EGP30G/72 [VISHAY]

Rectifier Diode, 1 Phase, 1 Element, 3A, 400V V(RRM), Silicon, PLASTIC, GP20, 2 PIN;
EGP30G/72
型号: EGP30G/72
厂家: VISHAY    VISHAY
描述:

Rectifier Diode, 1 Phase, 1 Element, 3A, 400V V(RRM), Silicon, PLASTIC, GP20, 2 PIN

文件: 总3页 (文件大小:211K)
中文:  中文翻译
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EGP30A thru EGP30G  
Vishay Semiconductors  
Glass Passivated Ultrafast Rectifier  
®
Major Ratings and Characteristics  
IF(AV)  
VRRM  
IFSM  
trr  
3.0 A  
50 V to 400 V  
125 A  
50 ns  
*
d
VF  
0.95 V, 1.25 V  
150 °C  
e
t
n
e
t
Tj max.  
a
P
*Glass Encapsulation  
GP20  
technique is covered by  
Patent No. 3,996,602,  
brazed-lead assembly to  
Patent No. 3,930,306  
Features  
Mechanical Data  
• Cavity-free glass-passivated junction  
• Ultrafast reverse recovery time  
• Low forward voltage drop  
Case: GP20, molded epoxy over glass body  
Epoxy meets UL-94V-0 Flammability rating  
Terminals: Matte tin plated leads, solderable per  
J-STD-002B and JESD22-B102D  
E3 suffix for commercial grade, HE3 suffix for high  
reliability grade (AEC Q101 qualified)  
• Low leakage current  
• Low switching losses, high efficiency  
• High forward surge capability  
• Solder Dip 260° C, 40 seconds  
Polarity: Color band denotes cathode end  
Typical Applications  
For use in high frequency rectification and freewheel-  
ing application in switching mode converters and  
inverters for consumer, computer and Telecommuni-  
cation  
Maximum Ratings  
TA = 25 °C unless otherwise specified  
Parameter  
Symbol EGP30A EGP30B EGP30C EGP30D EGP30F EGP30G  
Unit  
V
Maximum repetitive peak reverse voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
100  
70  
150  
105  
150  
200  
140  
200  
300  
210  
300  
400  
280  
400  
Maximum RMS voltage  
V
V
A
Maximum DC blocking voltage  
100  
Maximum average forward rectified current  
0.375" (9.5 mm) lead length at TA = 55 °C  
IF(AV)  
3.0  
Peak forward surge current 8.3 ms single half  
sine-wave superimposed on rated load  
IFSM  
125  
A
Operating and storage temperature range  
TJ,TSTG  
- 65 to + 150  
°C  
Document Number 88584  
10-Aug-05  
www.vishay.com  
1
EGP30A thru EGP30G  
Vishay Semiconductors  
Electrical Characteristics  
TA = 25 °C unless otherwise specified  
Parameter  
Test condition  
at 3.0 A  
Symbol EGP30A EGP30B EGP30C EGP30D EGP30F EGP30G Unit  
Maximum instantaneous  
forward voltage  
VF  
0.95  
1.25  
V
Maximum DC reverse current TA = 25 °C  
IR  
5.0  
µA  
at rated DC blocking voltage  
100  
TA = 125 °C  
Maximum reverse  
recovery time  
at IF = 0.5 A, IR = 1.0 A,  
Irr = 0.25 A  
trr  
50  
ns  
Typical junction capacitance at 4.0 V, 1 MHz  
CJ  
85  
75  
pF  
Thermal Characteristics  
TA = 25 °C unless otherwise specified  
Parameter  
Symbol EGP30A EGP30B EGP30C EGP30D EGP30F EGP30G  
Unit  
Typical thermal resistance (1)  
RθJA  
RθJL  
20  
8.0  
°C/W  
Notes:  
(1) Thermal resistance from junction to ambient, and from junction to lead at 0.375" (9.5 mm) lead length, P.C.B. mounted  
Ratings and Characteristics Curves  
(TA = 25 °C unless otherwise noted)  
3.0  
2.0  
1.0  
175  
Resistive or Inductive Load  
0.375” (9.5mm) Lead Length  
TJ = TJ max.  
8.3 ms Single Half Sine-Wave  
150  
125  
100  
75  
50  
25  
0
1
10  
100  
0
25  
50  
75 100 125 150 175  
Number of Cycles at 60 H  
Ambient Temperature (°C)  
Figure 1. Maximum Forward Current Derating Curve  
z
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current  
www.vishay.com  
Document Number 88584  
10-Aug-05  
2
EGP30A thru EGP30G  
Vishay Semiconductors  
50  
10  
210  
T
J
= 25 °C  
f = 1.0 MH  
Vsig = 50mVp-p  
Z
180  
150  
120  
90  
TJ = 150°C  
TJ = 25°C  
1
0.1  
Pulse Width = 300µs  
1% Duty Cycle  
60  
30  
EGP30A — EGP30D  
EGP30F & EGP30G  
EGP30A — EGP30D  
EGP30F & EGP30G  
0.01  
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
0
1
10  
Reverse Voltage (V)  
100  
1000  
Instantaneous Forward Voltage (V)  
Figure 3. Typical Instantaneous Forward Characteristics  
Figure 5. Typical Junction Capacitance  
100  
100  
10  
TJ = 150°C  
10  
TJ = 125°C  
1
TJ = 75°C  
0.1  
1
TJ = 25°C  
0.01  
0.1  
0.01  
0.001  
0
20  
40  
60  
80  
100  
10  
t, Pulse Duration (sec.)  
0.1  
1
100  
Percent of Rated Peak Reverse Voltage (%)  
Figure 4. Typical Reverse Leakage Characteristics  
Figure 6. Typical Transient Thermal Impedance  
Package outline dimensions in inches (millimeters)  
GP20  
1.0 (25.4)  
MIN.  
0.210 (5.3)  
0.190 (4.8)  
DIA.  
0.375 (9.5)  
0.285 (7.2)  
1.0 (25.4)  
MIN.  
0.042 (1.07)  
0.037 (0.94)  
DIA.  
Document Number 88584  
10-Aug-05  
www.vishay.com  
3

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