BZX85C68 [VISHAY]
Silicon Epitaxial Planar Z-Diodes; 硅外延平面的Z-二极管
| 型号： | BZX85C68 |
| 厂家： | 
VISHAY |
| 描述： | Silicon Epitaxial Planar Z-Diodes |
| 文件： | 总6页 (文件大小：50K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BZX85C...
Vishay Telefunken
Silicon Epitaxial Planar Z–Diodes
Features
Sharp edge in reverse characteristics
Low reverse current
Low noise
Very high stability
Available with tighter tolerances
Applications
94 9369
Voltage stabilization
Absolute Maximum Ratings
T = 25 C
j
Parameter
Power dissipation
Test Conditions
l=4mm, T =25 C
Type
Symbol
Value
1.3
Unit
W
P
V
L
Junction temperature
Storage temperature range
T
T
stg
175
–65...+175
C
C
j
Maximum Thermal Resistance
T = 25 C
j
Parameter
Junction ambient
Test Conditions
Symbol
R
thJA
Value
110
Unit
K/W
l=4mm, T =constant
L
Electrical Characteristics
T = 25 C
j
Parameter
Test Conditions
Type
Symbol Min
Typ Max Unit
Forward voltage
I =200mA
F
V
F
1
V
www.vishay.de • FaxBack +1-408-970-5600
Document Number 85608
Rev. 3, 01-Apr-99
1 (5)
BZX85C...
Vishay Telefunken
Type
BZX85C...
2V7
3V0
3V3
3V6
3V9
4V3
4V7
5V1
5V6
6V2
6V8
7V5
8V2
9V1
10
V
I
for V
V
and
r
r
at
I
I
at
V
V
1
1
1
1
1
1
1
TK
VZ
%/K
Znom
ZT
ZT
1)
zjT
zjk
ZK
R
R
V
mA
80
80
80
60
60
50
45
45
45
35
35
35
25
25
25
mA
1
1
1
1
1
1
1
1
A
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
2.5 to 2.9
2.8 to 3.2
3.1 to 3.5
3.4 to 3.8
3.7 to 4.1
4.0 to 4.6
4.4 to 5.0
4.8 to 5.4
5.2 to 6.0
5.8 to 6.6
6.4 to 7.2
7.0 to 7.9
7.7 to 8.7
8.5 to 9.6
9.4 to 10.6
< 20
< 20
< 20
< 20
< 15
< 13
< 13
< 10
< 7
< 4
< 3.5
< 3
< 5
< 5
< 400
< 400
< 400
< 500
< 500
< 500
< 500
< 500
< 400
< 300
< 300
< 200
< 200
< 200
< 200
< 300
< 350
< 400
< 500
< 500
< 500
< 600
< 600
< 600
< 150
< 100
< 40
< 20
< 10
< 3
< 3
< 1
< 1
< 1
–0.08 to –0.05
–0.08 to –0.05
–0.08 to –0.05
–0.08 to –0.05
–0.07 to –0.02
–0.07 to –0.01
–0.03 to +0.04
–0.01 to +0.04
0 to +0.045
1.5
2
3
1
1
1
+0.01 to +0.055
+0.015 to +0.06
< 1
< 1
< 1
< 1
4
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
4.5 +0.02 to +0.065
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
0.03 to 0.07
0.035 to 0.075
0.04 to 0.08
0.045 to 0.08
0.045 to 0.085
0.05 to 0.085
0.055 to 0.09
0.055 to 0.09
0.06 to 0.09
< 7
< 8
< 9
< 0.5
< 0.5
< 0.5
< 0.5
< 0.5
< 0.5
< 0.5
< 0.5
< 0.5
< 0.5
< 0.5
< 0.5
< 0.5
< 0.5
< 0.5
< 0.5
< 0.5
< 0.5
< 0.5
< 0.5
< 0.5
< 0.5
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
20 10.4 to 11.6
20 11.4 to 12.7
20 12.4 to 14.1
15 13.8 to 15.6
