DG9431DV-T1-E3 [VISHAY]

Low-Voltage Single SPDT Analog Switch; 低电压单SPDT模拟开关
DG9431DV-T1-E3
型号: DG9431DV-T1-E3
厂家: VISHAY    VISHAY
描述:

Low-Voltage Single SPDT Analog Switch
低电压单SPDT模拟开关

开关 光电二极管
文件: 总8页 (文件大小:110K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DG9431  
Vishay Siliconix  
Low-Voltage Single SPDT Analog Switch  
DESCRIPTION  
FEATURES  
The DG9431 is a single-pole/double-throw monolithic CMOS  
analog device designed for high performance switching of  
analog signals. Combining low power, high speed  
(tON: 35 ns, tOFF: 20 ns), low on-resistance (rDS(on): 20 Ω)  
and small physical size (TSOP-6), the DG9431 is ideal for  
portable and battery powered applications requiring high  
performance and efficient use of board space.  
Low Voltage Operation (+ 2.7 to + 5 V)  
Pb-free  
Low On-Resistance - rDS(on): 20 Ω  
Fast Switching - tON: 35 ns, tOFF: 20 ns  
Low Leakage - ICOM(on): 200-pA max  
Low Charge Injection - QINJ: 1 pC  
Low Power Consumption  
Available  
RoHS*  
COMPLIANT  
TTL/CMOS Compatible  
ESD Protection > 2000 V (Method 3015.7)  
Available in TSOP-6 and SOIC-8  
Lead (Pb)-Free Version is RoHS Compliant  
The DG9431 is built on Vishay Siliconix’s low voltage  
BCD-15 process. Minimum ESD protection, per Method  
3015.7, is 2000 V. An epitaxial layer prevents latchup.  
Break-before -make is guaranteed for DG9431.  
BENEFITS  
Each switch conducts equally well in both directions when  
on, and blocks up to the power supply level when off.  
Reduced Power Consumption  
Simple Logic Interface  
High Accuracy  
As a committed partner to the community and the  
environment, Vishay Siliconix manufactures this product  
with the lead (Pb)-free device terminations. For analog  
switching products manufactured with 100 % matte tin  
device terminations, the lead (Pb)-free “-E3” suffix is being  
used as a designator.  
Reduce Board Space (TSOP-6)  
APPLICATIONS  
Battery Operated Systems  
Portable Test Equipment  
Sample and Hold Circuits  
Cellular Phones  
Communication Systems  
Military Radio  
PBX, PABX Guidance and Control Systems  
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION  
TSOP-6  
TRUTH TABLE  
Logic  
NC  
ON  
NO  
OFF  
ON  
IN  
V+  
NO  
1
2
3
6
5
4
0
1
COM  
NC  
OFF  
GND  
Logic "0" 0.8 V  
Logic "1" 2.4 V  
Top View  
SOIC-8  
ORDERING INFORMATION  
NO  
V+  
IN  
*
Temp Range Package  
Part Number  
1
8
DG9431DV-T1  
DG9431DV-T1-E3 (Lead (Pb)-free)  
COM  
NC  
2
3
4
7
6
5
TSOP-6  
- 40 to 85 °C  
DG9431DY-T1  
DG9431DY-T1-E3 (Lead (Pb)-free)  
SOIC-8  
GND  
*
Top View  
*Not Connected  
* Pb containing terminations are not RoHS compliant, exemptions may apply  
Document Number: 70831  
S-71009–Rev. D, 14-May-07  
www.vishay.com  
1
DG9431  
Vishay Siliconix  
ABSOLUTE MAXIMUM RATINGS  
Parameter  
Limit  
- 0.3 to + 13  
- 0.3 to (V+ + 0.3)  
20  
Unit  
Reference V+ to GND  
IN, COM, NC, NOa  
V
Continuous Current (Any Terminal)  
Peak Current (Pulsed at 1 ms, 10 % duty cycle)  
ESD (Method 3015.7)  
mA  
40  
> 2000  
V
Storage Temperature (D Suffix)  
Power Dissipation (Packages)b  
- 65 to 125  
400  
°C  
8-Pin Narrow Body SOICc  
mW  
Notes:  
a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.  
b. All leads welded or soldered to PC Board.  
c. Derate 6.5 mW/°C above 75 °C.  
