DG2019 [VISHAY]
Low Voltage, Dual DPDT and Quad SPDT Analog Switches; 低电压，双路DPDT和四路SPDT模拟开关
| 型号： | DG2019 |
| 厂家： | 
VISHAY |
| 描述： | Low Voltage, Dual DPDT and Quad SPDT Analog Switches |
| 文件： | 总8页 (文件大小：82K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DG2018/2019
Vishay Siliconix
New Product
Low Voltage, Dual DPDT and Quad SPDT Analog Switches
FEATURES
BENEFITS
APPLICATIONS
D Low Voltage Operation (1.8 V to 5.5 V)
D Low On Resistance
D Ideal for Both Analog and Digital
D Cellular Phones
Signal Switching
D Audio and Video Signal Routing
D PCMCIA Cards
– rDS(on) : 6 W @ 2.7 V
D Reduced Power Consumption
D Low Voltage Logic Compatible
D High Accuracy
D Battery Operated Systems
D Portable Instrumentation
– DG2019: VINH = 1 V
D Reduced PCB Space
D Fast Switching
D High Bandwidth: 150 MHz
D QFN-16 Package
D Low Leakage
DESCRIPTION
The DG2018 and DG2019 are low voltage, single supply
analog switches. The DG2018 is dual
double-pole/double-throw (DPDT) with two control inputs that
each controls a pair of single-pole/double-throw (SPDT). The
DG2019 uses one control pin to operate four independent
SPDT switches.
performance switching of analog signals; providing low
on-resistance (6 W @ +2.7 V), fast speed (Ton, Toff @ 42 ns
and 16 ns), and a bandwidth that exceeds 150 MHz.
a
The DG2018 and DG2019 were designed to offer solutions
that extend beyond audio/video functions, to providing the
performance required for today’s demanding mixed-signal
switching in portable applications.
When operated on a +3-V supply, the DG2018’s control pins
are compatible with 1.8-V digital logic. The DG2019 has an
available feature of a VL pin that allows a 1.0-V threshold for the
control pin when VL is powered with 1.5 V.
An epitaxial layer prevents latch-up. Brake-before-make is
guaranteed for all SPDT’s. All switches conduct equally well in
both directions when on, and blocks up to the power supply
level when off.
Built on Vishay Siliconix’s low voltage submicron CMOS
process, the DG2018 and DG2019 are ideal for high
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG2018DN
QFN-16 (3 X 3)
IN1, IN2
TRUTH TABLE
COM1 NO1
V+
NC4
Logic
NC1 and NC2
NO1 and NO2
16 15
14
13
0
1
ON
OFF
ON
OFF
NC1
IN1, IN2
NO2
COM4
NO4
1
2
3
4
12
11
10
9
IN3, IN4
Logic
NC3 and NC4
NO3 and NO4
IN3, IN4
NC3
0
1
ON
OFF
ON
OFF
COM2
ORDERING INFORMATION
5
6
7
8
Temp Range
Package
Part Number
NC2 GND NO3 COM3
Top View
-40 to 85°C
QFN-16 (3 x 3 mm)
DG2018DN
Document Number: 72342
S-31644—Rev. A, 01-Aug-03
www.vishay.com
1
DG2018/2019
New Product
Vishay Siliconix
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG2019DN
QFN-16 (3 X 3)
TRUTH TABLE
COM1 NO1
16 15
V+
14
NC4
13
Logic
NC1, 2, 3, and 4 NO1, 2, 3, and 4
0
1
ON
OFF
ON
NC1
IN
COM4
NO4
1
2
3
4
12
11
10
9
OFF
ORDERING INFORMATION
NO2
COM2
V
L
Temp Range
Package
Part Number
-40 to 85°C
QFN-16 (3 x 3 mm)
DG2019DN
NC3
