GI858/1 [VISHAY]

Rectifier Diode, 1 Element, 3A, 800V V(RRM),;


型号：	GI858/1
厂家：	VISHAY
描述：	Rectifier Diode, 1 Element, 3A, 800V V(RRM), 二极管
文件：	总2页 (文件大小：21K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

GI850 thru GI858

Vishay Semiconductors

formerly General Semiconductor

Fast Switching Plastic Rectifier

Reverse Voltage 500 to 800 V

Forward Current 3.0 A

DO-201AD

Features

• Plastic package has Underwriters Laboratories

Flammability Classification 94V-0

1.0 (25.4)

MIN.

• High surge current capability

• Fast switching for high efficiency

• Construction utilizes void-free molded plastic technique

• High forward current operation

• High temperature soldering guaranteed:

250°C/10 seconds, 0.375" (9.5mm) lead length,

5 lbs. (2.3kg) tension

0.210 (5.3)

0.190 (4.8)

DIA.

0.375 (9.5)

0.285 (7.2)

Mechanical Data

Case: JEDEC DO-201AD, molded plastic body

Terminals: Plated axial leads, solderable per

MIL-STD-750, Method 2026

Polarity: Color band denotes cathode end

Mounting Position: Any

0.052 (1.32)

1.0 (25.4)

MIN.

0.048 (1.22)

DIA.

Weight: 0.04 oz., 1.1 g

Packaging codes/options:

1/Bulk - 1.5K per container, 15K per box

4/1.4K per 13" reel, 5.6K per box

23/1K per Ammo. mag., 9K per box

Dimensions in inches and (millimeters)

Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.

Parameter

Symbol

V_RRM

V_RMS

V_DC

GI850

GI851

100

GI852

200

140

200

250

GI854

400

280

400

450

GI856

600

420

600

650

GI858

800

560

800

880

Unit

Maximum repetitive peak reverse voltage

Maximum RMS voltage

Maximum DC blocking voltage

Maximum non-repetitive peak reverse voltage

100

150

V_RSM

Maximum average forward rectified current

0.375" (9.5mm) lead length at T_A=90°C

I_F(AV)

3.0

Peak forward surge current

8.3ms single half sine-wave superimposed on

rated load (JEDEC Method)

I_FSM

100

Typical thermal resistance ⁽¹⁾

R_ΘJA

R_ΘJL

8.0

°C/W

°C

Operating junction and storage temperature range

T_J, T_STG

-50 to +150

Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.

Maximum instantaneous forward voltage at 3.0A

1.25

1.10

V_F

I_R

t_rr

9.4A, T_J=175°C

Maximum DC reverse current

at rated DC blocking voltage

T_A=25°C

T_A=100°C

µA

150

200

250

300

500

Maximum reverse recovery time at

I_F=1.0A, V_R=30V, di/dt=50A/µs, I_rr=10% I_RM

200

Maximum reverse recovery time at

I_F=1.0A, V_R=30V, di/dt=50A/µs, I_rr=10% I_RM

I_RM(REC)

C_J

2.0

Typical junction capacitance at 4.0V, 1MHz

Notes: (1) Thermal resistance from junction to ambient and from junction to lead at 0.375” (9.5mm) lead length, with both leads equally heat sink

Document Number 88630

22-Mar-02

www.vishay.com

GI850 thru GI858

Vishay Semiconductors

formerly General Semiconductor

Ratings and

Characteristic Curves (T_A= 25°C unless otherwise noted)

Fig. 1 – Forward Current

Fig. 2 – Maximum Peak Forward

Surge Current

Derating Curves

200

100

8.0

L = Lead Length

8.3ms Single Half Sine-Wave

(JEDEC Method)

T_L= Lead Temperature

T_J= 25°C

6.0

Non-Repetitive

0.8 x 0.8 x 0.40"

(20 x 20 x 1mm)

Copper Heatsinks

L = 0.375" (9.5mm)

Lead Length

T_J= 150°C

4.0

T_J= 25°C

T_A= Ambient Temperature

0.375" (9.5mm) Lead Length

2.0

T_J= 150°C

Repetitive

110

130

150

170

100

Temperature (°C)

Number of Cycles at 60 H_Z

Fig. 3 – Typical Instantaneous

Forward Characteristics

Fig. 4 – Typical Reverse

Characteristics

100

T_J= 100°C

T_J= 25°C

Pulse Width = 300µs

1% Duty Cycle

T_J= 50°C

T_J= 25°C

0.1

0.01

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

100

Instantaneous Forward Voltage (V)

Percent of Rated Peak Reverse Voltage (%)

Fig. 5 – Typical Junction

Capacitance

100

T_J= 25°C

f = 1.0MH_Z

Vsig = 50mVp-p

100

Reverse Voltage (V)

www.vishay.com

Document Number 88630

22-Mar-02

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