GA75TS120UPBF [VISHAY]
'Half-Bridge' IGBT INT-A-PAK (Ultrafast Speed IGBT), 75 A; “半桥” IGBT INT -A- PAK （超快速度IGBT ） ， 75A的
| 型号： | GA75TS120UPBF |
| 厂家： | 
VISHAY |
| 描述： | 'Half-Bridge' IGBT INT-A-PAK (Ultrafast Speed IGBT), 75 A |
| 文件： | 总9页 (文件大小：247K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GA75TS120UPbF
Vishay High Power Products
"Half-Bridge" IGBT INT-A-PAK
(Ultrafast Speed IGBT), 75 A
FEATURES
• Generation 4 IGBT technology
• Ultrafast: Optimized for high speed 8 kHz to
40 kHz in hard switching, > 200 kHz in resonant
mode
• Very low conduction and switching losses
• HEXFRED® antiparallel diodes with ultrasoft recovery
• Industry standard package
• UL approved file E78996
INT-A-PAK
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
BENEFITS
PRODUCT SUMMARY
• Increased operating efficiency
• Direct mounting to heatsink
VCES
1200 V
110 A
2.5 V
IC DC
• Performance optimized for power conversion: UPS,
SMPS, welding
VCE(on) at 75 A, 25 °C
• Lower EMI, requires less snubbing
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
MAX.
1200
110
UNITS
Collector to emitter voltage
VCES
V
TC = 25 °C
Continuous collector current
IC
TC = 76 °C
75
Repetitive rating; VGE = 20 V, pulse width
limited by maximum junction temperature
Pulsed collector current
ICM
ILM
150
150
A
Peak switching current
See fig. 17
Peak diode forward current
Gate to emitter voltage
RMS isolation voltage
IFM
VGE
150
20
V
VISOL
Any terminal to case, t = 1 minute
TC = 25 °C
2500
390
Maximum power dissipation
PD
W
°C
TC = 85 °C
200
Operating junction temperature range
Storage temperature range
TJ
- 40 to + 150
- 40 to + 125
TStg
Document Number: 94427
Revision: 03-May-10
For technical questions, contact: indmodules@vishay.com
www.vishay.com
1
GA75TS120UPbF
Vishay High Power Products
"Half-Bridge" IGBT INT-A-PAK
(Ultrafast Speed IGBT), 75 A
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
-
MAX.
-
UNITS
Collector to emitter breakdown voltage
V(BR)CES
VGE = 0 V, IC = 1 mA
1200
VGE = 15 V, IC = 75 A
-
-
2.5
2.25
4.5
- 14
3.7
3.3
6.0
-
Collector to emitter voltage
Gate threshold voltage
VCE(on)
VGE(th)
V
IC = 75 A, VGE = 15 V, TJ = 125 °C
3.0
-
VCE = 6.0 V, IC = 750 μA
Temperature coefficient of threshold voltage ΔVGE(th)/ΔTJ
mV/°C
S
VCE = 25 V, IC = 75 A
Pulse width 50 μs, single shot
VGE = 0 V, VCE = 1200 V
Forward transconductance
gfe
-
107
-
-
-
-
-
-
0.03
4.3
3
1.0
10
Collector to emitter leaking current
ICES
mA
VGE = 0 V, VCE = 1200 V, TJ = 125 °C
VGE = 0 V, IF = 75 A
3.6
3.3
250
Diode forward voltage
VF
V
IF = 75 A, VGE = 0 V, TJ = 125 °C
2.83
-
Gate to emitter leakage current
IGES
VGE
=
20 V
nA
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
570
96
MAX.
854
UNITS
Total gate charge (turn-on)
Gate to emitter charge (turn-on)
Gate to collector charge (turn-on)
Turn-on delay time
Qg
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
VCC = 400 V
IC = 85 A
Qge
Qgc
td(on)
tr
144
nC
189
437
60
283
-
Rg1 = 15 Ω
Rise time
-
R
g2 = 0 Ω
IC = 75 A
CC = 720 V
VGE 15 V
Inductor load
TJ = 25 °C
ns
mJ
ns
Turn-off delay time
td(off)
tf
395
245
5
-
V
Fall time
-
Turn-on switching energy
Turn-off switching energy
Total switching energy
Turn-on delay time
Eon
=
-
(1)
Eoff
3
-
(1)
Ets
8
-
td(on)
tr
td(off)
tf
453
70
-
Rg1 = 15 Ω
Rise time
-
R
I
g2 = 0 Ω
C = 75 A
VCC = 720 V
VGE 15 V
Inductor load
TJ = 125 °C
Turn-off delay time
415
661
8
-
Fall time
-
Turn-on switching energy
Turn-off switching energy
Total switching energy
Input capacitance
Eon
=
-
(1)
Eoff
11
-
mJ
pF
(1)
Ets
19
32
-
Cies
Coes
Cres
trr
12 815
570
110
174
107
9367
VGE = 0 V
VCC = 30 V
f = 1 MHz
Rg1 = 15 Ω
g2 = 0 Ω
IC = 75 A
CC = 720 V
dI/dt = 1300 A/μs
Output capacitance
Reverse transfer capacitance
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
-
-
-
ns
A
R
Irr
-
Qrr
-
nC
V
Diode peak rate of fall of recovery during tb
dI(rec)M/dt
-
1491
-
A/μs
Note
(1)
Repetitive rating; VGE = 20 V, pulse width limited by maximum junction temperature
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
TYP.