SPECIFICATIONS (V+ = 3 V)  
D Suffix  
Test Conditions  
- 40 to 85 °C  
Unless Otherwise Specified  
V+ = 3 V, 10 %, VIN = 0.8 or 2.4 Ve  
Parameter  
Symbol  
Tempa  
Minc  
Typb  
Maxc Unit  
Analog Switch  
Analog Signal Ranged  
VANALOG  
rDS(on)  
Full  
0
3
V
VNO or VNC = 1.5 V, V+ = 2.7 V  
ICOM = 5 mA  
Room  
Full  
30  
50  
80  
Drain-Source On–Resistance  
rDS(on)Matchd  
Ω
ΔrDS(on)  
VNO or VNC = 1.5 V  
Room  
Room  
0.4  
4
2
8
rDS(on)  
Flatness  
DS(on) Flatnessf  
VNO or VNC = 1 and 2 V  
r
NO or NC Off Leakage  
Currentg  
Room  
Full  
- 100  
- 5000  
5
100  
5000  
INO/NC(off)  
VNO or VNC = 1 V/2 V, VCOM = 2 V/1 V  
Room  
Full  
- 100  
5
100  
COM Off Leakage Currentg  
pA  
ICOM(off)  
ICOM(on)  
VCOM = 1 V/2 V, VNO or VNC = 2 V/1 V  
VCOM = VNO or VNC = 1 V/2 V  
- 5000  
5000  
Room  
Full  
- 200  
- 10000  
10  
200  
10000  
Channel-On Leakage Currentg  
Digital Control  
IINL or IINH  
Input Current  
Full  
1
µA  
ns  
Dynamic Characteristics  
Room  
Full  
50  
20  
120  
200  
tON  
Turn-On Time  
Turn-Off Time  
VNO or VNC = 1.5 V  
Room  
Full  
50  
120  
tOFF  
td  
Break-Before-Make Time  
Charge Injection  
Room  
Room  
Room  
Room  
Room  
3
20  
1
QINJ  
CL = 1 nF, Vgen = 0 V, Rgen = 0 Ω  
RL = 50 Ω, CL = 5 pF, f = 1 MHz  
5
pC  
dB  
Off-Isolation  
OIRR  
CS(off)  
CD(on)  
- 74  
7
Source Off Capacitance  
f = 1 MHz  
pF  
Channel-On Capacitance  
Power Supply  
32  
Power Supply Range  
Power Supply Current  
V+  
I+  
2.7  
12  
1
V
V+ = 3.3 V, VIN = 0 or 3.3 V  
µA  
www.vishay.com  
2
Document Number: 70831  
S-71009–Rev. D, 14-May-07  
DG9431  
Vishay Siliconix  
SPECIFICATIONS (V+ = 5 V)  
D Suffix  
Test Conditions  
- 40 to 85 °C  
Unless Otherwise Specified  
V+ = 5 V, 10 %, VIN = 0.8 or 2.4 Ve  
Parameter  
Symbol  
Tempa  
Minc  
Typb  
Maxc Unit  
Analog Switch  
Analog Signal Ranged  
VANALOG  
rDS(on)  
Full  
0
5
V
VNO or VNC = 3.5 V, V+ = 4.5 V  
ICOM = 5 mA  
Room  
Full  
20  
30  
50  
Drain-Source On–Resistance  
rDS(on)Matchd  
Ω
ΔrDS(on)  
VNO or VNC = 1.5 V  
Room  
Room  
0.4  
2
6
rDS(on)  
Flatness  
DS(on) Flatnessf  
VNO or VNC = 1, 2 and 3 V  
2
r
Room  
Full  
- 100  
10  
100  
INO/NC(off)  
ICOM(off)  
ICOM(on)  
VNO or VNC = 1 V/4 V, VCOM = 4 V/1 V  
VCOM = 1 V/4 V, VNO or VNC = 4 V/1 V  
VCOM = VNO or VNC = 1 V/4 V  
NO or NC Off Leakage Current  
COM Off Leakage Current  
Channel-On Leakage Current  
- 5000  
5000  
Room  
Full  
- 100  
- 5000  
10  
100  
5000  
pA  
Room  
Full  
- 200  
- 10000  
200  
10000  
Digital Control  
IINL or IINH  
Input Current  
Full  
1
µA  
ns  
Dynamic Characteristics  
Room  
Full  
35  
20  
75  
tON  
Turn-On Time  
Turn-Off Time  
150  
VNO or VNC = 3.0 V  
Room  
Full  
50  
100  
tOFF  
td  
Break-Before-Make Time  
Charge Injection  
