EMIPAK-1B [VISHAY]
EMIPAK-1B PressFit Power Module Neutral Point Clamp Topology, 30 A;
| 型号： | EMIPAK-1B |
| 厂家： | 
VISHAY |
| 描述： | EMIPAK-1B PressFit Power Module Neutral Point Clamp Topology, 30 A |
| 文件： | 总15页 (文件大小：317K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VS-ENQ030L120S
Vishay Semiconductors
www.vishay.com
EMIPAK-1B PressFit Power Module
Neutral Point Clamp Topology, 30 A
FEATURES
• Ultrafast Trench IGBT technology
• HEXFRED® and silicon carbide diode technology
• PressFit pins technology
• Exposed Al2O3 substrate with low thermal resistance
• Low internal inductances
• PressFit pins locking technology. Patent # US.263.820 B2
• UL approved file E78996
EMIPAK-1B
(package example)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
PRODUCT SUMMARY
VS-ENQ030L120S is an integrated solution for a neutral
point clamp topology in a single package. The EMIPAK-1B
TRENCH IGBT 1200 V STAGE
VCES
CE(ON) typical at IC = 30 A
C at TC = 102 °C
1200 V
package is easy to use thanks to the PressFit pins and the
exposed substrate provides improved thermal performance.
The optimized layout also helps to minimize stray
parameters, allowing for better EMI performance.
V
V
2.12 V
30 A
I
TRENCH IGBT 600 V STAGE
VCES
CE(ON) typical at IC = 30 A
600 V
1.42 V
30 A
IC at TC = 106 °C
Speed
8 kHz to 30 kHz
Package
Circuit
EMIPAK-1B
3-levels neutral point clamp topology
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
MAX.
150
UNITS
Operating junction temperature
Storage temperature range
RMS isolation voltage
TJ
°C
V
TStg
VISOL
-40 to +150
3500
TJ = 25 °C, all terminals shorted, f = 50 Hz, t = 1 s
Q1 - Q4 TRENCH IGBT 1200 V
Collector to emitter voltage
Gate to emitter voltage
VCES
VGES
ICM
1200
30
V
A
Pulsed collector current
Clamped inductive load current
120
120
61
(1)
ILM
TC = 25 °C
TC = 80 °C
Continuous drain current
Power dissipation
IC
40
A
T
SINK = 80 °C
TC = 25 °C
C = 80 °C
21
216
121
PD
W
T
PATENT(S): www.vishay.com/patents
This Vishay product is protected by one or more United States and International patents.
Revision: 16-Jun-16
Document Number: 94684
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ENQ030L120S
Vishay Semiconductors
www.vishay.com
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
MAX.
UNITS
Q2 - Q3 TRENCH IGBT 600 V
Collector to emitter voltage
Gate to emitter voltage
Pulsed collector current
Clamped inductive load current
VCES
VGES
ICM
600
20
V
A
130
130
64
(2)
ILM
TC = 25 °C
Continuous collector current
IC
TC = 80 °C
42
A
TSINK = 80 °C
25
TC = 25 °C
C = 80 °C
174
97
Power dissipation
PD
W
T
D1 - D4 HEXFRED ANTIPARALLEL DIODE
Single pulse forward current
IFSM
10 ms sine or 6 ms rectangular pulse, TJ = 25 °C
TC = 25 °C
180
46
A
A
Diode continuous forward current
IF
TC = 80 °C
30
TSINK = 80 °C
TC = 25 °C
17
187
105
Power dissipation
PD
W
TC = 80 °C
D2 - D3 SILICON CARBIDE ANTIPARALLEL DIODE
Single pulse forward current
IFSM
10 ms sine or 6 ms rectangular pulse, TJ = 25 °C
TC = 25 °C
150
40
A
A
Diode continuous forward current
IF
TC = 80 °C
28
TSINK = 80 °C
20
TC = 25 °C
C = 80 °C
140
79
Power dissipation
PD
W
T
Notes
•
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur.
