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DG309BDY-T1 [VISHAY]

Improved Quad CMOS Analog Switches; 改进的四路CMOS模拟开关
DG309BDY-T1
型号： DG309BDY-T1
厂家： VISHAY    VISHAY
描述：

Improved Quad CMOS Analog Switches
改进的四路CMOS模拟开关

开关
文件： 总10页 (文件大小：133K)
中文：  中文翻译
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DG308B/309B  
Vishay Siliconix  
Improved Quad CMOS Analog Switches  
DESCRIPTION  
FEATURES  
•
•
•
•
•
•
•
•
22 V Supply Voltage Rating  
CMOS Compatible Logic  
The DG308B/309B analog switches are highly improved  
versions of the industry-standard DG308A/309. These  
devices are fabricated in Vishay Siliconix’ proprietary silicon  
gate CMOS process, resulting in lower on-resistance, lower  
leakage, higher speed, and lower power consumption.  
Pb-free  
Available  
Low On-Resistance - rDS(on): 45 Ω  
Low Leakage - ID(on): 20 pA  
Single Supply Operation Possible  
Extended Temperature Range  
Fast Switching - tON: < 200 ns  
Low Glitching - Q: 1 pC  
RoHS*  
COMPLIANT  
These quad single-pole single-throw switches are designed  
for a wide variety of applications in telecommunications,  
instrumentation, process control, computer peripherals, etc.  
BENEFITS  
An improved charge injection compensation design  
minimizes switching transients. The DG308B and DG309B  
can handle up to 22 V input signals. An epitaxial layer  
prevents latchup.  
•
•
•
•
•
•
•
Wide Analog Signal Range  
Simple Logic Interface  
Higher Accuracy  
All devices feature true bi-directional performance in the on  
condition, and will block signals to the supply levels in the off  
condition.  
Minimum Transients  
Reduced Power Consumption  
Superior to DG308A/309  
Space Savings (TSSOP)  
The DG308B is a normally open switch and the DG309B is  
a normally closed switch. (See Truth Table.)  
APPLICATIONS  
•
•
•
•
•
•
•
Industrial Instrumentation  
Test Equipment  
Communications Systems  
Disk Drives  
Computer Peripherals  
Portable Instruments  
Sample-and-Hold Circuits  
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION  
DG308B  
Dual-In-Line, SOIC and TSSOP  
IN  
D
IN  
2
1
1
1
1
2
3
4
5
6
7
8
16  
15  
14  
13  
12  
11  
10  
9
D
2
TRUTH TABLE  
Logic  
0
1
DG308B  
OFF  
DG309B  
ON  
S
S
2
V-  
V+  
ON  
OFF  
Logic "0" ≤ 3.5 V  
Logic "1" ≥ 11 V  
GND  
NC  
S
S
3
4
4
4
D
D
3
IN  
IN  
3
Top View  
* Pb containing terminations are not RoHS compliant, exemptions may apply  
Document Number: 70047  
S-71241–Rev. F, 25-Jun-07  
www.vishay.com  
1
DG308B/309B  
Vishay Siliconix  
ORDERING INFORMATION  
Temp Range  
Package  
Part Number  
DG308BDJ  
DG308BDJ-E3  
16-Pin PlasticDIP  
DG309BDJ  
DG309BDJ-E3  
DG308BDY  
DG308BDY-E3  
DG308BDY-T1  
DG308BDY-T1-E3  
16-Pin Narrow SOIC  
DG309BDY  
DG309BDY-E3  
DG309BDY-T1  
DG309BDY-T1-E3  
- 40 to 85 °C  
DG308BDQ  
DG308BDQ-E3  
DG308BDQ-T1  
DG308BDQ-T1-E3  
16-Pin TSSOP  
DG309BDQ  
DG309BDQ-E3  
DG309BDQ-T1  
DG309BDQ-T1-E3  
ABSOLUTE MAXIMUM RATINGS  
Parameter  
Limit  
Unit  
Voltages Referenced, V+ to V-  
GND  
44  
25  
V
(V-) - 2 to (V+) + 2  
or  
Digital Inputsa, VS, VD  
30 mA, whichever occurs first  
Current, Any Terminal  
30  
100  
mA  
°C  
Peak Current, S or D (Pulsed at 1 ms, 10 % duty cycle max)  
(AK Suffix)  
Storage Temperature  
- 65 to 150  
- 65 to 125  
470  
(DJ, DY and DQ Suffix)  
16-Pin Plastic DIPc  
Power Dissipation (Package)b  
16-Pin Narrow SOIC and TSSOPd  
16-Pin CerDIPe  
640  
900  
mW  
Notes:  
a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.  
