FEP30XP-E3 [VISHAY]
Dual Common Cathode Ultrafast Rectifier;型号: | FEP30XP-E3 |
厂家: | VISHAY |
描述: | Dual Common Cathode Ultrafast Rectifier |
文件: | 总5页 (文件大小:93K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
FEP30xP-E3
Vishay General Semiconductor
www.vishay.com
Dual Common Cathode Ultrafast Rectifier
FEATURES
• Power pack
• Glass passivated pellet chip junction
• Ultrafast recovery time
• Low switching losses, high efficiency
• Low thermal resistance
• High forward surge capability
• Solder dip 260 °C, 40 s
3
2
1
TO-247AD (TO-3P)
PIN 2
PIN 1
PIN 3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
CASE
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode
power supplies, inverters, freewheeling diodes, DC/DC
converters, and other power switching application.
PRIMARY CHARACTERISTICS
IF(AV)
30 A
50 V, 100 V, 150 V, 200 V, 300 V,
400 V, 500 V, 600 V
VRRM
MECHANICAL DATA
Case: TO-247AD (TO-3P)
Molding compound meets UL 94 V-0 flammability rating
IFSM
trr
300 A
35 ns, 50 ns
VF at IF = 15 A
TJ max.
0.95 V, 1.3 V, 1.5 V
150 °C
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix meets JESD 201 class 1A whisker test
Package
TO-247AD (TO-3P)
Dual common cathode
Diode variations
Polarity: As marked
Mounting Torque: 10 in-lbs max.
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
FEP
FEP
FEP
FEP
FEP
FEP
FEP
FEP
PARAMETER
SYMBOL
UNIT
30AP 30BP 30CP 30DP 30FP 30GP 30HP 30JP
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VRRM
VRMS
VDC
50
35
50
100
70
150
105
150
200
140
200
300
210
300
400
280
400
500
350
500
600
420
600
V
V
V
Maximum DC blocking voltage
100
Maximum average forward rectified current
at TC = 100 °C
IF(AV)
30
A
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load per diode
IFSM
300
A
Operating storage and temperature range
TJ, TSTG
-55 to +150
°C/W
Revision: 23-Feb-16
Document Number: 88597
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
FEP30xP-E3
Vishay General Semiconductor
www.vishay.com
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
TEST
CONDITIONS
FEP
FEP
FEP
FEP
FEP
FEP
FEP
FEP
PARAMETER
SYMBOL
UNIT
30AP 30BP 30CP 30DP 30FP 30GP 30HP 30JP
Maximum instantaneous
forward voltage per diode
15.0 A
VF
0.95
35
1.3
1.5
V
Maximum DC reverse current at
rated DC blocking voltage
per diode
TC = 25 °C
10
IR
μA
TC = 100 °C
500
IF = 0.5 A,
Maximum reverse recovery time
per diode
I
R = 1.0 A,
trr
50
ns
Irr = 0.25 A
Typical junction capacitance
per diode
4.0 V, 1 MHz
CJ
175
145
pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
FEP
FEP
FEP
FEP
FEP
FEP
FEP
FEP
PARAMETER
SYMBOL
UNIT
30AP 30BP 30CP 30DP 30FP 30GP 30HP 30JP
(1)
Typical thermal resistance per diode
RJC
1.0
°C/W
Note
(1)
Thermal resistance from junction to case per diode mounted on heatsink
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
TO-247AD
FEP30JP-E3/45
6.15
30
30/tube
Tube
Revision: 23-Feb-16
Document Number: 88597
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
FEP30xP-E3
Vishay General Semiconductor
www.vishay.com
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
36
30
24
12
6
1000
100
10
50 V to 200 V
300 V to 600 V
Resistive or Inductive Load
TJ = 125 °C
TJ = 100 °C
1
0.1
0.01
TJ = 25 °C
0
10
20
30
40
50
60
70
80
90 100
0
50
100
150
Case Temperature (°C)
Percent of Rated Peak Reverse Voltage (%)
Fig. 1 - Forward Current Derating Curve
Fig. 4 - Typical Reverse Leakage Characteristics Per Diode
300
250
200
150
100
50
1000
TC = 100 °C
8.3 ms Single Half Sine-Wave
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
100
50 V to 400 V
500 V to 600 V
0
10
1
10
100
0.1
1
10
100
Number of Cycles at 60 Hz
Reverse Voltage (V)
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
100
Pulse Width = 300 μs
1 % Duty Cycle
TJ = 125 °C
10
TJ = 25 °C
1
50 V to 200 V
300 V to 400 V
500 V to 600 V
0.1
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Revision: 23-Feb-16
Document Number: 88597
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
FEP30xP-E3
Vishay General Semiconductor
www.vishay.com
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-247AD (TO-3P)
0.245 (6.2)
0.225 (5.7)
0.645 (16.4)
0.625 (15.9)
0.203 (5.16)
0.193 (4.90)
0.078 (1.98) REF.
10
0.323 (8.2)
0.313 (7.9)
30°
0.170
(4.3)
10° TYP.
0.840 (21.3)
0.820 (20.8)
Both Sides
0.142 (3.6)
0.138 (3.5)
1
2
3
1° REF.
Both Sides
0.086 (2.18)
0.076 (1.93)
0.118 (3.0)
0.108 (2.7)
0.127 (3.22)
0.117 (2.97)
0.160 (4.1)
0.140 (3.5)
0.795 (20.2)
0.775 (19.6)
0.030 (0.76)
0.020 (0.51)
0.225 (5.7)
0.205 (5.2)
0.048 (1.22)
0.044 (1.12)
PIN 2
CASE
PIN 1
PIN 3
Revision: 23-Feb-16
Document Number: 88597
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
相关型号:
FEP6ATHE3/45
DIODE 3 A, 50 V, SILICON, RECTIFIER DIODE, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode
VISHAY
FEP6BT-HE3/45
DIODE 3 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode
VISHAY
FEP6CTHE3/45
DIODE 3 A, 150 V, SILICON, RECTIFIER DIODE, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode
VISHAY
FEP6DT-HE3/45
DIODE 3 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode
VISHAY
©2020 ICPDF网 联系我们和版权申明