GFB75N03-31B [VISHAY]
Power Field-Effect Transistor, 80A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB;
| 型号： | GFB75N03-31B |
| 厂家： | 
VISHAY |
| 描述： | Power Field-Effect Transistor, 80A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB 开关 脉冲 晶体管 |
| 文件： | 总5页 (文件大小：103K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GFB75N03
N-Channel Enhancement-Mode MOSFET
V
DS
30V R
6.5mΩ I 80A
DS(ON)
D
D
G
TO-263AB
0.160 (4.06)
0.190 (4.83)
0.380 (9.65)
0.420 (10.67)
S
0.045 (1.14)
0.055 (1.40)
0.42
(10.66)
0.21 (5.33)
Min.
D
0.33
(8.38)
0.055 (1.39)
0.066 (1.68)
0.320 (8.13)
0.360 (9.14)
0.575 (14.60)
0.625 (15.88)
PIN
D
G
S
0.63
(17.02)
Dimensions in inches
and (millimeters)
Seating Plate
Mounting Pad
Layout
0.120 (3.05)
0.155 (3.94)
-T-
0.12
(3.05)
0.014 (0.35)
0.096 (2.43)
0.102 (2.59)
0.020 (0.51)
0.027 (0.686)
0.037 (0.940)
0.100 (2.54)
0.130 (3.30)
0.08
(2.032)
0.24
(6.096)
Mechanical Data
Features
Case: JEDEC TO-263 molded plastic body
• Advanced Trench Process Technology
Terminals: Leads solderable per MIL-STD-750,
Method 2026
• High Density Cell Design for Ultra Low On-Resistance
• Specially Designed for Low Voltage DC/DC Converters
• Fast Switching for High Efficiency
High temperature soldering guaranteed:
250°C/10 seconds at terminals
Mounting Position: Any
Weight: 1.3g
Packaging Codes – Options:
31B – 800 per 13” reel (16mm tape), 4K per carton
Maximum Ratings and Thermal Characteristics(TA = 25°C unless otherwise noted)
Parameter
Symbol
VDS
VGS
ID
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current(1)
Pulsed Drain Current
30
V
±
20
80
A
IDM
240
TA = 25°C
TA = 100°C
69.4
27.8
Maximum Power Dissipation
PD
W
Operating Junction and Storage Temperature Range
Lead Temperature (1/8” from case for 5 sec.)
Junction-to-Case Thermal Resistance
TJ, Tstg
TL
–55 to 150
°C
°C
275
1.8
40
RθJC
RθJA
°C/W
°C/W
Junction-to-Ambient Thermal Resistance
Notes: (1) Maximum DC current limited by the package
2/19/01
(2) 1-in2 2oz. Cu PCB mounted
GFB75N03
N-Channel Enhancement-Mode MOSFET
Electrical Characteristics(TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
BVDSS
RDS(on)
VGS = 0V, ID = 250µA
VGS = 10V, ID = 38A
VGS = 4.5V, ID = 31A
VDS = VGS, ID = 250µA
VDS = 30V, VGS = 0V
VGS = ±20V, VDS = 0V
VDS ≥ 5V, VGS = 10V
VDS = 15V, ID = 38A
30
–
–
5.8
8.5
–
–
6.5
9.5
3.0
1.0
±100
–
V
Drain-Source On-State Resistance(1)
mΩ
–
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
VGS(th)
IDSS
IGSS
ID(on)
gfs
1.0
–
V
µA
nA
A
–
–
–
On-State Drain Current(1)
Forward Transconductance(1)
Dynamic
75
–
–
61
–
S
V
=15V, I =38A, V =5V
–
–
–
–
–
–
–
–
–
–
–
32.5
63
46
90
–
DS
D
GS
Total Gate Charge
Qg
VDS = 15V, VGS = 10V
ID = 38A
nC
Gate-Source Charge
Gate-Drain Charge
Qgs
Qgd
td(on)
tr
11
11
–
Turn-On Delay Time
Turn-On Rise Time
13
26
29
132
57
–
VDD = 15V, RL = 15Ω
ID 1A, VGEN = 10V
RG = 6Ω
16
ns
Turn-Off Delay Time
Turn-Off Fall Time
td(off)
tf
94
38
Input Capacitance
Ciss
Coss
Crss
3240
625
285
VDS = 15V, VGS = 0V
f = 1.0MHZ
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
Max. Diode Forward Current
Diode Forward Voltage
–
pF
–
IS
–
–
–
–
75
A
V
VSD
IS = 38A, VGS = 0V
0.9
1.3
Note:
(1) Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%
VDD
ton
toff
Switching
VIN
Switching
Waveforms
RD
td(on)
td(off)
tr
90%
tf
90 %
Test Circuit
D
VOUT
10%
10%
Output, VOUT
VGEN
INVERTED
RG
G
DUT
90%
50%
50%
Input, VIN 10%
S
PULSE WIDTH
GFB75N03
N-Channel Enhancement-Mode MOSFET
Ratings and
Characteristic Curves(TA = 25°C unless otherwise noted)
Fig. 1 – Output Characteristics
Fig. 2 – Transfer Characteristics
100
80
70
60
50
40
10V
6.0V
4.5V
4.0V
VDS = 10V
80
5.0V
3.5V
60
40
20
0
TJ = 125°C
30
20
10
0
--55°C
25°C
3.0V
VGS = 2.5V
0
1
2
3
4
1
2
3
4
5
VDS -- Drain-to-Source Voltage (V)
VGS -- Gate-to-Source Voltage (V)
Fig. 3 – Threshold Voltage vs.
