ES2A-E3 [VISHAY]

Rectifier Diode, 1 Phase, 1 Element, 2A, 50V V(RRM), Silicon, DO-214AA, LEAD FREE, PLASTIC, SMB, 2 PIN;
ES2A-E3
型号: ES2A-E3
厂家: VISHAY    VISHAY
描述:

Rectifier Diode, 1 Phase, 1 Element, 2A, 50V V(RRM), Silicon, DO-214AA, LEAD FREE, PLASTIC, SMB, 2 PIN

文件: 总4页 (文件大小:312K)
中文:  中文翻译
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ES2A thru ES2D  
Vishay General Semiconductor  
Surface Mount Ultrafast Plastic Rectifier  
Major Ratings and Characteristics  
IF(AV)  
VRRM  
IFSM  
trr  
2.0 A  
50 V to 200 V  
50 A  
20 ns  
VF  
0.90 V  
Tj max.  
150 °C  
DO-214AA (SMB)  
Features  
Mechanical Data  
• Glass passivated chip junction  
Case: DO-214AA (SMB)  
• Ideal for automated placement  
Epoxy meets UL 94V-0 Flammability rating  
• Ultrafast recovery times for high efficiency  
• Low forward voltage, low power losses  
• High forward surge capability  
• Meets MSL level 1, per J-STD-020C  
• Solder Dip 260 °C, 40 seconds  
Terminals: Matte tin plated leads, solderable per  
J-STD-002B and JESD22-B102D  
E3 suffix for commercial grade, HE3 suffix for high  
reliability grade (AEC Q101 qualified)  
Polarity: Color band denotes cathode end  
Typical Applications  
For use in high frequency rectification and freewheel-  
ing application in switching mode converters and  
inverters for consumer, computer, automotive and  
Telecommunication  
Maximum Ratings  
TA = 25 °C unless otherwise specified  
Parameter  
Device marking code  
Symbol  
ES2A  
EA  
ES2B  
EB  
ES2C  
EC  
ES2D  
ED  
Unit  
Maximum repetitive peak reverse voltage  
VRRM  
VRMS  
VDC  
50  
100  
150  
200  
V
V
V
A
A
Maximum RMS voltage  
35  
50  
70  
105  
150  
140  
200  
Maximum DC blocking voltage  
100  
Maximum average forward rectified current at TL = 110 °C  
IF(AV)  
IFSM  
2.0  
50  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
Operating junction and storage temperature range  
TJ, TSTG  
- 55 to + 150  
°C  
Document Number 88587  
24-Oct-05  
www.vishay.com  
1
ES2A thru ES2D  
Vishay General Semiconductor  
Electrical Characteristics  
TA = 25 °C unless otherwise specified  
Parameter  
Maximum  
instantaneous forward  
voltage  
Test condition  
Symbol  
VF  
ES2A  
ES2B  
ES2C  
ES2D  
Unit  
V
at 2.0 A(1)  
0.90  
Maximum DC reverse  
current at rated DC  
blocking voltage  
TA = 25 °C  
TA = 100 °C  
IR  
10  
350  
µA  
Max. reverse recovery IF = 0.5 A, IR = I.0 A,  
trr  
trr  
20  
ns  
ns  
time  
lrr = 0.25 A  
Maximum reverse  
recovery time  
IF = 2.0 A, VR = 30 V,  
TJ = 25 °C  
TJ = 100 °C  
30  
50  
di/dt = 50 A/µs,  
Ir = 10 % IRM  
Maximum stored  
charge  
IF = 2.0 A, VR = 30 V,  
TJ = 25 °C  
TJ = 100 °C  
Qrr  
CJ  
10  
25  
nC  
pF  
di/dt = 50 A/µs,  
Ir = 10 % IRM  
Typical junction  
capacitance  
at 4.0 V, 1 MHz  
18  
Notes:  
(1) Pulse test: 300 ms pulse width, 1 % duty cycle  
Thermal Characteristics  
TA = 25 °C unless otherwise specified  
Parameter  
Typical thermal resistance(1)  
Symbol  
RθJA  
RθJL  
ES2A  
ES2B  
ES2C  
ES2D  
Unit  
75  
20  
°C/W  
Notes:  
(1) Units mounted on P.C.B. 5.0 x 5.0 mm (0.013 mm thick) land areas  
Ratings and Characteristics Curves  
(TA = 25 °C unless otherwise specified)  
3.0  
2.0  
1.0  
60  
8.3 ms Single Half Sine-Wave  
at T = 110 °C  
L
50  
40  
30  
20  
10  
Resistive or Inductive Load  
P.C.B. Mounted on 0.2 x 0.2"  
(5.0 x 5.0mm) Copper Pad Areas  
0
0
1
80  
90  
100  
110  
120  
130  
140  
150  
10  
Number of Cycles at 60 Hz  
100  
Lead Temperature (°C)  
Figure 1. Maximum Forward Current Derating Curve  
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current  
www.vishay.com  
Document Number 88587  
24-Oct-05  
2
ES2A thru ES2D  
Vishay General Semiconductor  
100  
10  
60  
50  
40  
30  
20  
10  
0
TJ = 25 °C  
f = 1.0 MHz  
Vsig = 50mVp-p  
Tj = 150 °C  
Tj = 125 °C  
1
Tj = 100 °C  
0.1  
Tj = 25 °C  
0.01  
0.1  
1
10  
100  
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
Instantaneous Forward Voltage (V)  
Reverse Voltage (V)  
Figure 3. Typical Instantaneous Forward Characteristics  
Figure 5. Typical Junction Capacitance  
10000  
Tj = 150 °C  
1000  
Tj = 125 °C  
Tj = 100 °C  
100  
10  
Tj = 25 °C  
1
0.1  
0
20  
40  
60  
80  
100  
Percent of Rated Peak Reverse Voltage (%)  
Figure 4. Typical Reverse Leakage Characteristics  
Package outline dimensions in inches (millimeters)  
DO-214AA (SMB)  
Mounting Pad Layout  
Cathode Band  
0.085 MAX.  
(2.159 MAX.)  
0.086 (2.20)  
0.155 (3.94)  
0.130 (3.30)  
0.077 (1.95)  
0.086 MIN.  
(2.18 MIN.)  
0.180 (4.57)  
0.060 MIN.  
(1.52 MIN.)  
0.160 (4.06)  
0.012 (0.305)  
0.006 (0.152)  
0.220 REF  
0.096 (2.44)  
0.084 (2.13)  
0.060 (1.52)  
0.030 (0.76)  
0.008 (0.2)  
0 (0)  
0.220 (5.59)  
0.205 (5.21)  
Document Number 88587  
24-Oct-05  
www.vishay.com  
3
Legal Disclaimer Notice  
Vishay  
Notice  
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,  
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.  
Information contained herein is intended to provide a product description only. No license, express or implied, by  
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's  
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express  
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness  
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.  
Customers using or selling these products for use in such applications do so at their own risk and agree to fully  
indemnify Vishay for any damages resulting from such improper use or sale.  
Document Number: 91000  
Revision: 08-Apr-05  
www.vishay.com  
1

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