GFB70N03-31B [VISHAY]

Power Field-Effect Transistor, 70A I(D), 30V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB;


型号：	GFB70N03-31B
厂家：	VISHAY
描述：	Power Field-Effect Transistor, 70A I(D), 30V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB 开关脉冲晶体管
文件：	总5页 (文件大小：97K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

GFB70N03

N-Channel Enhancement-Mode MOSFET

30V R 8 Ω I 70A

DS(ON) m D

TO-263AB

0.160 (4.06)

0.190 (4.83)

0.380 (9.65)

0.420 (10.67)

0.045 (1.14)

0.055 (1.40)

0.21 (5.33)

Min.

0.42

(10.66)

0.055 (1.39)

0.066 (1.68)

0.320 (8.13)

0.360 (9.14)

0.33

(8.38)

0.575 (14.60)

0.625 (15.88)

0.63

(17.02)

Dimensions in inches

and (millimeters)

Seating Plate

0.120 (3.05)

0.155 (3.94)

-T-

Mounting Pad

Layout

0.014 (0.35)

0.096 (2.43)

0.102 (2.59)

0.020 (0.51)

0.027 (0.686)

0.037 (0.940)

0.100 (2.54)

0.130 (3.30)

0.08

(2.032)

0.12

(3.05)

Mechanical Data

Case: JEDEC TO-263 molded plastic body

0.24

(6.096)

Terminals: Leads solderable per MIL-STD-750,

Method 2026

Features

• Advanced Trench Process Technology

High temperature soldering guaranteed:

250°C/10 seconds at terminals

• High Density Cell Design for Ultra Low On-Resistance

• Rugged-Avalanche energy rated

Mounting Position: Any

Weight: 1.3g

Packaging Codes – Options:

31A – 800 per 13” reel (16mm tape), 8K per carton

31B – 800 per 13” reel (16mm tape), 4K per carton

• Specially Designed for Low Voltage DC/DC Converters

• Fast Switching for High Efficiency

Maximum Ratings and Thermal Characteristics(T_A= 25°C unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

V_DS

Gate-Source Voltage

V_GS

I_D

Continuous Drain Current⁽¹⁾

Pulsed Drain Current

I_DM

200

300

Drain-Source Avalanche Energy⁽²⁾

Drain-Source Avalanche Current⁽²⁾

W_DSS

I_AR

_C= 25°C

62.5

Maximum Power Dissipation

P_D

T_C= 100°C

Operating Junction and Storage Temperature Range

Lead Temperature (1/8” from case for 5 sec.)

Junction-to-Case Thermal Resistance

T_J, T_stg

T_L

–55 to 150

°C

275

2.0

R_θJC

R_θJA

°C/W

Junction-to-Ambient Thermal Resistance

Notes: (1) Maximum DC current limited by the package

(2) Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%

(3) 1-in²2oz. Cu PCB mounted

3/1/01

GFB70N03

N-Channel Enhancement-Mode MOSFET

Electrical Characteristics(T_J= 25°C unless otherwise noted)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Drain-Source Breakdown Voltage

Gate Threshold Voltage

Gate-Body Leakage

Zero Gate Voltage Drain Current

On-State Drain Current⁽¹⁾

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 250µA

V_DS= V_GS, I_D= 250µA

V_DS= 0V, V_GS= ±20V

V_DS= 30V, V_GS= 0V

V_DS≥ 5V, V_GS= 10V

V_GS= 10V, I_D= 35A

V_GS= 4.5V, I_D= 30A

V_DS= 15V, I_D= 35A

1.0

—

3.0

±100

µA

I_DSS

I_D(on)

