G3SBA60/22 [VISHAY]
Bridge Rectifier Diode, 1 Phase, 2.3A, 600V V(RRM), Silicon, PLASTIC, CASE GBU, 4 PIN;
| 型号： | G3SBA60/22 |
| 厂家： | 
VISHAY |
| 描述： | Bridge Rectifier Diode, 1 Phase, 2.3A, 600V V(RRM), Silicon, PLASTIC, CASE GBU, 4 PIN 局域网 二极管 |
| 文件： | 总2页 (文件大小：25K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
G3SBA20 thru G3SBA80
Vishay Semiconductors
formerly General Semiconductor
Glass Passivated Single-Phase
Bridge Rectifier
Reverse Voltage 200 and 800 V
Forward Current 4.0 A
Case Type GBU
Features
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
• High case dielectric strength of 1500 VRMS
• Ideal for printed circuit boards
• Glass passivated chip junction
• High surge current capability
0.140 (3.56)
0.130 (3.30)
0.880 (22.3)
0.860 (21.8)
0.020 R (TYP.)
o
0.125 (3.2) x 45
CHAMFER
o
9
TYP.
0.160 (4.1)
0.140 (3.5)
0.310 (7.9)
0.290 (7.4)
0.740 (18.8)
0.720 (18.3)
0.075
0.085 (2.16)
0.065 (1.65)
(2.03)
(1.52)
0.080
0.060
(1.9)
R.
Mechanical Data
Case: Molded plastic body over passivated
o
5
TYP.
junctions
0.085 (2.16)
0.075 (1.90)
0.710 (18.0)
0.690 (17.5)
Terminals: Plated leads solderable per
MIL-STD-750, Method 2026
0.100 (2.54)
0.085 (2.16)
0.050 (1.27)
0.040 (1.02)
High temperature soldering guaranteed:
260°C/10 seconds, 0.375" (9.5mm) lead length,
5lbs. (2.3kg) tension
Mounting Position: Any(3)
Mounting Torque: 5 in-lbs max.
Weight: 0.15 oz., 4.0 g
0.022 (0.56)
0.018 (0.46)
(4.83)
(5.33)
0.080 (2.03)
0.065 (1.65)
0.190
0.210
Polarity shown on front side of case, positive lead by beveled corner
Lead forming option with 10mm-7.5mm spacing is available.
Dimensions in inches and (millimeters)
Packaging codes/options:
1/400 ea. per Bulk Tray Stack
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Symbol
VRRM
VRMS
VDC
G3SBA20 G3SBA60 G3SBA80
Unit
Maximum repetitive peak reverse voltage
Maximum RMS voltage
200
140
200
600
420
600
800
560
800
V
V
Maximum DC blocking voltage
V
Maximum average forward
rectified output current at
TC = 100OC(1)
TA = 25OC (2)
4.0
2.3
IF(AV)
A
Peak forward surge current single sine-wave
superimposed on rated load (JEDEC Method)
IFSM
I2t
80
27
A
Rating for fusing (t < 8.3ms)
A2sec
°C/W
°C
RθJA
RθJC
26(1)
Typical thermal resistance per leg
Operating junction storage and temperature range
5.0(2)
TJ, TSTG
–55 to +150
Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Symbol
G3SBA20 G3SBA60 G3SBA80
Unit
Maximum instantaneous forward voltage
drop per leg at 2.0 A
VF
1.00
V
Maximum DC reverse current at rated
DC blocking voltage per leg
TA = 25°C
TA = 125°C
5.0
400
IR
µA
Notes: (1) Unit case mounted on Al plate heatsink
(2) Units mounted on P.C.B. with 0.5 x 0.5” (12 x 12mm) copper pads and 0.375” (9.5mm) lead length
(3) Recommended mounting position is to bolt down on heatsink with silicone thermal compound for maximum heat transfer with #6 screw
Document Number 88606
27-May-03
www.vishay.com
1
G3SBA20 thru G3SBA80
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
Fig. 1 - Derating Cuve Output
Fig. 2 - Maximum Non-Repetitive Peak Forward
Surge Current Per Leg
Rectified Current
100
4
Heatsink Mounting, T
C
80
60
40
3
2
P.C.B. Mounting, T
A
1
0
20
0
1.0 Cycle
0
25
50
75
100
125
150
1
100
Number of Cycles at 60 H
Temperature (°C)
z
Fig. 3 - Typical Forward Characteristics
Per Leg
Fig. 4 - Typical Reverse Characteristics
Per Leg
100
10
1
100
10
1
T
= 125°C
A
0.1
0.1
T
= 25°C
A
0.01
0.01
0.4
0.8
1.2
1.6
2
2.4
0
20
40
60
80
100
Instantaneous Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Fig. 5 - Typical Junction Capacitance
Per Leg
Fig. 6 - Typical Transient Thermal
Impedance
100
100
10
10
1
1
0.1
0.1
1
10
100
0.01
0.1
1
10
100
Reverse Voltage (V)
t, Heating Time (sec.)
www.vishay.com
2
Document Number 88606
27-May-03
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