G2B/4 [VISHAY]

Rectifier Diode, 1 Phase, 1 Element, 2A, 100V V(RRM), Silicon, DO-204AP, HERMETIC SEALED, GLASS PACKAGE-2;


型号：	G2B/4
厂家：	VISHAY
描述：	Rectifier Diode, 1 Phase, 1 Element, 2A, 100V V(RRM), Silicon, DO-204AP, HERMETIC SEALED, GLASS PACKAGE-2
文件：	总2页 (文件大小：22K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

G2A thru G2M

Vishay Semiconductors

formerly General Semiconductor

Glass Passivated Junction Rectifiers

Reverse Voltage

50 to 1000V

Forward Current 2.0A

Features

DO-204AP

• High temperature metallurgically bonded

constructed rectifiers

0.034 (0.86)

• Cavity-free glass passivated junction

• Hermetically sealed package

• 2.0 ampere operation at T_A=75°C with no thermal runaway

• Typical I_Rless than 0.1µA

0.028 (0.71)

DIA.

1.0 (25.4)

MIN.

• Capable of meeting environmental standards of

MIL-S-19500

• High temperature soldering guaranteed: 350°C/10 seconds,

0.375" (9.5mm) lead length, 5 lbs. (2.3kg) tension

Dimensions in inches

and (millimeters)

0.240 (6.1)

MAX.

Mechanical Data

Case: JEDEC DO-204AP Solid glass body

Terminals: Solder plated axial leads, solderable per

MIL-STD-750, Method 2026

0.150 (3.8)

0.100 (2.5)

DIA.

Polarity: Color band denotes cathode end

1.0 (25.4)

MIN.

Mounting Position: Any

Weight: 0.02 oz., 0.56 g

Packaging Codes – Options:

1 – 4K per Bulk box, 40k/ carton

4 – 4.5K per 13” reel (52.4mm Tape), 18K/carton

23 – 3K per Ammo mag. (52.4mm Tape), 27K/carton

*Brazed-lead assembly is covered by Patent No. 3,930,306

Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.

Parameter

Symbol G2A G2B G2D G2G G2J G2K G2M Unit

Maximum repetitive peak reverse voltage

Maximum RMS voltage

V_RRM

V_RMS

V_DC

100

200

140

200

400

280

400

600

420

600

800 1000

560 700

800 1000

Maximum DC blocking voltage

Maximum average forward rectified current

0.375” (9.5mm) lead length at T_A= 75°C

I_F(AV)

I_FSM

2.0

Peak forward surge current 8.3ms single half sine-wave

superimposed on rated load (JEDEC Method)

Maximum full load reverse current, full cycle average

0.375” (9.5mm) lead length at T_A= 100°C

I_R(AV)

100

µA

Typical thermal resistance⁽¹⁾

R_θJA

°C/W

Operating junction and storage temperature range

T_J, T_STG

–65 to +175

°C

Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.

Maximum instantaneous forward voltage at 2.0A

V_F

1.2

1.1

Maximum DC reverse current

at rated DC blocking voltage

T_A= 25°C

T_A= 150°C

1.0

100

I_R

µA

Typical reverse recovery time at

I_F= 0.5A, I_R= 1.0A, I_rr= 0.25A

t_rr

3.5

µs

Typical junction capacitance at 4.0V, 1MHz

C_J

Note: (1) Thermal resistance from junction to ambient at 0.375” (9.5mm) lead length, P.C.B. mounted

Document Number 88602

26-Feb-02

www.vishay.com

G2A thru G2M

Vishay Semiconductors

formerly General Semiconductor

Ratings and

Characteristic Curves (T_A= 25°C unless otherwise noted)

Fig. 1 – Maximum Forward Current

Fig. 2 – Maximum Non-Repetitive Peak

Forward Surge Current

Derating Curve

2.0

T_J= T_Jmax.

8.3ms Single Half Sine-Wave

(JEDEC Method)

60H_ZResistive or

Inductive Load

1.5

1.0

Capacitance Load

Inductive Load

Ipk/I_AV= 5.0

0.5

0.375 (9.5mm)

Lead Length

100

125

150

175

100

Ambient Temperature (°C)

Number of Cycles at 60 H

Fig. 3 – Typical Instantaneous

Forward Characteristics

Fig. 4 – Typical Reverse Characteristics

T_J= 125°C

T_J= 150°C

T_J= 25°C

T_J= 75°C

T_J= 25°C

0.1

Pulse Width = 300µs

1% Duty Cycle

0.01

100

0.2

0.4

0.6

0.8

1.0

1.2

1.4

Instantaneous Forward Voltage (V)

Percent of Rated Peak Reverse Voltage (%)

Fig. 5 – Typical Junction Capacitance

T_J= 25°C

f = 1.0MH_Z

V_sig= 50mVp — p

100

Reverse Voltage (V)

www.vishay.com

Document Number 88602

26-Feb-02

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