—

Drain-Source On-State Resistance⁽¹⁾

R_DS(on)

g_fs

mΩ

Forward Transconductance⁽¹⁾

—

Dynamic

V_DS=15V, V_GS=5V, I_D=35A

—

Total Gate Charge

Q_g

V_DS= 15V, V_GS= 10V

I_D= 35A

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Rise Time

Q_gs

Q_gd

t_d(on)

t_r

—

167

—

V_DD= 15V, R_L= 15Ω

I_D1A, V_GEN= 10V

R_G= 6Ω

Turn-Off Delay Time

Fall Time

t_d(off)

t_f

100

Input Capacitance

C_iss

C_oss

C_rss

V_GS= 0V

3400

618

300

Output Capacitance

Reverse Transfer Capacitance

Source-Drain Diode

Max Diode Forward Current

Diode Forward Voltage⁽¹⁾

V_DS= 15V

—

f = 1.0MH_Z

—

I_S

—

V_SD

I_S= 35A, V_GS= 0V

0.9

1.3

Note: (1) Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%

VDD

t_on

t_off

Switching

Test Circuit

Switching

Waveforms

t_d(on)

t_d(off)

t_r

90%

t_f

90 %

VIN

VOUT

10%

Output, VOUT

VGEN

INVERTED

DUT

90%

50%

Input, VIN 10%

PULSE WIDTH

GFB70N03

N-Channel Enhancement-Mode MOSFET

Ratings and

Characteristic Curves(T_A= 25°C unless otherwise noted)

Fig. 1 – Output Characteristics

Fig. 2 – Transfer Characteristics

10V

6.0V

4.5V

V_DS= 10V

4.0V

3.5V

T_J= 125°C

--55°C

3.0V

25°C

V_GS= 2.5V

0.5

1.5

2.5

V_DS-- Drain-to-Source Voltage (V)

V_GS-- Gate-to-Source Voltage (V)

Fig. 3 – Threshold Voltage vs.

Fig. 4 – On-Resistance vs.

Temperature

Drain Current

1.8

1.6

1.4

1.2

0.014

0.012

0.01

I_D= 250µA

V_GS= 4.5V

0.008

0.006

0.004

V_GS= 10V

0.8

0.6

0.002

--50

--25

100

125

150

100

I_D-- Drain Current (A)

T_J-- Junction Temperature (°C)

Fig. 5 – On-Resistance vs.

Junction Temperature

1.6

V_GS= 10V

I_D= 35A

1.4

1.2

0.8

0.6

--50 --25

100

125

150

T_J-- Junction Temperature (°C)

GFB70N03

N-Channel Enhancement-Mode MOSFET

Ratings and

Characteristic Curves(T_A= 25°C unless otherwise noted)

Fig. 6 – On-Resistance vs.

Gate-to-Source Voltage

Fig. 7 – Gate Charge

0.03

V_DS= 15V

I_D= 35A

0.025

0.02

0.015

T_J= 125°C

0.01

0.005

25°C

Q_g-- Gate Charge (nC)

V_GS-- Gate-to-Source Voltage (V)

Fig. 9 – Source-Drain Diode

Fig. 8 – Capacitance

Forward Voltage

4500

4000

3500

3000

2500

2000

1500

1000

500

100

f = 1MH_Z

V_GS= 0V

C_iss

T_J= 125°C

25°C

--55°C

0.1

C_oss

C_rss

0.01

0.2

0.4

0.6

0.8

1.2

1.4

V_DS-- Drain-to-Source Voltage (V)

V_SD-- Source-to-Drain Voltage (V)

GFB70N03

N-Channel Enhancement-Mode MOSFET

Ratings and

Characteristic Curves(T_A= 25°C unless otherwise noted)

Fig. 10 – Breakdown Voltage

vs. Junction Temperature

Fig. 11 – Thermal Impedance

D = 0.5

I_D= 250µA

0.2

0.1

0.05

Single Pulse

1. Duty Cycle, D= t /t

2. R

3. R

(t)= R *R

θJC(norm) θJC

θJC

= 2.0°C/W

4. T - T = P

* R

θJC

(t)

0.01

0.0001 0.001

0.01

0.1

--50

--25

100

125

150

Pulse Duration (sec.)

T_J-- Junction Temperature (°C)

Fig. 12 – Power vs. Pulse Duration

Fig. 13 – Maximum Safe Operating Area

1000

100

Single Pulse

θJC

= 2.0°C/W

800

600

= 25°C

400

200

100ms

V_GS= 10V

Single Pulse

_ΘJC= 2.0 ¡C/W

T^C= 25°C

0.1

100

0.0001 0.001

0.01

0.1

Pulse Duration (sec.)

V_DS-- Drain-Source Voltage (V)

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