(1)
VCC = 600 V, VGE = 15 V, L = 500 μH, Rg = 4.7 , TJ = 150 °C
(2)
VCC = 300 V, VGE = 15 V, L = 500 μH, Rg = 4.7 , TJ = 150 °C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Q1 - Q4 TRENCH IGBT 1200 V
Collector to emitter breakdown voltage
BVCES
VGE = 0 V, IC = 100 μA
VGE = 15 V, IC = 30 A
GE = 15 V, IC = 30 A, TJ = 125 °C
1200
-
-
2.52
-
-
-
2.12
2.31
4.6
Collector to emitter voltage
Gate threshold voltage
VCE(ON)
V
V
VGE(th)
VCE = VGE, IC = 1.0 mA
2.6
6.6
Temperature coefficient of threshold
voltage
VGE(th)/TJ
VCE = VGE, IC = 1 mA (25 °C to 125 °C)
-
- 14
-
mV/°C
Forward transconductance
Transfer characteristics
gfe
VCE = 20 V, IC = 30 A
VCE = 20 V, IC = 30 A
VGE = 0 V, VCE = 1200 V
-
-
-
-
-
36
7.1
0.001
0.5
-
-
-
S
V
VGE
0.23
-
Zero gate voltage collector current
Gate to emitter leakage current
ICES
IGES
mA
nA
V
GE = 0 V, VCE = 1200 V, TJ = 125 °C
VGE
=
30 V, VCE = 0 V
200
Revision: 16-Jun-16
Document Number: 94684
2
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ENQ030L120S
Vishay Semiconductors
www.vishay.com
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Q2 - Q3 TRENCH IGBT 600 V
Collector to emitter breakdown voltage
BVCES
VGE = 0 V, IC = 150 μA
VGE = 15 V, IC = 30 A
GE = 15 V, IC = 30 A, TJ = 125 °C
600
-
-
-
1.87
-
1.42
1.56
5.6
Collector to emitter voltage
Gate threshold voltage
VCE(ON)
V
V
-
VGE(th)
VCE = VGE, IC = 1.4 mA
3.6
7.1
Temperature coefficient of threshold
voltage
VGE(th)/TJ
VCE = VGE, IC = 1 mA (25 °C to 125 °C)
-
-17
-
mV/°C
Forward transconductance
Transfer characteristics
gfe
VCE = 20 V, IC = 30 A
VCE = 20 V, IC = 30 A
VGE = 0 V, VCE = 600 V
-
-
-
-
-
24
10
-
-
S
V
VGE
0.0003
0.028
-
0.23
-
Zero gate voltage collector current
ICES
IGES
mA
nA
V
GE = 0 V, VCE = 600 V, TJ = 125 °C
Gate to emitter leakage current
VGE 20 V, VCE = 0 V
=
200
D1 - D4 ANTIPARALLEL DIODE
IF = 20 A
-
-
2.42
2.32
3.18
-
V
Forward voltage drop
VFM
IF = 20 A, TJ = 125 °C
D2 - D3 ANTIPARALLEL DIODE
Forward voltage drop
IF = 20 A
-
-
1.54
1.86
1.8
-
VFM
V
IF = 20 A TJ = 125 °C
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
nC
Q1 - Q4 TRENCH IGBT (WITH FREEWHEELING D1 - D4 ANTIPARALLEL DIODE)
Total gate charge (turn-on)
Gate to emitter charge (turn-on)
Gate to collector charge (turn-on)
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on delay time
Rise time
Qg
Qge
Qgc
EON
EOFF
ETOT
td(on)
tr
-
-
-
-
-
-
-
-
-
-
-
-
157
21
-
-
-
-
-
-
-
-
-
-
-
-
IC = 30 A
VCC = 600 V
VGE = 15 V
69
0.52
0.9
mJ
IC = 30 A
V
V
1.42
93
CC = 600 V
GE = 15 V
Rg = 4.7
L = 500 μH (1)
39
ns
mJ
ns
Turn-off delay time
Fall time
td(off)
tf
133
156
0.64
1.61
2.24
93
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on delay time
Rise time
EON
EOFF
ETOT
td(on)
tr
IC = 30 A
VCC = 600 V
GE = 15 V
Rg = 4.7
L = 500 μH
TJ = 125 °C (1)
V
-
-
-
-
-
-
-
-
-
-
-
-
-
-
39
Turn-off delay time
Fall time
td(off)
tf
136
193
3338
124
75
Input capacitance
Cies
Coes
Cres
VGE = 0 V
VCC = 30 V
f = 1 MHz
Output capacitance
Reverse transfer capacitance
pF
TJ = 150 °C, IC = 120 A, VCC = 600 V,
VP = 1200 V, Rg = 4.7 , VGE = 15 V to 0 V
Reverse bias safe operating area
RBSOA
Fullsquare
Revision: 16-Jun-16
Document Number: 94684
