DG9262DQ [VISHAY]
Low-Voltage Dual SPST Analog Switch; 低电压双通道SPST模拟开关
| 型号： | DG9262DQ |
| 厂家： | 
VISHAY |
| 描述： | Low-Voltage Dual SPST Analog Switch |
| 文件： | 总7页 (文件大小：58K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DG9262/9263
Vishay Siliconix
New Product
Low-Voltage Dual SPST Analog Switch
FEATURES
BENEFITS
APPLICATIONS
D Low Voltage Operation (+2.7 to +5 V)
D Low On-Resistance - rDS(on): 40 W
D Fast Switching - tON : 35 ns, tOFF: 20 ns
D Low Leakage - ICOM(on): 200-pA max
D Low Charge Injection - QINJ: 1 pC
D Low Power Consumption
D Reduced Power Consumption
D Simple Logic Interface
D High Accuracy
D Battery Operated Systems
D Portable Test Equipment
D Sample and Hold Circuits
D Cellular Phones
D Reduce Board Space
D Communication Systems
D Military Radio
D TTL/CMOS Compatible
D PBX, PABX Guidance and Control
D ESD Protection > 2000 V (Method 3015.7)
D Available in MSOP-8 and SOIC-8
Systems
DESCRIPTION
The DG9262/9263 is a single-pole/single-throw monolithic
CMOS analog device designed for high performance
switching of analog signals. Combining low power, high speed
(tON: 35 ns, tOFF: 20 ns), low on-resistance (rDS(on): 40 W)
and small physical size, the DG9262/9263 is ideal for portable
and battery powered applications requiring high performance
and efficient use of board space.
The DG9262/9263 is built on Vishay Siliconix’s low voltage
BCD-15 process. Minimum ESD protection, per Method 3015.7 is
2000 V. An epitaxial layer prevents latchup. Break-before -make is
guaranteed for DG9262/9263.
Each switch conducts equally well in both directions when on,
and blocks up to the power supply level when off.
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
NC
COM
IN
V+
IN
NO
COM
IN
V+
IN
1
1
2
1
1
2
1
2
3
4
8
7
6
5
1
2
3
4
8
7
6
5
1
1
COM
COM
2
2
GND
NC
GND
NO
2
2
Top View
Top View
TRUTH TABLE - DG9262
TRUTH TABLE - DG9263
Logic
Switch
Logic
Switch
0
1
On
Off
0
1
Off
On
Logic “0” v0.8 V
Logic “1”w 2.4 V
Logic “0” v0.8 V
Logic “1”w 2.4 V
ORDERING INFORMATION
Temp Range
Package
Part Number
DG9262DY
DG9263DY
DG9262DQ
DG9263DQ
SOIC-8
-40 to 85°C
MSOP-8
Document Number: 70862
S-05298—Rev. B, 17-Dec-01
www.vishay.com
1
DG9262/9263
New Product
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Reference to GND
Storage Temperature (D Suffix) . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 125°C
b
Power Dissipation (Packages)
c
V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to +13 V
8-Pin Narrow Body SOIC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400 mW
a
IN, COM, NC, NO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to (V+ + 0.3 V)
Continuous Current (Any terminal) . . . . . . . . . . . . . . . . . . . . . . . . . . . "20 mA
Peak Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . "40 mA
(Pulsed at 1ms, 10% duty cycle)
Notes:
a. Signals on S , D , or IN exceeding V+ or V- will be clamped by internal
X
X
X
diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 6.5 mW/_C above 75_C
ESD (Method 3015.7) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . > 2000 V
SPECIFICATIONS (V+ = 3 V)
Test Conditions
Otherwise Unless Specified
D Suffix
–40 to 85_C
e
Minb
Typc
Maxb
Unit
Tempa
V+ = 3 V, "10%, V = 0.8 or 2.4 V
IN
Parameter
Analog Switch
Symbol
d
Analog Signal Range
V
Full
0
3
V
ANALOG
V
or V = 1.5 V, V+ = 2.7 V