5
6
7
8
NC2 GND NO3 COM3
Top View
ABSOLUTE MAXIMUM RATINGS
b
Reference to GND
Power Dissipation (Packages)
c
V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to +6 V
IN, COM, NC, NO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to (V+ + 0.3 V)
Continuous Current (Any terminal) . . . . . . . . . . . . . . . . . . . . . . . . . . . "50 mA
Peak Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . "100 mA
(Pulsed at 1 ms, 10% duty cycle)
QFN-16 (3 x 3 mm) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 850 mW
Notes:
a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by inter-
nal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 4.0 mW/_C above 70_C
Storage Temperature (D Suffix) . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 150°C
Document Number: 72342
S-31644—Rev. A, 01-Aug-03
www.vishay.com
2
DG2018/2019
Vishay Siliconix
New Product
SPECIFICATIONS (V+ = 3 V)
Limits
Test Conditions
−40 to 85_C
Otherwise Unless Specified
V+ = 3 V, "10%
e
(DG2018 Only) V = 0.5 or 1.4 V
IN
Minb
Typc
Maxb
Unit
Tempa
e
(DG2019 Only) V = 1.5 V, V = 0.4 or 1.0 V
Parameter
Analog Switch
Symbol
L
IN
V
, V
COM
,
NO NC
V
d
Analog Signal Range
Full
0
V+
V
V+ = 2.7 V, V
= 0.2 V/1.5 V
Room
Full
6
12
15
COM
On-Resistance
r
ON
ON
I , I = 10 mA
NO NC
r
W
r
r
Flatness
Room
Room
0.5
0.6
0.3
2
3
ON
ON
V+ = 2.7 V
= 0 to V+, I , I = 10 mA
Flatness
V
COM
NO NC
Match Between Channels
Dr
ON
I
I
,
Room
Full
−1
−10
1
10
NO(off)
NC(off)
V+ = 3.3 V, V , V =0.3 V/3 V
NO NC
= 3 V/ 0.3 V
Switch Off Leakage Current
V
COM
Room
Full
−1
−10
1
10
I
0.3
0.3
nA
COM(off)
Room
Full
−1
1.0
1
10
Channel-On Leakage Current
Digital Control
I
V+ = 3.3 V, V , V = V
= 0.3 V/ 3 V
COM(on)
NO NC
COM
DG2018
DG2019
DG2018
DG2019
Full
Full
Full
Full
Full
Full
1.4
1.0
Input High Voltage
V
INH
V
V
= 1.5 V
= 1.5 V
L
V
0.5
0.4
Input Low Voltage
V
INL
L
Input Capacitance
Input Current
C
f = 1 MHz
= 0 or V+
9
pF
in
IINL or IINH
V
−1
1
mA
IN
Dynamic Characteristics
Room
Full
42
16
55
65
Turn-On Time
t
ON
V
NO
or V = 2.0 V, R = 300 W, C = 35 pF
NC L L
Room
Full
25
35
ns
Turn-Off Time
t
OFF
Break-Before-Make Time
t
d
V
NO
or V = 2.0 V, R = 50 W, C = 35 pF
Full
1
NC
L
L
d
Charge Injection
Q
C = 1 nF, V
= 0 V, R = 0 W
GEN
Room
Room
Room
Room
Room
Room
Room
−1.46
−54
−53
9
pC
dB
INJ
L
GEN
d
Off-Isolation
OIRR
R
L
= 50 W, C = 5 pF, f = 1 MHz
L
d
Crosstalk
X
TALK
C
NO(off)
C
NC(off)
C
NO(on)
d
N , N Off Capacitance
O
C
9
V
IN
= 0 or V+, f = 1 MHz
pF
30
d
Channel-On Capacitance
C
NC(on)
30
Power Supply
Power Supply Current
I+
V
IN
= 0 or V+
Full
0.01
1.0
mA
Notes:
a. Room = 25°C, Full = as determined by the operating suffix.
b. Typical values are for design aid only, not guaranteed nor subject to production testing.
c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
d. Guarantee by design, nor subjected to production test.
e.
V
IN
= input voltage to perform proper function.
