BZT55B56-GS08 [VISHAY]
Zener Diode, 56V V(Z), 2%, 0.5W,;
| 型号： | BZT55B56-GS08 |
| 厂家： | 
VISHAY |
| 描述： | Zener Diode, 56V V(Z), 2%, 0.5W, 测试 二极管 |
| 文件： | 总6页 (文件大小：69K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BZT55B...
Vishay Semiconductors
Silicon Epitaxial Planar Z–Diodes
Features
D Very sharp reverse characteristic
D Low reverse current level
D Available with tighter tolerances
D Very high stability
D Low noise
D V –tolerance ± 2%
Z
96 12009
Applications
D Voltage stabilization
Order Instruction
Type
Ordering Code
Remarks
BZT55B2V4
BZT55B2V4–GS08
Tape and Reel
Absolute Maximum Ratings
Tj = 25°C
Parameter
Test Conditions
Type
Symbol
Value
500
Unit
mW
mA
°C
Power dissipation
Z–current
R
thJA
x300K/W
P
V
I
P /V
V
Z
Z
Junction temperature
Storage temperature range
Junction ambient
T
175
j
T
stg
–65...+175
500
°C
on PC board
R
thJA
K/W
50 mm x 50 mm x 1.6 mm
Electrical Characteristics
Tj = 25°C
Parameter
Test Conditions
I =200mA
Symbol
Min.
Typ.
Max.
1.5
Unit
V
Forward voltage
V
F
F
Document Number 85637
Rev. 1, 22–May–02
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1 (6)
BZT55B...
Vishay Semiconductors
Type
TZMB...
2V4
2V7
3V0
3V3
3V6
3V9
4V3
4V7
5V1
5V6
6V2
6V8
7V5
8V2
9V1
10
V
I
for V and r
r
at I
I and I at V
TK
VZ
Znom
ZT
ZT
zjT
zjk
ZK
R
R
R
2)
V
mA
5
V
Ω
Ω
mA
µA
µA
V
%/K
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
2.35 to 2.45
2.64 to 2.76
2.94 to 3.06
3.24 to 3.36
3.52 to 3.68
3.82 to 3.98
4.22 to 4.38
4.60 to 4.80
5.00 to 5.20
5.48 to 5.72
6.08 to 6.32
6.66 to 6.94
7.35 to 7.65
8.04 to 8.36
8.92 to 9.28
< 85
< 85
< 90
< 90
< 90
< 90
< 90
< 80
< 60
< 40
< 10
< 8
< 600
< 600
< 600
< 600
< 600
< 600
< 600
< 600
< 550
< 450
< 200
< 150
< 50
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
< 50 < 100
< 10 < 50
1
1
–0.09 to –0.06
–0.09 to –0.06
–0.08 to –0.05
–0.08 to –0.05
–0.08 to –0.05
–0.08 to –0.05
–0.06 to –0.03
–0.05 to +0.02
–0.02 to +0.02
–0.05 to +0.05
0.03 to 0.06
0.03 to 0.07
0.03 to 0.07
0.03 to 0.08
0.03 to 0.09
0.03 to 0.1
5
5
< 4
< 2
< 2
< 2
< 1
< 40
< 40
< 40
< 40
< 20
1
5
1
5
1
5
1
5
1
5
< 0.5 < 10
1
5
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 2
< 2
< 2
< 2
< 2
< 2
< 2
< 2
< 2
< 2
< 2
< 2
< 2
< 2
< 2
< 2
< 2
< 2
< 2
< 2
< 2
< 5
< 5
< 5
1
5
1
5
2
5
3
5
< 7
5
5
< 7
< 50
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
5
< 10
< 50
5
9.80 to 10.20 < 15
10.78 to 11.22 < 20
11.76 to 12.24 < 20
12.74 to 13.26 < 26
14.70 to 15.30 < 30
15.70 to 16.30 < 40
17.64 to 18.36 < 50
19.60 to 20.40 < 55
21.55 to 22.45 < 55
< 70
11
5
< 70
0.03 to 0.11
0.03 to 0.11
0.03 to 0.11
0.03 to 0.11
0.03 to 0.11
0.03 to 0.11
0.03 to 0.11
0.04 to 0.12
0.04 to 0,12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
12
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
5
< 90
13
5
< 110
< 110
< 170
< 170
< 220
< 220
< 220
< 220
< 220
< 220
< 220
< 500
< 600
15
5
16
5
18
5
20
5
22
5
24
5
23.5 to 24.5
26.4 to 27.6
29.4 to 30.6
32.4 to 33.6
35.3 to 36.7
38.2 to 39.8
42.1 to 43.9
46.1 to 47.9
< 80
< 80
< 80
< 80
< 80
< 90
< 90
27
5
30
5
33
5
36
5
39
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
43
0.5 < 0.1
0.5 < 0.1
47
< 110 < 700
51
50.0 to 52.0 < 125 < 700
0.5 < 0.1 < 10
56
54.9 to 57.1 < 135 < 1000 0.5 < 0.1 < 10
60.8 to 63.2 < 150 < 1000 0.5 < 0.1 < 10
66.6 to 69.4 < 200 < 1000 0.5 < 0.1 < 10
73.5 to 76.5 < 250 < 1500 0.5 < 0.1 < 10
62
68
75
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2 (6)
Document Number 85637
Rev. 1, 22–May–02
BZT55B...
