BZT55A12GS18 [VISHAY]

Zener Diode, 12V V(Z), 1%, 0.5W, Silicon, Unidirectional, SOD-80, QUADROMELF-2;


型号：	BZT55A12GS18
厂家：	VISHAY
描述：	Zener Diode, 12V V(Z), 1%, 0.5W, Silicon, Unidirectional, SOD-80, QUADROMELF-2
文件：	总6页 (文件大小：153K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

BZT55C...

Vishay Telefunken

Silicon Epitaxial Planar Z–Diodes

Features

Very sharp reverse characteristic

Low reverse current level

Very high stability

Low noise

Available with tighter tolerances

96 12009

Applications

Voltage stabilization

Order Instruction

Type

BZT55C2V4

Ordering Code

BZT55C2V4–GS08

BZT55C2V4–GS18

Remarks

Tape and Reel (2.500 pcs)

Tape and Reel (10.000 pcs)

Absolute Maximum Ratings

T = 25 C

Parameter

Power dissipation

Z–current

Junction temperature

Storage temperature range

Test Conditions

Type

Symbol

Value

500

Unit

300K/W

thJA

P /V

175

–65...+175

stg

Maximum Thermal Resistance

T = 25 C

Parameter

Junction ambient

Test Conditions

on PC board 50 mmx50 mmx1.6 mm

Symbol

thJA

Value

500

Unit

K/W

Electrical Characteristics

T = 25 C

Parameter

Forward voltage

Test Conditions

I =200mA

Type

Symbol Min

Typ Max Unit

1.5

Document Number 85601

Rev. 4, 12-Mar-01

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1 (6)

BZT55C...

Vishay Telefunken

Type

BZT55C...

2 V 4

2 V 7

3 V 0

3 V 3

3 V 6

3 V 9

4 V 3

4 V 7

5 V 1

5 V 6

6 V 2

6 V 8

7 V 5

8 V 2

9 V 1

for V and r

at I

I and I at V

%/K

Znom

zjT

zjk

2.4

2.7

3.0

3.3

3.6

3.9

4.3

4.7

5.1

5.6

6.2

6.8

7.5

8.2

9.1

2.28 to 2.56

2.5 to 2.9

2.8 to 3.2

3.1 to 3.5

3.4 to 3.8

3.7 to 4.1

4.0 to 4.6

4.4 to 5.0

4.8 to 5.4

5.2 to 6.0

5.8 to 6.6

6.4 to 7.2

7.0 to 7.9

7.7 to 8.7

8.5 to 9.6

9.4 to 10.6

10.4 to 11.6

11.4 to 12.7

12.4 to 14.1

13.8 to 15.6

15.3 to 17.1

16.8 to 19.1

18.8 to 21.2

20.8 to 23.3

22.8 to 25.6

25.1 to 28.9

28 to 32

< 85 < 600

< 90 < 600

< 80 < 600

< 60 < 550

< 40 < 450

< 10 < 200

< 50

< 10

< 4

< 2

< 100

< 50

< 40

< 20

< 10

< 2

< 5

< 10 39

< 10 43

< 10 47

< 10 51

< 10 56

–0.09 to –0.06

–0.08 to –0.05

–0.06 to –0.03

–0.05 to +0.02

–0.02 to +0.02

–0.05 to +0,05

0.03 to 0.06

0.03 to 0.07

0.03 to 0.08

0.03 to 0.09

0.03 to 0.1

0.03 to 0.11

0.04 to 0.12

< 2

< 1

< 0.5

< 0.1

< 8

< 7

< 150

< 50

< 70

< 90

6.2

6.8

7.5

8.2

9.1

< 10

< 15

< 20

< 26 < 110

< 30 < 110

< 40 < 170

< 50 < 170

< 55 < 220

< 80 < 220

< 90 < 500 0.5

< 90 < 600 0.5

< 110 < 700 0.5

< 125 < 700 0.5

< 135 < 1000 0.5

< 150 < 1000 0.5

< 200 < 1000 0.5

< 250 < 1500 0.5

31 to 35

34 to 38

37 to 41

40 to 46

44 to 50

48 to 54

52 to 60

58 to 66

2.5

64 to 72

70 to 79

t /T

100ms, tighter tolerances available on

of V

at T = 150 C

BZT55F... ± 3% of V

Znom Znom

request: BZT55A... ± 1% of V

BZT55B... ± 2%

Znom

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2 (6)

Document Number 85509

Rev. 4, 12-Mar-01

BZT55C...

Vishay Telefunken

Characteristics (T_j= 25 C unless otherwise specified)

600

500

400

300

200

100

I =5mA

–5

200

120

160

95 9602

amb

– Ambient Temperature ( °C )

95 9600

V – Z-Voltage ( V )

Figure 1. Total Power Dissipation vs.

Ambient Temperature

Figure 4. Temperature Coefficient of Vz vs. Z–Voltage

1000

100

200

T =25°C

150

V =2V

T =25°C

100

I =5mA

V – Z-Voltage ( V )

95 9598

V – Z-Voltage ( V )

95 9601

Figure 2. Typical Change of Working Voltage under

Figure 5. Diode Capacitance vs. Z–Voltage

Operating Conditions at T =25 C

amb

1.3

1.2

1.1

100

=V /V (25°C)

Zt Z

Ztn

–4

TK =10 10 /K

–4

10 /K

T =25°C

–4

10 /K

–4

10 /K

–4

10 /K

1.0

0.9

0.8

0.1

0.01

–4

–2 10 /K

–4

–4 10 /K

0.001

240

1.0

–60

120

180

0.2

0.4

0.6

0.8

95 9599

T – Junction Temperature ( °C )

95 9605

V – Forward Voltage ( V )

Figure 3. Typical Change of Working Voltage vs.

Junction Temperature

Figure 6. Forward Current vs. Forward Voltage

Document Number 85601

Rev. 4, 12-Mar-01

www.vishay.com

3 (6)

BZT55C...

Vishay Telefunken

100

1000

100

I =1mA

=500mW

tot

=25°C

amb

5mA

10mA

T =25°C

95 9604

– Z-Voltage ( V )

95 9606

V – Z-Voltage ( V )

Figure 7. Z–Current vs. Z–Voltage

Figure 9. Differential Z–Resistance vs. Z–Voltage

=500mW

tot

=25°C

amb

V – Z-Voltage ( V )

95 9607

Figure 8. Z–Current vs. Z–Voltage

1000

100

t /T=0.5

t /T=0.2

Single Pulse

T=T

=300K/W

–T

jmax amb

thJA

t /T=0.01

t /T=0.1

t /T=0.02

1/2

t /T=0.05

=(–V +(V +4r

T/Z

)

)/(2r )

thp

–1

t – Pulse Length ( ms )

95 9603

Figure 10. Thermal Response

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4 (6)

Document Number 85509

Rev. 4, 12-Mar-01

BZT55C...

Vishay Telefunken

Dimensions in mm

96 12071

Document Number 85601

Rev. 4, 12-Mar-01

www.vishay.com

5 (6)

BZT55C...

Vishay Telefunken

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and operating

systems with respect to their impact on the health and safety of our employees and the public, as well as their

impact on the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as

ozone depleting substances (ODSs).

The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and

forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban

on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of

ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively

2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental

Protection Agency (EPA) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting

substances and do not contain such substances.

We reserve the right to make changes to improve technical design and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each customer application

by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the

buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or

indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423

www.vishay.com

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Document Number 85509

Rev. 4, 12-Mar-01

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