ES3G [VISHAY]

SURFACE MOUNT ULTRAFAST EFFICIENT PLASTIC RECTIFIER; 表面贴装超快高效塑封整流


型号：	ES3G
厂家：	VISHAY
描述：	SURFACE MOUNT ULTRAFAST EFFICIENT PLASTIC RECTIFIER 表面贴装超快高效塑封整流二极管光电二极管 IOT 超快速恢复二极管
文件：	总2页 (文件大小：77K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

NEW PRODUCT

ES3F AND ES3G

SURFACE MOUNT ULTRAFAST EFFICIENT PLASTIC RECTIFIER

Reverse Voltage - 300 to 400 Volts

Forward Current - 3.0 Amperes

DO-214AB

FEATURES

♦ Plastic package has Underwriters Laboratory

Flammability Classification 94V-0

♦ For surface mount applications

♦ Low profile package

0.126 (3.20)

0.114 (2.90)

0.245 (6.22)

0.220 (5.59)

♦ Built-in strain relief

♦ Ideal for automated placement

♦ Easy pick and place

♦ Superfast recovery time for high efficiency

♦ Glass passivated chip junction

♦ High temperature soldering:

250°C/10 seconds at terminals

0.280 (7.11)

0.260 (6.60)

0.012 (0.305)

0.006 (0.152)

0.103 (2.62)

0.079 (2.06)

MECHANICAL DATA

Case: JEDEC DO-214AB molded plastic body over

passivated chip

Terminals: Solder plated, solderable per MIL-STD-750,

Method 2026

0.060 (1.52)

0.030 (0.76)

0.008 (0.203)

MAX.

0.320 (8.13)

0.305 (7.75)

Polarity: Color band denotes cathode end

Weight: 0.007 ounces, 0.21 gram

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified.

SYMBOLS

ES3F

ES3G

UNITS

Device marking code

Maximum repetitive peak reverse voltage

Working peak reverse voltage

V_RRM

V_RWM

V_RMS

V_DC

300

225

210

300

400

300

280

400

Volts

Amps

Maximum RMS voltage

Maximum DC blocking voltage

Maximum average forward rectified current at T_L=100°C

I_(AV)

3.0

100

1.10

Peak forward surge current

8.3ms single half sine-wave superimposed on

rated load (JEDEC Method) at T_L=100°C

I_FSM

Amps

Maximum instantaneous forward voltage at 3.0A

V_F

I_R

Volts

Maximum DC reverse current

at working peak reverse voltage

T_A=25°C

T_A=100°C

10.0

350

µA

Maximum reverse recovery time _{(NOTE 1)}

Maximum reverse recovery time _{(NOTE 2)}

t_rr

3.0

Maximum reverse recovery current _{(NOTE 2)}

Maximum stored charge _{(NOTE 2)}

I_RM

Q_rr

C_J

Amps

Typical junction capacitance _{(NOTE 3)}

Typical thermal resistance _{(NOTE 4)}

R_ΘJA

R_ΘJL

°C/W

°C

Operating junction and storage temperature range

T_J, T_STG

-55 to +150

NOTES:

(1) Reverse recovery test conditions: I_F=0.5A, I_R=1.0A, I_rr=0.25A

(2) Measured at I_F=1.0A, di/dt=100A/µs, V_R=30V, I_rr=0.1I_RM

(3) Measured at 1.0 MH_Zand applied reverse voltage of 4.0 Volts

(4) Units mounted on P.C.B. with 0.31 x 0.31” (8.0 x 8.0mm) copper pad areas

NOTICE: Advanced product information is subject to change without notice

4/98

RATING AND CHARACTERISTIC CURVES ES3F AND ES3G

FIG. 2 - MAXIMUM NON-REPETITIVE PEAK

FORWARD SURGE CURRENT

FIG. 1 - MAXIMUM FORWARD CURRENT

DERATING CURVE

150

125

100

3.0

2.0

1.0

RESISTIVE OR INDUCTIVE LOAD

8.3ms SINGLE HALF SINE-WAVE

(JEDEC Method) at T =100°C

100

100 110 120 130 140 150

NUMBER OF CYCLES AT 60 H_Z

LEAD TEMPERATURE, °C

FIG. 3 - TYPICAL INSTANTANEOUS

FORWARD CHARACTERISTICS

FIG. 4 - TYPICAL REVERSE

CHARACTERISTICS

100

1,000

100

T =125°C

T =25°C

PULSE WIDTH=300µs

1% DUTY CYCLE

T =100°C

T =25°C

0.1

0.01

0.4

0.6

0.8

1.0

1.2

1.4

1.6

100

PERCENT OF RATED PEAK REVERSE

VOLTAGE, %

INSTANTANEOUS FORWARD VOLTAGE,

VOLTS

FIG. 5 - REVERSE SWITCHING

CHARACTERISTICS

FIG. 6 - TYPICAL JUNCTION CAPACITANCE

100

200

160

120

T =25°C

f=1.0 MH

Vsig=50mVp-p

@5A,50A/µs

@2A,20A/µs

@5A,50A/µs

@2A,20A/µs

@1A,100A/µs

100

JUNCTION TEMPERATURE, °C

150

125

175

0.1

100

REVERSE VOLTAGE, VOLTS

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