GB50RF60K [VISHAY]
Insulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, ECONO2PIM-24;
| 型号： | GB50RF60K |
| 厂家： | 
VISHAY |
| 描述： | Insulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, ECONO2PIM-24 栅 |
| 文件： | 总15页 (文件大小：239K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GB50RF60K
Vishay High Power Products
IGBT PIM Module, 48 A
FEATURES
• Low VCE(on) non punch through IGBT technology
• Low diode VF
• 10 µs short circuit capability
• Square RBSOA
RoHS
COMPLIANT
• HEXFRED® antiparallel diode with ultrasoft
reverse recovery characteristics
• Positive VCE(on) temperature coefficient
• Ceramic DBC substrate
• Low stray inductance design
• Speed 8 to 60 kHz
ECONO2 PIM
• Totally lead (Pb)-free
• Designed and qualified for industrial market
PRODUCT SUMMARY
BENEFITS
VCES
600 V
2.00 V
> 10 µs
48 A
• Benchmark efficiency for motor control
• Rugged transient performance
• Low EMI, requires less snubbing
• Direct mounting to heatsink
• PCB solderable terminals
V
CE(on) (typical)
t
sc at TJ = 150 °C
IC at TC = 80 °C
• Low junction to case thermal resistance
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VCES
TEST CONDITIONS
MAX.
600
20
UNITS
Collector to emitter voltage
Gate to emitter voltage
V
VGES
TC = 25 °C
C = 80 °C
80
Continuous collector current
IC
A
A
T
48
Inverter
Pulsed collector current
See fig. C.T.5
ICM
160
Diode maximum forward current
Power dissipation
IFM
PD
Pulsed
One IGBT
160
215
800
50
A
W
V
25 °C
Repetitive peak reverse voltage
VRRM
IF(AV)
IFSM
I2t
Average output current
Surge current (non-repetitive)
I2t (non-repetitive)
50/60 Hz sine pulse 80 °C
Input
Rectifier
A
A2s
V
310
525
600
20
Rated VRRM applied, 10 ms,
sine pulse
Collector to emitter voltage
Gate to emitter voltage
VCES
VGES
TC = 25 °C
40
Continuous collector current
IC
A
A
T
C = 80 °C
20
Pulsed collector current
See fig. C.T.5
ICM
80
Brake
Power dissipation
PD
VRRM
TJ
One IGBT
AC (1 min)
25 °C
111
600
W
V
Repetitive peak reverse voltage
Maximum operating junction temperature
Storage temperature range
Isolation voltage
150
°C
V
TStg
VISOL
- 40 to + 125
2500
Document Number: 94480
Revision: 10-Sep-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
1
GB50RF60K
IGBT PIM Module, 48 A
Vishay High Power Products
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX. UNITS
Collector to emitter breakdown voltage
BV(CES)
VGE = 0 V, IC = 500 µA
600
-
-
-
V
Temperature coefficient of
breakdown voltage
VGE = 0 V, IC = 1 mA
(25 °C to 125 °C)
ΔV(BR)CES/ΔTJ
-
0.73
V/°C
IC = 50 A, VGE = 15 V
-
2.00
2.32
2.32
2.73
-
2.58
3.14
2.99
3.64
5.5
IC = 70 A, VGE = 15 V
-
-
Collector to emitter voltage
VCE(on)
IC = 50 A, VGE = 15 V, TJ = 125 °C
IC = 70 A, VGE = 15 V, TJ = 125 °C
VCE = VGE, IC = 250 µA
V
-
Gate threshold voltage
VGE(th)
3.5
Threshold voltage temperature
coefficient
VCE = VGE, IC = 1 mA
(25 °C to 125 °C)
ΔVGE(th)/ΔTJ
