DG9431DV [VISHAY]
Low-Voltage Single SPDT Analog Switch; 低电压单SPDT模拟开关
| 型号： | DG9431DV |
| 厂家： | 
VISHAY |
| 描述： | Low-Voltage Single SPDT Analog Switch |
| 文件： | 总7页 (文件大小：72K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DG9431
Vishay Siliconix
Low-Voltage Single SPDT Analog Switch
FEATURES
BENEFITS
APPLICATIONS
D Low Voltage Operation (+2.7 to +5 V)
D Low On-Resistance - rDS(on): 20 W
D Fast Switching - tON : 35 ns, tOFF: 20 ns
D Low Leakage - ICOM(on): 200-pA max
D Low Charge Injection - QINJ: 1 pC
D Low Power Consumption
D Reduced Power Consumption
D Simple Logic Interface
D High Accuracy
D Battery Operated Systems
D Portable Test Equipment
D Sample and Hold Circuits
D Cellular Phones
D Reduce Board Space (TSOP-6)
D Communication Systems
D Military Radio
D TTL/CMOS Compatible
D PBX, PABX Guidance and Control
Systems
D ESD Protection > 2000 V (Method 3015.7)
D Available in TSOP-6 and SOIC-8
DESCRIPTION
The DG9431 is a single-pole/double-throw monolithic CMOS
analog device designed for high performance switching of
analog signals. Combining low power, high speed (tON: 35 ns,
tOFF: 20 ns), low on-resistance (rDS(on): 20 W) and small
physical size (TSOP-6), the DG9431 is ideal for portable and
battery powered applications requiring high performance and
efficient use of board space.
The DG9431 is built on Vishay Siliconix’s low voltage BCD-15
process. Minimum ESD protection, per Method 3015.7, is
2000 V. An epitaxial layer prevents latchup. Break-before
-make is guaranteed for DG9431.
Each switch conducts equally well in both directions when on,
and blocks up to the power supply level when off.
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
TSOP-6
TRUTH TABLE
IN
V+
NO
1
2
3
6
5
4
Logic
NC
NO
COM
NC
0
1
ON
OFF
ON
GND
OFF
Top View
Logic “0” v0.8 V
Logic “1”w 2.4 V
SOIC-8
ORDERING INFORMATION
NO
COM
NC
V+
IN
*
1
2
3
4
8
7
6
5
Temp Range
Package
TSOP-6
Part Number
DG9431DV
-40 to 85°C
SOIC-8
DG9431DY
GND
*
Top View
*Not Connected
Document Number: 70831
S-63598—Rev. B, 26-Jul-99
www.vishay.com S FaxBack 408-970-5600
4-1
DG9431
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Reference to GND
Storage Temperature (D Suffix) . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 125°C
b
Power Dissipation (Packages)
V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to +13 V
c
8-Pin Narrow Body SOIC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400 mW
a
IN, COM, NC, NO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to (V+ + 0.3 V)
Continuous Current (Any terminal) . . . . . . . . . . . . . . . . . . . . . . . . . . . "20 mA
Peak Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . "40 mA
(Pulsed at 1ms, 10% duty cycle)
Notes:
a. Signals on S , D , or IN exceeding V+ or V- will be clamped by internal
X
X
X
diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 6.5 mW/_C above 75_C
ESD (Method 3015.7) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . > 2000 V
SPECIFICATIONS (V+
=
3 V)
Test Conditions
Otherwise Unless Specified
D Suffix
–40 to 85_C
e
Minc
Typb
Maxc
Unit
V
V+ = 3 V, "10%, V = 0.8 or 2.4 V
Parameter
Symbol
Tempa
IN
Analog Switch
d
Analog Signal Range
V
Full
0
3
ANALOG
V
NO
or V = 1.5 V, V+ = 2.7 V
Room
Full
30
50
80
NC
Drain-Source On-Resistance
d
r
DS(on)
I
= 5 mA
COM
r
Match
Dr
DS(on)
V
NO
or V = 1.5 V
Room
Room
0.4
4
2
8
W
DS(on)
NC
r
DS(on)
f
r
Flatness
V or V = 1 and 2 V
NO NC
DS(on)
Flatness
Room
Full
-100
–5000
5
100
5000
g
NO or NC Off Leakage Current
I
V
V
or V = 1 V / 2 V, V
= 2 V / 1 V
NO/NC(off)
NO
NC
COM
Room
Full
-100
–5000
5
100
5000
g
COM Off Leakage Current
I
I
= 1 V / 2 V, V
or V = 2 V / 1 V
pA
COM(off)
COM
NO
NC
Room
Full
-200
–10000
10
200
10000
g
Channel-On Leakage Current
V
COM
= V
or V = 1 V / 2 V
NO NC
COM(on)
Digital Control
Input Current
IINL or IINH
Full
1
mA
Dynamic Characteristics
Turn-On Time
Room
Full
50
20
120
200
t
ON
V
NO
or V = 1.5 V
Room
Full
50
120
ns
NC
Turn-Off Time
t
OFF
Break-Before-Make Time
Charge Injection
t
Room
Room
Room
Room
Room
3
20
1
d
Q
INJ
C = 1 nF, Vgen = 0 V, Rgen = 0 W
5
pC
dB
L
Off-Isolation
OIRR
R
L
= 50 W, C = 5 pF, f = 1 MHz
–74
7
L
Source-Off Capacitance
Channel-On Capacitance
C
S(off)
D(on)
f = 1 MHz
pF
C
32
Power Supply
Power Supply Range
Power Supply Current
V+
I+
2.7
12
1
V
V+ = 3.3 V, V = 0 or 3.3 V
mA
IN
Notes:
a. Room = 25°C, Full = as determined by the operating suffix.
