DG2016DQ [VISHAY]
High-Bandwidth, Low Voltage, Dual SPDT Analog Switch; 高带宽，低电压，双路SPDT模拟开关
| 型号： | DG2016DQ |
| 厂家： | 
VISHAY |
| 描述： | High-Bandwidth, Low Voltage, Dual SPDT Analog Switch |
| 文件： | 总6页 (文件大小：59K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DG2016
Vishay Siliconix
New Product
High-Bandwidth, Low Voltage, Dual SPDT Analog Switch
FEATURES
BENEFITS
APPLICATIONS
D Single Supply (1.8 V to 5.5 V)
D Low On-Resistance - rON: 2.4 W
D Reduced Power Consumption
D High Accuracy
D Cellular Phones
D Speaker Headset Switching
D Audio and Video Signal Routing
D PCMCIA Cards
D Crosstalk and Off Isolation: -81 dB @
D Reduce Board Space
D Low-Voltage Logic Compatible
D High Bandwidth
1 MHz
D MSOP-10 Package
D Low-Voltage Data Acquisition
D ATE
DESCRIPTION
The
DG2016
is
a
monolithic
CMOS
dual
power supply level when off. Break-before-make is
guaranteed.
single-pole/double-throw (SPDT) analog switch. It is
specifically designed for low-voltage, high bandwidth
applications.
With fast switching speeds, low on-resistance, high
bandwidth, and low charge injection, the DG2016 is ideally
suited for audio and video switching with high linearity.
The DG2016’s on-resistance (3 W @ 2.7 V), matching and
flatness are guaranteed over the entire analog voltage range.
Wide dynamic performance is achieved with better than
–80 dB for both cross-talk and off-isolation at 1 MHz.
Built on Vishay Siliconix’s low voltage CMOS technology, the
DG2016 contains an epitaxial layer which prevents latch-up.
Both SPDT’s operate with independent control logic, conduct
equally well in both directions and block signals up to the
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
MSOP-10
TRUTH TABLE
IN1
NO1
GND
NO2
IN2
COM1
NC1
1
2
3
4
5
10
9
Logic
NC1 and NC2
NO1 and NO2
0
1
ON
OFF
ON
V+
8
OFF
NC2
7
COM2
6
ORDERING INFORMATION
Temp Range
Package
Part Number
-40 to 85°C
MSOP-10
DG2016DQ
Top View
Document Number: 72030
S-22312—Rev. A, 20-Jan-03
www.vishay.com
1
DG2016
New Product
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
b
Reference to GND
Power Dissipation (Packages)
c
V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to +6 V
MSOP-10 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 320 mW
a
IN, COM, NC, NO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to (V+ + 0.3 V)
Notes:
Continuous Current (Any terminal) . . . . . . . . . . . . . . . . . . . . . . . . . . . "50 mA
Peak Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . "200 mA
(Pulsed at 1 ms, 10% duty cycle)
a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by inter-
nal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 4.0 mW/_C above 70_C
Storage Temperature (D Suffix) . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 150°C
SPECIFICATIONS (V+ = 3 V)
Limits
Test Conditions
-40 to 85_C
Otherwise Unless Specified
Minb
Typc
Maxb
Unit
e
Parameter
Analog Switch
Symbol
Tempa
V+ = 3 V, "10%, V = 0.4 or 2.0 V
IN
V
, V
,
NO NC
V
d
Analog Signal Range
Full
0
V+
V
COM
V+ = 2.7 V, V
= 0.2 V/1.5 V
Room
Full
3.0
4.8
5.3
COM
On-Resistance
r
ON
ON
I , I = 10 mA
NO NC
r
W
r
r
Flatness
Room
1.6
ON
ON
V+ = 2.7 V
= 0 to V+, I , I = 10 mA
Flatness
V
COM
NO NC
Match Between Channels
Dr
Room
0.2
ON
I
I
,
Room
Full
-0.25
-2.5
0.25
2.5
NO(off)
0.01
0.01
0.01
NC(off)
V+ = 3.3 V, V , V = 1 V/3 V
NO NC
f
Switch Off Leakage Current
V
COM
= 3 V/1 V
Room
Full
-0.25
-2.5
0.25
2.5
I
nA
COM(off)
Room
Full
-0.25
-2.5
0.25
2.5
f
Channel-On Leakage Current
I
V+ = 3.3 V, V , V = V
= 1 V/3 V
COM(on)
NO NC
COM
Digital Control
d
Input High Voltage
V
Full
Full
Full
Full
1.6
1
INH
V
Input Low Voltage
Input Capacitance
Input Current
V
0.4
1
INL
C
5
pF
in
IINL or IINH
V
IN
= 0 or V+
mA
Dynamic Characteristics
Room
Full
28
13
53
59
Turn-On Time
t
ON
V
V
or V = 2.0 V, R = 50 W, C = 35 pF
NC L L
NO
Room
Full
38
38
ns
Turn-Off Time
t
OFF
Break-Before-Make Time
t
d
or V = 2.0 V, R = 50 W, C = 35 pF
Full
1
NO
NC
L
L
d
Charge Injection
Q
C = 1 nF, V
= 0 V, R = 0 W
GEN
Room
Room
Room
Room
Room
Room
Room
38
-78
-82
15
pC
dB
INJ
L
GEN
d
Off-Isolation
OIRR
R
L
= 50 W, C = 5 pF, f = 1 MHz
L
d
Crosstalk
X
TALK
C
NO(off)
C
NC(off)
C
NO(on)
d
N , N Off Capacitance
O
C
15
V
IN
= 0 or V+, f = 1 MHz
pF
49
d
Channel-On Capacitance
C
NC(on)
45
Power Supply
Power Supply Current
I+
V
IN
= 0 or V+
Full
0.01
1.0
mA
Notes:
a. Room = 25°C, Full = as determined by the operating suffix.
