DG9422DV
更新时间：2024-09-18 02:07:11
品牌：VISHAY
描述：Precision Low-Voltage, Low-Glitch CMOS Analog Switches
概述
规格参数
数据手册DG9422DV 概述
Precision Low-Voltage, Low-Glitch CMOS Analog Switches 精密，低电压，低毛刺CMOS模拟开关 复用器或开关
DG9422DV 规格参数
| 是否无铅： | 含铅 | 是否Rohs认证： | 不符合 |
| 生命周期： | Transferred | 零件包装代码： | TSOP |
| 包装说明： | TSOP, TSOP6,.11,37 | 针数： | 6 |
| Reach Compliance Code： | unknown | 风险等级： | 5.61 |
| Is Samacsys： | N | 模拟集成电路 - 其他类型： | SPST |
| JESD-30 代码： | R-PDSO-G6 | JESD-609代码： | e0 |
| 正常位置： | NO | 功能数量： | 1 |
| 端子数量： | 6 | 最大通态电阻 (Ron)： | 10.1 Ω |
| 最高工作温度： | 85 °C | 最低工作温度： | -40 °C |
| 封装主体材料： | PLASTIC/EPOXY | 封装代码： | TSOP |
| 封装等效代码： | TSOP6,.11,37 | 封装形状： | RECTANGULAR |
| 封装形式： | SMALL OUTLINE, THIN PROFILE | 电源： | 3/12/+-5 V |
| 认证状态： | Not Qualified | 子类别： | Multiplexer or Switches |
| 表面贴装： | YES | 最长接通时间： | 110 ns |
| 切换： | BREAK-BEFORE-MAKE | 技术： | BICMOS |
| 温度等级： | INDUSTRIAL | 端子面层： | Tin/Lead (Sn/Pb) |
| 端子形式： | GULL WING | 端子节距： | 0.95 mm |
| 端子位置： | DUAL | Base Number Matches： | 1 |
DG9422DV 数据手册
通过下载DG9422DV数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载DG9421/DG9422
Vishay Siliconix
Precision Low-Voltage, Low-Glitch CMOS Analog Switches
FEATURES
BENEFITS
APPLICATIONS
D 2.7- thru 12-V Single Supply or
D High Accuracy
D Automatic Test Equipment
D Data Acquisition
"2.7- thru "6-Dual Supply
D High Speed, Low Glitch
D Single and Dual Supply Capability
D Low rON in Small TSOP Package
D Low Leakage
D Low On-Resistance—rDS(on)
2.0 ꢀ @ 12 V
:
D XDSL and DSLAM
D PBX Systems
D Fast Switching—tON: 28 ns
D Reed Relay Replacement
D Audio and Video Signal Routing
—tOFF: 22 ns
D Low Power Consumption
D TTL and Low Voltage Logic
D Low Leakage: 10 pA (typ)
D u2000-V ESD Protection
DESCRIPTION
Using BiCMOS wafer fabrication technology allows the
DG9421/DG9422 to operate on single and dual supplies.
than 1 pC) and is well suited for applications where signal
switching accuracy, low noise and low distortion is critical.
Designed for optimal performance at single 5 V and dual
"5 V, the DG9421/9422 combine low and flat on-resistance
(3 ꢀ ), fast speed (tON = 38 ns) and low charge injection (less
The DG9421 and DG9422 respond to opposite control logic as
shown in the Truth Table.