b. Typical values are for design aid only, not guaranteed nor subject to production testing.
c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
d. Guarantee by design, nor subjected to production test.
e.
f.
V
= input voltage to perform proper function.
IN
Difference of min and max values.
g. Guaranteed by 5-V leakage testing, not production tested.
Document Number: 70831
S-63598—Rev. B, 26-Jul-99
www.vishay.com S FaxBack 408-970-5600
4-2
DG9431
Vishay Siliconix
SPECIFICATIONS (V+
=
5 V)
Test Conditions
Otherwise Unless Specified
D Suffix
–40 to 85_C
e
Minc
Typb
Maxc
Unit
V
V+ = 5 V, "10%, V = 0.8 or 2.4 V
Parameter
Symbol
Tempa
IN
Analog Switch
d
Analog Signal Range
VANALOG
Full
0
5
V
or V = 3.5 V, V+ = 4.5 V
Room
Full
20
30
50
NO
NC
Drain-Source On-Resistance
d
r
DS(on)
I
= 5 mA
COM
r
Match
Dr
DS(on)
V
NO
or V = 1.5 V
Room
Room
0.4
2
2
6
W
DS(on)
NC
r
DS(on)
f
r
Flatness
V
or V = 1, 2, and 3 V
NO NC
DS(on)
Flatness
Room
Full
-100
–5000
10
100
5000
NO or NC Off Leakage Current
COM Off Leakage Current
I
V
V
or V = 1 V / 4 V, V
= 4 V / 1 V
NO/NC(off)
NO
NC
COM
Room
Full
-100
–5000
10
100
5000
I
I
= 1 V / 4 V, V or V = 4 V / 1 V
pA
COM(off)
COM
NO
NC
Room
Full
-200
–10000
200
10000
Channel-On Leakage Current
V
COM
= V
or V = 1 V / 4 V
NO NC
COM(on)
Digital Control
Input Current
IINL or IINH
Full
1
mA
Dynamic Characteristics
Room
Full
35
20
75
150
Turn-On Time
Turn-Off Time
t
ON
V
NO
or V = 3.0 V
Room
Full
50
100
ns
NC
t
OFF
Break-Before-Make Time
Charge Injection
t
Room
Room
Room
Room
Room
3
10
2
d
Q
INJ
C
= 1 nF, V
= 0 V, R = 0 W
gen
5
pC
dB
L
gen
Off-Isolation
OIRR
C(off)
R
= 50 W, C = 5 pF, f = 1 MHz
–74
–7
32
L
L
NC and NO Capacitance
Channel-On Capacitance
f = 1 MHz
pF
CD(on)
Power Supply
Power Supply Range
Power Supply Current
V+
I+
2.7
12
1
V
V+ = 5.5 V, V = 0 or 5.5 V
mA
IN
Notes:
a. Room = 25°C, Full = as determined by the operating suffix.
b. Typical values are for design aid only, not guaranteed nor subject to production testing.
c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
d. Guarantee by design, nor subjected to production test.
e.
f.
V
= input voltage to perform proper function.
IN
Difference of min and max values.
