GP10KE/53 [VISHAY]

Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN;


型号：	GP10KE/53
厂家：	VISHAY
描述：	Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
文件：	总2页 (文件大小：26K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

GP10A thru GP10Y

Vishay Semiconductors

formerly General Semiconductor

Glass Passivated Junction Rectifiers

Reverse Voltage

50 to 1600V

Forward Current 1.0A

1.0 (25.4)

MIN.

DO-204AL (DO-41)

Features

0.107 (2.7)

0.080 (2.0)

DIA.

• Plastic package has Underwriters Laboratory

Flammability Classification 94V-0

• High temperature metallurgically bonded construction

• Cavity-free glass passivated junction

• Capable of meeting environmental standards of

MIL-S-19500

Dimensions in

inches and

(millimeters)

0.205 (5.2)

0.160 (4.1)

• 1.0 Ampere operation at T_A= 75°C and 55°C with no

thermal runaway

• Typical I_Rless than 0.1µA

• High temperature soldering guaranteed: 350°C/10 seconds,

0.375" (9.5mm) lead length, 5 lbs. (2.3kg) tension

1.0 (25.4)

MIN.

0.034 (0.86)

Mechanical Data

0.028 (0.71)

DIA.

Case: JEDEC DO-204AL, molded plastic over glass body

Terminals: Plated axial leads, solderable per

MIL-STD-750, Method 2026

0.026 (0.66)

0.023 (0.58)

NOTE: Lead diameter is

for suffix "E" part numbers

Polarity: Color band denotes cathode end

Mounting Position: Any

Weight: 0.012 oz., 0.3 g

*Glass-plastic encapsulation technique is covered by

Patent No. 3,996,602, and brazed-lead assembly by Patent No. 3,930,306

Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.

Parameter

Symbol

V W Y Unit

Maximum repetitive peak reverse voltage

V_RRM

50 to 1600V (See Fig. 5)

Maximum average forward rectified current

0.375" (9.5mm) lead length (See fig. 1)

I_F(AV)

I_FSM

1.0

Peak forward surge current 8.3ms single half sine-wave

superimposed on rated load (JEDEC Method)

Maximum full load reverse current, full cycle

average, 0.375" (9.5mm) lead lengths at T_A= 75°C

I_R(AV)

µA

Typical thermal resistance (Note 1)

R_θJA

°C/W

°C

Operating junction and storage temperature range

T_J, T_STG

–65 to +175

–65 to +150

Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.

Parameter

Symbol

V W Y Unit

Maximum instantaneous forward voltage at 1.0A

V_F

1.1

1.2

1.3

Maximum DC reverse current

at rated DC blocking voltage

T_A= 25°C

T_A= 125°C

5.0

I_R

µA

Typical reverse recovery time at

I_F= 0.5A, I_R= 1.0A, I_rr= 0.25A

t_rr

3.0

7.0

µs

Typical junction capacitance at 4.0V, 1MHz

C_J

8.0

5.0

Note: (1) Thermal resistance from junction to ambient at 0.375” (9.5mm) lead length, P.C.B. mounted

Document Number 88637

5-Mar-02

www.vishay.com

GP10A thru GP10Y

Vishay Semiconductors

formerly General Semiconductor

Ratings and

Characteristic Curves (T_A= 25°C unless otherwise noted)

www.vishay.com

Document Number 88637

5-Mar-02

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