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ENQ030L120S
Vishay Semiconductors
www.vishay.com
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
nC
Q2 - Q3 TRENCH IGBT (WITH FREEWHEELING EXTERNAL TO-247 DIODE DISCRETE 30ETH06)
Total gate charge (turn-on)
Gate to emitter charge (turn-on)
Gate to collector charge (turn-on)
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on delay time
Rise time
Qg
Qge
Qgc
EON
EOFF
ETOT
td(on)
tr
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
95
28
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IC = 48 A
VCC = 400 V
VGE = 15 V
35
0.23
0.26
0.49
70
mJ
IC = 30 A
VCC = 300 V
VGE = 15 V
Rg = 4.7
L = 500 μH (1)
31
ns
mJ
ns
Turn-off delay time
Fall time
td(off)
tf
91
87
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on delay time
Rise time
EON
EOFF
ETOT
td(on)
tr
0.33
0.48
0.61
70
IC = 30 A
VCC = 300 V
GE = 15 V
Rg = 4.7
L = 500 μH
TJ = 125 °C (1)
V
31
Turn-off delay time
Fall time
td(off)
tf
96
117
3025
245
90
Input capacitance
Cies
Coes
Cres
VGE = 0 V
VCC = 30 V
f = 1 MHz
Output capacitance
Reverse transfer capacitance
pF
TJ = 150 °C, IC = 130 A
Reverse bias safe operating area
RBSOA
V
CC = 300 V, VP = 600 V
Fullsquare
Rg = 4.7 , VGE = 15 V to 0 V
D1 - D4 ANTIPARALLEL DIODE
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
trr
Irr
-
-
-
-
-
-
103
16
-
-
-
-
-
-
ns
A
VR = 400 V
IF = 20 A
dl/dt = 500 A/μs
Qrr
trr
800
135
21
nC
ns
A
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
VR = 400 V
IF = 20 A
dl/dt = 500 A/μs, TJ = 125 °C
Irr
Qrr
1412
nC
D2 - D3 ANTIPARALLEL DIODE
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
trr
Irr
-
-
-
-
-
-
30
4.8
73
31
5
-
-
-
-
-
-
ns
A
VR = 200 V
IF = 20 A
dl/dt = 500 A/μs
Qrr
trr
nC
ns
A
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
VR = 200 V
IF = 20 A
dl/dt = 500 A/μs, TJ = 125 °C
Irr
Qrr
78
nC
Note
(1)
Energy losses include “tail” and diode reverse recovery.
Revision: 16-Jun-16
Document Number: 94684
4
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ENQ030L120S
Vishay Semiconductors
www.vishay.com
INTERNAL NTC - THERMISTOR SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUE
UNITS
R25
TC = 25 °C
5000
Resistance
R100
TC = 100 °C
493 5 ꢀ
B-value
B25/50
R2 = R25 exp. [B25/50 (1/T2 - 1/(298.15 K))]
3375 5 ꢀ
K
°C
Maximum operating temperature
Dissipation constant
Thermal time constant
220
2
mW/°C
s
8
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNITS
Q1 - Q4 TRENCH IGBT 1200 V - Junction to case thermal resistance (per switch)
Q2 - Q3 TRENCH IGBT 600 V- Junction to case thermal resistance (per switch)
D1 - D4 AP diode - Junction to case thermal resistance (per diode)
D2 - D3 AP diode - Junction to case thermal resistance (per diode)
Q1 - Q4 TRENCH IGBT 1200 V - Case to sink thermal resistance (per switch)
Q2 - Q3 TRENCH IGBT 600 V - Case to sink thermal resistance (per switch)
D1 - D4 AP diode - Case to sink thermal resistance (per diode)
D2 - D3 AP diode - Case to sink thermal resistance (per diode)
Case to sink thermal resistance (per module)
-
-
-
-
-
-
-
-
-
2
-
-
-
0.58
0.72
RthJC
-
0.67
-
0.89
0.75
0.77
0.78
0.65
0.1
-
-
-
-
-
-
3
-
°C/W
(1)
