EGP20C/62 [VISHAY]

Rectifier Diode, 1 Phase, 1 Element, 2A, 150V V(RRM), Silicon, DO-204AC, PLASTIC, DO-15, 2 PIN;


型号：	EGP20C/62
厂家：	VISHAY
描述：	Rectifier Diode, 1 Phase, 1 Element, 2A, 150V V(RRM), Silicon, DO-204AC, PLASTIC, DO-15, 2 PIN 功效二极管
文件：	总5页 (文件大小：332K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

EGP20A thru EGP20G

Vishay General Semiconductor

Glass Passivated Ultrafast Rectifier

Major Ratings and Characteristics

I_F(AV)

V_RRM

I_FSM

t_rr

2.0 A

50 V to 400 V

75 A

50 ns

V_F

0.95 V, 1.25 V

150 °C

T_jmax.

DO-204AC (DO-15)

* Glass Encapsulation

technique is covered by

Patent No. 3,996,602,

brazed-lead assembly

to Patent No. 3,930,306

Features

Mechanical Data

• Cavity-free glass-passivated junction

• Ultrafast reverse recovery time

• Low forward voltage drop

Case: DO-204AC, molded epoxy over glass body

Epoxy meets UL-94V-0 Flammability rating

Terminals: Matte tin plated leads, solderable per

J-STD-002B and JESD22-B102D

E3 suffix for commercial grade, HE3 suffix for high

reliability grade (AEC Q101 qualified)

• Low leakage current

• Low switching losses, high efficiency

• High forward surge capability

• Solder Dip 260 °C, 40 seconds

Polarity: Color band denotes cathode end

Typical Applications

For use in high frequency rectification and freewheel-

ing application in switching mode converters and

inverters for consumer, computer and Telecommuni-

cation

Maximum Ratings

T_A= 25 °C unless otherwise specified

Parameter

Symbol EGP20A EGP20B EGP20C EGP20D EGP20F EGP20G

Unit

Maximum repetitive peak reverse voltage

V_RRM

V_RMS

V_DC

100

150

105

150

200

140

200

300

210

300

400

280

400

Maximum RMS voltage

Maximum DC blocking voltage

100

Maximum average forward rectified current 0.375"

(9.5 mm) lead length at T_A= 55 °C

I_F(AV

)

2.0

Peak forward surge current 8.3 ms single half sine-

wave superimposed on rated load

I_FSM

Operating and storage temperature range

T_J,T_STG

- 65 to + 150

°C

Document Number 88583

10-Aug-05

www.vishay.com

EGP20A thru EGP20G

Vishay General Semiconductor

Electrical Characteristics

T_A= 25 °C unless otherwise specified

Parameter

Test condition

at 2.0 A

Symbol EGP20A EGP20B EGP20C EGP20D EGP20F EGP20G Unit

Maximum instantaneous

forward voltage

V_F

0.95

1.25

Maximum DC reverse current T_A= 25 °C

I_R

5.0

µA

at rated DC blocking voltage

100

T_A= 125 °C

Maximum reverse recovery

time

at I_F= 0.5 A, I_R= 1.0 A,

I_rr= 0.25 A

t_rr

Typical junction capacitance

at 4.0 V, 1 MHz

C_J

Thermal Characteristics

T_A= 25 °C unless otherwise specified

Parameter

Symbol EGP20A EGP20B EGP20C EGP20D EGP20F EGP20G Unit

Typical thermal resistance ⁽¹⁾

R_θJA

R_θJL

°C/W

Notes:

(1) Thermal resistance from junction to ambient, and from junction to lead at 0.375" (9.5 mm) lead length, P.C.B. mounted

www.vishay.com

Document Number 88583

10-Aug-05

EGP20A thru EGP20G

Vishay General Semiconductor

Ratings and Characteristics Curves

(T_A= 25 °C unless otherwise noted)

3.0

100

Resistive or Inductive Load

EGP20A~EGP20D

0.375" (9.5mm) Lead Length

Tj = 150 °C

Tj = 125 °C

Tj = 100 °C

2.0

0.1

0.01

1.0

Tj = 25 °C

0.001

100

125

150

175

100

Ambient Temperature (°C)

Percent of Peak Reverse Voltage (%)

Figure 1. Maximum Forward Current Derating Curve

Figure 4. Typical Reverse Leakage Characteristics

100

T_J= T_Jmax.

EGP20F~EGP20G

8.3ms Single Half Sine-Wave

Tj = 150 °C

Tj = 125 °C

Tj = 100 °C

0.1

Tj = 25 °C

0.01

100

0.2

0.4

0.6

0.8

1.2

1.4

1.6

1.8

Number of Cycles at 60 H

Instantaneous Forward Voltage (V)

Figure 2. Maximum Non-Repetitive Peak Forward Surge Current

Figure 5. Typical Instantaneous Forward Characteristics

100

EGP20A~EGP20D

EGP20F~EGP20G

= 150 °C

Tj = 150 °C

= 125 °C

Tj = 125 °C

= 100 °C

0.1

Tj = 100 °C

Tj = 25 °C

0.1

0.01

Tj = 25 °C

0.01

0.001

0.2

0.4

0.6

0.8

1.2

100

Instantaneous Forward Voltage (V)

Percent of Peak Reverse Voltage (%)

Figure 6. Typical Reverse Leakage Characteristics

Figure 3. Typical Instantaneous Forward Characteristics

Document Number 88583

10-Aug-05

www.vishay.com

EGP20A thru EGP20G

Vishay General Semiconductor

140

100

TJ = 25°C

f = 1.0 MHZ

Vsig = 50mVp-p

120

100

EGP20A - EGP20D

EGP20F & EGP20G

0.1

0.01

t, Pulse Duration (sec.)

0.1

100

0.1

Reverse Voltage (V)

100

1000

Figure 7. Typical Junction Capacitance

Figure 8. Typical Transient Thermal Impedance

Package outline dimensions in inches (millimeters)

DO-204AC (DO-15)

0.034 (0.86)

0.028 (0.71)

Dia.

1.0 (25.4)

min.

0.300 (7.6)

0.230 (5.8)

0.140 (3.6)

0.104 (2.6)

Dia.

1.0 (25.4)

min.

www.vishay.com

Document Number 88583

10-Aug-05

Legal Disclaimer Notice

Vishay

Notice

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,

or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, by

estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's

terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express

or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness

for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.

Customers using or selling these products for use in such applications do so at their own risk and agree to fully

indemnify Vishay for any damages resulting from such improper use or sale.

Document Number: 91000

Revision: 08-Apr-05

www.vishay.com

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