Room  
Room  
Room  
Room  
Room  
3
10  
2
QINJ  
CL = 1 nF, Vgen = 0 V, Rgen = 0 Ω  
RL = 50 Ω, CL = 5 pF, f = 1 MHz  
5
pC  
dB  
Off-Isolation  
OIRR  
C(off)  
- 74  
- 7  
32  
NC and NO Capacitance  
f = 1 MHz  
pF  
CD(on)  
Channel-On Capacitance  
Power Supply  
Power Supply Range  
Power Supply Current  
V+  
I+  
2.7  
12  
1
V
V+ = 5.5 V, VIN = 0 or 5.5 V  
µA  
Notes:  
a. Room = 25 °C, Full = as determined by the operating suffix.  
b. Typical values are for design aid only, not guaranteed nor subject to production testing.  
c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.  
d. Guarantee by design, nor subjected to production test.  
e. VIN = input voltage to perform proper function.  
f. Difference of min and max values.  
g. Guraranteed by 5-V leakage testing, not production tested.  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation  
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum  
rating conditions for extended periods may affect device reliability.  
Document Number: 70831  
S-71009–Rev. D, 14-May-07  
www.vishay.com  
3
DG9431  
Vishay Siliconix  
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted  
3000  
2500  
2000  
1500  
1000  
500  
2.0  
V+ = 3 V  
1.5  
1.0  
0.5  
0.0  
V+ = 5 V  
- 0.5  
- 1.0  
- 1.5  
- 2.0  
0
V+ = 3 V  
1
- 500  
0
2
3
4
5
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
V
IN  
V
COM  
Supply Current vs. VIN  
Charge Injection  
10 nA  
1 nA  
- 40  
- 60  
100 pA  
10 pA  
1 pA  
- 80  
I
COM(off)  
I
- 100  
- 120  
- 140  
COM(on)  
0.1 pA  
25  
45  
65  
85  
105  
125  
0.001 M  
0.01 M  
0.1 M  
1 M  
10 M  
Temperature (°C)  
Frequency (Hz)  
Leakage Current vs. Temperature  
Off-Isolation vs. Frequency  
30  
2.5  
2.0  
V+ = 5 V  
27  
24  
21  
18  
15  
12  
V+ = 3 V  
1.5  
1.0  
I
COM  
0.5  
0.0  
- 0.5  
- 1.0  
- 1.5  
- 2.0  
- 2.5  
I
NO/NC  
V+ = 5 V  
0
1
2
3
4
5
0
1
2
3
4
5
V
COM  
V
COM  
Off-Leakage vs. Voltage at 25 °C  
rDS vs. VCOM  
www.vishay.com  
4
Document Number: 70831  
S-71009–Rev. D, 14-May-07  
DG9431  
Vishay Siliconix  
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted  
35  
70  
60  
50  
40  
30  
20  
10  
0
V+ = 3 V  
85 °C  
28  
t
ON  
25 °C  
40 °C  
21  
14  
7
t
OFF  
0
0.0  
0.5  
1.0  
1.5  
V
2.0  
2.5  
3.0  
- 60  
- 30  
0
30  
60  
90  
120  
Temperature (°C)  
Switching Time vs. Temperature  
COM  
rDS vs. VCOM  
120  
100  
80  
60  
40  
20  
0
2.25  
2.00  
1.75  
1.50  
1.25  
1.00  
0.75  
0.50  
t
ON  
t
OFF  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
5.0  
2
3
4
5
6
V+  
tON/tOFF vs. Power Supply Voltage  
V+  
Input Switching Point vs. Power Supply Voltage  
Document Number: 70831  
S-71009–Rev. D, 14-May-07  
www.vishay.com  
5
DG9431  
Vishay Siliconix  
TEST CIRCUITS  
V+  
V+  
+ 3 V  