Fig. 4 – On-Resistance vs.
Temperature
Drain Current
0.016
0.014
0.012
0.01
1.7
1.5
1.3
1.1
ID = 250µA
VGS = 4.5V
0.008
0.006
VGS = 10V
0.9
0.7
0.5
0.004
0.002
0
--50
--25
0
25
50
75
100
125
150
0
20
40
60
80
100
ID -- Drain Current (A)
TJ -- Junction Temperature (°C)
Fig. 5 – On-Resistance vs.
Junction Temperature
1.6
VGS = 10V
ID = 38A
1.4
1.2
1
0.8
0.6
--50
--25
0
25
50
75
100
125
150
TJ -- Junction Temperature (°C)
GFB75N03
N-Channel Enhancement-Mode MOSFET
Ratings and
Characteristic Curves(TA = 25°C unless otherwise noted)
Fig. 6 – On-Resistance vs.
Gate-to-Source Voltage
Fig. 7 – Gate Charge
0.03
10
8
VDS = 15V
ID = 38A
ID = 38A
0.025
0.02
6
0.015
4
TJ = 125°C
0.01
2
0.005
0
25°C
0
2
4
6
8
10
0
10
20
30
40
50
60
70
Qg -- Gate Charge (nC)
VGS -- Gate-to-Source Voltage (V)
Fig. 9 – Source-Drain Diode
Forward Voltage
Fig. 8 – Capacitance
100
10
4000
3500
3000
VGS = 0V
f = 1MHZ
VGS = 0V
Ciss
2500
2000
TJ = 125°C
1
1500
1000
25°C
--55°C
0.1
Coss
500
0
Crss
0.01
0
0.2
0.4
0.6
0.8
1
1.2
1.4
30
0
5
10
15
20
25
VDS -- Drain-to-Source Voltage (V)
VSD -- Source-to-Drain Voltage (V)
GFB75N03
N-Channel Enhancement-Mode MOSFET
Ratings and
Characteristic Curves(TA = 25°C unless otherwise noted)
Fig. 10 – Breakdown Voltage vs.
Fig. 11 – Transient Thermal
Junction Temperature
Impedance
1
41
D = 0.5
ID = 250µA
40
0.2
39
38
37
P
DM
0.1
0.1
0.05
Single Pulse
t
1
t
2
1. Duty Cycle, D= t /t
1
2
2. R
3. R
(t)= R
*R
θJC
θJC
θJC(norm) θJC
36
35
= 1.8°C/W
4. T - T = P
* R
(t)
J
C
DM
θJC
0.01
150
--50
--25
0
25
50
75
100
125
0.0001 0.001
0.01
0.1
1
10
TJ -- Junction Temperature (°C)
Pulse Duration (sec.)
Fig. 12 – Power vs. Pulse Duration
Fig. 13 – Maximum Safe Operating Area
1000
1000
100
10
Single Pulse
RθJA = 1.8°C/W
800
TC = 25°C
600
400
R
DS(ON) Limit
100ms
VGS = 10V
Single Pulse
θJC = 1.8°C/W
TA = 25°C
200
DC
R
0
1
0.1
0.0001
0.001
0.01
0.1
1
10
1
10
100
Pulse Duration (sec.)
VDS -- Drain-Source Voltage (V)
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