b. Typical values are for design aid only, not guaranteed nor subject to production testing.
c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
d. Guarantee by design, nor subjected to production test.
e.
f.
V
= input voltage to perform proper function.
IN
Guaranteed by 5-V leakage testing, not production tested.
Document Number: 72030
www.vishay.com
S-22312—Rev. A, 20-Jan-03
2
DG2016
Vishay Siliconix
New Product
SPECIFICATIONS (V+ = 5 V)
Limits
Test Conditions
-40 to 85_C
Otherwise Unless Specified
Minb
Typc
Maxb
Unit
e
Parameter
Analog Switch
Symbol
Tempa
V+ = 5 V, "10%, V = 0.8 or 2.4 V
IN
V
, V
,
NO NC
V
d
Analog Signal Range
Full
0
V+
V
COM
Room
Full
2.4
4.0
4.3
On-Resistance
r
V+ = 4.5 V, V = 3 V, I , I = 10 mA
COM NO NC
ON
r
W
ON
r
r
Flatness
Room
Room
1.2
0.2
ON
ON
Flatness
V+ = 4.5 V, V
= 0 to V+, I , I = 10 mA
NO NC
COM
Match Between Channels
Dr
ON
I
I
,
Room
Full
-0.25
-2.5
0.25
2.5
NO(off)
0.01
0.01
0.01
NC(off)
V+ = 5.5 V
Switch Off Leakage Current
V
, V = 1 V/4.5 V, V
= 4.5 V/1 V
= 1 V/4.5 V
Room
Full
-0.25
-2.5
0.25
2.5
NO NC
COM
I
nA
COM(off)
Room
Full
-0.25
-2.5
0.25
2.5
Channel-On Leakage Current
I
V+ = 5.5 V, V , V = V
NO NC COM
COM(on)
Digital Control
d
Input High Voltage
V
Full
Full
Full
Full
2.0
1
INH
V
Input Low Voltage
Input Capacitance
Input Current
V
0.8
1
INL
C
5
pF
in
IINL or IINH
V
IN
= 0 or V+
mA
Dynamic Characteristics
Room
Full
23
8
48
52
Turn-On Time
t
ON
V
V
or V = 3 V, R = 50 W, C = 35 pF
NC L L
NO
Room
Full
33
35
ns
Turn-Off Time
t
OFF
Break-Before-Make Time
t
d
or V = 3 V, R = 50 W, C = 35 pF
Full
1
NO
NC
L
L
d
Charge Injection
Q
C = 1 nF, V
= 0 V, R = 0 W
GEN
Room
Room
Room
Room
Room
Room
Room
79
-81
-82
14
pC
dB
INJ
L
GEN
d
Off-Isolation
OIRR
R
L
= 50 W, C = 5 pF, f = 1 MHz
L
d
Crosstalk
X
TALK
C
NO(off)
C
NC(off)
C
NO(on)
d
Source-Off Capacitance
14
V
IN
= 0 or V+, f = 1 MHz
pF
48
d
Channel-On Capacitance
C
NC(on)
44
Power Supply
Power Supply Range
Power Supply Current
V+
I+
1.8
5.5
1.0
V
V
IN
= 0 or V+
Full
0.01
mA
Notes:
a. Room = 25°C, Full = as determined by the operating suffix.
b. Typical values are for design aid only, not guaranteed nor subject to production testing.
c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
d. Guarantee by design, nor subjected to production test.
e.
f.
V
= input voltage to perform proper function.
IN
Guaranteed by 5-V leakage testing, not production tested.
