FA38SA50LCP [VISHAY]
Power MOSFET, 38 A; 功率MOSFET ，一个38
| 型号： | FA38SA50LCP |
| 厂家： | 
VISHAY |
| 描述： | Power MOSFET, 38 A |
| 文件： | 总9页 (文件大小：199K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FA38SA50LCP
Vishay Semiconductors
Power MOSFET, 38 A
FEATURES
• Fully isolated package
• Easy to use and parallel
• Low on-resistance
• Dynamic dV/dt rating
• Fully avalanche rated
SOT-227
• Simple drive requirements
• Low drain to case capacitance
• Low internal inductance
• UL pending
• Compliant to RoHS directive 2002/95/EC
• Designed for industrial level
PRODUCT SUMMARY
VDSS
RDS(on)
ID
500 V
0.13 Ω
DESCRIPTION
Third Generation Power MOSFETs from Vishay HPP provide
the designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
38 A
Type
Modules - MOSFET
SOT-227
Package
The SOT-227 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 500 W. The low thermal resistance
of the SOT-227 contribute to its wide acceptance
throughout the industry.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
MAX.
UNITS
TC = 25 °C
38
Continuous drain current at VGS 10 V
ID
T
C = 100 °C
24
A
(1)
Pulsed drain current
IDM
150
Power dissipation
PD
TC = 25 °C
500
W
W/°C
V
Linear derating factor
Gate to source voltage
Single pulse avalanche energy
Avalanche current
4.0
VGS
20
(2)
EAS
580
mJ
A
(1)
IAR
38
(1)
Repetitive avalanche energy
Peak diode recovery dV/dt
EAR
50
mJ
V/ns
°C
dV/dt (3)
10
- 55 to + 150
2.5
Operating junction and storage temperature range TJ, TStg
Insulation withstand voltage (AC-RMS)
Mounting torque
VISO
kV
M4 screw
1.3
Nm
Notes
(1)
(2)
(3)
Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
Starting TJ = 25 °C, L = 0.80 mH, Rg = 25 Ω, IAS = 38 A (see fig. 12)
ISD ≤ 38 A, dI/dt ≤ 410 A/μs, VDD ≤ V(BR)DSS, TJ ≤ 150 °C
Document Number: 94547
Revision: 11-May-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
FA38SA50LCP
Vishay Semiconductors
Power MOSFET, 38 A
THERMAL RESISTANCE
PARAMETER
SYMBOL
TYP.
-
MAX.
0.25
-
UNITS
Junction to case
RthJC
RthCS
°C/W
Case to sink, flat, greased surface
0.05
ELECTRICAL CHARACTERISTCS (TJ = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Drain to source breakdown voltage
V(BR)DSS
VGS = 0 V, ID = 1.0 mA
500
-
-
V
Breakdown voltage temperature
coefficient
ΔV(BR)DSS/ΔTJ
Reference to 25 °C, ID = 1 mA
-
0.66
-
V/°C
(1)
Static drain to source on-resistance
Gate threshold voltage
RDS(on)
VGS = 10 V, ID = 23 A
VDS = VGS, ID = 250 μA
VDS = 25 V, ID = 23 A
VDS = 500 V, VGS = 0 V
-
2.0
22
-
-
-
0.13
4.0
-
Ω
V
VGS(th)
gfs
Forward transconductance
-
S
-
50
500
200
- 200
420
55
220
-
Drain to source leakage current
IDSS
μA
nA
V
DS = 400 V, VGS = 0 V, TJ = 125 °C
VGS = 20 V
GS = - 20 V
-
-
Gate to source forward leakage
Gate to source reverse leakage
Total gate charge
-
-
IGSS
V
-
-
Qg
Qgs
Qgd
td(on)
tr
-
280
37
150
42
340
200
330
ID = 38 A
VDS = 400 V
Gate to source charge
Gate to drain ("Miller") charge
Turn-on delay time
-
nC
ns
V
GS = 10 V; see fig. 6 and 13 (1)
-
-
VDD = 250 V
ID = 38 A
Rise time
-
-
Rg = 10 Ω (ιντερναλ)
Turn-off delay time
td(off)
tf
-
-
R
D = 8 Ω, see fig. 10 (1)
Fall time
-
-
Between lead, and center of die
contact
Internal source inductance
LS
-
5.0
-
nH
pF
Input capacitance
Ciss
Coss
Crss
-
-
-
6900
1600
580
-
-
-
VGS = 0 V
Output capacitance
V
DS = 25 V
f = 1.0 MHz, see fig. 5
Reverse transfer capacitance
Note
(1)
Pulse width ≤ 300 μs, duty cycle ≤ 2 %
SOURCE-DRAIN RATINGS AND CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Continuous source current
(body diode)
D
S
IS
-
-
38
MOSFET symbol
showing the integral reverse
p-n junction diode.