-
- 11
-
mV/°C
VGE = 0 V, VCE = 600 V
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
100
-
Zero gate voltage collector current
ICES
µA
nA
VGE = 0 V, VCE = 600 V, TJ = 125 °C
150
-
Gate to emitter leakage current
Total gate charge (turn-on)
Gate to emitter charge (turn-on)
Gate to collector charge (turn-on)
Turn-on switching loss
Turn-off switching loss
Total switching loss
IGES
QG
VGE
=
20 V
200
263
33
175
22
IC = 50 A
VCC = 460 V
QGE
QGC
Eon
Eoff
Etot
Eon
Eoff
Etot
td(on)
tr
nC
Inverter
IGBT
V
GE = 15 V
86
129
1.24
0.92
2.16
2.05
1.48
3.53
351
81
0.83
0.61
1.44
1.37
0.99
2.53
234
54
IC = 50 A, VCC = 300 V
VGE = 15 V, RG = 22 Ω
L = 200 µH, TJ = 25 °C (1)
mJ
Turn-on switching loss
Turn-off switching loss
Total switching loss
IC = 50 A, VCC = 300 V
VGE = 15 V, RG = 22 Ω
L = 200 µH, TJ = 125 °C (1)
Turn-on delay time
IC = 50 A, VCC = 300 V
VGE = 15 V, RG = 22 Ω
L = 200 µH, TJ = 125 °C
Rise time
ns
Turn-off delay time
td(off)
tf
246
95
369
143
4402
1110
152
Fall time
Input capacitance
Cies
Coes
Cres
2935
740
101
VGE = 0 V
Output capacitance
V
CC = 30 V
pF
f = 1 MHz
Reverse transfer capacitance
TJ = 125 °C, IC = 100 A
RG = 22 Ω, VGE = 15 V to 0
Reverse bias safe operating area
Short circuit safe operating area
RBSOA
SCSOA
Fullsquare
-
Inverter
IGBT
I
P = 360 A to 490 A
VCC = 300 V,
G = 47 Ω, VGE = 15 V to 0 V
10
-
-
-
µs
A
R
TJ = 125 °C
VCC = 300 V, IF = 50 A, L = 200 µH
Diode peak reverse recovery current
Diode forward voltage drop
Irr
29
R
G = 22 Ω, VGE = 15 V
IF = 50 A
-
-
-
-
1.32
1.44
1.28
1.43
1.78
2.10
1.80
2.13
Inverter
Diode
IF = 70 A
VFM
V
IF = 50 A, TJ = 125 °C
IF = 70 A, TJ = 125 °C
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For technical questions, contact: ind-modules@vishay.com
Document Number: 94480
Revision: 10-Sep-08
GB50RF60K
IGBT PIM Module, 48 A
Vishay High Power Products
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX. UNITS
Maximum forward voltage drop
VFM
IF = 50 A
-
-
2.38
V
mA
mΩ
V
TJ = 25 °C, VR = 800 V
TJ = 150 °C, VR = 800 V
-
-
-
0.2
Maximum reverse leakage current
IRM
Input
Rectifier
-
2
-
Forward slope resistance
rT
-
-
7.8
0.90
-
TJ = 150 °C
Conduction thresold voltage
Collector to emitter breakdown voltage
VF (TO)
BV(CES)
-
VGE = 0 V, IC = 500 µA
600
-
Temperature coefficient of
breakdown voltage
VGE = 0 V, IC = 1 mA
(25 °C to 125 °C)
ΔV(BR)CES/ΔTJ
-
0.7
-
V/°C
IC = 25 A, VGE = 15 V
-
-
2.05
2.88
2.34
3.42
-
2.46
3.79
2.59
3.79
6
I
C = 50 A, VGE = 15 V
Collector to emitter voltage
VCE(on)
IC = 25 A, VGE = 15 V, TJ = 125 °C
IC = 50 A, VGE = 15 V, TJ = 125 °C
VCE = VGE, IC = 250 µA
-
V
-
Gate threshold voltage
VGE(th)
4
Threshold voltage temperature
coefficient
VCE = VGE, IC = 1 mA
(25 °C to 125 °C)
ΔVGE(th)/ΔTJ
-
- 10.4
-
mV/°C
VGE = 0 V, VCE = 600 V
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
100
-
Zero gate voltage collector current
ICES
