CNY117 [VISHAY]
Optocoupler, Phototransistor Output, With Base Connection, 110 Degrees Celcious Rated; 光电耦合器，光电晶体管输出，带底座的连接， 110度Celcious评级
| 型号： | CNY117 |
| 厂家： | 
VISHAY |
| 描述： | Optocoupler, Phototransistor Output, With Base Connection, 110 Degrees Celcious Rated |
| 文件： | 总9页 (文件大小：166K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CNY117
Vishay Semiconductors
Optocoupler, Phototransistor Output, With Base Connection,
110 °C Rated
Features
• Operating temperature from - 55 °C to + 110 °C
• Breakdown Voltage, 5300 V
• Long Term Stability
• Industry Standard Dual-in-Line Package
• Lead-free component
RMS
1
6
A
C
B
C
E
5
4
2
3
NC
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Pb
e3
i179004
Pb-free
The coupling device is suitable for signal transmission
between two electrically separated circuits. The
potential difference between the circuits to be coupled
is not allowed to exceed the maximum permissible
reference voltages.
Agency Approvals
• UL1577, File No. E52744 System Code H or J,
Double Protection
• DIN EN 60747-5-2 (VDE0884)
• CUL - File No. E52744, equivalent to CSA bulletin
5A
Order Information
Part
Remarks
Applications
AC adapter
SMPS
CNY117-1
CNY117-2
CNY117-3
CNY117-4
CTR 40 - 80 %, DIP-6
CTR 63 - 125 %, DIP-6
CTR 100 - 200 %, DIP-6
CTR 160 - 320 %, DIP-6
PLC
Factory Automation
Game Consoles
For additional information on the available options refer to
Option Information.
Description
The CNY117 is a 110 °C rated optocoupler consisting
of a Gallium Arsenide infrared emitting diode optically
coupled to a silicon planar phototransistor detector in
a plastic plug-in DIP-6 package.
Document Number 83876
Rev. 1.4, 10-Jan-05
www.vishay.com
1
CNY117
Vishay Semiconductors
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter
Test condition
Symbol
VR
Value
6.0
Unit
V
Reverse voltage
DC Forward current
Surge forward current
Power dissipation
IF
60
2.5
100
1.0
mA
A
t ≤ 10 µs
IFSM
Pdiss
mW
Derate linearly from 25 °C
mW/°C
Output
Parameter
Test condition
Symbol
BVCEO
Value
70
Unit
V
Collector-emitter breakdown
voltage
Collector current
IC
IC
50
mA
mA
t ≤ 1.0 ms
100
150
1.5
Total power dissipation
Pdiss
mW
Derate linearly from 25 °C
mW/°C
Coupler
Parameter
Test condition
Symbol
VISO
Value
5300
Unit
Isolation test voltage (between
emitter and detector referred to
standard climate 23/50 DIN
50014)
VRMS
Creepage
Clearance
≥ 7.0
≥ 7.0
≥ 0.4
mm
mm
mm
Isolation thickness between
emitter and detector
Comparative tracking index per
DIN IEC 112/VDE 0303, part 1
175
≥ 1011
Isolation resistance
VIO = 500 V
RIO
Tstg
Tamb
Tsld
Ω
Storage temperature range
Ambient temperature range
Soldering temperature
- 55 to + 150
°C
°C
°C
- 55 to + 110
260
max. 10 s, dip soldering:
distance to seating plane
≥ 1.5 mm
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2
Document Number 83876
Rev. 1.4, 10-Jan-05
CNY117
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter
Test condition
IF = 60 mA
R = 10 µA
Symbol
VF
Min
6.0
Typ.
1.25
Max
1.65
Unit
V
Forward voltage
Breakdown voltage
Reserve current
Capacitance
I
VBR
IR
V
V
V
R = 6.0 V
0.01
25
10
µA
pF
R = 0 V, f = 1.0 MHz
CO
Output
Parameter
Test condition
Symbol
CCE
Min
Typ.
5.2
Max
Unit
pF
Collector-emitter capacitance
VCE = 5.0 V, f = 1.0 MHz
Base - collector capacitance
Emitter - base capacitance
V
V
CE = 5.0 V, f = 1.0 MHz
CE = 5.0 V, f = 1.0 MHz
CBC
CEB
6.5
7.5
pF
pF
Coupler
Parameter
Test condition
Part
Symbol
VCEsat
Min
Typ.
0.25
Max
0.4
Unit
Saturation voltage, collector-
emitter
IF = 10 mA, IC = 2.5 mA
V
Coupling capacitance
CC
0.6
2.0
pF
nA
Collector-emitter leakage
current
V
CE = 10 V
CNY117-1
ICEO
50
CNY117-2
CNY117-3
CNY117-4
ICEO
ICEO
ICEO
2.0
5.0
5.0
50
nA
nA
nA
100
100
Current Transfer Ratio
Current Transfer Ratio IC/IF at VCE = 5.0 V, 25 °C and Collector-Emitter Leakage Current by dash number
Parameter
Test condition
IF = 10 mA
Part
Symbol
CTR
Min
40
Typ.