Document Number: 72342
S-31644—Rev. A, 01-Aug-03
www.vishay.com
3
DG2018/2019
New Product
Vishay Siliconix
SPECIFICATIONS (V+ = 5 V)
Limits
Test Conditions
−40 to 85_C
Otherwise Unless Specified
V+ = 5 V, "10%,
e
(DG2018 Only) V = 0.8 or 1.8 V
IN
Minb
Typc
Maxb
Unit
Tempa
e
(DG2019 Only) V = 1.5 V, V = 0.4 or 1.0 V
Parameter
Analog Switch
Symbol
L
IN
V
, V
COM
,
NO NC
V
d
Analog Signal Range
Full
0
V+
V
Room
Full
4
8
10
On-Resistance
r
V+ = 4.5 V, V
= 3 V, I , I = 10 mA
ON
ON
COM NO NC
r
W
r
r
Flatness
Room
Room
0.6
0.6
1.2
1.2
ON
ON
V+ = 4.5 V
Flatness
V
COM
= 0 to V+, I , I = 10 mA
NO NC
Match Between Channels
Dr
ON
I
I
,
Room
Full
−1
−10
1
10
NO(off)
0.03
NC(off)
V+ = 5.5 V
f
Switch Off Leakage Current
V
, V = 1 V/4.5 V, V
= 4.5 V/1 V
= 1 V/4.5 V
NO NC
COM
Room
Full
−1
−10
1
10
I
0.03
0.03
nA
COM(off)
Room
Full
−1
−10
1
10
f
Channel-On Leakage Current
I
V+ = 5.5 V, V , V = V
NO NC COM
COM(on)
Digital Control
DG2018
DG2019
DG2018
DG2019
Full
Full
Full
Full
Full
Full
1.8
1.0
Input High Voltage
V
INH
V
V
= 1.5 V
= 1.5 V
L
V
0.8
0.4
Input Low Voltage
V
INL
L
Input Capacitance
Input Current
C
9
pF
in
IINL or IINH
V
IN
= 0 or V+
1
1
1
mA
Dynamic Characteristics
Room
Full
44
19
48
52
Turn-On Time
t
ON
V
or V = 3 V, R = 300 W, C = 35 pF
NC L L
NO
Room
Full
33
35
ns
Turn-Off Time
t
OFF
Break-Before-Make Time
t
V
or V = 3 V, R = 50 W, C = 35 pF
Full
d
NO
NC
L
L
d
Charge Injection
Q
C = 1 nF, V
= 0 V, R = 0 W
GEN
Room
Room
Room
Room
Room
Room
Room
−2.46
−54
−53
7.5
pC
dB
INJ
L
GEN
d
Off-Isolation
OIRR
R
L
= 50 W, C = 5 pF, f = 1 MHz
L
d
Crosstalk
X
TALK
C
NO(off)
C
NC(off)
C
NO(on)
d
Source-Off Capacitance
7.5
V
IN
= 0 or V+, f = 1 MHz
pF
30
d
Channel-On Capacitance
C
NC(on)
30
Power Supply
Power Supply Range
Power Supply Current
V+
I+
1.8
5.5
1.0
V
V
IN
= 0 or V+
Full
0.01
mA
Notes:
a. Room = 25°C, Full = as determined by the operating suffix.
b. Typical values are for design aid only, not guaranteed nor subject to production testing.
c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
d. Guarantee by design, nor subjected to production test.
e.
f.
V
= input voltage to perform proper function.
IN
Not production tested.
Document Number: 72342
S-31644—Rev. A, 01-Aug-03
www.vishay.com
4
DG2018/2019
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
r
vs. V
and Supply Voltage
r
vs. Analog Voltage and Temperature
ON
ON
COM
10
9
8
7
6
5
4
3
2
1
0
V+ = 2.7 V
85_C
T = 25_C
25_C
I
= 10 mA
8
COM
−40_C
V+ = 2.7 V
6
V+ = 5.5 V
85_C
V+ = 5.5 V
25_C
4
V+ = 3.3 V
−40_C
2
0
0
1
2
3
4
5
6
0
1
2
3
4
5
6
V
COM
− Analog Voltage (V)
V
COM
− Analog Voltage (V)
Supply Current vs. Temperature
Supply Current vs. Input Switching Frequency
10000
1000
10 mA
1 mA
100 mA
10 mA
1 mA
V+ = 5.5 V
IN
V
= 0 V
100
10
100 nA
10 nA
1
0
−60 −40 −20
0
20
40
60
80
100
0
2 M
4 M
6 M
8 M
10 M
Temperature (_C)
Input Switching Frequency (Hz)
Leakage Current vs. Temperature