µA
nA
VGE = 0 V, VCE = 600 V, TJ = 125 °C
500
-
Gate to emitter leakage current
Total gate charge (turn-on)
Gate to emitter charge (turn-on)
Gate to collector charge (turn-on)
Turn-on switching loss
Turn-off switching loss
Total switching loss
IGES
QG
VGE
=
20 V
200
105
18
Brake
IGBT
70
IC = 25 A
QGE
QGC
Eon
Eoff
Etot
Eon
Eoff
Etot
td(on)
tr
V
V
CC = 300 V
GE = 15 V
12
nC
35
53
0.43
0.19
0.62
0.57
0.34
0.91
160
45
0.64
0.29
0.93
0.86
0.51
1.37
240
68
IC = 25 A, VCC = 300 V
VGE = 15 V, RG = 47 Ω
L = 500 µH, TJ = 25 °C (1)
mJ
Turn-on switching loss
Turn-off switching loss
Total switching loss
IC = 25 A, VCC = 300 V
VGE = 15 V, RG = 47 Ω
L = 500 µH, TJ = 125 °C (1)
Turn-on delay time
IC = 25 A, VCC = 300 V
VGE = 15 V, RG = 47 Ω
L = 500 µH, TJ = 125 °C
Rise time
ns
Turn-off delay time
td(off)
tf
170
90
235
135
1832
386
60
Fall time
Input capacitance
Cies
Coes
Cres
1221
257
40
VGE = 0 V
VCC = 30 V
f = 1 MHz
Output capacitance
pF
Reverse transfer capacitance
Brake
IGBT
TJ = 150 °C, IC = 50 A
RG = 47 Ω, VGE = 15 V to 0
Reverse bias safe operating area
Short circuit safe operating area
RBSOA
SCSOA
Fullsquare
-
IP = 280 A to 320 A
V
CC = 300 V,
10
-
µs
RG = 47 Ω, VGE = 15 V to 0
Document Number: 94480
Revision: 10-Sep-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
3
GB50RF60K
IGBT PIM Module, 48 A
Vishay High Power Products
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX. UNITS
VCC = 300 V, IF = 25 A, L = 500 µH
Diode peak reverse recovery current
Irr
-
28
-
A
V
GE = 15 V to 0, RG = 47 Ω
IF = 25 A
-
-
-
-
-
-
-
1.51
1.94
1.54
2.05
5000
4933
3375
1.74
2.52
1.60
2.15
-
Brake
Diode
IF = 50 A
Diode forward voltage drop
VFM
V
IF = 25 A, TJ = 125 °C
IF = 50 A, TJ = 125 °C
TJ = 25 °C
Resistance
B value
R
B
Ω
NTC
TJ = 100 °C
-
TJ = 25 °C/50 °C
-
K
Note
(1)
Energy losses include “tail” and diode reverse recovery
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNITS
Junction to case inverter IGBT thermal resistance
Junction to case inverter FRED thermal resistance
Junction to case brake DIODE thermal resistance
Junction to case brake IGBT thermal resistance
Junction to case input rectifier thermal resistance
Case to sink, flat, greased surface
Mounting torque (M5)
-
-
0.58
1.25
2.13
1.13
1.03
-
-
-
RthJC
-
-
°C/W
-
-
-
-
-
RthCS
0.05
-
2.7
-
3.3
-
Nm
g
Weight
170
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For technical questions, contact: ind-modules@vishay.com
Document Number: 94480
Revision: 10-Sep-08
GB50RF60K
IGBT PIM Module, 48 A
Vishay High Power Products
INVERTER
100
20
16
12
8
Vge=18V
Vge=15V
Vge=12V
Vge=10V
Vge=8V
I
ce=25A
ce=50A
ce=100A
80
60
40
20
0
I
I
4
0
0
1
2
3
4
5
10
15
20
Vce (V)
Vge (V)
Fig. 1 - Typical IGBT Output Characteristics
TJ = 25 °C; tp = 80 µs
Fig. 4 - Typical VCE vs. VGE
TJ = 25 °C
100
80
60
40
20
0
20
16
12
8
Vge=18V
Vge=15V
Vge=12V
Vge=10V
Vge=8V
Ice=25A
Ice=50A