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
TRUTH TABLE
TSOP-6
Logic
DG9421
DG9422
V+
COM
v-
IN
1
2
3
6
5
4
0
1
ON
OFF
ON
NC/NO
GND
OFF
Logic “0” v 0.8 V
Logic “1” w 2.4 V
Top View
Switches Shown for Logic “0” Input
Device Marking:
DG9421DV = 4Exxx
DG9422DV = 4Fxxx
ORDERING INFORMATION
DG9421DV
-40 to 85_C
6-Pin TSOP
DG9422DV
Document Number: 70679
S-21424—Rev. C, 26-Aug-02
www.vishay.com
1
DG9421/DG9422
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
V+ to V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 TO 13 V
GND to V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 V
Power Dissipation (Package)b
6-Pin TSOP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 570 mW
c
V
a
, V , V . . . . . . . . . -0.3 to (V+ +0.3 V) or 50 mA, whichever occurs first
Notes:
IN
S
D
a. Signals on S , D , or IN exceeding V+ or V- will be clamped by internal
X
X
X
Continuous Current (Any Terminal) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Peak Current, S or D (Pulsed 1 ms, 10% Duty Cycle) . . . . . . . . . . . . 100 mA
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 150_C
diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 7 mW/_C above 25_C
a
SPECIFICATIONS (SINGLE SUPPLY 12 V)
Limits
Test Conditions Unless Specified
-40 to 85_C
V+ = 12 V, V- = 0 V
f
V
IN
= 2.4 V, 0.8 V
Parameter
Analog Switch
Symbol
Tempb
Mind
Typc
Maxd
Unit
a
Analog Signal Range
V
Full
0
12
V
ANALOG
Drain-Source
On-Resistance
V+ = 10.8 V, V- = 0 V
= 5 mA, V = 2/9 V
Room
Full
2.0
3
3.4
r
ꢀ
DS(on)
I
S
D
Room
Full
-1
-10
1
10
I
S(off)
Switch Off
Leakage Current
V
= 1/11 V, V = 11/1 V
S
D
Room
Full
-1
-10
1
10
I
nA
D(off)
D(on)
Channel On
Leakage Current
Room
Full
-1
-10
1
10
I
V = V = 11/1 V
S D
Digital Control
Input Current, V Low
I
V
Under Test = 0.8 V
Under Test = 2.4 V
Full
Full
-1
-1
0.02
0.02
1
1
IN
IL
IN
IN
ꢁ
A
Input Current, V High
IN
I
IH
V
Dynamic Characteristics
Room
Full
20
25
45
49
e
Turn-On Time
t
ON
R
V
= 300 ꢀ , C = 35 pF
L
L
ns
= 5 V See Figure 2
Room
Full
47
59
S
e
Turn-Off Time
t
OFF
e
Charge Injection
Q
V
= 0 V, R = 0 ꢀ , C = 1 nF
Room
Room
0.8
-60
pC
dB
g
g
L
R
L
= 50 ꢀ , C = 5 pF,
f = 1 MHz
L
e
Off Isolation
OIRR
e
Source Off Capacitance
C
S(off)
C
D(off)
C
D(on)
Room
Room
Room
31
30
71
e
Drain Off Capacitance
f = 1 MHz
pF
e
Channel On Capacitance
Power Supplies
Room
Full
0.02
-0.002
-0.002
1
5
Positive Supply Current
I+
I-
Room
Full
-1
-5
Negative Supply Current
Ground Current
V
= 0 or 12 V
ꢁ
A
IN
Room
Full
-1
-5
I
GND
Document Number: 70679
S-21424—Rev. C, 26-Aug-02
www.vishay.com
2
DG9421/DG9422
Vishay Siliconix
a
SPECIFICATIONS (DUAL SUPPLY "5 V)
Limits
Test Conditions Unless Specified
-40 to 85_C
V+ = 5 V, V- = -5 V
f
V
= 2.4 V, 0.8 V
Parameter
Analog Switch
Symbol
Tempb
Mind
Typc
Maxd
Unit
IN
e
Analog Signal Range
V
Full
-5
5
V
ANALOG
V+ = 5 V, V- = -5 V
= 5 mA, V = "3.5 V
Room
Full
2.2
3.2
3.6
Drain-Source On-Resistance
r
ꢀ
DS(on)
I
S
D
Room
Full
-1
-10
1
10
I
I
S(off)
V+ = 5.5 V, V- = -5.5 V
= "4.5 V, V = #4.5 V
g
Switch Off Leakage Current
V
D
S
Room
Full
-1
-10
1
10
nA
D(off)
V+ = 5.5 V, V- = -5.5 V
= V = "4.5 V
Room