15 15.3 to 17.1
15 16.8 to 19.1
10 18.8 to 21.2
10 20.8 to 23.3
10 22.8 to 25.6
8
8
8
8
6
6
4
4
4
4
4
4
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
< 10
< 15
< 15
< 20
< 24
< 25
< 25
< 30
< 30
< 35
< 40
< 50
< 50
< 90
0.06 to 0.09
0.06 to 0.095
0.06 to 0.095
0.06 to 0.095
0.06 to 0.095
0.06 to 0.095
0.06 to 0.095
0.06 to 0.095
0.06 to 0.095
0.06 to 0.095
0.06 to 0.095
0.06 to 0.095
0.06 to 0.095
0.06 to 0.095
0.06 to 0.095
25.1 to 28.9
28 to 32
31 to 35
34 to 38
37 to 41
40 to 46
44 to 50
48 to 54
52 to 60
58 to 66
64 to 72
70 to 79
< 750 0.25
< 1000 0.25
< 1000 0.25
< 1000 0.25
< 1000 0.25
< 1000 0.25
< 1500 0.25
51
56
62
68
< 115 < 1500 0.25
< 120 < 2000 0.25
< 125 < 2000 0.25
< 130 < 2000 0.25
< 135 < 2000 0.25
75
1)
Tighter tolerances available on request:
BZX85B... ± 2% of V
Znom
www.vishay.de • FaxBack +1-408-970-5600
2 (5)
Document Number 85608
Rev. 3, 01-Apr-99
BZX85C...
Vishay Telefunken
Characteristics (Tj = 25 C unless otherwise specified)
2.0
1.6
1.2
1000
100
10
V =0V
R
l=4mm
V =2V
R
V =5V
R
V =20V
R
0.8
0.4
0
V =30V
R
l=10mm
150
l=20mm
50
f=1MHz
T
amb
=25°C
1
200
60
–50
0
100
0
10
20
30
40
50
95 9612
T
amb
– Ambient Temperature ( °C )
95 9616
V
– Z-Voltage ( V )
Z
Figure 3. Diode Capacitance vs. Z–Voltage
Figure 1. Total Power Dissipation vs. Ambient Tempera-
ture
1000
250
200
150
I =1mA
Z
2mA
5mA
100
10
1
10mA
20mA
l
l
100
50
0
T =constant
L
100
1
10
30
0
5
10
15
20
25
95 9615
V
– Z-Voltage ( V )
Z
95 9613
l – Lead Length ( mm )
Figure 4. Differential Z–Resistance vs. Z–Voltage
Figure 2. Thermal Resistance vs. Lead Length
1000
t /T=0.01
p
R
thJA
=110K/W
T=T –T
jmax amb
t /T=0.1
p
t /T=0.02
p
100
10
1
t /T=0.05
p
t /T=0.5
p
t /T=0.2
p
Single Pulse
2
1/2
i
=(–V +(V +4r
T/Z
)
)/(2r )
zj
ZM
Z
Z
zj
thp
–1
0
1
2
3
10
10
10
t – Pulse Length ( ms )
10
10
95 9614
p
Figure 5. Thermal Response
www.vishay.de • FaxBack +1-408-970-5600
Document Number 85608
Rev. 3, 01-Apr-99
3 (5)
BZX85C...
Vishay Telefunken
Dimensions in mm
Cathode Identification
94 9368
0.85 max.
technical drawings
according to DIN
specifications
2.5 max.
Standard Glass Case
54 B 2 DIN 41880
JEDEC DO 41
Weight max. 0.3g
26 min.
4.1 max.
26 min.
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4 (5)
Document Number 85608
Rev. 3, 01-Apr-99
BZX85C...
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.de • FaxBack +1-408-970-5600
Document Number 85608
Rev. 3, 01-Apr-99
5 (5)
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