DG308BDY [VISHAY]
Improved Quad CMOS Analog Switches; 改进的四路CMOS模拟开关
| 型号： | DG308BDY |
| 厂家： | 
VISHAY |
| 描述： | Improved Quad CMOS Analog Switches |
| 文件： | 总7页 (文件大小：89K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
–40 to 85
_C
16-Pin Narrow SOIC
16-Pin TSSOP
DG308B/309B
Vishay Siliconix
Improved Quad CMOS Analog Switches
FEATURES
BENEFITS
APPLICATIONS
D "22-V Supply Voltage Rating
D CMOS Compatible Logic
D Wide Analog Signal Range
D Simple Logic Interface
D Higher Accuracy
D Industrial Instrumentation
D Test Equipment
D Low On-Resistance—rDS(on): 45 W
D Low Leakage—ID(on): 20 pA
D Single Supply Operation Possible
D Extended Temperature Range
D Fast Switching—tON: < 200 ns
D Low Glitching—Q: 1 pC
D Communications Systems
D Disk Drives
D Minimum Transients
D Reduced Power Consumption
D Superior to DG308A/309
D Space Savings (TSSOP)
D Computer Peripherals
D Portable Instruments
D Sample-and-Hold Circuits
DESCRIPTION
The DG308B/309B analog switches are highly improved
versions of the industry-standard DG308A/309. These
devices are fabricated in Vishay Siliconix’ proprietary silicon
gate CMOS process, resulting in lower on-resistance, lower
leakage, higher speed, and lower power consumption.
switching transients. The DG308B and DG309B can handle
up to "22-V input signals. An epitaxial layer prevents latchup.
All devices feature true bi-directional performance in the on
condition, and will block signals to the supply levels in the off
condition.
These quad single-pole single-throw switches are designed
for a wide variety of applications in telecommunications,
instrumentation, process control, computer peripherals, etc.
An improved charge injection compensation design minimizes
The DG308B is a normally open switch and the DG309B is a
normally closed switch. (See Truth Table.)
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG308B
TRUTH TABLE
Dual-In-Line, SOIC and TSSOP
Logic
DG308B
DG309B
0
1
OFF
ON
ON
IN
D
IN
2
1
1
1
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
OFF
D
2
Logic “0” v 3.5V
Logic “1” w 11 V
S
S
2
V–
V+
ORDERING INFORMATION
Temp Range
Package
Part Number
GND
NC
DG308BDJ
S
S
3
4
4
4
16-Pin Plastic DIP
DG309BDJ
D
D
3
DG308BDY
DG309BDY
DG308BDQ
DG309BDQ
DG308BAK
DG308BAK/883
DG309BAK
DG309BAK/883
IN
IN
3
Top View
–55 to 125C
16-Pin CerDIP
Document Number: 70047
S-52896—Rev. E, 14-Jul-97
www.vishay.com S FaxBack 408-970-5600
4-1
DG308B/309B
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
b
Voltages Referenced to V–
Power Dissipation (Package)
c
16-Pin Plastic DIP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 470 mW
16-Pin Narrow SOIC and TSSOP . . . . . . . . . . . . . . . . . . . . . . . . . . . . 640 mW
16-Pin CerDIP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900 mW
V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 V
d
GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 V
a
e
Digital Inputs V , V . . . . . . . . . . . . . . . . . . . . . . . . . . (V–) –2 V to (V+) +2 V
S
D
Notes:
or 30 mA, whichever occurs first
a. Signals on S , D , or IN exceeding V+ or V– will be clamped by internal
X
X
X
Current, Any Terminal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA
Peak Current, S or D
(Pulsed at 1 ms, 10% duty cycle max) . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA
diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 6.5 mW/_C above 75_C
d. Derate 7.6 mW/_C above 75_C
Storage Temperature
(AK, Suffix) . . . . . . . . . . . . . . . . . –65 to 150_C
e. Derate 12 mW/_C above 75_C
(DJ, DY, DQ Suffix) . . . . . . . . . . –65 to 125_C
a
SPECIFICATIONS
A Suffix
–55 to 125_C
Mind Maxd Mind Maxd Unit
D Suffix
–40 to 85_C
Test Conditions
Unless Specified
V+ = 15 V, V– = –15 V
f
Parameter
Symbol
Tempb
Typc
V
IN
= 11 V, 3.5 V
Analog Switch
e
Analog Signal Range
V
Full
V
-15
15
-15
15
ANALOG
85
85
Room
Full
45
Drain-Source On-Resistance
r
W
DS(on)
100
100
V
D
= "10 V, I = 1 mA
S
r
Match
Dr
DS(on)