Ice=100A
4
0
0
1
2
3
4
5
5
10
15
20
Vge (V)
Vce (V)
Fig. 2 - Typical IGBT Output Characteristics
TJ = 125 °C, tp = 80 µs
Fig. 5 - Typical VCE vs. VGE
TJ = 125 °C
10000
1000
100
600
500
400
300
200
100
0
Cies
Tj = 25°C
Tj = 125°C
Coes
Cres
10
0
10 20 30 40 50 60 70 80
0
2
4
6
8
10 12 14
Vge (V)
Fig. 3 - Typical Transfer Characteristics
CE = 50 V; tp = 10 µs
Vce (V)
Fig. 6 - Typical Capacitance vs. VCE
VGE = 0 V; f = 1 MHz
V
Document Number: 94480
Revision: 10-Sep-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
5
GB50RF60K
IGBT PIM Module, 48 A
Vishay High Power Products
1
16
14
tdOFF
tdON
tF
460V
12
tR
10
8
0.1
6
4
2
0.01
0
50
60
70
Ic (A)
Fig. 10 - Typical Switching Time vs. IC
80
90
100
0
30
60
90 120 150 180
QG, Total Gate Charge (nC)
Fig. 7 - Typical Gate Charge vs. VGE
ICE = 50 A
TJ = 125 °C; L = 200 µH; VCE = 300 V; RG = 22 Ω; VGE = 15 V
3
160
120
80
Tj = 25°C
Tj = 125°C
E (TOT)
2.5
2
1.5
1
E (OFF)
40
0.5
0
E (ON)
20
0
0
10
30
40
50
0
0.5
1
1.5
2
2.5
Rg (Ω)
Fig. 11 - Typical Energy Loss vs. RG
Vf (V)
Fig. 8 - Typical Diode Forward Characteristics
tp = 80 µs
TJ = 125 °C; L = 200 µH; VCE = 300 V; ICE = 50 A, VGE = 15 V
4
1
ETOT
3.5
3
2.5
2
tdOFF
EON
tdON
0.1
t
F
1.5
1
EOFF
t
R
0.5
0
0.01
20
40
60
Ic (A)
Fig. 9 - Typical Energy Loss vs. IC
TJ = 125 °C; L = 200 µH; VCE = 300 V; RG = 22 Ω; VGE = 15 V
80
100
120
0
10
20
Rg (
30
40
50
)
Ω
Fig. 12 - Typical Switching Time vs. RG
TJ = 125 °C; L = 200 µH; VCE = 300 V; ICE = 50 A, VGE = 15 V
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For technical questions, contact: ind-modules@vishay.com
Document Number: 94480
Revision: 10-Sep-08
GB50RF60K
IGBT PIM Module, 48 A
Vishay High Power Products
70
60
50
40
30
70
60
50
40
30
Rg =
4.7Ω
Rg = 10
Rg = 22
Rg = 33
Rg = 47
Ω
Ω
Ω
Ω
10
30
50
If (A)
70
90
110
0
10
20
Rg (
30
40
50
)
Ω
Fig. 13 - Typical Diode IRR vs. IF
TJ = 125 °C
Fig. 14 - Typical Diode IRR vs. RG
TJ = 125 °C; IF = 50 A
70
60
50
40
30
600 800 1000 1200 1400 1600 1800
dif/dt (A/µs)
Fig. 15 - Typical Diode IRR vs. dIF/dt
CC = 300 V; VGE = 15 V; ICE = 50 A; TJ = 125 °C
V
THERMISTOR
INPUT RECTIFIER
140
14
12
10
8
105
70
6
Tj = 25°C
Tj = 125°C
35
4
2
0
0
0
20
40
60
80 100 120 140 160 180
0
0.5
1
1.5
2
F
2.5
T
, Junction Temperature (°C)
J
Forward Voltage Drop V (V)
Fig. 16 - Thermistor Resistance vs. Temperature
Fig. 17 - Typical Diode Forward Characteristics
tp = 80 µs
Document Number: 94480
Revision: 10-Sep-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
7
GB50RF60K
IGBT PIM Module, 48 A
Vishay High Power Products
INVERTER
1
0.5
0.3
0.1
0.1
R1
R1
R2
R2
R3
R3
0.05
i (sec)
Ri (°C/W)
0.102
τ
TJ
τJ
τ
TC
0.000609
0.010783
0.022109
τ
1τ1
τ
0.02
2τ2
3τ3
0.168
0.01
0.01
Ci= τi/Ri
/
0.310
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + tc
SINGLE PULSE
(THERMAL RESPONSE)
0.001
1E-05
1E-04
1E-03
t1 , Rectangular Pulse Duration (sec)
