Current
Figure 10. Temperature Dependence of Zener Voltage vs.
Zener Voltage
V
0.8
Ω
103
25
15
ΔVZ
0.7
VZ at IZ = 5 mA
5
Rzth = RthA x VZ x
4
Δ
Tj
10
3
2
0.6
0.5
0.4
Rzth
ΔVZ
102
8
7
5
4
3
0.3
0.2
0.1
6.2
5.9
2
10
5.6
5.1
5
4
3
0
- 1
negative
positive
2
4.7
3.6
- 0.2
1
100 120 140 C
Tj
0
20 40 60 80
1
2
3
4
5
10
2
3
4
5
100 V
18124
18121
VZ at IZ = 5 mA
Figure 8. Thermal Differential Resistance vs. Zener Voltage
Figure 11. Change of Zener Voltage vs. Junction Temperature
Ω
100
mV/°C
100
IZ = 5 mA
7
5
4
ΔVZ
80
Rzj
3
2
Δ
Tj
60
10
7
40
20
0
5
4
3
2
T = 25 °C
IZj = 5 mA
1
1
2
3
4
5
10
2
3
4
5
100 V
0
20
40
60
80
100 V
18122
VZ
VZ at IZ = 2 mA
18136
Figure 9. Dynamic Resistance vs. Zener Voltage
Figure 12. Temperature Dependence of Zener Voltage vs.
Zener Voltage
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number 83340
Rev. 1.0, 14-Jun-10
www.vishay.com
5
BZT52-V-G-Series
Vishay Semiconductors
mA
50
T = 25 °C
j
3.9
5.6
2.7
6.8
3.3 4.7
40
8.2
lZ
30
20
Test
current
IZ 5 mA
10
0
0
1
2
3
4
5
6
7
8
9
10 V
18158
V
18111
Z
Figure 13. Change of Zener Voltage vs. Junction Temperature
Figure 16. Breakdown Characteristics
mA
30
10
12
T = 25 °C
j
l
Z
15
20
18
22
27
Test
10
0
current
33
36
I
5 mA
Z
18159
0
10
20
30
40 V
18112
V
Z
Figure 14. Change of Zener Voltage from Turn-on up to the Point
of Thermal Equilibrium vs. Zener Voltage
Figure 17. Breakdown Characteristics
V
5
VZ = rzth x IZ
Δ
4
3
2
ΔVZ
IZ = 5 mA
1
IZ = 2.5 mA
0
0
20
40
60
80
100 V
18160
VZ at IZ = 5 mA
Figure 15. Change of Zener Voltage from Turn-on up to the Point
of Thermal Equilibrium vs. Zener Voltage
www.vishay.com
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Document Number 83340
Rev. 1.0, 14-Jun-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
BZT52-V-G-Series
Vishay Semiconductors
18157
Figure 18. Breakdown Characteristics
Package Dimensions in millimeters (inches): SOD-123
0.45 (0.018)
0.25 (0.010)
0.5 (0.020) ref.
Cathode bar
Mounting Pad Layout
2.85 (0.112)
2.55 (0.100)
0.85 (0.033)
0.85 (0.033)
3.85 (0.152)
2.5 (0.098)
3.55 (0.140)
Rev. 4 - Date: 24. Sep. 2009
Document no.: S8-V-3910.01-001 (4)
17432
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number 83340
Rev. 1.0, 14-Jun-10
www.vishay.com
7
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
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