Room
2
%
DS(on)
-0.5
-20
0.5
20
Room
Full
"0.01
0.5
5
-0.5
–5
Source Off Leakage Current
Drain Off Leakage Current
Drain On Leakage Current
Digital Control
I
I
V
= "14 V, V = #14 V
S(off)
S
D
-0.5
-20
0.5
20
Room
Full
"0.01
"0.02
0.5
5
-0.5
–5
V
D
= "14 V, V = #14 V
nA
D(off)
S
-0.5
-40
0.5
40
Room
Full
–0.5
–10
0.5
10
I
V = V = "14 V
S D
D(on)
Input Voltage High
Input Voltage Low
Input Current
V
Full
Full
11
11
INH
V
V
3.5
1
3.5
1
INL
I
or I
V
INH
or V
INL
Full
mA
–1
–1
INH
INL
Input Capacitance
C
IN
Room
5
pF
Dynamic Characteristics
Turn-On Time
Turn-Off Time
t
Room
Room
200
150
200
150
ON
V
S
= 3 V, See Figure 2
ns
t
OFF
C
L
= 1000 pF, V = 0 V,
g
Charge Injection
Q
Room
1
pC
R
g
= 0 W
Source-Off Capacitance
Drain-Off Capacitance
Channel On Capacitance
Off Isolation
C
C
C
Room
Room
Room
Room
5
5
S(off)
V
= 0 V, f = 1 MHz
S
pF
dB
D(off)
D(on)
V
= V = 0 V, f = 1 MHz
16
90
D
S
OIRR
C
S
= 15 pF, R = 50 W
L
L
Channel-to-Channel
Crosstalk
V
= 1 V
, f = 100 kHz
RMS
X
TALK
Room
95
Document Number: 70047
S-52896—Rev. E, 14-Jul-97
www.vishay.com S FaxBack 408-970-5600
4-2
DG308B/309B
Vishay Siliconix
a
SPECIFICATIONS
A Suffix
–55 to 125_C
Mind Maxd Mind Maxd Unit
D Suffix
–40 to 85_C
Test Conditions
Unless Specified
V+ = 15 V, V– = –15 V
f
Parameter
Symbol
Tempb
Typc
V
IN
= 11 V, 3.5 V
Power Supply
1
5
1
5
Room
Full
Positive Supply Current
Negative Supply Current
I+
I–
V
IN
= 0 or 15 V
mA
-1
-5
-1
-5
Room
Full
Power Supply Range for
Continuous Operation
V
OP
Full
V
"4
"22
"4
"22
a
SPECIFICATIONS FOR SINGLE SUPPLY
A Suffix
–55 to 125_C
Mind Maxd Mind Maxd Unit
D Suffix
–40 to 85_C
Test Conditions
Unless Specified
V+ = 12 V, V– = 0 V
f
Parameter
Symbol
Tempb
Typc
V
IN
= 11 V, 3.5 V
Analog Switch
e
Analog Signal Range
V
Full
V
0
12
0
12
ANALOG
Drain-Source
On-Resistance
Room
Full
90
160
200
160
200
r
V = 3 V, 8 V, I = 1 mA
D S
W
DS(on)
Dynamic Characteristics
Turn-On Time
Turn-Off Time
t
Room
Room
300
200
300
200
ON
V
S
= 8 V, See Figure 2
ns
t
OFF
Charge Injection
Q
C
L
= 1 nF, V = 6 V, R = 0 W
gen
Room
4
pC
gen
Power Supply
1
5
1
5
Room
Full
Positive Supply Current
Negative Supply Current
I+
I–
V
IN
= 0 or 12 V
mA
-1
-5
-1
-5
Room
Full
Power Supply Range for
Continuous Operation
V
OP
Full
V
4
44
4
44
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25_C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f.
V
IN
= input voltage to perform proper function.
Document Number: 70047
S-52896—Rev. E, 14-Jul-97
www.vishay.com S FaxBack 408-970-5600
4-3
DG308B/309B
Vishay Siliconix
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)
r
vs. V and Power Supply Voltages
DS(on)
D
r
vs. V and Temperature
DS(on)
D
110
100
90
100
90
80
70
60
50
40
30
20
10
0
V+ = 15 V
V– = –15 V
"5 V
80
70
125_C
85_C
25_C
"10 V
"15 V
60
50
–55_C
40
30
"20 V
20
10
–15
–10
–5
V
0
5
10
15
–20 –16 –12 –8 –4
0
4
8
12 16 20
– Drain Voltage (V)
V
D
– Drain Voltage (V)
D
r
vs. V and Single Power Supply Voltages
Leakage Currents vs. Analog Voltage
DS(on)
D
40
30
250
V+ = 5 V
225
200
175
150
125
100
75
V+ = 22 V
V– = –22 V
T
A
= 25_C
20
I
D(on)
10
7 V
I
, I
0
S(off) D(off)
10 V
12 V
–10
–20
–30
–40
15 V
50
25
0
0
2
4
6
8
10
12
14
16
–20 –15 –10 –5
0
5
10
15
20
V
D
– Drain Voltage (V)
Analog Voltage
Leakage Currents vs. Temperature
Q
Q – Charge Injection vs. Analog Voltage
S, D
1 nA
30
20
V+ = 15 V
V– = –15 V
= "14 V
V
S,
V
D
10
100 pA
V+ = 15 V
V– = –15 V
0
V+ = 12 V
V– = 0 V
I
, I
S(off) D(off)
–10
–20
–30
10 pA
1 pA
–55 –35 –15
5
25
45
65
85 105 125
–15
–10
–5
0
5
10
15
Temperature (_C)
Analog Voltage (V)
Document Number: 70047
S-52896—Rev. E, 14-Jul-97
www.vishay.com S FaxBack 408-970-5600
4-4
DG308B/309B
Vishay Siliconix
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)
Off Isolation vs. Frequency
120
V+ = 15 V
V– = –15 V
110
100
90
R = 50 W
L
80
70
60
50
40
10 k
100 k
1 M
10 M
f – Frequency (Hz)
SCHEMATIC DIAGRAM (TYPICAL CHANNEL)
V+
S
X
Level
Shift/
Drive
V–
V+
IN
X
D
X
GND
V–
FIGURE 1.
