DG9421 [VISHAY]

Precision Low-Voltage, Low-Glitch CMOS Analog Switches; 精密,低电压,低毛刺CMOS模拟开关
DG9421
型号: DG9421
厂家: VISHAY    VISHAY
描述:

Precision Low-Voltage, Low-Glitch CMOS Analog Switches
精密,低电压,低毛刺CMOS模拟开关

开关
文件: 总8页 (文件大小:72K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DG9421/DG9422  
Vishay Siliconix  
Precision Low-Voltage, Low-Glitch CMOS Analog Switches  
FEATURES  
BENEFITS  
APPLICATIONS  
D 2.7- thru 12-V Single Supply or  
D High Accuracy  
D Automatic Test Equipment  
D Data Acquisition  
"2.7- thru "6-Dual Supply  
D High Speed, Low Glitch  
D Single and Dual Supply Capability  
D Low rON in Small TSOP Package  
D Low Leakage  
D Low On-Resistance—rDS(on)  
2.0 @ 12 V  
:
D XDSL and DSLAM  
D PBX Systems  
D Fast Switching—tON: 28 ns  
D Reed Relay Replacement  
D Audio and Video Signal Routing  
—tOFF: 22 ns  
D Low Power Consumption  
D TTL and Low Voltage Logic  
D Low Leakage: 10 pA (typ)  
D u2000-V ESD Protection  
DESCRIPTION  
Using BiCMOS wafer fabrication technology allows the  
DG9421/DG9422 to operate on single and dual supplies.  
than 1 pC) and is well suited for applications where signal  
switching accuracy, low noise and low distortion is critical.  
Designed for optimal performance at single 5 V and dual  
"5 V, the DG9421/9422 combine low and flat on-resistance  
(3 ), fast speed (tON = 38 ns) and low charge injection (less  
The DG9421 and DG9422 respond to opposite control logic as  
shown in the Truth Table.  
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION  
TRUTH TABLE  
TSOP-6  
Logic  
DG9421  
DG9422  
V+  
COM  
v-  
IN  
1
2
3
6
5
4
0
1
ON  
OFF  
ON  
NC/NO  
GND  
OFF  
Logic “0” v 0.8 V  
Logic “1” w 2.4 V  
Top View  
Switches Shown for Logic “0” Input  
Device Marking:  
DG9421DV = 4Exxx  
DG9422DV = 4Fxxx  
ORDERING INFORMATION  
DG9421DV  
-40 to 85_C  
6-Pin TSOP  
DG9422DV  
Document Number: 70679  
S-21424—Rev. C, 26-Aug-02  
www.vishay.com  
1
DG9421/DG9422  
Vishay Siliconix  
ABSOLUTE MAXIMUM RATINGS  
V+ to V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 TO 13 V  
GND to V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 V  
Power Dissipation (Package)b  
6-Pin TSOP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 570 mW  
c
V
a
, V , V . . . . . . . . . -0.3 to (V+ +0.3 V) or 50 mA, whichever occurs first  
Notes:  
IN  
S
D
a. Signals on S , D , or IN exceeding V+ or V- will be clamped by internal  
X
X
X
Continuous Current (Any Terminal) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA  
Peak Current, S or D (Pulsed 1 ms, 10% Duty Cycle) . . . . . . . . . . . . 100 mA  
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 150_C  
diodes. Limit forward diode current to maximum current ratings.  
b. All leads welded or soldered to PC Board.  
c. Derate 7 mW/_C above 25_C  
a
SPECIFICATIONS (SINGLE SUPPLY 12 V)  