Full
-1
10
1
10
g
Channel On Leakage Current
I
D(on)
V
S
D
Digital Control
e
Input Current, V Low
I
V
V
Under Test = 0.8 V
Under Test = 2.4 V
Full
Full
-1
-1
0.02
0.02
1
1
IN
IL
IN
IN
ꢁ
A
e
Input Current, V High
I
IH
IN
Dynamic Characteristics
Room
Full
38
45
63
68
Turn-On Time
t
ON
R
= 300 ꢀ , C = 35 pF
L
= "3.5 V See Figure 2
L
ns
V
Room
Full
83
97
S
Turn-Off Time
t
OFF
e
Charge Injection
Q
V
= 0 V, R = 0 ꢀ , C = 1 nF
Room
Room
0.6
-57
pC
dB
g
g
L
R
L
= 50 ꢀ , C = 5 pF,
f = 1 MHz
L
e
Off Isolation
OIRR
e
Source Off Capacitance
C
S(off)
C
D(off)
C
D(on)
Room
Room
Room
32
31
71
e
Drain Off Capacitance
f = 1 MHz
pF
e
Channel On Capacitance
Power Supplies
Room
Full
0.03
-0.002
-0.002
1
5
e
Positive Supply Current
I+
I-
Room
Full
-1
-5
e
Negative Supply Current
V
= 0 or 5 V
ꢁA
IN
Room
Full
-1
-5
e
Ground Current
I
GND
a
SPECIFICATIONS (SINGLE SUPPLY 5 V)
Limits
Test Conditions Unless Specified
-40 to 85_C
V+ = 5 V, V- = 0 V
f
V
= 2.4 V, 0.8 V
Parameter
Symbol
Tempb
Mind
Typc
Maxd
Unit
IN
Analog Switch
e
Analog Signal Range
V
Full
0
5
V
ANALOG
V+ = 4.5 V, I = 5 mA
Room
Full
3.6
6.0
6.6
S
Drain-Source On-Resistance
r
ꢀ
DS(on)
V
= 1 V, 3.5 V
D
Dynamic Characteristics
Room
Hot
43
30
67
74
e
Turn-On Time
t
ON
R
V
= 300 ꢀ , C = 35 pF
= 3.5 V, See Figure 2
L
L
ns
Room
Hot
67
80
S
e
Turn-Off Time
t
OFF
e
Charge Injection
Q
V
= 0 V, R = 0 ꢀ , C = 1 nF
Room
0.3
pC
g
g
L
Document Number: 70679
S-21424—Rev. C, 26-Aug-02
www.vishay.com
3
DG9421/DG9422
Vishay Siliconix
a
SPECIFICATIONS (SINGLE SUPPLY 5 V)
Limits
Test Conditions Unless Specified
-40 to 85_C
V+ = 5 V, V- = 0 V
f
V
= 2.4 V, 0.8 V
IN
Parameter
Power Supplies
Positive Supply Current
Symbol
Tempb
Mind
Typc
Maxd
Unit
Room
Hot
0.02
-0.002
-0.002
1
5
e
I+
I-
Room
Hot
-1
-5
e
Negative Supply Current
V
IN
= 0 or 5 V
ꢁA
Room
Hot
-1
-5
e
Ground Current
I
GND
a
SPECIFICATIONS (SINGLE SUPPLY 3 V)
Limits
Test Conditions Unless Specified
-40 to 85_C
V+ = 3 V, V- = 0 V
f
V
= 0.4 V
Parameter
Analog Switch
Symbol
Tempb
Mind
Typc
Maxd
Unit
IN
e
Analog Signal Range
V
Full
0
3
V
ANALOG
V+ = 2.7 V, V- = 0 V
Room
Full
7.3
8.8
10.1
Drain-Source On-Resistance
r
ꢀ
DS(on)
I
S
= 5 mA, V = 0.5, 2.2 V
D
Room
Full
-1
-10
1
10
I
I
S(off)
V+ = 3.3 V, V- = 0 V
g
Switch Off Leakage Current
V
= 1, 2 V, V = 2, 1 V
D
S
Room
Full
-1
-10
1
10
nA
D(off)
D(on)
V+ = 3.3 V, V- = 0 V
= V = 1, 2 V
Room
Full
-1
-10
1
10
g
Channel On Leakage Current
I
V
S
D
Digital Control
e
Input Current, V Low
I
V
Under Test = 0.4 V
Under Test = 2.4 V
Full
Full
-1
-1
0.02
0.02
1
1
IN
IL
IN
IN
ꢁ
A
e
Input Current, V High
I
IH
V
IN
Dynamic Characteristics
Room
Full
90
32
110
125
Turn-On Time
t
ON
R
= 300 ꢀ , C = 35 pF
= 1.5 V See Figure 2
L
L
ns
V
Room
Full
84
99
S
Turn-Off Time
t
OFF
e
Charge Injection
Q
V
= 0 V, R = 0 ꢀ , C = 1 nF
Room
Room
0.3
-60
pC
dB
g
g
L
R
L
= 50 ꢀ , C = 5 pF,
f = 1 MHz
L
e
Off Isolation
OIRR
e
Source Off Capacitance
C
S(off)
C
D(off)
C
D(on)
Room
Room
Room
35
34
77
e
Drain Off Capacitance
f = 1 MHz
pF
e
Channel On Capacitance
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25_C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f.
