GI506/58-E3 [VISHAY]

DIODE 3 A, 600 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode;
GI506/58-E3
型号: GI506/58-E3
厂家: VISHAY    VISHAY
描述:

DIODE 3 A, 600 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode

二极管
文件: 总4页 (文件大小:336K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
GI500 thru GI510  
Vishay General Semiconductor  
General Purpose Plastic Rectifier  
Major Ratings and Characteristics  
IF(AV)  
VRRM  
IFSM  
IR  
3.0 A  
200 V to 1000 V  
100 A  
5.0 µA  
VF  
1.1 V  
Tj max.  
150 °C  
DO-201AD  
Features  
Mechanical Data  
• Low forward voltage drop  
Case: DO-201AD, molded epoxy body  
• Low leakage current, I less than 0.1 µA  
Epoxy meets UL-94V-0 Flammability rating  
R
• High forward surge capability  
• Solder Dip 260 °C, 40 seconds  
Terminals: Matte tin plated (E3 Suffix) leads,  
solderable per J-STD-002B and JESD22-B102D  
Polarity: Color band denotes cathode end  
Typical Applications  
For use in general purpose rectification of power sup-  
plies, inverters, converters and freewheeling diodes  
application.  
(Note: These devices are not Q101 qualified. There-  
fore, the devices specified in this datasheet have not  
been designed for use in automotive or Hi-Rel appli-  
cations.)  
Maximum Ratings  
(TA = 25 °C unless otherwise noted)  
Parameter  
Symbols GI500 GI501 GI502 GI504 GI506 GI508 GI510  
Units  
V
Maximum repetitive peak reverse voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
3.0  
600  
420  
600  
800  
560  
800  
1000  
700  
Maximum RMS voltage  
V
V
A
Maximum DC blocking voltage  
100  
1000  
Maximum average forward rectified current 0.375"  
(9.5 mm) lead length at TA = 95 °C  
IF(AV)  
Peak forward surge current 8.3 ms single half sine-  
wave superimposed on rated load  
IFSM  
100  
A
Operating junction temperature range  
Storage temperature range  
TJ  
- 50 to + 150  
- 50 to + 150  
°C  
°C  
TSTG  
Document Number 88626  
25-Aug-05  
www.vishay.com  
1
GI500 thru GI510  
Vishay General Semiconductor  
Electrical Characteristics  
(TA = 25 °C unless otherwise noted)  
Parameter  
Test condition  
TJ= 25 °C  
Symbols GI500 GI501 GI502 GI504 GI506 GI508 GI510 Units  
Maximum instantaneous at 9.4 A  
forward voltage  
VF  
1.1  
1.0  
V
TJ= 175 °C  
Maximum DC reverse  
current at rated DC  
blocking voltage  
TA= 25 °C  
IR  
5.0  
50  
µA  
TA= 100 °C  
Typical reverse recovery at IF = 0.5 A, IR = 1.0 A,  
trr  
2.0  
28  
µs  
pF  
time  
Irr = 0.25 A  
Typical junction  
capacitance  
at 4.0 V, 1 MHz  
CJ  
Thermal Characteristics  
(TA = 25 °C unless otherwise noted)  
Parameter  
Symbols GI500 GI501 GI502 GI504 GI506 GI508 GI510 Units  
Typical thermal resistance (1)  
RθJA  
RθJL  
20  
5.0  
°C/W  
Notes:  
(1) Thermal resistance from junction to ambient and from junction to lead at 0.375" (9.5 mm) lead length, P.C.B. mounted  
with 0.8 x 0.8" (20 x 20 mm) copper heatsinks  
Ratings and Characteristics Curves  
(TA = 25 °C unless otherwise noted)  
200  
100  
8.0  
7.0  
6.0  
5.0  
4.0  
3.0  
2.0  
1.0  
0
L = 0.31" (7.9mm)  
TL = Both Leads to  
TJ = 150 °C  
8.3 ms Single Half Sine-Wave  
Heat Sink Mounted  
Lengths (L) as  
Shown  
L = 0.25"  
(6.3mm)  
Non-Repetitive  
60 Hz Resistive  
or Inductive  
Load  
L = 0.50"  
(12.7mm)  
Repetitive  
TA = Ambient Temperature  
0.375" (9.5mm) Lead Length  
P.C.B. Mounting  
10  
1
10  
100  
20  
40  
60  
80  
100  
120  
140  
160  
Number of Cycles at 60 Hz  
Temperature (°C)  
Figure 1. Forward Current Derating Curve  
Figure 2. Maximum Non-repetitive Peak Forward Surge Current  
www.vishay.com  
Document Number 88626  
25-Aug-05  
2
GI500 thru GI510  
Vishay General Semiconductor  
100  
10  
1
100  
TJ = 25°C  
f = 1.0MHz  
Vsig = 50mVp-p  
TJ = 25°C  
Pulse Width = 300 µs  
1% Duty Cycle  
10  
0.1  
1
0.1  
0.01  
1
10  
100  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
Instantaneous Forward Voltage (V)  
Reverse Voltage (V)  
Figure 3. Typical Instantaneous Forward Characteristics  
Figure 5. Typical Junction Capacitance  
100  
100  
10  
1
10  
TJ = 150 °C  
1
TJ = 100 °C  
0.1  
TJ = 25 °C  
0.01  
0.1  
0.01  
0
20  
40  
60  
80  
100  
0.1  
1
10  
100  
Percent of Rated Peak Reverse Voltage (%)  
t, Pulse Duration (sec.)  
Figure 4. Typical Reverse Characteristics  
Figure 6. Typical Transient Thermal Impedance  
Package outline dimensions in inches (millimeters)  
DO-201AD  
1.0 (25.4)  
Min.  
0.210 (5.3)  
0.190 (4.8)  
Dia.  
0.375 (9.5)  
0.285 (7.2)  
1.0 (25.4)  
Min.  
0.052 (1.32)  
0.048 (1.22)  
Dia.  
Document Number 88626  
25-Aug-05  
www.vishay.com  
3
Legal Disclaimer Notice  
Vishay  
Notice  
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,  
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.  
Information contained herein is intended to provide a product description only. No license, express or implied, by  
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's  
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express  
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness  
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.  
Customers using or selling these products for use in such applications do so at their own risk and agree to fully  
indemnify Vishay for any damages resulting from such improper use or sale.  
Document Number: 91000  
Revision: 08-Apr-05  
www.vishay.com  
1

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