b. All leads welded or soldered to PC Board.  
c. Derate 6.5 mW/°C above 75 °C.  
d. Derate 7.6 mW/°C above 75 °C.  
e. Derate 12 mW/°C above 75 °C.  
www.vishay.com  
2
Document Number: 70047  
S-71241–Rev. F, 25-Jun-07  
DG308B/309B  
Vishay Siliconix  
a
SPECIFICATIONS  
Test Conditions  
Unless Specified  
V+ = 15 V, V- = - 15 V  
A Suffix  
- 55 to 125 °C - 40 to 85 °C  
D Suffix  
Tempb Typc  
Mind Maxd Mind Maxd Unit  
V
IN = 11 V, 3.5 Vf  
Parameter  
Symbol  
Analog Switch  
Analog Signal Rangee  
Drain-Source  
On-Resistance  
rDS(on) Match  
VANALOG  
rDS(on)  
ΔrDS(on)  
IS(off)  
Full  
- 15  
15  
- 15  
15  
V
Ω
%
Room  
Full  
45  
2
85  
100  
85  
100  
VD  
=
10 V, IS = 1 mA  
Room  
Room  
Full  
0.01 - 0.5  
- 20  
0.5  
20  
- 0.5  
- 5  
0.5  
5
VS  
VD  
=
14 V, VD  
14 V, VS  
=
=
14 V  
14 V  
Source Off Leakage Current  
Drain Off Leakage Current  
Drain On Leakage Current  
Room  
Full  
- 0.5  
- 20  
0.5  
20  
- 0.5  
- 5  
0.5  
5
0.01  
ID(off)  
ID(on)  
=
nA  
Room  
Full  
- 0.5  
- 40  
0.5  
40  
- 0.5  
- 10  
0.5  
10  
0.02  
VS = VD  
=
14 V  
Digital Control  
VINH  
VINL  
Input, Voltage High  
Input, Voltage Low  
Input Current  
Full  
Full  
11  
- 1  
11  
- 1  
V
3.5  
1
3.5  
1
IINH or IINL  
CIN  
VINH or VINL  
Full  
µA  
pF  
Input Capacitance  
Dynamic Characteristics  
Turn-On Time  
Room  
5
tON  
Room  
Room  
Room  
Room  
Room  
Room  
Room  
200  
150  
200  
150  
VS = 3 V, See Figure 2  
CL = 1000 pF, Vg = 0 V, Rg = 0 Ω  
VS = 0 V, f = 1 MHz,  
ns  
tOFF  
Turn-Off Time  
Charge Injection  
Q
1
5
pC  
CS(off)  
CD(off)  
CD(on)  
Source-Off Capacitance  
Drain-Off Capacitance  
Channel-On Capacitance  
Off-Isolation  
5
pF  
dB  
VD = VS = 0 V, f = 1 MHz  
16  
90  
OIRR  
XTALK  
CL = 15 pF, RL = 50 Ω,  
VS = 1 VRMS, f = 100 kHz  
Channel-to-Channel  
Crosstalk  
Room  
95  
Power Supply  
Room  
Full  
Room  
Full  
1
5
1
5
Positive Supply Current  
I+  
I-  
V
IN = 0 V or 15 V  
µA  
V
- 1  
- 5  
- 1  
- 5  
Negative Supply Current  
Power Supply Range for  
Continuous Operation  
VOP  
Full  
4
22  
4
22  
Document Number: 70047  
S-71241–Rev. F, 25-Jun-07  
www.vishay.com  
3
DG308B/309B  
Vishay Siliconix  
a
SPECIFICATIONS FOR SINGLE SUPPLY  
Test Conditions  
Unless Specified  
V+ = 12 V, V- = 0 V  
A Suffix  
- 55 to 125 °C - 40 to 85 °C  
D Suffix  
Tempb Typc  
Mind Maxd Mind Maxd Unit  
V
IN = 11 V, 3.5 Vf  
Parameter  
Symbol  
Analog Switch  
Analog Signal Rangee  
Drain-Source  
VANALOG  
rDS(on)  
Full  
0
12  
0
12  
V
Room  
Full  
90  
4
160  
200  
160  
200  
VD = 3 V, 8 V, IS = 1 mA  
Ω
On-Resistance  
Dynamic Characteristics  
Turn-On Time  
tON  
tOFF  
Q
Room  
Room  
Room  
300  
200  
300  
200  
VS = 8 V, See Figure 2  
ns  
Turn-Off Time  
CL = 1 nF, Vgen = 6 V, Rgen = 0 Ω  
Charge Injection  
Power Supply  
pC  
Room  
Full  
Room  
Full  
1
5
1
5
Positive Supply Current  
Negative Supply Current  
I+  
I-  
VIN = 0 V or 12 V  
µA  
V
- 1  
- 5  
- 1  
- 5  
Power Supply Range for  
Continuous Operation  
VOP  
Full  
4
44  
4
44  
Notes:  
a. Refer to PROCESS OPTION FLOWCHART .  
b. Room = 25 °C, Full = as determined by the operating temperature suffix.  