Fig. 18 - Maximum Transient Thermal Impedance, Junction to Case (IGBT)
1E-02
1E-01
1E+00
10
1
0.1
0.5
0.3
0.1
R1
R1
R2
R2
R3
R3
Ri (°C/W)
0.380
i (sec)
τ
0.05
TJ
τJ
τ
TC
0.001631
0.035401
0.176145
τ
0.02
0.01
1τ1
τ
0.644
2τ2
3τ3
0.200
Ci= τi/Ri
/
0.01
0.001
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + tc
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
t1 , Rectangular Pulse Duration (sec)
Fig. 19 - Maximum Transient Thermal Impedance, Junction to Case (DIODE)
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For technical questions, contact: ind-modules@vishay.com
Document Number: 94480
Revision: 10-Sep-08
GB50RF60K
IGBT PIM Module, 48 A
Vishay High Power Products
BRAKE
100
80
60
40
20
0
20
16
12
8
Vge=18V
Vge=15V
Vge=12V
Vge=10V
Vge=8V
I
ce=25A
ce=50A
ce=100A
I
I
4
0
0
1
2
3
4
5
10
15
20
Vce (V)
Vge (V)
Fig. 20 - Typical IGBT Output Characteristics
TJ = 25 °C; tp = 80 µs
Fig. 23 - Typical VCE vs. VGE
TJ = 25 °C
100
20
16
12
8
Vge=18V
Vge=15V
Vge=12V
Vge=10V
Vge=8V
80
60
40
20
0
Ice=25A
ce=50A
I
Ice=100A
4
0
0
1
2
3
4
5
5
10
15
20
Vge (V)
Vce (V)
Fig. 21 - Typical IGBT Output Characteristics
TJ = 125 °C; tp = 80 µs
Fig. 24 - Typical VCE vs. VGE
TJ = 125 °C
10000
1000
100
600
Tj = 25°C
Cies
Tj = 125°C
400
200
0
Coes
Cres
10
0
20
40
60
Vce (V)
80
100
0
2
4
6
8
10 12 14
Vge (V)
Fig. 22 - Typical Transfer Characteristics
CE = 50 V; tp = 10 µs
Fig. 25 - Typical Capacitance vs. VCE
VGE = 0 V; f = 1 MHz
V
Document Number: 94480
Revision: 10-Sep-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
9
GB50RF60K
IGBT PIM Module, 48 A
Vishay High Power Products
1
16
tdOFF
tdON
tF
300V
12
tR
0.1
8
4
0
0.01
50
60
70
Ic (A)
Fig. 29 - Typical Switching Time vs. IC
80
90
100
0
20
40
60
80
Q , Total Gate Charge (nC)
G
Fig. 26 - Typical Gate Charge vs. VGE
ICE = 25 A
TJ = 125 °C; L = 500 µH; VCE = 300 V; RG = 47 Ω; VGE = 15 V
2
100
80
60
40
20
0
Tj = 25°C
E (TOT)
Tj = 125°C
1.5
E (ON)
1
E (OFF)
0.5
0
0
10
20
30
40
50
0
0.5
1
1.5
Vf (V)
2
2.5
3
Rg (Ω)
Fig. 30 - Typical Energy Loss vs. RG
Fig. 27 - Typical Diode Forward Characteristics
tp = 80 µs
TJ = 125 °C; L = 500 µH; VCE = 300 V; ICE = 25 A; VGE = 15 V
3
1
ETOT
2
EON
tdOFF
0.1
tdON
tF
EOFF
1
tR
0
0.01
20
40
60
Ic (A)
Fig. 28 - Typical Energy Loss vs. IC
TJ = 125 °C; L = 500 µH; VCE = 300 V; RG = 47 Ω; VGE = 15 V
80
100
120
0
10
20
Rg (
30
40
50
)
Ω
Fig. 31 - Typical Switching Time vs. RG
TJ = 125 °C; L = 500 µH; VCE = 300 V; ICE = 25 A; VGE = 15 V
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For technical questions, contact: ind-modules@vishay.com
Document Number: 94480
Revision: 10-Sep-08
GB50RF60K
IGBT PIM Module, 48 A
Vishay High Power Products
50
45
40
35
30
25
44
40
36
32
28
Rg =
4.7Ω
Rg = 10
Ω
Rg = 22
Ω
Rg = 33
Ω
Rg = 47
Ω
10
30
50
If (A)
70
90
110
0
10
20
Rg (
30
40
50
)
Ω
Fig. 32 - Typical Diode IRR vs. IF
TJ = 125 °C