Limits  
Test Conditions Unless Specified  
-40 to 85_C  
V+ = 12 V, V- = 0 V  
f
V
IN  
= 2.4 V, 0.8 V  
Parameter  
Analog Switch  
Symbol  
Tempb  
Mind  
Typc  
Maxd  
Unit  
a
Analog Signal Range  
V
Full  
0
12  
V
ANALOG  
Drain-Source  
On-Resistance  
V+ = 10.8 V, V- = 0 V  
= 5 mA, V = 2/9 V  
Room  
Full  
2.0  
3
3.4  
r
DS(on)  
I
S
D
Room  
Full  
-1  
-10  
1
10  
I
S(off)  
Switch Off  
Leakage Current  
V
= 1/11 V, V = 11/1 V  
S
D
Room  
Full  
-1  
-10  
1
10  
I
nA  
D(off)  
D(on)  
Channel On  
Leakage Current  
Room  
Full  
-1  
-10  
1
10  
I
V = V = 11/1 V  
S D  
Digital Control  
Input Current, V Low  
I
V
Under Test = 0.8 V  
Under Test = 2.4 V  
Full  
Full  
-1  
-1  
0.02  
0.02  
1
1
IN  
IL  
IN  
IN  
A
Input Current, V High  
IN  
I
IH  
V
Dynamic Characteristics  
Room  
Full  
20  
25  
45  
49  
e
Turn-On Time  
t
ON  
R
V
= 300 , C = 35 pF  
L
L
ns  
= 5 V See Figure 2  
Room  
Full  
47  
59  
S
e
Turn-Off Time  
t
OFF  
e
Charge Injection  
Q
V
= 0 V, R = 0 , C = 1 nF  
Room  
Room  
0.8  
-60  
pC  
dB  
g
g
L
R
L
= 50 , C = 5 pF,  
f = 1 MHz  
L
e
Off Isolation  
OIRR  
e
Source Off Capacitance  
C
S(off)  
C
D(off)  
C
D(on)  
Room  
Room  
Room  
31  
30  
71  
e
Drain Off Capacitance  
f = 1 MHz  
pF  
e
Channel On Capacitance  
Power Supplies  
Room  
Full  
0.02  
-0.002  
-0.002  
1
5
Positive Supply Current  
I+  
I-  
Room  
Full  
-1  
-5  
Negative Supply Current  
Ground Current  
V
= 0 or 12 V  
A
IN  
Room  
Full  
-1  
-5  
I
GND  
Document Number: 70679  
S-21424Rev. C, 26-Aug-02  
www.vishay.com  
2
DG9421/DG9422  
Vishay Siliconix  
a
SPECIFICATIONS (DUAL SUPPLY "5 V)  
Limits  
Test Conditions Unless Specified  
-40 to 85_C  
V+ = 5 V, V- = -5 V  
f
V
= 2.4 V, 0.8 V  
Parameter  
Analog Switch  
Symbol  
Tempb  
Mind  
Typc  
Maxd  
Unit  
IN  
e
Analog Signal Range  
V
Full  
-5  
5
V
ANALOG  
V+ = 5 V, V- = -5 V  
= 5 mA, V = "3.5 V  
Room  
Full  
2.2  
3.2  
3.6  
Drain-Source On-Resistance  
r
DS(on)  
I
S
D
Room  
Full  
-1  
-10  
1
10  
I
I
S(off)  
V+ = 5.5 V, V- = -5.5 V  
= "4.5 V, V = #4.5 V  
g
Switch Off Leakage Current  
V
D
S
Room  
Full  
-1  
-10  
1
10  
nA  
D(off)  
V+ = 5.5 V, V- = -5.5 V  
= V = "4.5 V  
Room  
Full  
-1  
10  
1
10  
g
Channel On Leakage Current  
I
D(on)  
V
S
D
Digital Control  
e
Input Current, V Low  
I
V
V
Under Test = 0.8 V  
Under Test = 2.4 V  
Full  
Full  
-1  
-1  
0.02  
0.02  
1
1
IN  
IL  
IN  
IN  
A  
e
Input Current, V High  
I
IH  
IN  
Dynamic Characteristics  
Room  
Full  
38  
45  
63  
68  
Turn-On Time  
t
ON  
R
= 300 , C = 35 pF  
L
= "3.5 V See Figure 2  
L
ns  
V
Room  
Full  
83  
97  
S
Turn-Off Time  
t
OFF  
e
Charge Injection  
Q
V
= 0 V, R = 0 , C = 1 nF  
Room  
Room  
0.6  
-57  
pC  
dB  
g
g
L
R
L
= 50 , C = 5 pF,  
f = 1 MHz  
L
e
Off Isolation  
OIRR  