A
G
(1)
Pulsed source current (body diode)
ISM
-
-
150
(2)
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Forward turn-on time
VSD
TJ = 25 °C, IS = 38 A, VGS = 0 V
-
-
-
-
1.3
1300
22
V
trr
830
15
ns
μC
TJ = 25 °C, IF = 38 A; dI/dt = 100 A/μs (2)
Qrr
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS + LD)
Notes
(1)
Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
Pulse width ≤ 300 μs, duty cycle ≤ 2 %
(2)
www.vishay.com
2
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94547
Revision: 11-May-10
FA38SA50LCP
Vishay Semiconductors
Power MOSFET, 38 A
1000
100
10
3.0
2.5
2.0
1.5
1.0
0.5
VGS
15V
10V
38A
=
I
D
TOP
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
4.5V
10
20μs PULSE WIDTH
= 25°C
T
C
V
=10V
GS
1
A
0.0
-60 -40 -20
1
100
0
20 40 60 80 100 120 140 160
°
V
, Drain-to-Source Voltage (V)
T , Junction Temperature( C)
J
DS
Fig. 1 - Typical Output Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
16000
1000
100
10
V
= 0V,
f = 1MHz
C SHORTED
ds
GS
VGS
TOP
15V
C
= C + C
iss
gs
gd ,
10V
14000
12000
10000
8000
6000
4000
2000
0
C
= C
8.0V
7.0V
6.0V
5.5V
5.0V
rss
gd
C
= C + C
oss
ds
gd
BOTTOM 4.5V
C
C
iss
oss
rss
C
4.5V
10
20μs PULSE WIDTH
°
T = 150 C
J
1
100
1
10
100
V
, Drain-to-Source Voltage (V)
DS
V
, Drain-to-Source Voltage (V)
DS
Fig. 2 - Typical Output Characteristics
Fig. 5 - Typical Capacitance vs.
Drain to Source Voltage
1000
100
10
20
16
12
8
I
D
= 38A
V
V
V
= 400V
= 250V
= 100V
DS
DS
DS
°
T = 150 C
J
°
T = 25 C
J
4
FOR TEST CIRCUIT
SEE FIGURE 13
V
= 50V
DS
20μs PULSE WIDTH
0
1
0
80
Q
160
240
320
400
4
5
6
7
8
, Total Gate Charge (nC)
V
, Gate-to-Source Voltage (V)
G
GS
Fig. 3 - Typical Transfer Characteristics
Fig. 6 - Typical Gate Charge vs.
Gate to Source Voltage
Document Number: 94547
Revision: 11-May-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
FA38SA50LCP
Vishay Semiconductors
Power MOSFET, 38 A
1000
100
Current regulator
Same type as D.U.T.
50 KΩ
.2 µF
.3 µF
12 V
°
T = 150 C
J
10
1
+
-
VDS
D.U.T.
°
T = 25 C
J
VGS
3 mA
V
= 0 V
GS
1.4
0.1
IG
0.2
0.4
0.6
0.8
1.0
1.2
1.6
ID
Current sampling resistors
V
,Source-to-Drain Voltage (V)
SD
Fig. 7 - Typical Source Drain Diode Forward Voltage
Fig. 10 - Gate Charge Test Circuit
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
RD
VDS
100
10
1
10us
VGS
D.U.T.
