G2SB80-M3/45 [VISHAY]

DIODE BRIDGE RECTIFIER DIODE, Bridge Rectifier Diode;


型号：	G2SB80-M3/45
厂家：	VISHAY
描述：	DIODE BRIDGE RECTIFIER DIODE, Bridge Rectifier Diode 二极管
文件：	总4页 (文件大小：85K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

G2SB20, G2SB60, G2SB80

Vishay General Semiconductor

Glass Passivated Single-Phase Bridge Rectifier

FEATURES

• UL recognition file number E54214

• Ideal for printed circuit boards

• High surge current capability

• Typical I less than 0.1 µA

• High case dielectric strength

• Solder dip 275 °C max. 10 s, per JESD 22-B106

• Compliant to RoHS Directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

Case Type GBL

• Halogen-free according to IEC 61249-2-21

definition

TYPICAL APPLICATIONS

General purpose use in AC/DC bridge full wave

rectification for monitor, TV, printer, SMPS, adapter,

audio equipment, and home appliances application.

PRIMARY CHARACTERISTICS

I_F(AV)

1.5 A

V_RRM

I_FSM

I_R

200 V, 600 V, 800 V

80 A

5 µA

MECHANICAL DATA

Case: GBL

Molding compound meets UL 94 V-0 flammability

rating

V_F

1.0 V

150 °C

T_Jmax.

Base P/N-M3 - halogen-free and RoHS compliant,

commercial grade

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 suffix meets JESD 201 class 1A whisker test

Polarity: As marked on body

MAXIMUM RATINGS (T = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V_RRM

G2SB20

200

G2SB60

600

G2SB80

800

UNIT

Maximum repetitive peak reverse voltage

Maximum RMS voltage

V_RMS

140

420

560

Maximum DC blocking voltage

V_DC

200

600

800

Maximum average forward rectified output current

at T_A= 25 °C

I_F(AV)

1.5

Peak forward surge current single sine-wave superimposed

on rated load

I_FSM

Rating for fusing (t < 8.3 ms)

I²t

A²s

°C

Operating junction and storage temperature range

T_J, T_STG

- 55 to + 150

ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted)

PARAMETER

TEST CONDITIONS SYMBOL

G2SB20

G2SB60

G2SB80

UNIT

Maximum instantaneous forward

voltage drop per diode

0.75 A

V_F

I_R

1.00

Maximum DC reverse current at rated T_A= 25 °C

DC blocking voltage per diode

5.0

300

µA

T_A= 125 °C

Document Number: 89302

Revision: 16-Nov-11

For technical questions within your region, please contact one of the following:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

www.vishay.com

G2SB20, G2SB60, G2SB80

Vishay General Semiconductor

THERMAL CHARACTERISTICS (T = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

G2SB20

G2SB60

G2SB80

UNIT

R_θJA

R_θJC

Typical thermal resistance

°C/W

Note

(1)

Unit mounted on PCB with 0.5" x 0.5" (12 mm x 12 mm) copper pads and 0.375" (9.5 mm) lead length

ORDERING INFORMATION (Example)

PREFERRED P/N

G2SB60-M3/45

G2SB60-M3/51

UNIT WEIGHT (g)

PREFERRED PACKAGE CODE

BASE QUANTITY

DELIVERY MODE

2.045

Tube

2.045

400

Anti-static PVC tray

RATINGS AND CHARACTERISTICS CURVES

(T = 25 °C unless otherwise noted)

2.0

100

P.C.B. Mounting, T_A

1.5

1.0

0.5

0.1

0.01

100

125

150

0.6

1.0

1.4

1.8

2.2

2.6

3.0

3.4

Temperature (°C)

Instantaneous Forward Voltage (V)

Figure 1. Derating Curve Output Rectified Current

Figure 3. Typical Forward Characteristics Per Diode

100

T_A= 125 °C

0.1

T_A= 25 °C

1.0 Cycle

0.01

100

Number of Cycles at 60 Hz

100

Percent of Rated Peak Reverse Voltage (%)

Figure 4. Typical Reverse Characteristics Per Diode

Figure 2. Maximum Non-Repetitive Peak Forward Surge

Current Per Diode

www.vishay.com

For technical questions within your region, please contact one of the following:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

Document Number: 89302

Revision: 16-Nov-11

G2SB20, G2SB60, G2SB80

Vishay General Semiconductor

100

0.1

0.01

0.1

100

0.1

100

t - Heating Time (s)

Reverse Voltage (V)

Figure 5. Typical Junction Capacitance Per Diode

Figure 6. Typical Transient Thermal Impedance

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

Case Type GBL

0.825 (20.9)

0.815 (20.7)

0.125 (3.17) x 45°

Chamfer

0.421 (10.7)

0.411 (10.4)

0.080 (2.03)

0.060 (1.50)

0.098 (2.5)

0.075 (1.9)

0.718 (18.2)

0.095 (2.41)

0.080 (2.03)

0.098 (2.5)

0.075 (1.9)

0.050 (1.27)

0.040 (1.02)

0.682 (17.3)

Lead Depth

0.022 (0.56)

0.018 (0.46)

0.210 (5.3)

0.190 (4.8)

0.040 (1.02)

0.030 (0.76)

0.022 (0.56)

0.140 (3.56)

0.128 (3.25)

0.018 (0.46)

Polarity shown on front side of case, positive lead beveled corner

Document Number: 89302

Revision: 16-Nov-11

For technical questions within your region, please contact one of the following:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

www.vishay.com

Legal Disclaimer Notice

www.vishay.com

Vishay

Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE

RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

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product with the properties described in the product specification is suitable for use in a particular application. Parameters

provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All

operating parameters, including typical parameters, must be validated for each customer application by the customer’s

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including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining

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Material Category Policy

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the

definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council

of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment

(EEE) - recast, unless otherwise specified as non-compliant.

Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that

all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.

Revision: 12-Mar-12

Document Number: 91000

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