Vishay Semiconductors
Characteristics (Tj = 25_C, unless otherwise specified)
600
15
500
10
400
300
200
5
I =5mA
Z
0
100
0
–5
200
50
0
40
80
120
160
0
10
20
30
40
T
amb
– Ambient Temperature ( °C )
V – Z-Voltage ( V )
Z
95 9602
95 9600
Figure 1. Total Power Dissipation vs.
Ambient Temperature
Figure 4. Temperature Coefficient of Vz vs. Z–Voltage
1000
100
10
200
T =25°C
j
150
V =2V
R
T =25°C
j
100
I =5mA
Z
50
0
1
25
25
0
5
10
15
20
0
5
10
15
20
V
Z
– Z-Voltage ( V )
95 9598
V
Z
– Z-Voltage ( V )
95 9601
Figure 2. Typical Change of Working Voltage under
Figure 5. Diode Capacitance vs. Z–Voltage
Operating Conditions at T =25°C
amb
100
10
1.3
1.2
1.1
V
Ztn
=V /V (25°C)
Zt Z
–4
TK =10 10 /K
VZ
–4
8 10 /K
T =25°C
j
–4
6 10 /K
1
–4
4 10 /K
–4
2 10 /K
0
0.1
1.0
0.9
0.8
–4
–2 10 /K
–4
–4 10 /K
0.01
0.001
1.0
240
0
0.2
0.4
0.6
0.8
–60
0
60
120
180
V – Forward Voltage ( V )
F
T – Junction Temperature ( °C )
j
95 9605
95 9599
Figure 3. Typical Change of Working Voltage vs.
Junction Temperature
Figure 6. Forward Current vs. Forward Voltage
Document Number 85637
Rev. 1, 22–May–02
www.vishay.com
3 (6)
BZT55B...
Vishay Semiconductors
100
80
1000
100
10
I =1mA
Z
P
T
=500mW
tot
=25°C
amb
60
5mA
40
20
0
10mA
T =25°C
j
1
20
25
0
4
8
12
16
0
5
10
15
20
V
Z
– Z-Voltage ( V )
V – Z-Voltage ( V )
Z
95 9604
95 9606
Figure 7. Z–Current vs. Z–Voltage
Figure 9. Differential Z–Resistance vs. Z–Voltage
50
40
30
P
T
=500mW
tot
=25°C
amb
20
10
0
35
15
20
25
30
V
Z
– Z-Voltage ( V )
95 9607
Figure 8. Z–Current vs. Z–Voltage
1000
100
10
t /T=0.5
p
t /T=0.2
p
Single Pulse
R
DT=T
=300K/W
–T
jmax amb
thJA
t /T=0.01
p
t /T=0.1
p
t /T=0.02
p
2
1/2
t /T=0.05
p
i
=(–V +(V +4r ꢀDT/Z
)
)/(2r )
zj
ZM
Z
Z
zj
thp
1
10
–1
0
1
2
10
10
t – Pulse Length ( ms )
10
95 9603
p
Figure 10. Thermal Response
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4 (6)
Document Number 85637
Rev. 1, 22–May–02
BZT55B...
Vishay Semiconductors
Dimensions in mm
96 12071
Document Number 85637
Rev. 1, 22–May–02
www.vishay.com
5 (6)
BZT55B...
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone
depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their
use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs
listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances
and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.com
6 (6)
Document Number 85637
Rev. 1, 22–May–02
相关型号：
BZT55B5V1GS18
Zener Diode, 5.1V V(Z), 2%, 0.5W, Silicon, Unidirectional, SOD-80, QUADROMELF-2
VISHAY
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