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.  
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.  
e. Guaranteed by design, not subject to production test.  
f. VIN = input voltage to perform proper function.  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation  
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum  
rating conditions for extended periods may affect device reliability.  
www.vishay.com  
4
Document Number: 70047  
S-71241–Rev. F, 25-Jun-07  
DG308B/309B  
Vishay Siliconix  
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted  
110  
100  
90  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
V+ = 15 V  
V- = - 15 V  
5 V  
80  
70  
125 °C  
85 °C  
10 V  
60  
25 °C  
50  
15 V  
20 V  
- 55 °C  
40  
30  
20  
10  
- 15  
- 10  
- 5  
V
0
5
10  
15  
- 20 - 16 - 12 - 8 - 4  
0
4
8
12 16 20  
– Drain Voltage (V)  
V
D
– Drain Voltage (V)  
D
rDS(on) vs. VD and Temperature  
rDS(on) vs. VD and Power Supply Voltages  
250  
225  
200  
175  
150  
125  
100  
75  
40  
30  
V+ = 5 V  
V+ = 22 V  
V- = - 22 V  
= 25 °C  
T
A
20  
I
D(on)  
10  
7 V  
I
, I  
0
S(off) D(off)  
10 V  
12 V  
- 10  
- 20  
- 30  
- 40  
15 V  
50  
25  
0
0
2
4
6
8
10  
12  
14  
16  
- 20 - 15 - 10 - 5  
0
5
10  
15  
20  
V
D
– Drain Voltage (V)  
Analog Voltage  
Leakage Currents vs. Analog Voltage  
rDS(on) vs. VD and Single Power Supply Voltages  
30  
20  
1 nA  
V+ = 15 V  
V- = - 15 V  
V
S,  
V
=
14 V  
D
10  
100 pA  
V+ = 15 V  
V- = - 15 V  
V+ = 12 V  
V- = 0 V  
0
I
, I  
S(off) D(off)  
- 10  
- 20  
- 30  
10 pA  
1 pA  
- 15  
- 10  
- 5  
0
5
10  
15  
- 55 - 35 - 15  
5
25  
45  
65  
85 105 125  
Analog Voltage (V)  
Temperature (°C)  
QS, QD – Charge Injection vs. Analog Voltage  
Leakage Currents vs. Temperature  
Document Number: 70047  
S-71241–Rev. F, 25-Jun-07  
www.vishay.com  
5
DG308B/309B  
Vishay Siliconix  
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted  
120  
110  
100  
90  
V+ = 15 V  
V- = - 15 V  
R = 50 Ω  
L
80  
70  
60  
50  
40  
10 k  
100 k  
f – Frequency (Hz)  
Off Isolation vs. Frequency  
1 M  
10 M  
SCHEMATIC DIAGRAM (TYPICAL CHANNEL)  
V+  
S
X
Level  
Shift/  
Drive  
V-  
V+  
IN  
X
D
X
GND  
V–  
Figure 1.  