Fig. 33 - Typical Diode IRR vs. RG
TJ = 125 °C; IF = 25 A
80
60
40
20
0
800
1200
1600
2000
dif/dt (A/µs)
Fig. 34 - Typical Diode IRR vs. dIF/dt
CC = 300 V; VGE = 15 V; ICE = 25 A; TJ = 125 °C
V
Document Number: 94480
Revision: 10-Sep-08
For technical questions, contact: ind-modules@vishay.com
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11
GB50RF60K
IGBT PIM Module, 48 A
Vishay High Power Products
10
1
0.5
0.3
Ri (°C/W)
0.263
i (sec)
τ
R1
R1
R2
R2
R3
R3
0.000265
0.005336
0.022245
TJ
τJ
τ
TC
0.1
0.284
0.1
τ
1τ1
τ
2τ2
3τ3
0.05
0.583
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + tc
Ci= τi/Ri
/
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
0.01
1E-05
1E-04
1E-03
t1 , Rectangular Pulse Duration (sec)
Fig. 35 - Maximum Transient Thermal Impedance, Junction to Case (Brake IGBT)
1E-02
1E-01
1E+00
10
1
0.5
0.3
R1
R1
R2
R2
R3
R3
i (sec)
Ri (°C/W)
0.436
τ
TJ
τJ
τ
TC
0.1
0.000207
0.00051
τ
1τ1
τ
2τ2
3τ3
0.384
0.05
0.1
0.01
Ci= τi/Ri
/
0.023774
1.310
0.02
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + tc
SINGLE PULSE
(THERMAL RESPONSE)
1E-05
1E-04
1E-03
t1 , Rectangular Pulse Duration (sec)
Fig. 36 - Maximum Transient Thermal Impedance, Junction to Case (Brake Diode)
1E-02
1E-01
1E+00
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For technical questions, contact: ind-modules@vishay.com
Document Number: 94480
Revision: 10-Sep-08
GB50RF60K
IGBT PIM Module, 48 A
Vishay High Power Products
VCC
ICM
R =
+
VCC
+
VCC
-
D.U.T.
VGE
-
1 mA
RG
IC
Fig. C.T.3 - S.C. SOA Circuit
Fig. C.T.1 - Gate Charge Circuit (turn-off)
Diode clamp/
D.U.T.
Diode clamp/
D.U.T.
L
L
-
+
-
+
5 V
D.U.T./
driver
5 V
D.U.T./
driver
+
-
+
-
VCC
VCC
RG
RG
Fig. C.T.4 - Switching Loss Circuit
Fig. C.T.2 - RBSOA Circuit
VCC
ICM
R =
+
-
VCC
D.U.T.
RG
Fig. C.T.5 - Resistive Load Circuit
Document Number: 94480
Revision: 10-Sep-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
13
GB50RF60K
IGBT PIM Module, 48 A
Vishay High Power Products
ORDERING INFORMATION TABLE
Device code
G
B
50
R
F
60
K
1
2
3
4
5
6
7
1
2
3
4
-
-
-
-
Insulated Gate Bipolar Transistor (IGBT)
B = IGBT Generation 5 NPT
Current rating (50 = 50 A)
Circuit configuration
(R = Three phase bridge-brake-inverter with thermistor)
Package indicator (F = ECONO2)
Voltage rating (60 = 600 V)
5
6
7
-
-
-
Speed/type (K = Ultrafast IGBT/Speed 8 to 60 kHz)
CIRCUIT CONFIGURATION
45 47
39
36
35
33
32
PW
P1D
P2D
P3D
CH-D
CH-T
PU
PV
22
38
2
5
8
11
14
17
30
N1D
N2D
N3D
30
28
27
NU
NV
NW
26
48 50
R
23
24
LINKS TO RELATED DOCUMENTS
Dimensions
http://www.vishay.com/doc?95083
http://www.vishay.com/doc?95071
Part marking information
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14
For technical questions, contact: ind-modules@vishay.com
Document Number: 94480
Revision: 10-Sep-08
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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