MAX.
UNITS
IGBT
-
-
0.32
0.35
-
Thermal resistance, junction to case
RthJC
Diode
°C/W
Thermal resistance, case to sink per module
RthCS
0.1
-
case to heatsink
4.0
3.0
-
Mounting torque
Weight of module
Nm
g
case to terminal 1, 2 and 3
For screws M5 x 0.8
-
200
www.vishay.com
2
For technical questions, contact: indmodules@vishay.com
Document Number: 94427
Revision: 03-May-10
GA75TS120UPbF
Vishay High Power Products
"Half-Bridge" IGBT INT-A-PAK
(Ultrafast Speed IGBT), 75 A
80
70
60
50
40
30
20
10
0
For both:
Duty cycle: 50 %
TJ = 125 °C
Tsink = 90 °C
Gate drive as specified
Power dissipation = 83 W
Square wave:
60 % of rated
voltage
I
Ideal diodes
0.1
1
10
100
f - Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of Fundamental)
1000
100
10
160
140
120
100
80
VGE = 15 V
500 µs pulse width
DC
125 °C
25 °C
60
40
20
1
0.5
0
1.0
1.5
2.0
2.5
3.0
3.5
0
20
40
60
80
100
120
VCE - Collector to Emitter Voltage (V)
Maximum DC Collector Current (A)
Fig. 2 - Typical Output Characteristics
Fig. 4 - Case Temperature vs.
Maximum Collector Current
1000
100
10
3.0
2.5
2.0
1.5
VGE = 20 V
500 µs pulse width
IC = 150 A
125 °C
IC = 75 A
25 °C
IC = 37 A
VGE = 15 V
500 µs pulse width
1
0
30
60
90
120
150
4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0
VGE - Gate to Emitter Voltage (V)
TJ - Junction Temperature (°C)
Fig. 3 - Typical Transfer Characteristics
Fig. 5 - Typical Collector to Emitter Voltage vs.
Junction Temperature
Document Number: 94427
Revision: 03-May-10
For technical questions, contact: indmodules@vishay.com
www.vishay.com
3
GA75TS120UPbF
Vishay High Power Products
"Half-Bridge" IGBT INT-A-PAK
(Ultrafast Speed IGBT), 75 A
1
PDM
0.1
t1
D = 0.50
D = 0.20
t2
D = 0.10
D = 0.05
D = 0.02
D = 0.01
Single pulse
(thermal response)
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
t1 - Rectangular Pulse Duration (s)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction to Case
25 000
20 000
15 000
10 000
5000
26
VGE = 0 V, f = 1 MHz
Cies = Cge + Cgc, Cce shorted
Cres = Cgc
Coes = Cce + Cgc
24
22
20
18
0
10
20
30
40
50
1
10
100
RG - Gate Resistance (Ω)
VCE - Collector to Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector to Emitter Voltage
Fig. 9 - Typical Switching Losses vs. Gate Resistance
100
20
15
10
5
VCC = 400 V
IC = 85 A
IC = 150 A
IC = 75 A
10
IC = 25 A
1
0
30
60
90
120
150
0
0
200
400
600
TJ - Junction Temperature (°C)
QG - Total Gate Charge (nC)
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
Fig. 8 - Typical Gate Charge vs.
Gate to Emitter Voltage
www.vishay.com
4
For technical questions, contact: indmodules@vishay.com
Document Number: 94427
Revision: 03-May-10
GA75TS120UPbF
Vishay High Power Products
"Half-Bridge" IGBT INT-A-PAK
(Ultrafast Speed IGBT), 75 A
70
60
50
40
30
20
10
0
16 000
VR = 720 V
TJ = 125 °C
TJ = 25 °C
RG1 = 15 Ω
RG2 = 0 Ω
TC = 125 °C
VCC = 720 V
VGE = 15 V
12 000
8000
4000
0
IF = 150 A
IF = 75 A
IF = 37 A
0
20
40
60
80 100 120 140 160
500
1000
1500
2000
IC - Collector Current (A)
dIF/dt (A/µs)
Fig. 11 - Typical Switching Losses vs.