e
Source Off Capacitance  
C
S(off)  
C
D(off)  
C
D(on)  
Room  
Room  
Room  
32  
31  
71  
e
Drain Off Capacitance  
f = 1 MHz  
pF  
e
Channel On Capacitance  
Power Supplies  
Room  
Full  
0.03  
-0.002  
-0.002  
1
5
e
Positive Supply Current  
I+  
I-  
Room  
Full  
-1  
-5  
e
Negative Supply Current  
V
= 0 or 5 V  
A
IN  
Room  
Full  
-1  
-5  
e
Ground Current  
I
GND  
a
SPECIFICATIONS (SINGLE SUPPLY 5 V)  
Limits  
Test Conditions Unless Specified  
-40 to 85_C  
V+ = 5 V, V- = 0 V  
f
V
= 2.4 V, 0.8 V  
Parameter  
Symbol  
Tempb  
Mind  
Typc  
Maxd  
Unit  
IN  
Analog Switch  
e
Analog Signal Range  
V
Full  
0
5
V
ANALOG  
V+ = 4.5 V, I = 5 mA  
Room  
Full  
3.6  
6.0  
6.6  
S
Drain-Source On-Resistance  
r
DS(on)  
V
= 1 V, 3.5 V  
D
Dynamic Characteristics  
Room  
Hot  
43  
30  
67  
74  
e
Turn-On Time  
t
ON  
R
V
= 300 , C = 35 pF  
= 3.5 V, See Figure 2  
L
L
ns  
Room  
Hot  
67  
80  
S
e
Turn-Off Time  
t
OFF  
e
Charge Injection  
Q
V
= 0 V, R = 0 , C = 1 nF  
Room  
0.3  
pC  
g
g
L
Document Number: 70679  
S-21424Rev. C, 26-Aug-02  
www.vishay.com  
3
DG9421/DG9422  
Vishay Siliconix  
a
SPECIFICATIONS (SINGLE SUPPLY 5 V)  
Limits  
Test Conditions Unless Specified  
-40 to 85_C  
V+ = 5 V, V- = 0 V  
f
V
= 2.4 V, 0.8 V  
IN  
Parameter  
Power Supplies  
Positive Supply Current  
Symbol  
Tempb  
Mind  
Typc  
Maxd  
Unit  
Room  
Hot  
0.02  
-0.002  
-0.002  
1
5
e
I+  
I-  
Room  
Hot  
-1  
-5  
e
Negative Supply Current  
V
IN  
= 0 or 5 V  
A  
Room  
Hot  
-1  
-5  
e
Ground Current  
I
GND  
a
SPECIFICATIONS (SINGLE SUPPLY 3 V)  
Limits  
Test Conditions Unless Specified  
-40 to 85_C  
V+ = 3 V, V- = 0 V  
f
V
= 0.4 V  
Parameter  
Analog Switch  
Symbol  
Tempb  
Mind  
Typc  
Maxd  
Unit  
IN  
e
Analog Signal Range  
V
Full  
0
3
V
ANALOG  
V+ = 2.7 V, V- = 0 V  
Room  
Full  
7.3  
8.8  
10.1  
Drain-Source On-Resistance  
r
DS(on)  
I
S
= 5 mA, V = 0.5, 2.2 V  
D
Room  
Full  
-1  
-10  
1
10  
I
I
S(off)  
V+ = 3.3 V, V- = 0 V  
g
Switch Off Leakage Current  
V
= 1, 2 V, V = 2, 1 V  
D
S
Room  
Full  
-1  
-10  
1
10  
nA  
D(off)  
D(on)  
V+ = 3.3 V, V- = 0 V  
= V = 1, 2 V  
Room  
Full  
-1  
-10  
1
10  
g
Channel On Leakage Current  
I
V
S
D
Digital Control  
e
Input Current, V Low  
I
V
Under Test = 0.4 V  
Under Test = 2.4 V  
Full  
Full  
-1  
-1  
0.02  
0.02  
1
1
IN  
IL  
IN  
IN  
A
e
Input Current, V High  
I
IH  
V
IN  
Dynamic Characteristics  
Room  
Full  
90  
32  
110  
125  
Turn-On Time  
t
ON  
R
= 300 , C = 35 pF  
= 1.5 V See Figure 2  
L
L
ns  
V
Room  
Full  
84  
99  
S
Turn-Off Time  
t
OFF  
e
Charge Injection  
Q
V
= 0 V, R = 0 , C = 1 nF  
Room  
Room  
0.3  
-60  
pC  
dB  
g
g
L
R
L
= 50 , C = 5 pF,  
f = 1 MHz  
L
e
Off Isolation  
OIRR  
e
Source Off Capacitance  
C
S(off)  
C
D(off)  
C
D(on)  
Room  
Room  
