EGP10C-HE3 [VISHAY]

DIODE 1 A, 150 V, SILICON, SIGNAL DIODE, DO-204AL, LEAD FREE, PLASTIC, DO-41, 2 PIN, Signal Diode;


型号：	EGP10C-HE3
厂家：	VISHAY
描述：	DIODE 1 A, 150 V, SILICON, SIGNAL DIODE, DO-204AL, LEAD FREE, PLASTIC, DO-41, 2 PIN, Signal Diode
文件：	总4页 (文件大小：337K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

EGP10A thru EGP10G

Vishay General Semiconductor

Glass Passivated Ultrafast Rectifier

Major Ratings and Characteristics

I_F(AV)

V_RRM

I_FSM

t_rr

1.0 A

50 V to 200 V

30 A

50 ns

V_F

0.95 V, 1.25 V

150 °C

T_jmax.

*Glass Encapsulation

technique is covered by

Patent No. 3,996,602,

brazed-lead assembly

to Patent No. 3,930,306

DO-204AL (DO-41)

Features

Mechanical Data

• Cavity-free glass-passivated junction

• Ultrafast reverse recovery time

• Low forward voltage drop

Case: DO-204AL, molded epoxy over glass body

Epoxy meets UL-94V-0 Flammability rating

Terminals: Matte tin plated leads, solderable per

J-STD-002B and JESD22-B102D

E3 suffix for commercial grade, HE3 suffix for high

reliability grade (AEC Q101 qualified)

• Low leakage current

• Low switching losses, high efficiency

• High forward surge capability

• Solder Dip 260 °C, 40 seconds

Polarity: Color band denotes cathode end

Typical Applications

For use in high frequency rectification and freewheel-

ing application in switching mode converters and

inverters for consumer, computer and Telecommuni-

cation

Maximum Ratings

T_A= 25 °C unless otherwise specified

Parameter

Symbol EGP10A EGP10B EGP10C EGP10D EGP10F EGP10G Unit

Maximum repetitive peak reverse voltage

V_RRM

V_RMS

V_DC

100

150

105

150

200

140

200

300

210

300

400

280

400

Maximum RMS voltage

Maximum DC blocking voltage

100

Maximum average forward rectified current 0.375"

(9.5 mm) lead length at T_A= 55 °C

I_F(AV)

1.0

Peak forward surge current 8.3 ms single half sine-

wave superimposed on rated load

I_FSM

Operating and storage temperature range

T_J,T_STG

- 65 to + 150

°C

Document Number 88582

24-Oct-05

www.vishay.com

EGP10A thru EGP10G

Vishay General Semiconductor

Electrical Characteristics

T_A= 25 °C unless otherwise specified

Parameter

Test condition

at 1.0 A

Symbol EGP10A EGP10B EGP10C EGP10D EGP10F EGP10G Unit

Maximum instantaneous

forward voltage

V_F

0.95

1.25

Maximum DC reverse

current at rated DC blocking

voltage

_A= 25 °C

I_R

5.0

100

µA

T_A= 125 °C

Maximum reverse recovery at I_F= 0.5 A, I_R= 1.0 A,

time

t_rr

I_rr= 0.25 A

Typical junction capacitance at 4.0 V, 1 MHz

C_J

Thermal Characteristics

T_A= 25 °C unless otherwise specified

Parameter

Typical thermal resistance ⁽¹⁾

Notes:

Symbol EGP10A EGP10B EGP10C EGP10D EGP10F EGP10G

R_θJA50

Unit

°C/W

(1) Thermal resistance from junction to ambient, and from junction to lead at 0.375" (9.5 mm) lead length, P.C.B. mounted

Ratings and Characteristics Curves

(T_A= 25 °C unless otherwise noted)

1.0

0.5

5.0

TJ = TJ max.

8.3 ms Single Half Sine-Wave

Resistive or Inductive Load

0.375” (9.5mm) Lead Length

100

125

150

175

Lead Temperature (°C)

Number of Cycles at 60 Hz

Figure 1. Maximum Forward Current Derating Curve

Figure 2. Maximum Non-Repetitive Peak Forward Surge Current

www.vishay.com

Document Number 88582

24-Oct-05

EGP10A thru EGP10G

Vishay General Semiconductor

TJ = 25 °C

f = 1.0 MHz

V^sig= 50mVp-p

Pulse Width = 300 µs

1% Duty Cycle

TJ = 150 °C

TJ = 25 °C

0.1

EGP10A – EGP10D

EGP10F – EGP10G

EGP10A – EGP10D

EGP10F – EGP10G

0.01

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

0.1

100

Instantaneous Forward Voltage (V)

Reverse Voltage (V)

Figure 3. Typical Instantaneous Forward Characteristics

Figure 5. Typical Junction Capacitance

1000

100

TJ = 150 °C

= 100 °C

0.1

= 25 °C

0.1

0.01

100

0.1

100

Pulse Duration, sec. (t)

Percent of Rated Peak Reverse Voltage (%)

Figure 4. Typical Reverse Leakage Characteristics

Figure 6. Typical Transient Thermal Impedance

Package outline dimensions in inches (millimeters)

DO-204AL (DO-41)

1.0 (25.4)

MIN.

0.107 (2.7)

0.080 (2.0)

DIA.

0.205 (5.2)

0.160 (4.1)

1.0 (25.4)

MIN.

0.034 (0.86)

0.028 (0.71)

DIA.

0.026 (0.66)

0.023 (0.58)

NOTE: Lead diameter is

for suffix “E” part numbers

Document Number 88582

24-Oct-05

www.vishay.com

Legal Disclaimer Notice

Vishay

Notice

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,

or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, by

estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's

terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express

or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness

for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.

Customers using or selling these products for use in such applications do so at their own risk and agree to fully

indemnify Vishay for any damages resulting from such improper use or sale.

Document Number: 91000

Revision: 08-Apr-05

www.vishay.com

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