G2SB80-E3/72 [VISHAY]

Bridge Rectifier Diode, 1 Phase, 1.5A, 800V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, CASE GBL, 4 PIN;
G2SB80-E3/72
型号: G2SB80-E3/72
厂家: VISHAY    VISHAY
描述:

Bridge Rectifier Diode, 1 Phase, 1.5A, 800V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, CASE GBL, 4 PIN

二极管
文件: 总4页 (文件大小:89K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
G2SB20, G2SB60 & G2SB80  
Vishay General Semiconductor  
Glass Passivated Single-Phase Bridge Rectifier  
FEATURES  
• UL Recognition file number E54214  
• Ideal for printed circuit boards  
• High surge current capability  
• Typical I less than 0.1 µA  
• High case dielectric strength  
• Solder Dip 260 °C, 40 seconds  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
R
~
~
~
~
Case Type GBL  
TYPICAL APPLICATIONS  
General purpose use in ac-to-dc bridge full wave  
rectification for Monitor, TV, Printer, SMPS, Adapter,  
Audio equipment, and Home Appliances application.  
MAJOR RATINGS AND CHARACTERISTICS  
IF(AV)  
VRRM  
IFSM  
IR  
1.5 A  
200 V, 600 V, 800 V  
80 A  
MECHANICAL DATA  
Case: GBL  
Epoxy meets UL 94V-0 flammability rating  
5 µA  
VF  
1.0 V  
Terminals: Matte tin plated leads, solderable per  
J-STD-002B and JESD22-B102D  
Tj max.  
150 °C  
E3 suffix for commercial grade  
Polarity: As marked on body  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
SYMBOL  
G2SB20  
G2SB60  
600  
G2SB80  
800  
UNIT  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
200  
V
V
V
VRMS  
140  
420  
560  
Maximum DC blocking voltage  
VDC  
200  
600  
800  
Maximum average forward rectified output current  
at TA = 25 °C  
IF(AV)  
1.5  
80  
A
Peak forward surge current single sine-wave  
superimposed on rated load  
IFSM  
A
Rating for fusing (t < 8.3 ms)  
I2t  
27  
A2sec  
°C  
Operating junction and storage temperature range  
TJ, TSTG  
- 55 to + 150  
ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
TEST CONDITIONS SYMBOL  
G2SB20  
G2SB60  
G2SB80  
UNIT  
Maximum instantaneous forward  
voltage drop per diode  
at 0.75 A  
VF  
IR  
1.00  
V
Maximum DC reverse current at  
rated DC blocking voltage per diode  
T
A = 25 °C  
5.0  
300  
µA  
T
A = 125 °C  
Document Number 88603  
10-Oct-06  
www.vishay.com  
1
G2SB20, G2SB60 & G2SB80  
Vishay General Semiconductor  
THERMAL CHARACTERISTICS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
SYMBOL  
G2SB20  
G2SB60  
G2SB80  
UNIT  
RθJA  
RθJC  
40  
12  
Typical thermal resistance  
°C/W  
Note:  
(1) Unit mounted on P.C.B. with 0.5 x 0.5" (12 x 12 mm) copper pads and 0.375" (9.5 mm) lead length  
ORDERING INFORMATION  
PREFERRED P/N  
G2SB60-E3/45  
G2SB60-E3/51  
UNIT WEIGHT (g)  
PREFERRED PACKAGE CODE  
BASE QUANTITY  
DELIVERY MODE  
2.045  
45  
51  
20  
Tube  
2.045  
400  
Anti-static PVC Tray  
RATINGS AND CHARACTERISTICS CURVES  
(T = 25 °C unless otherwise noted)  
A
2.0  
100  
10  
P. C. B. M o unting, T  
A
1.5  
1.0  
0.5  
0
1
0.1  
0.01  
0
25  
50  
75  
100  
125  
150  
0.6  
1.0  
1.4  
1.8  
2.2  
2.6  
3.0  
3.4  
Temperature (°C)  
Instantaneous Forward Voltage (V)  
Figure 1. Derating Curve Output Rectified Current  
Figure 3. Typical Forward Characteristics Per Diode  
100  
100  
TA = 125 °C  
80  
10  
60  
40  
1
0.1  
20  
0
TA = 25 °C  
40  
1.0 Cycle  
0.01  
0
20  
60  
80  
100  
1
100  
Number of Cycles at 60 Hz  
Percent of Rated Peak Reverse Voltage (%)  
Figure 2. Maximum Non-Repetitive Peak Forward Surge  
Current Per Diode  
Figure 4. Typical Reverse Characteristics Per Diode  
www.vishay.com  
2
Document Number 88603  
10-Oct-06  
G2SB20, G2SB60 & G2SB80  
Vishay General Semiconductor  
100  
100  
10  
10  
1
0.1  
1
0.1  
0.01  
0.01  
0.1  
1
10  
100  
1
10  
100  
Reverse Voltage (V)  
t - Heating Time (s)  
Figure 5. Typical Junction Capacitance Per Diode  
Figure 6. Typical Transient Thermal Impedance  
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)  
Case Type GBL  
0.825 (20.9)  
0.125 (3.17)  
x 45 degrees  
Chamfer  
0.815 (20.7)  
0.421 (10.7)  
0.411 (10.4)  
0.080 (2.03)  
0.060 (1.50)  
0.098 (2.5)  
0.075 (1.9)  
0.718 (18.2)  
0.682 (17.3)  
0.095 (2.41)  
0.080 (2.03)  
0.098 (2.5)  
0.075 (1.9)  
0.043 (1.10)  
0.035 (0.90)  
Lead Depth  
0.022 (0.56)  
0.018 (0.46)  
(5.3)  
(4.8)  
0.210  
0.190  
0.040 (1.02)  
0.030 (0.76)  
0.140 (3.56)  
0.128 (3.25)  
0.026 (0.66)  
0.020 (0.51)  
Polarity shown on front side of case, positive lead beveled. corner  
Document Number 88603  
10-Oct-06  
www.vishay.com  
3
Legal Disclaimer Notice  
Vishay  
Notice  
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,  
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.  
Information contained herein is intended to provide a product description only. No license, express or implied, by  
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's  
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express  
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness  
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.  
Customers using or selling these products for use in such applications do so at their own risk and agree to fully  
indemnify Vishay for any damages resulting from such improper use or sale.  
Document Number: 91000  
Revision: 08-Apr-05  
www.vishay.com  
1

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