Room  
35  
34  
77  
e
Drain Off Capacitance  
f = 1 MHz  
pF  
e
Channel On Capacitance  
Notes:  
a. Refer to PROCESS OPTION FLOWCHART.  
b. Room = 25_C, Full = as determined by the operating temperature suffix.  
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.  
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.  
e. Guaranteed by design, not subject to production test.  
f.  
V
= input voltage to perform proper function.  
IN  
g. Leakage parameters are guaranteed by worst case test conditions and not subject to test.  
Document Number: 70679  
S-21424Rev. C, 26-Aug-02  
www.vishay.com  
4
DG9421/DG9422  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
r
vs. V  
and Supply Voltage  
r vs. Analog Voltage and Temperature  
ON  
ON  
COM  
10  
10  
8
T = 25_C  
I = 5 mA  
S
I
= 5 mA  
V+ = 3.0 V  
A
S
8
V+ = 3.0 V  
B
6
6
V+ = 5.0 V  
A
C
V+ = 5.0 V  
B
4
4
C
V+ = 10.8 V  
2
2
A = 85_C  
B = 25_C  
C = -40_C  
V+ = 12 V  
10  
0
0
0
2
4
6
8
12  
0
1
2
3
4
5
V
- Analog Voltage (V)  
V
- Analog Voltage (V)  
COM  
COM  
r
vs. Analog Voltage and Temperature  
Supply Current vs. Temperature  
ON  
1000  
8
6
4
2
0
V" = "5 V  
= 5 mA  
V+ = "5 V  
= 0 V  
I
S
V
IN  
100  
A
B
C
A = 85_C  
B = 25_C  
C = -40_C  
10  
-60  
-5  
-3  
-1  
1
3
5
-40  
-20  
0
20  
40  
60  
80  
100  
Drain Voltage (V)  
Temperature (_C)  
Supply Current vs. Input Switching Frequency  
Leakage Current vs. Temperature  
10 m  
1 m  
100  
V+ = 5 V  
V- = 0 V  
100  
10  
10  
I
(on)  
1
I
(off)  
100 n  
10 n  
1
-60  
10  
100  
1 K  
10 K  
100 K  
1 M  
10 M  
-40  
-20  
0
20  
40  
60  
80  
100  
Input Switching Frequences (Hz)  
Temperature (_C)  
Document Number: 70679  
S-21424Rev. C, 26-Aug-02  
www.vishay.com  
5
DG9421/DG9422  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
Leakage Current vs. Temperature  
Leakage vs. Analog Voltage  
100  
100  
60  
V+ = "5 V  
V+ = 5 V  
V- = 0 V  
10  
I
/I  
NO(off) NC(off)  
20  
I
(on)  
I
COM(off)  
-20  
-60  
-100  
I
1
COM(on)  
I
(off)  
0.1  
-60  
-40  
-20  
0
20  
40  
60  
80  
100  
0
1
2
3
4
5
V
, V , V  
COM NO NC  
- Analog Voltage (V)  
Temperature (_C)  
Switching Time vs. Temperature and  
Supply Voltage (DG9421)  
Leakage vs. Analog Voltage  
120  
100  
80  
60  
40  
20  
0
400  
300  
200  
100  
0
V+ = 12 V  
V- = 0 V  
t
V+ = 3 V  
ON  
I
COM(on)  
t
V+ = 5 V  
ON  
-100  
-200  
-300  
-400  
t
V+ = 5 V  
OFF  
t
V+ = 3 V  
OFF  
I
/I  
NO(off) NC(off)  
t
V+ = 12 V  
I
t
V+ = 12 V  
OFF  
COM(off)  
ON  
-60  
-40  
-20  
0
20  
40  
60  
80  
100  
0
2
4
6
8
10  
12  
V
, V , V  
COM NO NC  
- Analog Voltage (V)  
Temperature (_C)  
Insertion Loss, Off Isolation and Crosstalk  
vs. Frequency  
Switching Threshold vs. Supply Voltage  
2.5  
10  
0
Loss  
V+ = 3 V  
2.0  
1.5  
1.0  
0.5  
0.0  
-10  
-20  
R
L
= 50 ꢀ  