RthCS
Mounting torque (M4)
Nm
g
Weight
28
Note
(1)
Mounting surface flat, smooth, and greased
60
55
50
45
60
55
50
45
40
35
30
25
20
15
10
5
V
GE = 9 V
TJ = 25 °C
VGE = 12 V
VGE = 15 V
VGE = 18 V
40
35
30
25
TJ = 125 °C
TJ = 150 °C
20
15
10
5
0
0
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VCE (V)
VCE (V)
Fig. 2 - Typical Q1 - Q4 Trench IGBT 1200 V
Output Characteristics TJ = 125 °C
Fig. 1 - Typical Q1 - Q4 Trench IGBT 1200 V
Output Characteristics VGE = 15 V
Revision: 16-Jun-16
Document Number: 94684
5
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ENQ030L120S
Vishay Semiconductors
www.vishay.com
160
140
120
100
80
10
1
TJ = 150 °C
TJ = 125 °C
DC
0.1
0.01
0.001
0.0001
60
40
TJ = 25 °C
20
0
0
10
20
30
40
50
60
70
100 200 300 400 500 600 700 800 900 1000 1100 1200
IC - Continuous Collector Current (A)
Fig. 3 - Maximum Q1 - Q4 Trench IGBT 1200 V
VCES (V)
Fig. 6 - Typical Q1 - Q4 Trench IGBT 1200 V
Zero Gate Voltage Collector Current
Continuous Collector Current vs. Case Temperature
60
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
VCE = 20 V
55
50
45
40
35
Eoff
TJ = 125 °C
30
25
20
15
10
5
TJ = 25 °C
Eon
0
4.0
5.0
6.0
7.0
8.0
9.0
0
10
20
30
40
50
60
70
VGE (V)
IC (A)
Fig. 4 - Typical Q1 - Q4 Trench IGBT 1200 V
Transfer Characteristics
Fig. 7 - Typical Q1 - Q4 Trench IGBT 1200 V
Energy Loss vs. IC (with D1 - D4 Freewheeling Diode),
TJ = 125 °C, VCC = 600 V, Rg = 4.7 , VGE = 15 V, L = 500 μH
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1000
TJ = 25 °C
tf
td(off)
100
TJ = 125 °C
td(on)
tr
10
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
10
20
30
40
50
60
70
IC (mA)
IC (A)
Fig. 8 - Typical Q1 - Q4 Trench IGBT 1200 V
Fig. 5 - Typical Q1 - Q4 Trench IGBT 1200 V
Gate Threshold Voltage
Switching Time vs. IC (with D1 - D4 Freewheeling Diode)
TJ = 125 °C, VCC = 600 V, Rg = 4.7 , VGE = 15 V, L = 500 μH
Revision: 16-Jun-16
Document Number: 94684
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ENQ030L120S
Vishay Semiconductors
www.vishay.com
3.5
3.0
2.5
2.0
1.5
1.0
0.5
160
140
120
100
80
60
40
20
0
Eoff
0
5
10 15 20 25 30 35 40 45 50 55
0
10
20
30
40
50
60
Rg (Ω)
IF - Continuous Forward Current (A)
Fig. 9 - Typical Q1 - Q4 Trench IGBT 1200 V
Energy Loss vs. Rg (with D1 - D4 Freewheeling Diode)
TJ = 125 °C, VCC = 600 V, IC = 30 A, VGE = 15 V, L = 500 μH
Fig. 12 - Maximum D1 - D4 Antiparallel Diode
Forward Current vs. Case Temperature
1000
270
250
230
210
190
170
150
130
110
90
td(on)
td(off)
125 °C
tf
100
tr
25 °C
10
100
200
300
400
500
0
5
10 15 20 25 30 35 40 45 50 55
Rg (Ω)
dIF/dt (A/μs)
Fig. 10 - Typical Q1 - Q4 Trench IGBT 1200 V
Switching Time vs. Rg (with D1 - D4 Freewheeling Diode)
TJ = 125 °C, VCC = 600 V, IC = 30 A, VGE = 15 V, L = 500 μH
Fig. 13 - Typical D1 - D4 Antiparallel Diode
Reverse Recovery Time vs. dIF/dt
V
rr = 400 V, IF = 20 A
60
50
40
24
22
20
18
16
14
12
10
8
125 °C
TJ = 125 °C
TJ = 150 °C
30
20
25 °C
10
TJ = 25 °C
6
0
4
100
200
300
400
500
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
dIF/dt (A/μs)
VFM (V)
Fig. 11 - Typical D1 - D4 Antiparallel Diode Forward Characteristics
Fig. 14 - Typical D1 - D4 Antiparallel Diode