RG
+
-
VDD
100us
1ms
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
°
= 25 C
T
J
C
°
= 150 C
T
10ms
1000
Single Pulse
10
1
100
10000
V
, Drain-to-Source Voltage (V)
DS
Fig. 8 - Maximum Safe Operating Area
Fig. 11 - Switching Time Test Circuit
V
DS
Q
G
90%
10V
Q
Q
GD
GS
V
G
0%
GS
t
t
r
t
t
f
d(on)
d(off)
Charge
Fig. 9 - Basic Gate Charge Waveform
Fig. 12 - Switching Time Waveforms
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For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94547
Revision: 11-May-10
FA38SA50LCP
Vishay Semiconductors
Power MOSFET, 38 A
1
0.50
0.20
0.1
0.10
0.05
P
2
DM
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
0.01
t
1
t
2
Notes:
1. Duty factor D =t / t
1
2. Peak T =P
x Z
+ T
C
J
DM
thJC
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig. 13 - Maximum Effective Transient Thermal Impedance, Junction to Case
V
(BR)DSS
15 V
t
p
Driver
L
VDS
D.U.T
RG
+
-
VDD
IAS
A
20 V
I
AS
0.01 Ω
tp
Fig. 14 - Unclamped Inductive Test Circuit
Fig. 15 - Unclamped Inductive Waveforms
1200
1000
800
I
D
TOP
17A
24A
BOTTOM 38A
600
400
200
0
25
50
75
100
125
150
°
Starting T , Junction Temperature ( C)
J
Fig. 16 - Maximum Avalanche Energy vs. Drain Current
Document Number: 94547
Revision: 11-May-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
5
FA38SA50LCP
Vishay Semiconductors
Power MOSFET, 38 A
+
Circuit layout considerations
D.U.T.
•
•
•
Low stray inductance
Ground plane
Low leakage inductance
current transformer
3
-
+
2
-
4
-
+
1
RG
•
•
•
•
dV/dt controlled by RG
Driver same type as D.U.T.
+
-
VDD
ISD controlled by duty factor "D"
D.U.T. - Device under test
Fig. 17 - Peak Diode Recovery dV/dt Test Circuit
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
I
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig. 18 - For N-Channel Power MOSFETs
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For technical questions within your region, please contact one of the following:
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Document Number: 94547
Revision: 11-May-10
FA38SA50LCP
Vishay Semiconductors
Power MOSFET, 38 A
ORDERING INFORMATION TABLE
Device code
F
A
38
S
A
50
LC
P
1
2
3
4
5
6
7
8
1
2
3
4
5
6
7
8
-
-
-
-
-
-
-
-
Power MOSFET
Generation 3, MOSFET silicon, DBC construction
Current rating (38 = 38 A)
Single switch (see Circuit Configuration table)
SOT-227
Voltage rating (50 = 500 V)
Low charge
P = Lead (Pb)-free
CIRCUIT CONFIGURATION
CIRCUIT
CONFIGURATION CODE
CIRCUIT
CIRCUIT DRAWING
Lead assignment
D (3)
S
D
4
1
3
2
Single switch no diode
S
G (2)
G
S
S (1-4)
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95036
www.vishay.com/doc?95037
Packaging information
Document Number: 94547
Revision: 11-May-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
7
Outline Dimensions
Vishay Semiconductors
SOT-227
DIMENSIONS in millimeters (inches)
38.30 (1.508)
37.80 (1.488)
Chamfer
2.00 (0.079) x 45°
4 x M4 nuts
Ø 4.40 (0.173)
Ø 4.20 (0.165)
-A-
4
1
3
2
25.70 (1.012)
25.20 (0.992)
6.25 (0.246)
12.50 (0.492)
7.50 (0.295)
-B-
R full
15.00 (0.590)
30.20 (1.189)
29.80 (1.173)
M
M
M
B
0.25 (0.010)
C A
8.10 (0.319)
4 x
7.70 (0.303)
2.10 (0.082)
1.90 (0.075)
2.10 (0.082)
1.90 (0.075)
12.30 (0.484)
11.80 (0.464)
-C-
0.12 (0.005)
Notes
•
•
Dimensioning and tolerancing per ANSI Y14.5M-1982
Controlling dimension: millimeter
Document Number: 95036
Revision: 28-Aug-07
For technical questions, contact: indmodules@vishay.com
www.vishay.com
1
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to
obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 11-Mar-11
www.vishay.com
1
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