V
= input voltage to perform proper function.
IN
g. Leakage parameters are guaranteed by worst case test conditions and not subject to test.
Document Number: 70679
S-21424—Rev. C, 26-Aug-02
www.vishay.com
4
DG9421/DG9422
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
r
vs. V
and Supply Voltage
r vs. Analog Voltage and Temperature
ON
ON
COM
10
10
8
T = 25_C
I = 5 mA
S
I
= 5 mA
V+ = 3.0 V
A
S
8
V+ = 3.0 V
B
6
6
V+ = 5.0 V
A
C
V+ = 5.0 V
B
4
4
C
V+ = 10.8 V
2
2
A = 85_C
B = 25_C
C = -40_C
V+ = 12 V
10
0
0
0
2
4
6
8
12
0
1
2
3
4
5
V
- Analog Voltage (V)
V
- Analog Voltage (V)
COM
COM
r
vs. Analog Voltage and Temperature
Supply Current vs. Temperature
ON
1000
8
6
4
2
0
V" = "5 V
= 5 mA
V+ = "5 V
= 0 V
I
S
V
IN
100
A
B
C
A = 85_C
B = 25_C
C = -40_C
10
-60
-5
-3
-1
1
3
5
-40
-20
0
20
40
60
80
100
Drain Voltage (V)
Temperature (_C)
Supply Current vs. Input Switching Frequency
Leakage Current vs. Temperature
10 m
1 m
100
V+ = 5 V
V- = 0 V
100 ꢁ
10 ꢁ
10
I
(on)
1 ꢁ
I
(off)
100 n
1
-60
10 n
10
100
1 K
10 K
100 K
1 M
10 M
-40
-20
0
20
40
60
80
100
Input Switching Frequences (Hz)
Temperature (_C)
Document Number: 70679
S-21424—Rev. C, 26-Aug-02
www.vishay.com
5
DG9421/DG9422
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Leakage Current vs. Temperature
Leakage vs. Analog Voltage
100
100
60
V+ = "5 V
V+ = 5 V
V- = 0 V
10
I
/I
NO(off) NC(off)
20
I
(on)
I
COM(off)
-20
-60
-100
I
1
COM(on)
I
(off)
0.1
-60
-40
-20
0
20
40
60
80
100
0
1
2
3
4
5
V
, V , V
COM NO NC
- Analog Voltage (V)
Temperature (_C)
Switching Time vs. Temperature and
Supply Voltage (DG9421)
Leakage vs. Analog Voltage
120
100
80
60
40
20
0
400
300
200
100
0
V+ = 12 V
V- = 0 V
t
V+ = 3 V
ON
I
COM(on)
t
V+ = 5 V
ON
-100
-200
-300
-400
t
V+ = 5 V
OFF
t
V+ = 3 V
OFF
I
/I
NO(off) NC(off)
t
V+ = 12 V
I
t
V+ = 12 V
OFF
COM(off)
ON
-60
-40
-20
0
20
40
60
80
100
0
2
4
6
8
10
12
V
, V , V
COM NO NC
- Analog Voltage (V)
Temperature (_C)
Insertion Loss, Off Isolation and Crosstalk
vs. Frequency
Switching Threshold vs. Supply Voltage
2.5
10
0
Loss
V+ = 3 V
2.0
1.5
1.0
0.5
0.0
-10
-20
R
L
= 50 ꢀ
-30
-40
-50
OIRR
-60
-70
-80
-90
0
2
4
6
8
10
12
14
100 K
1 M
10 M
100 M
1 G
Frequency (MHz)
V+ - Supplu Voltage (V)
Document Number: 70679
S-21424—Rev. C, 26-Aug-02
www.vishay.com
6
DG9421/DG9422
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Charge Injection vs. Analog Voltage
8
6
4
V+ = 5 V
2
0
V+ = 12 V
V = "5 V
-2
V+ = 3 V
-4
-6
-8
-6
-4
-2
0
2
4
6
8
10
12
V
- Analog Voltage (V)
COM
SCHEMATIC DIAGRAM (TYPICAL CHANNEL)
V+
NC/NO
V-
Level
Shift/
V
IN
Drive
V+
GND
V-
COM
FIGURE 1.
