GBU4J-E3/22 [VISHAY]
Bridge Rectifier Diode, 1 Phase, 3A, 600V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, CASE GBU, 4 PIN;
| 型号： | GBU4J-E3/22 |
| 厂家： | 
VISHAY |
| 描述： | Bridge Rectifier Diode, 1 Phase, 3A, 600V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, CASE GBU, 4 PIN 局域网 二极管 |
| 文件： | 总4页 (文件大小：85K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GBU4A thru GBU4M
Vishay General Semiconductor
Glass Passivated Single-Phase Bridge Rectifier
FEATURES
• UL Recognition file number E54214
• Ideal for printed circuit boards
• High surge current capability
• High case dielectric strength of 1500 V
• Solder Dip 260 °C, 40 seconds
RMS
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
Case Style GBU
General purpose use in ac-to-dc bridge full wave
rectification for Monitor, TV, Printer, Switching Mode
Power Supply, Adapter, Audio equipment, and Home
Appliances applications.
MAJOR RATINGS AND CHARACTERISTICS
MECHANICAL DATA
Case: GBU
Epoxy meets UL 94V-0 flammability rating
IF(AV)
VRRM
IFSM
IR
4 A
50 V to 1000 V
150 A
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade
5 µA
VF
1.0 V
Tj max.
150 °C
Polarity: As marked on body
Mounting Torque: 10 cm-kg (8.8 inches-lbs) max.
Recommended Torque: 5.7 cm-kg (5 inches-lbs)
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)
A
PARAMETER
SYMBOL GBU4A GBU4B GBU4D GBU4G GBU4J GBU4K GBU4M UNIT
Maximum repetitive peak
reverse voltage
VRRM
50
100
200
400
600
800
1000
V
Maximum RMS voltage
VRMS
VDC
35
50
70
140
200
280
400
4.0
420
600
560
800
700
V
V
Maximum DC blocking voltage
100
1000
Maximum average forward
rectified output current at
TC = 100 °C (1)
TA = 40 °C (2)
IF(AV)
A
A
3.0
Peak forward surge
current single sine-wave
superimposed on rated load
IFSM
150
Rating for fusing (t < 8.3 ms)
I2t
93
A2sec
°C
Operating junction and
storage temperature range
TJ, TSTG
- 55 to + 150
Note:
(1) Unit case mounted on 1.6 x 1.6 x 0.06" thick (4.0 x 4.0 x 0.15 cm) Al. Plate
(2) Units mounted on P.C.B. with 0.5 x 0.5" (12 x 12 mm) copper pads and 0.375" (9.5 mm) lead length
Document Number 88614
10-Oct-06
www.vishay.com
1
GBU4A thru GBU4M
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted)
A
PARAMETER
TEST CONDITIONS SYMBOL GBU4A GBU4B GBU4D GBU4G GBU4J GBU4K GBU4M UNIT
Maximum
instantaneous
forward drop per diode
at 4.0 A
VF
1.0
V
Maximum DC
reverse current at
rated DC blocking
voltage per diode
TA = 25 °C
TA = 125 °C
5.0
500
IR
µA
pF
Typical junction
capacitance per diode
at 4.0 A, 1 MHz
CJ
100
45
THERMAL CHARACTERISTICS (T = 25 °C unless otherwise noted)
A
PARAMETER
SYMBOL GBU4A GBU4B GBU4D GBU4G GBU4J GBU4K GBU4M UNIT
(2)
RθJA
RθJC
22
4.2
Typical thermal resistance
°C/W
(1)
Note:
(1) Unit case mounted on AI plate heatsink
(2) Units mounted on P.C.B. with 0.5 x 0.5" (12 x 12 mm) copper pads and 0.375" (9.5 mm) lead length
ORDERING INFORMATION
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
Tube
GBU4J-E3/45
3.565
45
72
20
GBU4J-E3/72
3.565
200
Paper Box
RATINGS AND CHARACTERISTICS CURVES
(T = 25 °C unless otherwise noted)
A
4.0
150
100
50
Heatsink Mounting, T
1.6 x 1.6 x 0.06" Thk
(4.0 x 4.0 x 0.15 cm) AL. Plate
C
T
j
= Tj max.
Single Sine-Wave
3.0
2.0
1.0 P.C.B. Mounting, T
A
0.47 x 0.47" (12 x 12 mm) Copper Pads
0.375" (9.5 mm) Lead Length
60 Hz Resistive or Inductive Load
1.0 Cycle
0
0
0
50
100
150
1
10
Number of Cycles at 60 Hz
100
Temperature (°C)
Figure 1. Derating Curve Output Rectified Current
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
www.vishay.com
2
Document Number 88614
10-Oct-06
GBU4A thru GBU4M
Vishay General Semiconductor
100
10
1000
100
10
Tj = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
1
Tj = 25 °C
Pulse Width = 300 µs
1 % Duty Cycle
0.1
50 - 400 V
600 - 1000 V
0.01
10
Reverse Voltage (V)
100
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.1
1
Instantaneous Forward Voltage (V)
Figure 3. Typical Forward Characteristics Per Diode
Figure 5. Typical Junction Capacitance Per Diode
500
100
50 - 400 V
600 - 1000 V
100
10
Tj = 125 °C
10
1
1
Tj = 25 °C
0.1
0.01
0.1
0.01
0
20
40
60
80
100
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
t - Heating Time (s)
Figure 4. Typical Reverse Leakage Characteristics Per Diode
Figure 6. Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Case Type GBU
0.140 (3.56)
0.130 (3.30)
0.880 (22.3)
0.860 (21.8)
0.020 R (TYP.)
0.125 (3.2) x 45°
CHAMFER
9°
TYP.
0.310 (7.9)
0.290 (7.4)
0.160 (4.1)
0.140 (3.5)
0.740 (18.8)
0.720 (18.3)
0.075
(2.03)
(1.52)
0.080
0.060
0.085 (2.16)
0.065 (1.65)
(1.9)
R
.
5°
TYP.
0.085 (2.16)
0.710 (18.0)
0.075 (1.90)
0.690 (17.5)
0.100 (2.54)
0.085 (2.16)
0.050 (1.27)
0.040 (1.02)
0.022 (0.56)
0.018 (0.46)
(4.83)
(5.33)
0.080 (2.03)
0.065(1.65)
0.190
0.210
Polarity shown on front side of case, positive lead by beveled corner
Document Number 88614
10-Oct-06
www.vishay.com
3
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1
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