Leakage vs. Analog Voltage
10000
1000
150
125
100
75
V+ = 5 V
V = 3.3 V
+
50
I
COM(off)
I
COM(on)
I
, II
NO(off) NC(off)
25
100
10
0
−25
−50
I
, I
I
NO(off) NC(off)
COM(off)
I
COM(on)
−75
−100
−125
−150
1
−60 −40 −20
0
20
40
60
80
100
0.0
0.5
V
1.0
1.5
2.0
2.5
3.0
3.5
Temperature (_C)
, V , V − Analog Voltage (V)
COM NO NC
Document Number: 72342
S-31644—Rev. A, 01-Aug-03
www.vishay.com
5
DG2018/2019
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Switching Time vs. Temperature
vs. Supply Voltage
Switching Voltage vs. Supply Voltage (V+)
50
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
R
L
= 300 W
DG2018
t
V+ = 3.3 V
ON
40
30
20
10
0
ON/OFF
t
V+ = 5.5 V
ON
OFF/ON
t
V+ = 3.3 V
OFF
t
V+ = 5.5 V
OFF
−60 −40 −20
0
20
40
60
80
100
0
1
2
3
4
5
6
Temperature (_C)
V
+ −
Supply Voltage (V)
V
IN
vs. V (Typ)
L
Charge Injection at Source vs. Analog Voltage
1.8
10
8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
DG2019
V
+
= 5.5 V
6
4
V+ = 3.3 V
= 5.5 V
2
V
+
0
V+ = 3.3 V
−2
−4
−6
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
0
1
2
3
4
5
6
V
COM
− Analog Voltage (V)
V
L
(V)
Insertion Loss, Off Isolation and Crosstalk
vs. Frequency
20
0
Insertion Loss
−3 dB = 150 MHz
−20
−40
V+ = 3.3, 5.5 V
L
R
= 50 W
OIRR
−60
Crosstalk
−80
−100
−120
100 K
1 M
10 M
Frequency (Hz)
100 M
1 G
Document Number: 72342
S-31644—Rev. A, 01-Aug-03
www.vishay.com
6
DG2018/2019
Vishay Siliconix
New Product
TEST CIRCUITS
V+
V
V
INH
t t 5 ns
f
r
Logic
Input
50%
t t 5 ns
V+
NO or NC
INL
Switch Output
COM
Switch
Input
V
OUT
0.9 x V
OUT
IN
GND
Switch
Output
R
300 W
C
L
35 pF
L
0 V
Logic
Input
t
t
OFF
ON
0 V
Logic “1” = Switch On
Logic input waveforms inverted for switches that have
the opposite logic sense.
C
L
(includes fixture and stray capacitance)
R
L
ǒ
Ǔ
V
+ V
OUT
COM
R
) R
ON
L
FIGURE 1. Switching Time
V+
V+
Logic
Input
V
V
t <5 ns
f
INH
r
t <5 ns
COM
NO
NC
INL
V
O
V
NO
V
NC
R
50 W
C
L
35 pF
L
V
NC
= V
NO
V
IN
90%
O
GND
Switch
Output
0 V
t
D
t
D
C
L
(includes fixture and stray capacitance)
FIGURE 3. Break-Before-Make Interval
V+
V+
DV
OUT
R
gen
V
OUT
NC or NO
IN
COM
V
OUT
+
IN
V
gen
C
= 1 nF
L
On
On
Off
Q = DV
V
IN
= 0 − V+
GND
x C
OUT
L
IN depends on switch configuration: input polarity
determined by sense of switch.
FIGURE 2. Charge Injection
Document Number: 72342
S-31644—Rev. A, 01-Aug-03
www.vishay.com
7
DG2018/2019
New Product
Vishay Siliconix
TEST CIRCUITS
V+
V+
V+
10 nF
10 nF
V+
NC or NO
COM
0V, 2.4 V
IN
Meter
COM
COM
IN
HP4192A
Impedance
Analyzer
0 V, 2.4 V
or Equivalent
R
L
NC or NO
GND
GND
f = 1 MHz
Analyzer
V
COM
Off Isolation + 20 log
V
NOńNC
FIGURE 4. Off-Isolation
FIGURE 5. Channel Off/On Capacitance
Document Number: 72342
S-31644—Rev. A, 01-Aug-03
www.vishay.com
8
相关型号：
DG2019DN-E3
IC QUAD 1-CHANNEL, SGL POLE DOUBLE THROW SWITCH, QCC16, 3 X 3 MM, QFN-16, Multiplexer or Switch
VISHAY
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