TEST CIRCUITS
+15 V
t <20 ns
t <20 ns
f
r
12 V
0 V
V+
Logic
Input
50%
S
D
V
S
= +3 V
12 V
V
O
t
IN
GND
OFF
R
L
C
L
1 kW
35 pF
V–
90%
Switch
Output
V
O
t
–15 V
= V
ON
R
L
V
O
S
R
L
+ r
DS(on)
FIGURE 2. Switching Time
Document Number: 70047
S-52896—Rev. E, 14-Jul-97
www.vishay.com S FaxBack 408-970-5600
4-5
DG308B/309B
Vishay Siliconix
TEST CIRCUITS
C
+15 V
+15 V
V+
C
V+
S
D
D
V
S
1
1
R
g
= 50 W
V
O
S
D
50 W
V
S
IN
1
R
g
= 50
W
0V, 15 V
NC
50 W
V
O
S
2
2
IN
0V, 15 V
50 W
GND
V–
C
IN
2
0V, 15 V
GND
V–
C
–15 V
C = RF bypass
Isolation = 20 log
V
V
V
S
S
X
Off Isolation = 20 log
TALK
–15 V
V
O
O
FIGURE 3. Off Isolation
FIGURE 4. Channel-to-Channel Crosstalk
+15 V
DV
O
V
O
V+
R
g
S
D
V
O
IN
V
g
C
ON
OFF
ON
IN
X
L
12 V
1000 pF
V–
GND
DV = measured voltage error due to charge injection
O
The charge injection in coulombs is Q = C x DV
L
O
–15 V
FIGURE 5. Charge Injection
APPLICATIONS
30 pF
+5 V
+15 V
+15 V
V
L
V+
V
IN1
+
LM101A
–15 V
+15 V
V
IN2
R
18 kW
R
R
F1
100 kW
F1
F1
–
9.9 kW
DG419
DG308B
CH
GND
V–
–15 V
R
2 kW
R
100 W
R
100 W
Gain 1 (x1)
G1
G2
G3
R
F
+ R
G
Gain =
Gain 2 (x10)
R
G
Gain 3 (x100)
Gain 4 (x1000)
V–
GND
Logic High = Switch On
–15 V
FIGURE 6. A Precision Amplifier with Digitally Programmable Inputs and Gains
Document Number: 70047
S-52896—Rev. E, 14-Jul-97
www.vishay.com S FaxBack 408-970-5600
4-6
DG308B/309B
Vishay Siliconix
APPLICATIONS
15 V
V+
Logic Input
Low = Sample
High = Hold
1 kW
+15 V
+15 V
–15 V
–
J202
LM101A
V
IN
+
5 MW
5.1 MW
50 pF
200 W
2N4400
V
OUT
1000 pF
DG309B
V–
–15 V
J500
30 pF
J507
–15 V
Aquisition Time
Aperature Time
Sample to Hold Offset
Droop Rate
= 25 ms
= 1 ms
= 5 mV
= 5 mV/s
FIGURE 7. Sample-and-Hold
+15 V
160
120
80
V
1
C
C
4
f
150 pF
3
C4
Select
f
C3
1500 pF
Select
TTL
C
2
Control
0.015 mF
f
C1
f
C2
f
C3
f
C4
f
C2
40
Select
C
1
0.15 mF
f
C1
f
L1
f
L2
f
L3
f
L4
Select
0
DG309B
V–
GND
–40
1
10
100
1 k
10 k
100 k
1 M
–15 V
+15 V
Frequency – Hz
R
= 1 MW
3
R
R
3
A
(Voltage Gain Below Break Frequency) =
= 100 (40 dB)
L
–15 V
–
1
V
OUT
1
R
1
= 10 kW
f
(Break Frequency) =
C
LM101A
2pR C
3
X
1
+
f
L
(Unity Gain Frequency) =
2pR C
1
X
r
DS(on)
R
2
= 10 kW
[ –40 dB
30 pF
Max Attenuation =
10 kW
FIGURE 8. Active Low Pass Filter with Digitally Selected Break Frequency
Document Number: 70047
S-52896—Rev. E, 14-Jul-97
www.vishay.com S FaxBack 408-970-5600
4-7
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