www.vishay.com  
6
Document Number: 70047  
S-71241–Rev. F, 25-Jun-07  
DG308B/309B  
Vishay Siliconix  
TEST CIRCUITS  
+ 15 V  
t < 20 ns  
t < 20 ns  
f
r
12 V  
0 V  
V+  
Logic  
Input  
50 %  
S
D
V
S
= + 3 V  
12 V  
V
O
t
IN  
GND  
OFF  
R
L
C
L
1 kΩ  
35 pF  
V-  
90 %  
Switch  
Output  
V
O
t
- 15 V  
ON  
R
L
V
O
= V  
S
R
L
+ r  
DS(on)  
Figure 2. Switching Time  
C
+ 15 V  
+ 15 V  
V+  
C
V+  
S
D
D
V
S
1
1
R = 50 Ω  
g
V
O
50 Ω  
S
D
V
S
IN  
1
R
g
= 50 Ω  
0 V, 15 V  
50 Ω  
V
O
S
2
2
IN  
NC  
0 V, 15 V  
50 Ω  
GND  
V-  
C
IN  
2
0 V, 15 V  
GND  
V-  
C
- 15 V  
C = RF bypass  
Isolation = 20 log  
V
V
S
S
X
Off Isolation = 20 log  
TA L K  
- 15 V  
V
V
O
O
Figure 3. Off Isolation  
Figure 4. Channel-to-Channel Crosstalk  
+ 15 V  
ΔV  
O
V
O
V+  
R
g
S
D
V
O
IN  
V
g
C
ON  
OFF  
ON  
IN  
X
L
12 V  
1000 pF  
V-  
GND  
ΔV = measured voltage error due to charge injection  
O
The charge injection in coulombs is Q = C x ΔV  
L
O
- 15 V  
Figure 5. Charge Injection  
Document Number: 70047  
S-71241–Rev. F, 25-Jun-07  
www.vishay.com  
7
DG308B/309B  
Vishay Siliconix  
APPLICATIONS  
30 pF  
+ 5 V  
+ 15 V  
+ 15 V  
V
L
V+  
V
IN1  
+
LM101A  
- 15 V  
+ 15 V  
V
IN2  
R
18 kΩ  
R
R
F1  
100 kΩ  
F1  
F1  
-
9.9 kΩ  
DG419  
DG308B  
CH  
GND  
V-  
- 15 V  
R
2 kΩ  
R
100 Ω  
R
100 Ω  
Gain 1 (x 1)  
G1  
G2  
G3  
R
F
+ R  
G
Gain =  
Gain 2 (x 10)  
R
G
Gain 3 (x 100)  
Gain 4 (x 1000)  
V-  
GND  
Logic High = Switch On  
- 15 V  
Figure 6. A Precision Amplifier with Digitally Programmable Inputs and Gains  
15 V  
V+  
Logic Input  
Low = Sample  
High = Hold  
1 kΩ  
+ 15 V  
+ 15 V  
-
- 15 V  
J202  
LM101A  
V
IN  
+
5 MΩ  
5.1 MΩ  
50 pF  
200 Ω  
2N4400  
V
OUT  
1000 pF  
DG309B  
V-  
J500  
30 pF  
- 15 V  
J507  
- 15 V  
Aquisition Time  
Aperature Time  
Sample to Hold Offset  
Droop Rate  
= 25 µs  
= 1 µs  
= 5 mV  
= 5 mV/s  
Figure 7. Sample-and-Hold  
www.vishay.com  
8
Document Number: 70047  
S-71241–Rev. F, 25-Jun-07  
DG308B/309B  
Vishay Siliconix  
APPLICATIONS  
+ 15 V  
160  
120  
80  
V
1
C
C
4
150 pF  
f
C4  
Select  
3
1500 pF  
f
C3  
Select  
C
2
TTL  
Control  
0.015 μF  
f
C1  
f
C2  
f
C3  
f
C4  
f
C2  
40  
Select  
C
1
0.15 µF  
f
C1  
f
L1  
f
L2  
f
L3  
f
L4  
Select  
0
DG309B  
V-  
GND  
- 40  
1
10  
100  
1 k  
10 k  
100 k  
1 M  
- 15 V  
Frequency – Hz  
R
3
= 1 MΩ  
+ 15 V  
R
R
3
A
(Voltage Gain Below Break Frequency) =  
1
= 100 (40 dB)  
L
- 15 V  
-
1
V
OUT  
R
1
= 10 kΩ  
f
(Break Frequency) =  
C
LM101A  
2πR C  
3
X
1
+
f
L
(Unity Gain Frequency) =  
2πR C  
1
X
r
DS(on)  
R
2
= 10 kΩ  
≈ - 40 dB  
Max Attenuation =  
30 pF  
10 kΩ  
Figure 8. Active Low Pass Filter with Digitally Selected Break Frequency  
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon  
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and  
reliability data, see http://www.vishay.com/ppg?70047.  
Document Number: 70047  
S-71241–Rev. F, 25-Jun-07  
www.vishay.com  
9
Legal Disclaimer Notice  
Vishay  
Disclaimer  
All product specifications and data are subject to change without notice.  
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf  
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein  
or in any other disclosure relating to any product.  
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any  
information provided herein to the maximum extent permitted by law. The product specifications do not expand or  
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed  
therein, which apply to these products.  
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this  
document or by any conduct of Vishay.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless  
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such  
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting  
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding  
products designed for such applications.  
Product names and markings noted herein may be trademarks of their respective owners.  
Document Number: 91000  
Revision: 18-Jul-08  
www.vishay.com  
1

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