30
Max
80
Unit
%
Current Transfer Ratio
CNY117-1
CNY117-2
CNY117-3
CNY117-4
CNY117-1
CTR
CTR
CTR
CTR
63
100
160
13
125
200
320
%
%
%
%
IF = 1.0 mA
CNY117-2
CNY117-3
CNY117-4
CTR
CTR
CTR
22
34
56
45
70
90
%
%
%
Document Number 83876
Rev. 1.4, 10-Jan-05
www.vishay.com
3
CNY117
Vishay Semiconductors
Switching Characteristics
Linear operation (without saturation)
Parameter
Test condition
Symbol
ton
Min
Typ.
3.0
Max
Unit
Turn-on time
IF = 10 mA, VCC = 5.0 V,
RL = 75 W
µs
Rise time
IF = 10 mA, VCC = 5.0 V,
RL = 75 W
tr
toff
tf
2.0
2.3
2.0
250
µs
µs
Turn-off time
Fall time
IF = 10 mA, VCC = 5.0 V,
RL = 75 W
IF = 10 mA, VCC = 5.0 V,
RL = 75 W
µs
Cut-off frequency
IF = 10 mA, VCC = 5.0 V,
RL = 75 W
fCO
kHz
Switching operation (with saturation)
Parameter
Test condition
IF = 20 mA
IF = 10 mA
Part
Symbol
ton
Min
Typ.
3.0
Max
Unit
Turn-on time
CNY117-1
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
CNY117-2
CNY117-3
CNY117-4
CNY117-1
CNY117-2
CNY117-3
CNY117-4
CNY117-1
CNY117-2
CNY117-3
CNY117-4
CNY117-1
CNY117-2
CNY117-3
CNY117-4
ton
ton
ton
tr
4.2
4.2
6.0
2.0
3.0
3.0
4.6
18
IF = 5.0 mA
IF = 20 mA
IF = 10 mA
Rise time
tr
tr
IF = 5.0 mA
IF = 20 mA
IF = 10 mA
tr
Turn-off time
Fall time
toff
toff
toff
toff
tf
23
23
IF = 5.0 mA
IF = 20 mA
IF = 10 mA
25
11
tf
14
tf
14
IF = 5.0 mA
tf
15
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
175
1.5
150
125
100
75
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
–55qC
0qC
Detector
LED
20
25qC
50
50qC
25
110qC
0
0
40
60
80
100 120
0.10
1.00
I – Forward Current ( mA )
F
10.00
100.00
T
– Ambient Temperature ( qC )
18777
amb
17577
Figure 1. Permissible Power Dissipation vs. Ambient Temperature
Figure 2. Forward Voltage vs. Forward Current
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4
Document Number 83876
Rev. 1.4, 10-Jan-05
CNY117
Vishay Semiconductors
1.2
1.0
0.8
0.6
0.4
0.2
0.0
50
45
40
35
30
25
20
15
10
5
I
= 10 mA
F
I
= 30 mA
F
5 mA
I
= 20 mA
F
1 mA
I
= 15 mA
F
I
= 10 mA
F
Normalized to
= 10 mA, T
I
= 5 mA
= 1 mA
F
I
V
= 25_C,
F
CE
amb
= 0.4 V, saturated
I
F
0
–55 –35 –15
5
25 45 65 85 105 125
0
1
2
3
4
5
6
7
8
9 101112131415
17578
T
amb
– Ambient Temperature ( qC )
18733
VCE – Collector Emitter Voltage (V)
Figure 3. Collector Current vs. Collector Emitter Voltage
Figure 6. Normalized Current Transfer Ratio vs. Ambient
Temperature
1.2
10000
I
F
= 10 mA
1.0
0.8
0.6
0.4
0.2
0.0
40 V
1000
5 mA
100
24 V
1 mA
12 V
10
Normalized to
= 10 mA, T
1
I
V
= 25_C,
= 5 V, non–saturated
F
CE
amb
0.10
–75
–25
25
75
125
–55 –35 –15
5
25 45 65 85 105 125
T
amb
– Ambient Temperature ( °C )
18734
17579
T
amb
– Ambient Temperature ( qC )
Figure 4. Collector to Emitter Dark Current vs. Ambient
Temperature
Figure 7. Normalized Current Transfer Ratio vs. Ambient
Temperature
1.2
30
–2
–1
1.0
25 mA
0.8
20
–3
0.6
0.4
0.2
0.0
–4
10 mA
10
Normalized to
= 10 mA, T
5 mA
I
F
= 25_C,
amb
2 mA
1 mA
V
CE
= 5 V, non–saturated
0
0.10
1.00
