ES1PD-HE3 [VISHAY]
Rectifier Diode, 1 Element, 1A, 200V V(RRM),;
| 型号： | ES1PD-HE3 |
| 厂家： | 
VISHAY |
| 描述： | Rectifier Diode, 1 Element, 1A, 200V V(RRM), 二极管 |
| 文件： | 总4页 (文件大小：326K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ES1PB, ES1PC & ES1PD
New Product
Vishay General Semiconductor
High Current Density Surface Mount Ultrafast Rectifiers
Major Ratings and Characteristics
IF(AV)
VRRM
trr
1 A
100 V, 150 V, 200 V
15 ns
VF
0.92 V
Tj max.
150 °C
DO-220AA (SMP)
Features
Mechanical Data
• Very low profile - typical height of 1.0 mm
Case: DO-220AA (SMP)
Epoxy meets UL 94V-0 flammability rating
• Ideal for automated placement
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade
• Glass passivated chip junction
• Ultrafast recovery times for high efficiency
• Low forward voltage, low power losses
• Low thermal resistance
• Meets MSL level 1 per J-STD-020C
• Solder Dip 260 °C, 40 seconds
Polarity: Color band denotes the cathode end
Typical Applications
For ues in secondary rectification and freewheeling
for ultrafast switching speeds of ac-to-dc and dc-to-dc
converters for both consumer and automotive appli-
cations.
Maximum Ratings
(TA = 25 °C unless otherwise specified)
Parameter
Symbol
ES1PB
EB
ES1PC
EC
ES1PD
ED
Unit
Device marking code
Maximum repetitive peak reverse voltage
VRRM
IF(AV)
IFSM
100
150
200
V
A
A
Maximum average forward rectified current see Fig. 1
1.0
30
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 150
°C
Document Number 88918
10-Nov-05
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1
ES1PB, ES1PC & ES1PD
Vishay General Semiconductor
Electrical Characteristics
(TA = 25 °C unless otherwise specified)
Parameter
Test condition
Symbol
VF
Value
Unit
V
Maximum instantaneous forward at IF = 0.6 A, TJ = 25 °C
0.865
0.920
voltage
at IF = 1 A, TJ = 25 °C
Maximum reverse current at
TJ = 25 °C
IR
5.0
500
µA
(1)
TJ = 125 °C
rated VR
Maximum reverse recovery time at IF = 0.5 A, IR = 1 A, Irr = 0.25 A
trr
trr
15
ns
ns
Typical reverse recovery time
Typical reverse recovery time
Typical junction capacitance
at IF = 1.0 A, VR = 30 V di/dt = 50 A/µs, Irr = 10 % IRM TJ = 25 °C
25
30
at IF = 1.0 A, VR = 30 V di/dt = 50 A/µs, Irr = 10 % IRM TJ = 100 °C
at IF = 1.0 A, VR = 30 V di/dt = 50 A/µs, Irr = 10 % IRM TJ = 25 °C
at IF = 1.0 A, VR = 30 V di/dt = 50 A/µs, Irr = 10 % IRM TJ = 100 °C
QRR
CJ
8
10
nC
pF
at 4.0 V, 1 MHz
10
Thermal Characteristics
(TA = 25 °C unless otherwise specified)
Parameter
Typical thermal resistance (2)
Symbol
RθJA
RθJL
ES1PB
ES1PC
105
15
ES1PD
Unit
°C/W
RθJC
20
Notes:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
(2) Thermal resistance from junction to ambient and junction to lead mounted on P.C.B. with 5.0 x 5.0 mm copper pad areas. RθJL is
measured at the terminal of cathode band. RθJC is measured at the top centre of the body
Ratings and Characteristics Curves
(TA = 25 °C unless otherwise specified)
1.2
1.0
0.8
0.6
0.4
30
25
20
15
10
05
TL measured
at the cathode band terminal
0.2
0
0
80
90
100
110
120
(°C)
130
140
150
1
10
100
Lead
Temperature
Number of Cycles at 50 Hz
Figure 1. Maximum Forward Current Derating Curve
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
www.vishay.com
Document Number 88918
10-Nov-05
2
ES1PB, ES1PC & ES1PD
Vishay General Semiconductor
100
10
100
TJ = 150 °C
1
10
TJ = 25 °C
0.1
TJ = 125 °C
0.8
0.01
1
0.2
0.4
0.6
1.0
1.2
1.4
0.1
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 5. Typical Junction Capacitance
10000
1000
100
TJ = 150 °C
1000
100
TJ = 125 °C
10
1
10
TJ = 25 °C
0.1
1
0.01
0.01
0.1
1
10
100
10
20
30
40 50
60
70
80
90
100
Percent of Rated Peak Reverse Voltag (%)
t, Pulse Duration (sec.)
Figure 4. Typical Reverse Leakage Characteristics
Figure 6. Typical Transient Thermal Impedance
Package dimensions in inches (millimeters)
DO-220AA (SMP)
0.012 (0.30) REF
Cathode band
0.036 (0.91)
0.024 (0.61)
0.053 (1.35)
0.041 (1.05)
0.086 (2.18)
0.074 (1.88)
0.032 (0.80)
0.016 (0.40)
0.103 (2.60)
0.087 (2.20)
0.142 (3.61)
0.126 (3.19)
0.158 (4.00)
0.146 (3.70)
0.030
(0.762)
0.105
(2.67)
0.025
(0.635)
0.013 (0.35)
0.004 (0.10)
0.045 (1.15)
0.033 (0.85)
0.050
(1.27)
0.100
(2.54)
0.012 (0.30)
0.000 (0.00)
0.018 (0.45)
0.006 (0.15)
Document Number 88918
10-Nov-05
www.vishay.com
3
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
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