0 V  
t < 20 ns  
r
t < 20 ns  
f
Logic  
Input  
50 %  
Switch Output  
NO or NC  
COM  
Switch  
Input  
V
OUT  
0.9 x V  
OUT  
IN  
Switch  
Output  
R
L
C
L
300 Ω  
35 pF  
0 V  
GND  
Logic  
Input  
t
t
OFF  
ON  
0 V  
Logic "1" = Switch On  
Logic input waveforms inverted for switches that have  
the opposite logic sense.  
C
L
(includes fixture and stray capacitance)  
R
L
+ R  
V
= V  
COM  
OUT  
R
L
ON  
Figure 1. Switching Time  
V+  
V+  
Logic  
3 V  
Input  
t < 5 ns  
t < 5 ns  
f
r
0 V  
COM  
NO  
NC  
V
O
V
NO  
V
NC  
R
300 Ω  
C
L
35 pF  
L
V
NC  
= V  
NO  
V
IN  
90 %  
O
GND  
Switch  
Output  
0 V  
t
D
t
D
C
L
(includes fixture and stray capacitance)  
Figure 2. Break-Before-Make Interval  
V+  
V+  
ΔV  
OUT  
R
gen  
V
OUT  
NC or NO  
IN  
COM  
V
OUT  
+
IN  
V
gen  
C
L
On  
On  
Off  
Q = ΔV  
3 V  
GND  
x C  
OUT  
L
IN depends on switch configuration: input polarity  
determined by sense of switch.  
Figure 3. Charge Injection  
www.vishay.com  
6
Document Number: 70831  
S-71009–Rev. D, 14-May-07  
DG9431  
Vishay Siliconix  
TEST CIRCUITS  
V+  
V+  
10 nF  
COM  
0 V, 2.4 V  
IN  
COM  
NC or NO  
V
NC/ NO  
Off Isolation = 20 log  
R
L
V
COM  
GND  
Analyzer  
Figure 4. Off-Isolation  
V+  
V+  
10 nF  
COM  
Meter  
IN  
HP4192A  
Impedance  
Analyzer  
0 V, 2.4 V  
or Equivalent  
NC or NO  
GND  
f = 1 MHz  
Figure 5. Channel Off/On Capacitance  
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-  
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability  
data, see http://www.vishay.com/ppg?70831.  
Document Number: 70831  
S-71009–Rev. D, 14-May-07  
www.vishay.com  
7
Legal Disclaimer Notice  
Vishay  
Disclaimer  
All product specifications and data are subject to change without notice.  
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf  
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein  
or in any other disclosure relating to any product.  
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any  
information provided herein to the maximum extent permitted by law. The product specifications do not expand or  
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed  
therein, which apply to these products.  
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this  
document or by any conduct of Vishay.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless  
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such  
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting  
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding  
products designed for such applications.  
Product names and markings noted herein may be trademarks of their respective owners.  
Document Number: 91000  
Revision: 18-Jul-08  
www.vishay.com  
1

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