Collector to Emitter Current
Fig. 14 - Typical Stored Charge vs. dIF/dt
200
150
100
50
250
200
150
100
VR = 720 V
TJ = 125 °C
TJ = 25 °C
VGE = 20 V
TJ = 125 °C
VCE measured at terminal (peak voltage)
IF = 150 A
IF = 75 A
IF = 37 A
Safe operating area
0
0
200
400 600
800 1000 1200 1400
500
1000
dIF/dt (A/µs)
Fig. 15 - Typical Reverse Recovery Time vs. dIF/dt
1500
2000
VCE - Collector to Emitter Voltage (V)
Fig. 12 - Reverse Bias SOA
1000
100
10
200
IF = 150 A
IF = 75 A
IF = 37 A
160
120
80
40
TJ = 125 °C
TJ = 25 °C
VR = 720 V
TJ = 125 °C
TJ = 25 °C
1
0.5
0
500
1.0
1.5
2.0
2.5
3.0
3.5
2000
1000
1500
VF - Forward Voltage Drop (V)
dIF/dt (A/µs)
Fig. 16 - Typical Recovery Current vs. dIF/dt
Fig. 13 - Typical Forward Voltage Drop vs.
Instantaneous Forward Current
Document Number: 94427
Revision: 03-May-10
For technical questions, contact: indmodules@vishay.com
www.vishay.com
5
GA75TS120UPbF
Vishay High Power Products
"Half-Bridge" IGBT INT-A-PAK
(Ultrafast Speed IGBT), 75 A
L2
Gate voltage D.U.T.
+ VG
10 % + VG
L
L1
RG2
+
-
VCC
-
D.U.T. voltage
and current
VCE
RG1
RG2
+
10 % IC
VCC
Ipk
IC
90 % IC
5 % VCE
+ VG2
RG1
- VG2
td(on)
tr
t2
Eon
t2
=
VCE IC dt
t1
L3
VCC = 60 % of BVCES
LS = L1 + L2 + L3
VGE 15 V
t1
=
Fig. 17a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr,
Irr, td(on), tr, td(off), tf
Fig. 17c - Test Waveforms for Circuit of Fig. 18a,
Defining Eon, td(on), tr
trr
IC dt
tx
90 % VGE
trr
Qrr
=
IC
+ VGE
tx
VCE
10 % Irr
10 % VCC
VCC
90 % IC
5 % IC
10 % VCE
Vpk
IC
Irr
IC
Diode recovery
waveforms
td(off)
tf
t1 + 5 µs
Eoff
=
VCE IC dt
t1
t4
Erec
=
VD IC dt
t3
Diode reverse
recovery energy
t3
t4
t1
t2
Fig. 17b - Test Waveforms for Circuit of Fig. 18a,
Defining Eoff, td(off), tf
Fig. 17d - Test Waveforms for Circuit of Fig. 18a,
Defining Erec, trr, Qrr, Irr
VG
Gate signal
device under test
Current D.U.T.
Voltage in D.U.T.
Current in D1
t0
t1 t2
Fig. 17e - Macro Waveforms for Figure 18a‘s Test Circuit
www.vishay.com
6
For technical questions, contact: indmodules@vishay.com
Document Number: 94427
Revision: 03-May-10
GA75TS120UPbF
Vishay High Power Products
"Half-Bridge" IGBT INT-A-PAK
(Ultrafast Speed IGBT), 75 A
L
D.U.T.
VC*
1000 V
600 V
RL =
50 V
4 x IC at 25 °C
0 - 600 V
6000 µF
100 V
* Driver same type as D.U.T.; VC = 80 % of VCE (max)
Note: Due to the 50 V power supply, pulse width and inductor
will increase to obtain rated Id
Fig. 18 - Clamped Inductive Load Test Circuit
Fig. 19 - Pulsed Collector Current Test Circuit
ORDERING INFORMATION TABLE
Device code
G
A
75
T
S
120
U
PbF
1
2
3
4
5
6
7
8
1
2
3
4
5
6
7
8
-
-
-
-
-
-
-
-
Insulated gate bipolar transistor (IGBT)
Generation 4, IGBT silicon, DBC construction
Current rating (75 = 75 A)
Circuit configuration (T = Half-bridge)
Package indicator (INT-A-PAK)
Voltage rating (120 = 1200 V)
Speed/type (U = Ultrafast)
PbF = Lead (Pb)-free
CIRCUIT CONFIGURATION
3
6
7
1
4
5
2
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95173
Document Number: 94427
Revision: 03-May-10
For technical questions, contact: indmodules@vishay.com
www.vishay.com
7
Outline Dimensions
Vishay Semiconductors
INT-A-PAK IGBT
DIMENSIONS in millimeters (inches)
Ø 6.5
(Ø 0.25)
80 (3.15)
14.3
(0.56)
17 (0.67) 23 (0.91)
23 (0.91)
5 (0.20)
3
1
2
66 (2.60)
94 (3.70)
37 (1.44)
3 screws M6 x 10
Document Number: 95173
Revision: 04-May-09
For technical questions, contact: indmodules@vishay.com
www.vishay.com
1
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to
obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 11-Mar-11
www.vishay.com
1
相关型号：
©2020 ICPDF网 联系我们和版权申明