TEST CIRCUITS
V+
V+
V
t <5 ns
r
t <5 ns
f
NC/NO
0 V
Logic
Input
50%
t
S
D
OFF
V
S
V
O
Switch
Input*
V
S
V
O
IN
GND
90%
R
300 ꢀ
C
L
35 pF
L
V-
V-
0 V
Switch
Output
t
ON
90%
V
-V
O
S
Switch
Input*
C
L
(includes fixture and stray capacitance)
R
L
Note: Logic input waveform is inverted for switches that
have the opposite logic sense control
V
= V
S
O
R
L
+ r
DS(on)
FIGURE 2. Switching Time
Document Number: 70679
S-21424—Rev. C, 26-Aug-02
www.vishay.com
7
DG9421/DG9422
Vishay Siliconix
TEST CIRCUITS
ꢂ V
O
V+
V+
V
O
X
IN
R
g
S
D
OFF
OFF
ON
ON
OFF
OFF
V
O
IN
C
10 nF
V
g
L
3 V
V-
V-
GND
IN
X
Q = ꢂ V x C
O
L
IN dependent on switch configuration Input polarity determined
X
by sense of switch.
FIGURE 3. Charge Injection
V+
C
V+
S
D
V
1
1
2
S
R
g
= 50 ꢀ
50 ꢀ
IN
1
0V, 2.4 V
NC
S
D
2
V
O
R
L
IN
2
0V, 2.4 V
GND
V-
V-
C
V
V
S
X
Isolation = 20 log
TALK
O
C = RF bypass
FIGURE 4. Crosstalk
V+
V+
C
V+
V+
C
V
O
S
D
V
S
R
g
= 50 ꢀ
S
D
R
50 ꢀ
L
IN
0V, 2.4 V
Meter
IN
HP4192A
Impedance
Analyzer
GND
V-
V-
C
0 V, 2.4 V
or Equivalent
GND
V-
V-
C
V
V
S
Off Isolation = 20 log
C = RF Bypass
O
FIGURE 5. Off Isolation
FIGURE 6. Source/Drain Capacitances
Document Number: 70679
S-21424—Rev. C, 26-Aug-02
www.vishay.com
8
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| DG9424DQ | VISHAY | Low-Voltage, Dual Supply, Low rON, Quad SPST Analog Switches | 获取价格 |
|
| DG9424DQ-T1-E3 | VISHAY | Analog Switch Quad SPST 16-Pin TSSOP T/R | 获取价格 |
|
| DG9424E | VISHAY | On Resistance, 5 V, 12 V, and 3 V Quad SPST Switches | 获取价格 |
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| DG9424EDQ-T1-GE3 | VISHAY | On Resistance, 5 V, 12 V, and 3 V Quad SPST Switches | 获取价格 |
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| DG9424_08 | VISHAY | Low-Voltage, Dual Supply, Low rON, Quad SPST Analog Switches | 获取价格 |
|
| DG9424_09 | VISHAY | Low-Voltage, Dual Supply, Low RON, Quad SPST Analog Switches | 获取价格 |
|
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