EGP20C-E3 [VISHAY]
DIODE 2 A, 150 V, SILICON, RECTIFIER DIODE, DO-204AC, LEAD FREE, PLASTIC, DO-15, 2 PIN, Rectifier Diode;
| 型号： | EGP20C-E3 |
| 厂家： | 
VISHAY |
| 描述： | DIODE 2 A, 150 V, SILICON, RECTIFIER DIODE, DO-204AC, LEAD FREE, PLASTIC, DO-15, 2 PIN, Rectifier Diode 功效 二极管 |
| 文件： | 总4页 (文件大小：306K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
EGP20A thru EGP20G
Vishay General Semiconductor
Glass Passivated Ultrafast Rectifier
Major Ratings and Characteristics
IF(AV)
VRRM
IFSM
trr
2.0 A
50 V to 400 V
75 A
50 ns
VF
0.95 V, 1.25 V
150 °C
Tj max.
DO-204AC (DO-15)
* Glass Encapsulation
technique is covered by
Patent No. 3,996,602,
brazed-lead assembly
to Patent No. 3,930,306
Features
Mechanical Data
• Cavity-free glass-passivated junction
• Ultrafast reverse recovery time
• Low forward voltage drop
Case: DO-204AC, molded epoxy over glass body
Epoxy meets UL-94V-0 Flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
• Low leakage current
• Low switching losses, high efficiency
• High forward surge capability
• Solder Dip 260 °C, 40 seconds
Polarity: Color band denotes cathode end
Typical Applications
For use in high frequency rectification and freewheel-
ing application in switching mode converters and
inverters for consumer, computer and Telecommuni-
cation
Maximum Ratings
TA = 25 °C unless otherwise specified
Parameter
Symbol EGP20A EGP20B EGP20C EGP20D EGP20F EGP20G
Unit
V
Maximum repetitive peak reverse voltage
VRRM
VRMS
VDC
50
35
50
100
70
150
105
150
200
140
200
300
210
300
400
280
400
Maximum RMS voltage
V
V
A
Maximum DC blocking voltage
100
Maximum average forward rectified current 0.375"
(9.5 mm) lead length at TA = 55 °C
IF(AV
)
2.0
75
Peak forward surge current 8.3 ms single half sine-
wave superimposed on rated load
IFSM
A
Operating and storage temperature range
TJ,TSTG
- 65 to + 150
°C
Document Number 88583
10-Aug-05
www.vishay.com
1
EGP20A thru EGP20G
Vishay General Semiconductor
Electrical Characteristics
TA = 25 °C unless otherwise specified
Parameter
Test condition
at 2.0 A
Symbol EGP20A EGP20B EGP20C EGP20D EGP20F EGP20G Unit
Maximum instantaneous
forward voltage
VF
0.95
1.25
V
Maximum DC reverse current TA = 25 °C
IR
5.0
µA
at rated DC blocking voltage
100
TA = 125 °C
Maximum reverse recovery
time
at IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A
trr
50
ns
Typical junction capacitance
at 4.0 V, 1 MHz
CJ
70
45
pF
Thermal Characteristics
TA = 25 °C unless otherwise specified
Parameter
Symbol EGP20A EGP20B EGP20C EGP20D EGP20F EGP20G Unit
Typical thermal resistance (1)
RθJA
RθJL
40
15
°C/W
Notes:
(1) Thermal resistance from junction to ambient, and from junction to lead at 0.375" (9.5 mm) lead length, P.C.B. mounted
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2
Document Number 88583
10-Aug-05
EGP20A thru EGP20G
Vishay General Semiconductor
Ratings and Characteristics Curves
(TA = 25 °C unless otherwise noted)
3.0
100
Resistive or Inductive Load
EGP20A~EGP20D
0.375" (9.5mm) Lead Length
Tj = 150 °C
10
Tj = 125 °C
Tj = 100 °C
2.0
1
0.1
0.01
1.0
0
Tj = 25 °C
0.001
0
25
50
75
100
125
150
175
0
20
40
60
80
100
Ambient Temperature (°C)
Percent of Peak Reverse Voltage (%)
Figure 1. Maximum Forward Current Derating Curve
Figure 4. Typical Reverse Leakage Characteristics
90
100
TJ = TJ max.
EGP20F~EGP20G
8.3ms Single Half Sine-Wave
75
Tj = 150 °C
10
60
45
30
15
0
Tj = 125 °C
1
Tj = 100 °C
0.1
Tj = 25 °C
0.01
1
10
100
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
Number of Cycles at 60 H
Z
Instantaneous Forward Voltage (V)
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
Figure 5. Typical Instantaneous Forward Characteristics
100
100
EGP20A~EGP20D
EGP20F~EGP20G
T
j
= 150 °C
Tj = 150 °C
10
1
10
Tj
= 125 °C
Tj = 125 °C
Tj
= 100 °C
1
0.1
Tj = 100 °C
Tj = 25 °C
0.1
0.01
Tj = 25 °C
0.01
0.001
0.2
0.4
0.6
0.8
1
1.2
0
20
40
60
80
100
Instantaneous Forward Voltage (V)
Percent of Peak Reverse Voltage (%)
Figure 6. Typical Reverse Leakage Characteristics
Figure 3. Typical Instantaneous Forward Characteristics
Document Number 88583
10-Aug-05
www.vishay.com
3
EGP20A thru EGP20G
Vishay General Semiconductor
140
100
10
TJ = 25°C
f = 1.0 MHZ
Vsig = 50mVp-p
120
100
80
60
1
40
20
0
EGP20A - EGP20D
EGP20F & EGP20G
0.1
0.01
10
t, Pulse Duration (sec.)
0.1
1
100
0.1
1
10
Reverse Voltage (V)
100
1000
Figure 7. Typical Junction Capacitance
Figure 8. Typical Transient Thermal Impedance
Package outline dimensions in inches (millimeters)
DO-204AC (DO-15)
0.034 (0.86)
0.028 (0.71)
Dia.
1.0 (25.4)
min.
0.300 (7.6)
0.230 (5.8)
0.140 (3.6)
0.104 (2.6)
Dia.
1.0 (25.4)
min.
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4
Document Number 88583
10-Aug-05
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