Reverse Recovery Current vs. dIF/dt
V
rr = 400 V, IF = 20 A
Revision: 16-Jun-16
Document Number: 94684
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ENQ030L120S
Vishay Semiconductors
www.vishay.com
1700
1500
1300
1100
900
125 °C
700
25 °C
500
300
100
200
300
400
500
dIF/dt (A/μs)
Fig. 15 - Typical D1 - D4 Antiparallel Diode
Reverse Recovery Charge vs. dIF/dt
Vrr = 400 V, IF = 20 A
10
1
0.1
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
DC
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
t1 - Rectangular Pulse Duration (s)
Fig. 16 - Maximum Thermal Impedance ZthJC Characteristics (Q1 - Q4 Trench IGBT 1200 V)
10
1
0.1
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
DC
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
t1 - Rectangular Pulse Duration (s)
Fig. 17 - Maximum Thermal Impedance ZthJC Characteristics (D1 - D4 Antiparallel Diode)
Revision: 16-Jun-16
Document Number: 94684
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ENQ030L120S
Vishay Semiconductors
www.vishay.com
60
55
50
45
40
35
30
25
20
15
10
5
60
55
50
45
40
35
30
25
VCE = 20 V
TJ = 25 °C
TJ = 125 °C
TJ = 150 °C
TJ = 125 °C
20
15
10
5
TJ = 25 °C
0
0
0
0.5
1
1.5
2
2.5
3
5
6
7
8
9
10
11
12
13
VGE (V)
VCE (V)
Fig. 18 - Typical Q2 - Q3 Trench IGBT 600 V Output Characteristics
Fig. 21 - Typical Q2 - Q3 Trench IGBT 600 V
Transfer Characteristics
VGE = 15 V
60
55
50
45
40
35
30
25
20
15
10
5
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
TJ = 25 °C
V
GE = 18 V
VGE = 15 V
VGE = 12 V
VGE = 9 V
TJ = 125 °C
0
0
0.5
1.0
1.5
2.0
2.5
3.0
0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9
IC (mA)
VCE (V)
Fig. 22 - Typical Q2 - Q3 Trench IGBT 600 V
Gate Threshold Voltage
Fig. 19 - Typical Q2 - Q3 Trench IGBT 600 V Output Characteristics
TJ = 125 °C
1
160
140
120
TJ = 150 °C
TJ = 125 °C
0.1
0.01
DC
100
80
60
40
20
0
0.001
TJ = 25 °C
0.0001
0.00001
100
200
300
400
500
600
0
10
20
30
40
50
60
70
80
VCES (V)
IC - Continuous Collector Current (A)
Fig. 23 - Typical Q2 - Q3 Trench IGBT 600 V
Zero Gate Voltage Collector Current
Fig. 20 - Maximum Q2 - Q3 Trench IGBT 600 V
Continuous Collector Current vs. Case Temperature
Revision: 16-Jun-16
Document Number: 94684
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VS-ENQ030L120S
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60
55
50
45
40
35
30
25
20
15
10
5
1000
100
10
TJ = 25 °C
TJ = 150 °C
tf
TJ = 125 °C
td(off)
td(on)
tr
0
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
0
10
20
30
40
50
60
70
IC (A)
VFM (V)
Fig. 24 - Typical D2 - D3 Antiparallel Diode
Forward Characteristics
Fig. 27 - Typical Q2 - Q3 Trench IGBT 600 V Switching Time vs. IC
(with Freewheeling External TO-247 Diode Discrete 30ETH06)
TJ = 125 °C, VCC = 300 V, Rg = 4.7 , VGE = 15 V, L = 500 μH
160
140
120
100
80
0.80
0.75
0.70
0.65
0.60
0.55
Eoff
0.50
0.45
0.40
0.35
60
40
0.30
Eon
20
0.25
0.20
0
0
5
10 15 20 25 30 35 40 45 50
0
5
10 15 20 25 30 35 40 45 50 55
IF - Continuous Forward Current (A)
Rg (Ω)
Fig. 25 - Maximum D2 - D3 Antiparallel Diode
Forward Current vs. Case Temperature
Fig. 28 - Typical Q2 - Q3 Trench IGBT 600 V Energy Loss vs. Rg
(with Freewheeling External TO-247 Diode Discrete 30ETH06)