Room
Full
50
80
140
NO
NC
Drain-Source On-Resistance
d
r
DS(on)
I
= 5 mA
COM
r
Match
Dr
DS(on)
V
or V = 1.5 V
Room
Room
0.4
4
2
8
W
DS(on)
NO
NC
r
DS(on)
d
r
Flatness
V
or V = 1 and 2 V
NO NC
DS(on)
Flatness
Room
Full
-100
–5000
5
100
5000
g
NO or NC Off Leakage Current
I
V
V
or V = 1 V / 2 V, V
= 2 V / 1 V
NO/NC(off)
NO
NC
COM
Room
Full
-100
–5000
5
100
5000
g
COM Off Leakage Current
I
= 1 V / 2 V, V or V = 2 V / 1 V
COM NO NC
pA
COM(off)
Room
Full
-200
–10000
10
200
10000
g
Channel-On Leakage Current
I
V
= V or V = 1 V / 2 V
COM NO NC
COM(on)
Digital Control
Input Current
IINL or IINH
Full
1
mA
Dynamic Characteristics
Turn-On Time
Room
Full
50
20
120
200
t
ON
V
or V = 1.5 V
ns
NO
NC
Room
Full
50
120
Turn-Off Time
t
OFF
d
Charge Injection
Q
C = 1 nF, V
= 0 V, R = 0 W
GEN
Room
Room
Room
Room
Room
Room
1
–74
–90
7
5
pC
dB
INJ
L
GEN
Off-Isolation
OIRR
R
L
= 50 W, C = 5 pF, f = 1 MHz
L
Crosstalk
X
TALK
NC and NO Capacitance
Channel-On Capacitance
Com-Off Capacitance
C
(off)
C
C
20
13
f = 1 MHz
pF
COM(on)
COM(off)
Power Supply
Power Supply Range
Power Supply Current
V+
I+
2.7
12
1
V
V+ = 3.3 V, V = 0 or 3.3 V
mA
IN
Notes:
a. Room = 25°C, Full = as determined by the operating suffix.
b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
c. Typical values are for design aid only, not guaranteed nor subject to production testing.
d. Guarantee by design, nor subjected to production test.
e.
f.
V
= input voltage to perform proper function.
IN
Difference of min and max values.
g. Guaranteed by 5-V leakage test, not production tested.
Document Number: 70862
S-05298—Rev. B, 17-Dec-01
www.vishay.com
2
DG9262/9263
Vishay Siliconix
New Product
SPECIFICATIONS (V+ = 5 V)
Test Conditions
D Suffix
Otherwise Unless Specified
–40 to 85_C
e
Minb
Typc
Maxb
Unit
Tempa
V+ = 5 V, "10%, V = 0.8 or 2.4 V
IN
Parameter
Symbol
Analog Switch
d
Analog Signal Range
VANALOG
Full
0
5
V
V
or V = 3.5 V, V+ = 4.5 V
Room
Full
30
60
75
NO
NC
Drain-Source On-Resistance
d
r
DS(on)
I
= 5 mA
COM
r
Match
Dr
DS(on)
V
or V = 3.5 V
Room
Room
0.4
2
2
6
W
DS(on)
NO
NC
r
DS(on)
f
r
Flatness
V
or V = 1, 2, and 3 V
NO NC
DS(on)
Flatness
Room
Full
-100
–5000
10
100
5000
NO or NC Off Leakage Current
COM Off Leakage Current
I
V
V
or V = 1 V / 4 V, V
= 4 V / 1 V
NO/NC(off)
NO
NC
COM
Room
Full
-100
–5000
10
100
5000
I
= 1 V / 4 V, V or V = 4 V / 1 V
NO NC
pA
COM(off)
COM
Room
Full
-200
–10000
200
10000
Channel-On Leakage Current
I
V
= V or V = 1 V / 4 V
COM NO NC
COM(on)
Digital Control
Input Current
IINL or IINH
Full
1
mA
Dynamic Characteristics
Turn-On Time
Room
Full
35
20
75
150
t
ON
V
or V = 3.0 V
ns
NO
NC
Room
Full
50
100
Turn-Off Time
t
OFF
d
Charge Injection
Q
C = 1 nF, V
= 0 V, R = 0 W
GEN
Room
Room
Room
Room
Room
Room
2
–74
–90
7
5
pC
dB
INJ
L
GEN
Off-Isolation
OIRR
R
L
= 50 W, C = 5 pF, f = 1 MHz
L
Crosstalk
X
TALK
NC and NO Capacitance
Channel-On Capacitance
Com-Off Capacitance
C(off)
CD(on)
20
13
f = 1 MHz
pF
C
D(off)
Power Supply
Power Supply Range
Power Supply Current
V+
I+
2.7
12
1
V
V+ = 5.5 V, V = 0 or 5.5 V
mA
IN
Notes:
a. Room = 25°C, Full = as determined by the operating suffix.
b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
c. Typical values are for design aid only, not guaranteed nor subject to production testing.
d. Guarantee by design, nor subjected to production test.
e.
f.
