GIB2401-E3/81 [VISHAY]

DIODE 16 A, 50 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode;


型号：	GIB2401-E3/81
厂家：	VISHAY
描述：	DIODE 16 A, 50 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode 功效测试二极管
文件：	总4页 (文件大小：89K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

GIB2401, GIB2402, GIB2403, GIB2404

www.vishay.com

Vishay General Semiconductor

Dual Common Cathode Ultrafast Plastic Rectifier

FEATURES

• Power pack

TO-263AB

• Glass passivated chip junction

• Ultrafast recovery time

• Low switching losses, high efficiency

• High forward surge capability

• Meets MSL level 1, per J-STD-020, LF maximum peak

of 245 °C

PIN 1

PIN 2

• AEC-Q101 qualified

HEATSINK

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

For use in high frequency rectifier of switching mode power

supplies, inverters, freewheeling diodes, DC/DC converters,

and other power switching application.

PRIMARY CHARACTERISTICS

I_F(AV)

16 A

V_RRM

I_FSM

50 V, 100 V, 150 V, 200 V

MECHANICAL DATA

Case: TO-263AB

125 A

35 ns

t_rr

Molding compound meets UL 94V-0 flammability rating

V_F

0.895 V

150 °C

Base P/N-E3

Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified

RoHS-compliant, commercial grade

T_Jmax.

Package

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD22-B102

E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix

TO-263AB

Diode variation

Common cathode

meets JESD 201 class 2 whisker test

Polarity: As marked

Mounting Torque: 10 in-lbs max.

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V_RRM

V_RMS

GIB2401

GIB2402

100

GIB2403

150

GIB2404

200

UNIT

Max. repetitive peak reverse voltage

Max. RMS voltage

105

140

Max. DC blocking voltage

V_DC

100

150

200

Max. average forward rectified current at T_C= 125 °C

I_F(AV)

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load per diode

I_FSM

125

Operating junction and storage temperature range

T_J, T_STG

- 65 to + 150

°C

ELECTRICAL CHARACTERISTICS (T_A= 25 °C unless otherwise noted)

PARAMETER

TEST CONDITIONS

SYMBOL GIB2401 GIB2402 GIB2403 GIB2404

UNIT

I_F= 4 A

I_F= 8 A

I_F= 4 A

I_F= 8 A

T_J= 25 °C

T_J= 100 °C

0.900

0.975

Max. instantaneous forward voltage

per diode

V_F

0.800

0.895

_C= 25 °C

T_C= 100 °C

I_F= 0.5 A, I_R= 1.0 A,

_rr= 0.25 A

4 V, 1 MHz

5.0

Max. DC reverse current per diode at

rated DC blocking voltage

I_R

μA

150

500

Max. reverse recovery time

t_rr

Typical junction capacitance per diode

C_J

Revision: 20-Aug-13

Document Number: 88633

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

GIB2401, GIB2402, GIB2403, GIB2404

www.vishay.com

Vishay General Semiconductor

THERMAL CHARACTERISTICS (T_C= 25 °C unless otherwise noted)

PARAMETER

SYMBOL GIB2401 GIB2402 GIB2403 GIB2404

UNIT

Typical thermal resistance per diode ⁽¹⁾

R_JC

1.2

°C/W

Note

(1)

Thermal resistance from junction to case per leg mounted on heatsink

ORDERING INFORMATION (Example)

PACKAGE

TO-263AB

PREFERRED P/N

UNIT WEIGHT (g)

PACKAGE CODE

BASE QUANTITY

50/tube

DELIVERY MODE

Tube

GIB2401-E3/45

1.35

GIB2401-E3/81

900/reel

Tape and reel

Tube

GIB2401HE3/45 ⁽¹⁾

GIB2401HE3/81 ⁽¹⁾

50/tube

900/reel

Tape and reel

Note

(1)

AEC-Q101 qualified



RATINGS AND CHARACTERISTICS CURVES 

(T_A= 25 °C unless otherwise noted)

100

Resistive or Inductive Load

T_J= 25 °C

T_J= 125 °C

Infinite Heatsink, T_C

Pulse Width = 300 µs

1 % Duty Cycle

0.1

Ambient Air Rating, T_A

0.01

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

100

125

150

Instantaneous Forward Voltage (V)

Case Temperature (°C)

Fig. 1 - Max. Forward Current Derating Curve

Fig. 3 - Typical Instantaneous Forward Characteristics

Per Diode

150

125

100

T_C= 125 °C

8.3 ms Single Half Sine-Wave

T_J= 125 °C

T_J= 100 °C

0.1

T_J= 25 °C

0.01

100

Number of Cycles at 60 Hz

Percent of Rated Peak Reverse Voltage (%)

Fig. 2 - Max. Non-Repetitive Peak Forward Surge Current

Per Diode

Fig. 4 - Typical Reverse Leakage Characteristics

Per Diode

Revision: 20-Aug-13

Document Number: 88633

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

GIB2401, GIB2402, GIB2403, GIB2404

www.vishay.com

Vishay General Semiconductor

1000

100

T_J= 25 °C

f = 1.0 MHz

V_sig= 50 mVp-p

0.1

100

Reverse Voltage (V)

Fig. 5 - Typical Junction Capacitance Per Diode



PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

TO-263AB

Mounting Pad Layout

0.411 (10.45)

0.380 (9.65)

0.245 (6.22)

MIN.

0.190 (4.83)

0.160 (4.06)

0.42 (10.66) MIN.

0.055 (1.40)

0.045 (1.14)

0.33 (8.38) MIN.

0.055 (1.40)

0.047 (1.19)

0.360 (9.14)

0.320 (8.13)

0.624 (15.85)

0.670 (17.02)

0.591 (15.00)

0 to 0.01 (0 to 0.254)

0.110 (2.79)

0.090 (2.29)

0.021 (0.53)

0.014 (0.36)

0.15 (3.81) MIN.

0.037 (0.940)

0.027 (0.686)

0.08 (2.032) MIN.

0.105 (2.67)

0.095 (2.41)

0.140 (3.56)

0.110 (2.79)

0.105 (2.67)

0.095 (2.41)

0.205 (5.20)

0.195 (4.95)

Revision: 20-Aug-13

Document Number: 88633

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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

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Revision: 08-Feb-17

Document Number: 91000

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