Document Number: 72030
www.vishay.com
S-22312—Rev. A, 20-Jan-03
3
DG2016
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
r
vs. V
and Supply Voltage
r vs. Analog Voltage and Temperature
ON
ON
COM
5
4
3
2
1
0
8
7
6
5
4
3
2
1
0
T = 25_C
I
S
= 10 mA
V+ = 3 V
85_C
25_C
-40_C
V+ = 3.0 V,
V+ = 5.0 V,
V+ = 5 V
85_C
25_C
-40_C
0
1
2
3
4
5
0
1
2
3
4
5
V
COM
- Analog Voltage (V)
V
COM
- Analog Voltage (V)
Supply Current vs. Temperature
Supply Current vs. Input Switching Frequency
10000
1000
10 mA
V+ = 5 V
1 mA
100 mA
10 mA
100
10
V+ = 5 V
V
IN
= 0 V
1 mA
V+ = 3 V
= 0 V
V
IN
100 nA
10 nA
1
-60
-40
-20
0
20
40
60
80
100
10
100
1 K
10 K
100 K
1 M
10 M
Temperature (_C)
Input Switching Frequency (Hz)
Leakage Current vs. Temperature
Leakage vs. Analog Voltage
10000
100
75
V+ = 5 V
V+ = 5 V
I
, II
NO(off) NC(off)
1000
100
10
50
I
25
COM(on)
I
COM(off)
I
I
COM(on)
COM(off)
0
I
, II
NO(off) NC(off)
-25
-50
-75
-100
1
-60
-40
-20
0
20
40
60
80
100
0
1
2
3
4
5
Temperature (_C)
V , V , V
COM NO NC
- Analog Voltage (V)
Document Number: 72030
www.vishay.com
S-22312—Rev. A, 20-Jan-03
4
DG2016
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Insertion Loss, Off-Isolation
Crosstalk vs. Frequency
Switching Time vs. Temperature
60
10
R
L
= 50 W
50
40
30
20
10
0
LOSS
-10
-30
-50
-70
-90
t
V+ = 3 V
ON
X
TALK
t
V+ = 5 V
ON
OIRR
t
V+ = 3 V
OFF
V+ = 5 V
= 50 W
R
L
t
V+ = 5 V
60
OFF
-60
-40
-20
0
20
40
80
100
100 K
1 M
10 M
Frequency (Hz)
100 M
1 G
Temperature (_C)
Switching Threshold vs. Supply Voltage
Charge Injection vs. Analog Voltage
3.0
2.5
2.0
1.5
1.0
0.5
0.0
80
60
40
20
V+ = 5 V
0
-20
-40
-60
-80
V+ = 3 V
0
1
2
3
4
5
6
7
0
1
2
3
4
5
V+ - Supply Voltage (V)
V
COM
- Analog Voltage (V)
TEST CIRCUITS
V+
V
V
INH
t t 5 ns
f
r
Logic
Input
50%
t t 5 ns
V+
INL
Switch Output
NO or NC
COM
Switch
Input
V
OUT
0.9 x V
OUT
IN
GND
Switch
Output
R
50 W
C
L
35 pF
L
0 V
Logic
Input
t
t
OFF
ON
0 V
Logic “1” = Switch On
Logic input waveforms inverted for switches that have
the opposite logic sense.
C
L
(includes fixture and stray capacitance)
R
L
ǒ
Ǔ
V
+ V
COM
OUT
R
) R
ON
L
FIGURE 1. Switching Time
Document Number: 72030
www.vishay.com
S-22312—Rev. A, 20-Jan-03
5
DG2016
New Product
Vishay Siliconix
TEST CIRCUITS
V+
Logic
Input
V
V
t <5 ns
t <5 ns
f
INH
r
V+
COM
NO
INL
V
O
V
NO
NC
V
NC
R
50 W
C
35 pF
L
L
V
NC
= V
NO
V
IN
90%
O
GND
Switch
Output
0 V
t
D
t
D
C
L
(includes fixture and stray capacitance)
FIGURE 5. Break-Before-Make Interval
V+
V+
DV
OUT
R
gen
V
OUT
NC or NO
IN
COM
V
OUT
+
IN
V
gen
C
= 1 nF
L
On
On
Off
V
IN
= 0 - V+
GND
Q = DV
x C
L
OUT
IN depends on switch configuration: input polarity
determined by sense of switch.
FIGURE 2. Charge Injection
V+
V+
10 nF
10 nF
V+
V+
NC or NO
COM
0V, 2.4 V
IN
Meter
COM
COM
IN
HP4192A
Impedance
Analyzer
0 V, 2.4 V
or Equivalent
R
L
NC or NO
GND
GND
f = 1 MHz
Analyzer
V
COM
Off Isolation + 20 log
V
NOńNC
FIGURE 3. Off-Isolation
FIGURE 4. Channel Off/On Capacitance
Document Number: 72030
www.vishay.com
S-22312—Rev. A, 20-Jan-03
6
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