Document Number: 70831
S-63598—Rev. B, 26-Jul-99
www.vishay.com S FaxBack 408-970-5600
4-3
DG9431
Vishay Siliconix
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)
Charge Injection
Supply Current vs. V
IN
2.0
1.5
3000
V+ = 3 V
2500
2000
1500
1000
500
1.0
0.5
0.0
V+ = 5 V
–0.5
–1.0
–1.5
–2
0
V+ = 3 V
–500
0
0.5
1.0
1.5
2.0
2.5
3.0
0
1
2
3
4
5
V
COM
V
IN
Leakage Current vs. Temperature
Off-Isolation vs. Frequency
10 nA
1 nA
–40
–60
100 pA
–80
I
COM(off)
10 pA
1 pA
I
–100
–120
–140
COM(on)
0.1 pA
25
45
65
85
105
125
0.001 M
0.01 M
0.1 M
1 M
10 M
Temperature (_C)
Frequency (Hz)
Off-Leakage vs. Voltage @ 25_C
r
vs. V
DS COM
2.5
2.0
30
V+ = 5 V
27
24
21
18
15
12
V+ = 3 V
1.5
1.0
I
COM
0.5
0.0
–0.5
–1.0
–1.5
–2.0
–2.5
I
NO/NC
V+ = 5 V
0
1
2
3
4
5
0
1
2
3
4
5
V
COM
V
COM
Document Number: 70831
S-63598—Rev. B, 26-Jul-99
www.vishay.com S FaxBack 408-970-5600
4-4
DG9431
Vishay Siliconix
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)
r
vs. V
Switching Time vs. Temperature
DS
COM
35
28
21
14
7
70
60
50
40
30
20
10
0
V+ = 3 V
85_C
25_C
40_C
t
ON
t
OFF
0
0
0.5
1.0
1.5
2.0
2.5
3.0
–60
–30
0
30
60
90
120
V
COM
Temperature (_C)
t
/t
vs. Power Supply Voltage
Input Switching Point vs. Power Supply Voltage
ON OFF
120
100
80
60
40
20
0
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.5
t
ON
t
OFF
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
2
3
4
5
6
V+
V+
Document Number: 70831
S-63598—Rev. B, 26-Jul-99
www.vishay.com S FaxBack 408-970-5600
4-5
DG9431
Vishay Siliconix
TEST CIRCUITS
V+
+ 3 V
0 V
t t 20 ns
r
Logic
Input
50%
t t 20 ns
f
V+
Switch Output
NO or NC
COM
Switch
Input
V
OUT
0.9 x V
OUT
IN
Switch
Output
R
L
C
L
300 W
35 pF
0 V
Logic
Input
GND
t
t
OFF
ON
0 V
Logic “1” = Switch On
Logic input waveforms inverted for switches that have
the opposite logic sense.
C
L
(includes fixture and stray capacitance)
R
L
ǒ
Ǔ
V
+ V
OUT
COM
R
) R
L
ON
FIGURE 1. Switching Time
V+
Logic
Input
3 V
0 V
t <5 ns
r
t <5 ns
f
V+
COM
NO
V
O
V
NO
NC
IN
V
NC
R
300 W
C
L
35 pF
L
V
NC
= V
NO
V
O
90%
GND
Switch
Output
0 V
t
D
t
D
C
L
(includes fixture and stray capacitance)
FIGURE 2. Break-Before-Make Interval
V+
V+
DV
OUT
R
gen
V
OUT
NC or NO
IN
COM
V
OUT
+
IN
V
gen
C
L
On
On
Off
3 V
GND
Q = DV
x C
L
OUT
IN depends on switch configuration: input polarity
determined by sense of switch.
FIGURE 3. Charge Injection
Document Number: 70831
S-63598—Rev. B, 26-Jul-99
www.vishay.com S FaxBack 408-970-5600
4-6
DG9431
Vishay Siliconix
TEST CIRCUITS
V+
V+
10 nF
COM
0V, 2.4 V
IN
COM
NC or NO
V
NCńNO
COM
Off Isolation + 20 log
V
R
L
GND
Analyzer
FIGURE 4. Off-Isolation
V+
10 nF
V+
COM
Meter
IN
HP4192A
Impedance
Analyzer
0 V, 2.4 V
or Equivalent
NC or NO
GND
f = 1 MHz
FIGURE 5. Channel Off/On Capacitance
Document Number: 70831
S-63598—Rev. B, 26-Jul-99
www.vishay.com S FaxBack 408-970-5600
4-7
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