TJ = 125 °C, VCC = 300 V, IC =30 A, VGE = 15 V, L = 500 μH
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
1000
td(on)
td(off)
Eoff
100
tf
Eon
tr
10
0
10
20
30
40
50
60
70
0
5
10 15 20 25 30 35 40 45 50 55
IC (A)
Rg (Ω)
Fig. 26 - Typical Q2 - Q3 Trench IGBT 600 V Energy Loss vs. IC
(with Freewheeling External TO-247 Diode Discrete 30ETH06 )
TJ = 125 °C, VCC = 300 V, Rg = 4.7 , VGE = 15 V, L = 500 μH
Fig. 29 - Typical Q2 - Q3 Trench IGBT 600 V Switching Time vs. Rg
(with Freewheeling External TO-247 Diode Discrete 30ETH06)
TJ = 125 °C, VCC = 300 V, IC = 30 A, VGE = 15 V, L = 500 μH
Revision: 16-Jun-16
Document Number: 94684
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80
75
70
65
60
55
50
45
40
35
30
25
20
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
125 °C
125 °C
25 °C
25 °C
100
200
300
400
500
100
200
300
400
500
dIF/dt (A/μs)
dIF/dt (A/μs)
Fig. 30 - Typical D2 - D3 Antiparallel Diode
Reverse Recovery Time vs. dIF/dt
Fig. 31 - Typical D2 - D3 Antiparallel Diode
Reverse Recovery Current vs. dIF/dt
V
rr = 200 V, IF = 20 A
Vrr = 200 V, IF = 20 A
90
85
80
75
70
65
60
125 °C
25 °C
100
200
300
400
500
dIF/dt (A/μs)
Fig. 32 - Typical D2 - D3 Antiparallel Diode
Reverse Recovery Charge vs. dIF/dt
Vrr = 200 V, IF = 20 A
10
1
0.1
0.01
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
DC
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
t1 - Rectangular Pulse Duration (s)
Fig. 33 - Maximum Thermal Impedance ZthJC Characteristics (Q2 - Q3 Trench IGBT 600 V)
Revision: 16-Jun-16
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10
1
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
DC
0.1
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t1 - Rectangular Pulse Duration (s)
Fig. 34 - Maximum Thermal Impedance ZthJC Characteristics (D2 - D3 Antiparallel Diode)
ORDERING INFORMATION TABLE
Device code
VS- EN
Q
030
L
120
S
1
2
3
4
5
6
7
1
2
3
4
5
6
7
-
-
-
-
-
-
-
Vishay Semiconductors product
Package indicator (EN = EMIPAK-1B)
Circuit configuration (Q = neutral point clamp topology)
Current rating (030 = 30 A)
Switch die technology (L = ultrafast Trench IGBT 1200 V and Trench IGBT 600 V)
Voltage rating (120 = 1200 V)
Diode die technology (S = SiC diode)
Revision: 16-Jun-16
Document Number: 94684
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CIRCUIT CONFIGURATION
DC+
DC+
T1
T2
E3 G3
Q1
Q4
D1
D4
Q3
G1
E1
D2
BR
BR
BR
M
M
D3
Q2
G4
E4
DC-
DC-
PACKAGE
16
16
12.8
9.6
12.8
3.2
3.2
T1 T2
E1
BR BR BR
G4 E4
G3 E3
E2 G2
G1
DC-
DC-
DC+ DC+
M
M
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95558
Revision: 16-Jun-16
Document Number: 94684
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Outline Dimensions
Vishay Semiconductors
www.vishay.com
EMIPAK-1B PressFit
DIMENSIONS in millimeters
48 0.3
62.8 0.5
53 0.15
42.5 0.2
37 0.5
3.2
3.2
Pin position
0.4
6.4
9.6
12.8
16
6.4
9.6
12.8
16
Revision: 27-Jun-14
Document Number: 95558
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Legal Disclaimer Notice
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Revision: 13-Jun-16
Document Number: 91000
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