EGF1CE3 [VISHAY]

DIODE 1 A, 150 V, SILICON, SIGNAL DIODE, DO-214BA, LEAD FREE, PLASTIC, GF1, 2 PIN, Signal Diode;


型号：	EGF1CE3
厂家：	VISHAY
描述：	DIODE 1 A, 150 V, SILICON, SIGNAL DIODE, DO-214BA, LEAD FREE, PLASTIC, GF1, 2 PIN, Signal Diode
文件：	总4页 (文件大小：229K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

EGF1A thru EGF1D

Vishay General Semiconductor

Surface Mount Glass Passivated Ultrafast Rectifier

Major Ratings and Characteristics

I_F(AV)

V_RRM

I_FSM

t_rr

1.0 A

50 V to 200 V

30 A

50 ns

V_F

1.0 V

T_jmax.

175 °C

* Glass-plastic encapsulation

technique is covered by patent

No. 3,996,602, brazed-lead

DO-214BA (GF1)

assembly by Patent No. 3,930,306

and lead forming by Patent No. 5,151,846

Features

Mechanical Data

• Cavity-free glass-passivated junction

Case: DO-214BA, molded epoxy over glass body

• Ideal for automated placement

Epoxy meets UL-94V-0 Flammability rating

• Ultrafast reverse recovery time

• Low switching losses, high efficiency

• High forward surge capability

• Meets environmental standard MIL-S-19500

• Meets MSL level 1, per J-STD-020C

• Solder Dip 260 °C, 40 seconds

Terminals: Matte tin plated leads, solderable per

J-STD-002B and JESD22-B102D

E3 suffix for commercial grade, HE3 suffix for high

reliability grade (AEC Q101 qualified)

Polarity: Color band denotes cathode end

Typical Applications

For use in high frequency rectification and freewheel-

ing application in switching mode converters and

inverters for consumer, computer, automotive and

Telecommunication

Maximum Ratings

T_A= 25 °C unless otherwise specified

Parameter

Device Marking Code

Symbol

EGF1A

EGF1B

EGF1C

EGF1D

Unit

Maximum repetitive peak reverse voltage

V_RRM

V_RMS

V_DC

100

150

200

Maximum RMS voltage

105

150

140

200

Maximum DC blocking voltage

100

Maximum average forward rectified current at T_L= 125 °C

I_F(AV)

I_FSM

1.0

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load

Operating junction and storage temperature range

T_J,T_STG

- 65 to + 175

°C

Document Number 88579

15-Aug-05

www.vishay.com

EGF1A thru EGF1D

Vishay General Semiconductor

Electrical Characteristics

T_A= 25 °C unless otherwise specified

Parameter

Maximum instantaneous forward

voltage ⁽¹⁾

Test condition

at 1.0 A

Symbol

V_F

EGF1A

EGF1B

EGF1C

EGF1D

Unit

1.0

Maximum DC reverse current at

rated DC blocking voltage ⁽¹⁾

Typical reverse recovery time

T_A= 25 °C

I_R

t_rr

5.0

µA

T_A= 125 °C

at I_F= 0.5 A, I_R= 1.0 A,

I_rr= 0.25 A

Typical junction capacitance

Notes:

at 4.0 V, 1 MHz

C_J

(1) Pulse test: 300 µs pulse width, 1 % duty cycle

Thermal Characteristics

T_A= 25 °C unless otherwise specified

Parameter

Typical thermal resistance ⁽¹⁾

Symbol

R_θJA

R_θJL

EGF1A

EGF1B

EGF1C

EGF1D

Unit

°C/W

Notes:

(1) Thermal resistance from junction to ambient and from junction to lead, P.C.B. mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pad areas

Ratings and Characteristics Curves

(T_A= 25 °C unless otherwise specified)

5.0

1.0

0.5

T_J= T_Jmax.

8.3ms Single Half Sine-Wave

Resistive or Inductive Load

P.C.B. Mounted on 0.2 x 0.2"

(5.0 x 5.0mm) Copper Pad Areas

100

125

150

175

Number of Cycles at 60 H

Lead Temperature (°C)

Figure 1. Maximum Forward Current Derating Curve

Figure 2. Maximum Non-Repetitive Peak Forward Surge Current

www.vishay.com

Document Number 88579

15-Aug-05

EGF1A thru EGF1D

Vishay General Semiconductor

= 25°C

f = 1.0 MH

Vsig = 50mVp-p

TJ = 150°C

TJ = 25°C

Pulse Width = 300µs

1% Duty Cycle

0.1

0.01

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

0.1

100

Instantaneous Forward Voltage (V)

Reverse Voltage (V)

Figure 3. Typical Instantaneous Forward Characteristics

Figure 5. Typical Junction Capacitance

100

1000

100

T_J= 150°C

T_J= 100°C

0.1

T_J= 25°C

0.01

0.1

0.01

100

0.1

100

Percent of Rated Peak Reverse Voltage (%)

Pulse Duration, sec. (t)

Figure 4. Typical Reverse Leakage Characteristics

Figure 6. Typical Transient Thermal Impedance

Package outline dimensions in inches (millimeters)

DO-214BA (GF1)

Cathode Band

Mounting Pad Layout

0.076 MAX.

(1.93 MAX.)

0.066 (1.68)

0.066 MIN.

(1.68 MIN.)

0.040 (1.02)

0.187 (4.75)

0.167 (4.24)

0.015 (0.38)

0.060 MIN.

(1.52 MIN.)

0.0065 (0.17)

0.108 (2.74)

0.098 (2.49)

0.118 (3.00)

0.100 (2.54)

0.220

(5.58) REF

0.114 (2.90)

0.094 (2.39)

0.006 (0.152) TYP.

0.060 (1.52)

0.030 (0.76)

0.226 (5.74)

0.196 (4.98)

Document Number 88579

15-Aug-05

www.vishay.com

Legal Disclaimer Notice

Vishay

Notice

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,

or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, by

estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's

terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express

or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness

for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.

Customers using or selling these products for use in such applications do so at their own risk and agree to fully

indemnify Vishay for any damages resulting from such improper use or sale.

Document Number: 91000

Revision: 08-Apr-05

www.vishay.com

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