DF02M/45 [VISHAY]

Bridge Rectifier Diode, 1A, 200V V(RRM),;


型号：	DF02M/45
厂家：	VISHAY
描述：	Bridge Rectifier Diode, 1A, 200V V(RRM), 二极管
文件：	总4页 (文件大小：83K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

DF005M, DF01M, DF02M, DF04M, DF06M, DF08M, DF10M

www.vishay.com

Vishay General Semiconductor

Miniature Glass Passivated Single-Phase Bridge Rectifiers

FEATURES

• UL recognition, file number E54214

• Ideal for printed circuit boards

• Applicable for automative insertion

• High surge current capability

• Solder dip 275 °C max. 10 s, per JESD 22-B106

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

General purpose use in AC/DC bridge full wave rectification

for SMPS, lighting ballaster, adapter, battery charger, home

appliances, office equipment, and telecommunication

applications.

Case Style DFM

PRIMARY CHARACTERISTICS

Package

DFM

1 A

MECHANICAL DATA

I_F(AV)

Case: DFM

50 V, 100 V, 200 V, 400 V, 600 V,

800 V, 1000 V

V_RRM

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS-compliant, commercial grade

I_FSM

I_R

50 A

5 μA

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 1A whisker test

V_Fat I_F= 1.0 A

T_Jmax.

1.1 V

150 °C

Quad

Polarity: As marked on body

Diode variations

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL DF005M DF01M DF02M DF04M DF06M DF08M DF10M UNIT

Device marking code

DF005

DF01

100

DF02

200

DF04

400

DF06

600

DF08

800

DF10

1000

700

Maximum repetitive peak reverse voltage

Maximum RMS voltage

V_RRM

V_RMS

V_DC

140

280

420

560

Maximum DC blocking voltage

100

200

400

600

800

1000

Maximum average forward output rectified current

at T_A= 40 °C

I_F(AV)

1.0

Peak forward surge current single sine-wave

superimposed on rated load

I_FSM

I²t

Rating for fusing (t < 8.3 ms)

A²s

°C

Operating junction and storage temperature range T_J, T_STG

- 55 to + 150

ELECTRICAL CHARACTERISTICS (T_A= 25 °C unless otherwise noted)

PARAMETER

TEST CONDITIONS SYMBOL DF005M DF01M DF02M DF04M DF06M DF08M DF10M UNIT

Maximum instantaneous

forward voltage drop per diode

1.0 A

V_F

I_R

1.1

Maximum reverse current at

rated DC blocking voltage per

diode

T_A= 25 °C

5.0

μA

T_A= 125 °C

500

Typical junction capacitance

per diode

4.0 V, 1 MHz

C_J

Revision: 16-Aug-13

Document Number: 88571

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

DF005M, DF01M, DF02M, DF04M, DF06M, DF08M, DF10M

www.vishay.com

Vishay General Semiconductor

THERMAL CHARACTERISTICS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL DF005M

DF01M

DF02M

DF04M

DF06M

DF08M

DF10M

UNIT

R_JA

R_JL

(1)

Typical thermal resistance

°C/W

Note

(1)

Thermal resistance from junction to ambient and from junction to lead mounted on PCB with 0.5" x 0.5" (13 mm x 13 mm) copper pads

ORDERING INFORMATION (Example)

PREFERRED P/N

UNIT WEIGHT (g)

PREFERRED PACKAGE CODE

BASE QUANTITY

DELIVERY MODE

DF06M-E3/45

0.416

Tube



RATINGS AND CHARACTERISTICS CURVES (T_A= 25 °C unless otherwise noted)

1.0

0.5

60 Hz

Resistive or

Inductive Load

T_J= 25 °C

Pulse Width = 300 µs

1 % Duty Cycle

0.1

P. C. B. M o unted on

0.51 x 0.51" (13 x 13 mm)

Copper Pads with 0.06"

(1.5 mm) Lead Length

0.01

0.4

0.6

0.8

100

120

140 150

1.0

1.2

1.4

Instantaneous Forward Voltage (V)

Ambient Temperature (°C)

Fig. 1 - Derating Curve Output Rectified Current

Fig. 3 - Typical Forward Characteristics Per Diode

100

T_J= 150 °C

Single Sine-Wave

T_J= 125 °C

0.1

T_J= 25 °C

1.0 Cycle

0.01

100

Number of Cycles at 60 Hz

Percent of Rated Peak Reverse Voltage (%)

Fig. 2 - Maximum Non-Repetitive Peak Forward Surge

Fig. 4 - Typical Reverse Leakage Characteristics Per Diode

Current Per Diode

Revision: 16-Aug-13

Document Number: 88571

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

DF005M, DF01M, DF02M, DF04M, DF06M, DF08M, DF10M

www.vishay.com

Vishay General Semiconductor

100

T_J= 25 °C

f = 1.0 MHz

V_sig= 50 mVp-p

0.1

0.01

100

0.1

t - Heating Time (s)

Reverse Voltage (V)

Fig. 5 - Typical Junction Capacitance Per Diode

Fig. 6 - Typical Transient Thermal Impedance



PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

Case Style DFM

0.255 (6.5)

0.245 (6.2)

0.315 (8.00)

0.285 (7.24)

0.335 (8.51)

0.320 (8.12)

0.080 (2.03)

0.050 (1.27)

0.130 (3.30)

0.120 (3.05)

0.045 (1.14)

0.035 (0.89)

0.013 (0.33)

0.0086 (0.22)

0.185 (4.69)

0.150 (3.81)

0.023 (0.58)

0.018 (0.46)

0.350 (8.9)

0.300 (7.6)

0.205 (5.2)

0.195 (5.0)

0.075 (1.90)

0.055 (1.39)

Revision: 16-Aug-13

Document Number: 88571

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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www.vishay.com

Vishay

Disclaimer



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Revision: 08-Feb-17

Document Number: 91000

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