V
= input voltage to perform proper function.
IN
Difference of min and max values.
Document Number: 70862
S-05298—Rev. B, 17-Dec-01
www.vishay.com
3
DG9262/9263
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Charge Injection
Supply Current vs. V
IN
2.0
3000
2500
2000
1500
1000
500
V+ = 3 V
1.5
1.0
0.5
0.0
V+ = 5 V
–0.5
–1.0
–1.5
–2.0
0
V+ = 3 V
–500
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
1
2
3
4
5
V
V
IN
COM
Leakage Current vs. Temperature
Off-Isolation vs. Frequency
10 nA
1 nA
–40
–60
100 pA
–80
I
COM(off)
10 pA
1 pA
I
–100
–120
–140
COM(on)
0.1 pA
25
45
65
85
105
125
0.001 M
0.01 M
0.1 M
1 M
10 M
Temperature (_C)
Frequency (Hz)
Off-Leakage vs. Voltage @ 25_C
r
vs. V
DS COM
2.5
2.0
80
60
40
20
V+ = 5 V
1.5
V+ = 3 V
1.0
I
COM
0.5
0.0
V+ = 5 V
–0.5
–1.0
–1.5
–2.0
–2.5
I
NO/NC
0
0
0
1
2
3
4
5
1
2
3
4
5
V
V
COM
COM
Document Number: 70862
S-05298—Rev. B, 17-Dec-01
www.vishay.com
4
DG9262/9263
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
r
vs. V
Switching Time vs. Temperature
DS
COM
80
60
40
20
0
70
60
50
40
30
20
10
0
V+ = 3 V
85_C
t
ON
25_C
40_C
t
OFF
0.0
0.5
1.0
1.5
2.0
2.5
3.0
–60
–30
0
30
60
90
120
V
Temperature (_C)
COM
t
/t
vs. Power Supply Voltage
Input Switching Point vs. Power Supply Voltage
ON OFF
120
100
80
60
40
20
0
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
t
ON
t
OFF
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
2
3
4
5
6
V+
V+
Document Number: 70862
S-05298—Rev. B, 17-Dec-01
www.vishay.com
5
DG9262/9263
New Product
Vishay Siliconix
TEST CIRCUITS
V+
+ 3 V
0 V
t t
r
Logic
Input
50%
20 ns
t t 20 ns
f
V+
Switch Output
NO or NC
COM
Switc
h
V
OUT
0.9 x V
OUT
Input
IN
Switch
Output
R
L
C
L
300 W
35 pF
0 V
Logi
c
GND
t
t
Input
ON
OFF
0 V
Logic “1” = Switch On
Logic input waveforms inverted for switches that have
the opposite logic sense.
C
L
(includes fixture and stray capacitance)
R
L
V
+ V
ǒ
Ǔ
OUT
COM
R
) R
L
ON
FIGURE 1. Switching Time
V+
V+
Logic
Input
3 V
t <5 ns
r
t <5 ns
f
0 V
COM
COM
NO or NC
NO or NC
1
V
V
1
2
2
V
= V
NO
NC
R
300 W
C
L
35 pF
L
V
90%
O
GND
Switch
Output
0 V
t
D
t
D
C
L
(includes fixture and stray capacitance)
FIGURE 2. Break-Before-Make Interval
V+
V+
DV
OUT
R
gen
V
OUT
NC or NO
IN
COM
V
OUT
+
IN
V
gen
C
L
On
On
Off
3 V
GND
Q = DV
x C
L
OUT
IN depends on switch configuration: input polarity
determined by sense of switch.
FIGURE 3. Charge Injection
Document Number: 70862
S-05298—Rev. B, 17-Dec-01
www.vishay.com
6
DG9262/9263
Vishay Siliconix
New Product
TEST CIRCUITS
V+
10 nF
V+
COM
0V, 2.4 V
IN
COM
NC or NO
V
NCńNO
Off Isolation + 20 log
V
R
L
COM
GND
Analyzer
FIGURE 4. Off-Isolation
V+
V+
10 nF
COM
Meter
IN
HP4192A
Impedance
Analyzer
0 V, 2.4 V
or Equivalent
NC or NO
GND
f = 1 MHz
FIGURE 5. Channel Off/On Capacitance
Document Number: 70862
S-05298—Rev. B, 17-Dec-01
www.vishay.com
7
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