G2B/54 [VISHAY]

Rectifier Diode, 1 Element, 2A, 100V V(RRM),;


型号：	G2B/54
厂家：	VISHAY
描述：	Rectifier Diode, 1 Element, 2A, 100V V(RRM),
文件：	总6页 (文件大小：318K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

G2A / B / D / G / J / K / M

VISHAY

Vishay Semiconductors

Standard Sinterglass Diode

Features

• High temperature metallurgically bonded con-

structed rectifiers

• Cavity-free glass passivated junction

• Hermetically sealed package

• 2.0 ampere operation at T_amb= 75 °C with no ther-

mal runaway

Mechanical Data

17031

Case: DO-204AP Sintered glass case

Terminals: Solder plated axial leads, solderable per Mounting Position: Any

MIL-STD-750, Method 2026

Weight: approx. 560 mg

Polarity: Color band denotes cathode end

Parts Table

Part

Type differentiation

= 50 V

Package

G2A

G2B

G2D

G2G

G2J

DO-204AP(G-1)

RRM

= 100 V

= 200 V

= 400 V

= 600 V

= 800 V

= 1000 V

DO-204AP(G-1)

G2K

G2M

Absolute Maximum Ratings

= 25 °C, unless otherwise specified

Parameter

amb

Test condition

Part

G2A

Symbol

Value

Unit

Reverse voltage = Repetitive

peak reverse voltage

see electrical characteristics

= V

RRM

G2B

G2D

G2G

G2J

= V

100

200

400

600

800

1000

2.0

RRM

G2K

G2M

Maximum average forward

rectified current

0.375 " (9.5 mm) lead length at

F(AV)

= 75 °C

amb

Document Number 86085

Rev. 1.3, 11-Aug-04

www.vishay.com

G2A / B / D / G / J / K / M

Vishay Semiconductors

VISHAY

Parameter

Test condition

Part

Symbol

Value

Unit

Peak forward surge current

8.3 ms single half sine-wave

superimposed on rated load

(JEDEC Method)

FSM

Maximum full load reverse

current

full cycle average 0.375 "

(9.5 mm) lead length at

100

µA

R(AV)

= 100 °C

amb

Operating junction and storage

temperature range

T , T

- 55 to + 175

°C

STG

Maximum Thermal Resistance

= 25 °C, unless otherwise specified

amb

Parameter

Test condition

Symbol

Value

Unit

K/W

Typical thermal resistance

θJA

Thermal resistance from junction to ambient at 0.375 " (9.5 mm) lead length, P.C.B. mounted

Electrical Characteristics

= 25 °C, unless otherwise specified

amb

Parameter

Test condition

Part

G2A

Symbol

Min

Typ.

Max

Unit

Maximum instantaneous

= 2 A

1.2

forward voltage

G2B

G2D

G2G

G2J

1.2

1.1

1.0

100

G2K

G2M

Maximum reverse current

= V

, T

= 25 °C

µA

µs

RRM amb

= V

, T

= 150 °C

RRM amb

Typical reverse recovery time

Typical junction capacitance

I = 0.5 A, I = 1.0 A, I = 0.25 A

1.5

= 4.0 V, f = 1 MHz

Typical Characteristics (T_amb= 25 °C unless otherwise specified)

2.0

1.5

1.0

T_J= T_Jmax.

8.3ms Single Half Sine-W ave

(JEDEC Method)

60H_ZResistive or

Inductive Load

Capacitance Load

Inductive Load

Ipk/I_AV= 5.0

0.5

0.375 (9.5mm)

Lead Length

100

125

150

175

100

Number of Cycles at 60 H

gg2a_01

gg2a_02

Ambient T emperature (°C)

Figure 1. Forward Current Derating Curve

Figure 2. Maximum Non-Repetitive Peak Forward Surge Current

www.vishay.com

Document Number 86085

Rev. 1.3, 11-Aug-04

G2A / B / D / G / J / K / M

VISHAY

Vishay Semiconductors

T_J= 150°C

T_J= 25°C

0.1

Pulse Width = 300µs

1% Duty Cycle

0.01

0.2

0.4

0.6

0.8

1.0

1.2

1.4

gg2a_03

Instantaneous Forward Voltage (V)

Figure 3. Typical Instantaneous Forward Characteristics

T_J= 125°C

T_J= 75°C

0.1

T_J= 25°C

0.01

100

gg2a_04

Percent of Rated Peak Reverse Voltage (%)

Figure 4. Typical Reverse Characteristics

T_J= 25°C

f = 1.0MH_Z

V_sig= 50mVp-p

100

gg2a_05

Reverse Voltage (V)

Figure 5. Typical Junction Capacitance

Document Number 86085

Rev. 1.3, 11-Aug-04

www.vishay.com

G2A / B / D / G / J / K / M

Vishay Semiconductors

VISHAY

Package Dimensions in mm (Inches)

0.86 (0.034)

0.71 (0.028)

DIA.

25.4 (1.0)

MIN.

6.1 (0.240)

MAX.

3.8 (0.150)

2.5 (0.100)

DIA.

25.4 (1.0)

MIN.

17030

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Document Number 86085

Rev. 1.3, 11-Aug-04

G2A / B / D / G / J / K / M

VISHAY

Vishay Semiconductors

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and

operatingsystems with respect to their impact on the health and safety of our employees and the public, as

well as their impact on the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are

known as ozone depleting substances (ODSs).

The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs

and forbid their use within the next ten years. Various national and international initiatives are pressing for an

earlier ban on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the

use of ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments

respectively

2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental

Protection Agency (EPA) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting

substances and do not contain such substances.

We reserve the right to make changes to improve technical design

and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each

customer application by the customer. Should the buyer use Vishay Semiconductors products for any

unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all

claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal

damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423

Document Number 86085

Rev. 1.3, 11-Aug-04

www.vishay.com

Legal Disclaimer Notice

Vishay

Disclaimer

All product specifications and data are subject to change without notice.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf

(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein

or in any other disclosure relating to any product.

Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any

information provided herein to the maximum extent permitted by law. The product specifications do not expand or

otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed

therein, which apply to these products.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this

document or by any conduct of Vishay.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless

otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such

applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting

from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding

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Product names and markings noted herein may be trademarks of their respective owners.

Document Number: 91000

Revision: 18-Jul-08

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