DF06M/51 [VISHAY]

Bridge Rectifier Diode, 1 Phase, 1A, 600V V(RRM), Silicon, MINIATURE, PLASTIC, CASE DFM, 4 PIN;


型号：	DF06M/51
厂家：	VISHAY
描述：	Bridge Rectifier Diode, 1 Phase, 1A, 600V V(RRM), Silicon, MINIATURE, PLASTIC, CASE DFM, 4 PIN 光电二极管
文件：	总4页 (文件大小：91K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

DF005M thru DF10M

Vishay General Semiconductor

Miniature Glass Passivated Single-Phase Bridge Rectifiers

FEATURES

• UL recognition, file number E54214

• Ideal for printed circuit boards

• Applicable for automative insertion

• High surge current capability

• Solder dip 260 °C, 40 s

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

TYPICAL APPLICATIONS

Case Style DFM

General purpose use in ac-to-dc bridge full wave

rectification for SMPS, lighting ballaster, adapter,

battery charger, home appliances, office equipment,

and telecommunication applications.

PRIMARY CHARACTERISTICS

I_F(AV)

1 A

MECHANICAL DATA

Case: DFM

V_RRM

I_FSM

I_R

50 V to 1000 V

50 A

Epoxy meets UL 94V-0 flammability rating

5 µA

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD22-B102

V_F

1.1 V

T_Jmax.

150 °C

E3 suffix for consumer grade, meets JESD 201 class

1A whisker test

Polarity: As marked on body

MAXIMUM RATINGS (T = 25 °C unless otherwise noted)

PARAMETER

SYMBOL DF005M DF01M

DF02M

DF02

200

DF04M

DF04

400

DF06M

DF06

600

DF08M

DF08

800

DF10M

DF10

1000

700

UNIT

Device marking code

DF005

DF01

100

Maximum repetitive peak reverse voltage

Maximum RMS voltage

V_RRM

V_RMS

V_DC

140

280

420

560

Maximum DC blocking voltage

100

200

400

600

800

1000

Maximum average forward output rectified

current at T_A= 40 °C

I_F(AV)

1.0

Peak forward surge current single

sine-wave superimposed on rated load

I_FSM

I²t

Rating for fusing (t < 8.3 ms)

A²s

°C

Operating junction and storage

temperature range

T_J, T_STG

- 55 to + 150

Document Number: 88571

Revision: 14-Jan-08

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

www.vishay.com

DF005M thru DF10M

Vishay General Semiconductor

ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted)

PARAMETER

TEST CONDITIONS SYMBOL DF005M DF01M DF02M DF04M DF06M DF08M DF10M UNIT

Maximum

instantaneous forward

voltage drop per diode

1.0 A

V_F

1.1

Maximum

reverse current at

rated DC blocking

voltage per diode

_A= 25 °C

_A= 125 °C

5.0

500

I_R

µA

Typical junction

capacitance per diode

4.0 V, 1 MHz

C_J

THERMAL CHARACTERISTICS (T = 25 °C unless otherwise noted)

PARAMETER

SYMBOL DF005M DF01M DF02M DF04M DF06M DF08M DF10M UNIT

R_θJA

R_θJL

Typical thermal resistance ⁽¹⁾

°C/W

Note:

(1) Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.5 x 0.5" (13 x 13 mm) copper pads

ORDERING INFORMATION (Example)

PREFERRED P/N

UNIT WEIGHT (g)

PREFERRED PACKAGE CODE

BASE QUANTITY

DELIVERY MODE

DF06M-E3/45

0.416

Tube

RATINGS AND CHARACTERISTICS CURVES

(T = 25 °C unless otherwise noted)

1.0

60 Hz

Resistive or

Inductive Load

T_J= 150 °C

Single Sine-Wave

0.5

P. C. B. M o unted on

0.51 x 0.51" (13 x 13 mm)

Copper Pads with 0.06"

(1.5 mm) Lead Length

1.0 Cycle

100

120

140 150

100

Ambient Temperature (°C)

Number of Cycles at 60 Hz

Figure 1. Derating Curve Output Rectified Current

Figure 2. Maximum Non-Repetitive Peak Forward Surge

Current Per Diode

www.vishay.com

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

Document Number: 88571

Revision: 14-Jan-08

DF005M thru DF10M

Vishay General Semiconductor

100

T_J= 25 °C

f = 1.0 MHz

V_sig= 50 mVp-p

T_J= 25 °C

Pulse Width = 300 µs

1 % Duty Cycle

0.1

0.01

0.4

0.6

0.8

1.0

1.2

1.4

100

Instantaneous Forward Voltage (V)

Reverse Voltage (V)

Figure 3. Typical Forward Characteristics Per Diode

Figure 5. Typical Junction Capacitance Per Diode

100

T_J= 125 °C

0.1

T_J= 25 °C

0.01

0.1

0.01

100

0.1

t - Heating Time (s)

Percent of Rated Peak Reverse Voltage (%)

Figure 4. Typical Reverse Leakage Characteristics Per Diode

Figure 6. Typical Transient Thermal Impedance

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

Case Style DFM

0.255 (6.5)

0.245 (6.2)

0.315 (8.00)

0.285 (7.24)

0.335 (8.51)

0.320 (8.12)

0.080 (2.03)

0.050 (1.27)

0.130 (3.30)

0.120 (3.05)

0.045 (1.14)

0.035 (0.89)

0.013 (0.33)

0.0086 (0.22)

0.185 (4.69)

0.150 (3.81)

0.023 (0.58)

0.018 (0.46)

0.350 (8.9)

0.300 (7.6)

0.205 (5.2)

0.195 (5.0)

0.075 (1.90)

0.055 (1.39)

Document Number: 88571

Revision: 14-Jan-08

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

www.vishay.com

Legal Disclaimer Notice

Vishay

Notice

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,

or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, by

estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's

terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express

or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness

for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.

Customers using or selling these products for use in such applications do so at their own risk and agree to fully

indemnify Vishay for any damages resulting from such improper use or sale.

Document Number: 91000

Revision: 08-Apr-05

www.vishay.com

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