EDF1AS/50 [VISHAY]
Bridge Rectifier Diode, 1 Phase, 1A, 50V V(RRM), Silicon, PLASTIC, DFS, 4 PIN;
| 型号： | EDF1AS/50 |
| 厂家： | 
VISHAY |
| 描述： | Bridge Rectifier Diode, 1 Phase, 1A, 50V V(RRM), Silicon, PLASTIC, DFS, 4 PIN 光电二极管 |
| 文件： | 总2页 (文件大小：44K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
EDF1AS thru EDF1DS
Miniature Glass Passivated Ultrafast
Surface Mount Bridge Rectifiers
Case Style DFS
Reverse Voltage 50 to 200V
Forward Current 1.0A
0.205 (5.2)
0.195 (5.0)
0.047 (1.20)
0.040 (1.02)
Mounting Pad Layout
0.047 MIN.
(1.20 MIN.)
Dimensions in inches
and (millimeters)
0.404 MAX.
(10.26 MAX.)
0.404 (10.3)
0.386 (9.80)
0.060 MIN.
(1.52 MIN.)
0.335 (8.51)
0.320 (8.13)
45o
0.255 (6.5)
0.245 (6.2)
0.013 (0.330)
0.009 (0.241)
0.205 (5.2)
0.195 (5.0)
0.130 (3.3)
0.120 (3.05)
Features
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
0.060 (1.524)
0.040 (1.016)
0.013 (0.330)
0.003 (0.076)
Mechanical Data
Case: Molded plastic body over passivated junctions
Terminals: Plated leads solderable per MIL-STD-750,
Method 2026
Polarity: Polarity symbols marked on body
Mounting Position: Any Weight: 0.014oz., 0.4g
Packaging codes/options:
27/1.5K per 13” Reel (16mm Tape)
45/50 ea. per Tube-Bulk
• This series is UL listed under Recognized
Component Index, file number E54214
• Glass passivated chip junctions
• High surge overload rating-50 amperes peak
• Ideal for printed circuit boards
• Superfast recovery times for high efficiency
• High temperature soldering guaranteed:
260°C/10 seconds at 5 lbs. (2.3kg) tension
Maximum Ratings and Thermal Characteristics(TA = 25°C unless otherwise noted)
Parameter
Symbol EDF1AS EDF1BS EDF1CS EDF1DS
Unit
V
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VRRM
VRMS
VDC
50
35
50
100
70
150
106
150
200
140
200
V
Maximum DC blocking voltage
100
V
Maximum average forward output
rectified current at TA = 40°C (Note 2)
IF(AV)
1.0
A
Peak forward surge current single half sine-wave
superimposed on rated load (JEDEC Method) TJ = 150°C
IFSM
I2t
50
10
A
Rating for fusing (t < 8.3ms)
A2sec
°C/W
°C
Typical thermal resistance per leg (Note 1)
RθJA
RθJL
38
12
Operating junction and storage temperature range
TJ, TSTG
55 to +150
Electrical Characteristics(TA = 25°C unless otherwise noted)
Parameter
Symbol EDF1AS EDF1BS EDF1CS EDF1DS
Unit
Max. instantaneous forward voltage drop per leg at 1.0A (Note 2)
VF
IR
trr
1.05
V
Maximum DC reverse current
at rated DC blocking voltage
TA = 25°C
TA = 125°C
5.0
1.0
µA
mA
Max. reverse recovery time at IF = 0.5A, IR = 1.0A, Irr = 0.25A
50
ns
Notes: (1) P.C.B. mounted with 0.2 x 0.2” (5.0 x 5.0mm) copper pad areas
(2) Pulse test: 300µs pulse width, 1% duty cycle
9/5/00
EDF1AS thru EDF1DS
Miniature Glass Passivated Ultrafast
Surface Mount Bridge Rectifiers
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
Fig. 2 - Maximum Non-Repetitive Peak
Forward Surge Current
Fig. 1 - Derating Curves Output
Rectified Current
1.0
60
50
40
30
20
I
/ I = π Resistive
PK AV
or Inductive Load
T = 150°C
J
Single Sine-Wave
(JEDEC Method)
0.75
0.5
0.25
0
0.51 x 0.51" (13 x 13mm)
Copper pads
Capacitive
Loads
I
I
I
/ I = 5.0
PK AV
/ I = 10
PK AV
1.0 Cycle
10
10
0
/ I = 20
PK AV
20
40
60
80
140
160
1
100
100
120
Ambient Temperature (°C)
Number of Cycles at 60 Hz
Fig. 3 - Typical Forward Characteristics
Per Leg
Fig. 4 - Typical Reverse Leakage
Characteristics Per Leg
1,000
100
10
10
T = 125°C
J
1
0.1
T = 25°C
Pulse width = 300µs
J
1
1% Duty Cycle
T = 25°C
J
0.01
0.1
0.6
0.8
1.0
1.2
1.4
0.4
0
20
80
40
60
100
Instantaneous Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance
Per Leg
30
25
20
15
10
5.0
0
T = 25°C
J
f = 1.0 MHz
Vsig = 50mVp-p
0.1
1
10
Reverse Voltage (V)
100 200
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