-30  
-40  
-50  
OIRR  
-60  
-70  
-80  
-90  
0
2
4
6
8
10  
12  
14  
100 K  
1 M  
10 M  
100 M  
1 G  
Frequency (MHz)  
V+ - Supplu Voltage (V)  
Document Number: 70679  
S-21424Rev. C, 26-Aug-02  
www.vishay.com  
6
DG9421/DG9422  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
Charge Injection vs. Analog Voltage  
8
6
4
V+ = 5 V  
2
0
V+ = 12 V  
V = "5 V  
-2  
V+ = 3 V  
-4  
-6  
-8  
-6  
-4  
-2  
0
2
4
6
8
10  
12  
V
- Analog Voltage (V)  
COM  
SCHEMATIC DIAGRAM (TYPICAL CHANNEL)  
V+  
NC/NO  
V-  
Level  
Shift/  
V
IN  
Drive  
V+  
GND  
V-  
COM  
FIGURE 1.  
TEST CIRCUITS  
V+  
V+  
V
t <5 ns  
r
t <5 ns  
f
NC/NO  
0 V  
Logic  
Input  
50%  
t
S
D
OFF  
V
S
V
O
Switch  
Input*  
V
S
V
O
IN  
GND  
90%  
R
300  
C
L
35 pF  
L
V-  
V-  
0 V  
Switch  
Output  
t
ON  
90%  
V
-V  
O
S
Switch  
Input*  
C
L
(includes fixture and stray capacitance)  
R
L
Note: Logic input waveform is inverted for switches that  
have the opposite logic sense control  
V
= V  
S
O
R
L
+ r  
DS(on)  
FIGURE 2. Switching Time  
Document Number: 70679  
S-21424Rev. C, 26-Aug-02  
www.vishay.com  
7
DG9421/DG9422  
Vishay Siliconix  
TEST CIRCUITS  
V
O
V+  
V+  
V
O
X
IN  
R
g
S
D
OFF  
OFF  
ON  
ON  
OFF  
OFF  
V
O
IN  
C
10 nF  
V
g
L
3 V  
V-  
V-  
GND  
IN  
X
Q = V x C  
O
L
IN dependent on switch configuration Input polarity determined  
X
by sense of switch.  
FIGURE 3. Charge Injection  
V+  
C
V+  
S
D
V
1
1
2
S
R
g
= 50  
50  
IN  
1
0V, 2.4 V  
S
D
2
V
NC  
O
R
L
IN  
2
0V, 2.4 V  
GND  
V-  
V-  
C
V
V
S
X
Isolation = 20 log  
TALK  
O
C = RF bypass  
FIGURE 4. Crosstalk  
V+  
V+  
C
V+  
V+  
C
V
O
S
D
V
S
R
g
= 50  
S
D
R
50  
L
IN  
0V, 2.4 V  
Meter  
IN  
HP4192A  
Impedance  
Analyzer  
GND  
V-  
V-  
C
0 V, 2.4 V  
or Equivalent  
GND  
V-  
V-  
C
V
V
S
Off Isolation = 20 log  
C = RF Bypass  
O
FIGURE 5. Off Isolation  
FIGURE 6. Source/Drain Capacitances  
Document Number: 70679  
S-21424Rev. C, 26-Aug-02  
www.vishay.com  
8

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DG9421DV

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DG9421DV-E3

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DG9421DV-T1

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DG9422

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DG9422DV

Precision Low-Voltage, Low-Glitch CMOS Analog Switches
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DG9422DV-T1

Precision Low-Voltage, Low-Glitch CMOS Analog Switches
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DG9422DV-T1-E3

Precision Low-Voltage, Low-Glitch CMOS Analog Switches
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DG9424

Low-Voltage, Dual Supply, Low rON, Quad SPST Analog Switches
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DG9424DQ

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