10.00 100.00
0.0
0.1
V
0.2
0.3
0.4
0.5
0.6
17580
I – Forward Current ( mA )
F
18735
– Collector to Emitter Voltage (V)
CE
Figure 5. Normalized Current vs. Collector Emitter Saturation
Voltage
Figure 8. Normalized CTR vs. Forward Current
Document Number 83876
Rev. 1.4, 10-Jan-05
www.vishay.com
5
CNY117
Vishay Semiconductors
1.2
1.0
0.8
1000
100
10
Pulse Width = 100 ms
= 10 mA
–1
–2
I
F
Duty Cycle = 50 %
0.6
–3
t
rise
0.4
–4
t
Normalized to
0.2
fall
I
F
= 10 mA, T
= 25_C,
amb
V = 0.4 V, saturated
CE
0.0
0.10
1
1.00
10.00
100.00
0.1
1
10
100
17584
I – Forward Current ( mA )
F
18781
R
L
– Load Resistance (kΩ)
Figure 9. Normalized CTR vs. Forward Current
Figure 12. Time Switching vs. Load Resistance
1000.00
10
t
on
@ I = 10 mA
F
9
0qC
CNY–1,–2
CNY–3,–4
8
25qC
100.00
10.00
1.00
7
t
off
@ I = 10 mA
F
50qC
6
5
4
Pulse Width = 100 ms
0qC
I
= 10 mA
L
F
T
V
= 25_C,
amb
25qC
R
= 1000 Ω
3
2
1
= 5 V,
CE
Duty Cycle = 50 %
50qC
non–saturated
0.10
1.00
10.00 100.00
10
100
1000 10000
17583
I – Collector Current ( mA )
C
18782
Log R – Base Emitter Resistance (Ω)
BE
Figure 10. Cut-off Frequency vs. Collector Current
Figure 13. Switching Time vs. Base Emitter Resistance
16
14
1000
Pulse Width = 100 ms
I
= 10 mA
F
Duty Cycle = 50 %
t
off
12
10
8
100
10
1
t
off
6
t
on
4
2
0
t
on
RBE = 500 k, VCE= 5 V,
amb= + 25 C°
T
0
5
10
15
20
0.1
1
10
100
18780
R
– Load Resistance (kΩ)
L
19274
IF [mA]
Figure 11. Time Switching vs. Load Resistance
Figure 14. Switching Time vs. IF
www.vishay.com
6
Document Number 83876
Rev. 1.4, 10-Jan-05
CNY117
Vishay Semiconductors
1.2
1.1
1.0
0.9
0.8
0.7
110qC
50qC
25qC
0qC
–55qC
Normalized to
= 20 PA, T
I
V
= 25_C,
B
CE
amb
= 5 V, non–saturated
0.10
1.00
I – Base Current ( mA )
B
10.00
100.00
17581
Figure 15. Normalized HFE vs. Base Current
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
110qC
50qC
25qC
0qC
–55qC
Normalized to
= 20 PA, T
CE
I
V
= 25_C,
= 0.4 V, saturated
B
amb
0.01
0.10
1.00
I – Base Current ( mA )
B
10.00
100.00
17582
Figure 16. Normalized HFE vs. Base Current
10
1
0 °C
0.1
0.01
25 °C
Normalized to I = 10 mA,
F
Temp = 25°C and
0.001
V
= 5 V
CE
0.0001
50 °C
0.00001
75 °C
0.1
0.000001
0.01
1
10
100
18786
I
F
– Forward Current (mA)
Figure 17. Normalized Photocurrent vs. Forward current
Document Number 83876
Rev. 1.4, 10-Jan-05
www.vishay.com
7
CNY117
Vishay Semiconductors
Package Dimensions in Inches (mm)
pin one ID
2
1
3
.248 (6.30)
.256 (6.50)
ISO Method A
4
5
6
.335 (8.50)
.343 (8.70)
.300 (7.62)
typ.
.048 (0.45)
.022 (0.55)
.039
(1.00)
Min.
.130 (3.30)
.150 (3.81)
18°
4°
.114 (2.90)
.130 (3.0)
typ.
.031 (0.80) min.
3°–9°
.010 (.25)
typ.
.031 (0.80)
.035 (0.90)
.018 (0.45)
.022 (0.55)
.300–.347
(7.62–8.81)
.100 (2.54) typ.
i178004
www.vishay.com
8
Document Number 83876
Rev. 1.4, 10-Jan-05
CNY117
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 83876
Rev. 1.4, 10-Jan-05
www.vishay.com
9
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